1. A spin transistor, comprising:
a non-magnetic semiconductor substrate having a channel region, a first area, and a second area, the channel region being between the first area and the second area;
a first conductive layer located above the first area and made of a ferromagnetic material magnetized in a first direction;
a second conductive layer located above the second area and made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, the channel region introducing electron spin between the first conductive layer and the second conductive layer;
a gate electrode located between the first conductive layer and the second conductive layer and above the channel region; and
a tunnel barrier film located between the non-magnetic semiconductor substrate and at least one of the first conductive layer and the second conductive layer.
2. The spin transistor according to claim 1, wherein such voltage as to adjust the energy level of the channel region is applied to the gate electrode.
3. The spin transistor according to claim 1, further comprising an antiferromagnetic layer that is in contact with the first conductive layer.
4. The spin transistor according to claim 1, further comprising an insulating film that is located between the gate electrode and at least one of the first conductive layer and the second conductive layer.
5. The spin transistor according to claim 1, further comprising:
a first multi-layer film that is located on the second conductive layer; and
a second multi-layer film that is located on the second conductive layer and is located at a distance from the first multi-layer film,
wherein the first multi-layer film includes a first non-magnetic layer that is located on the second conductive layer, and a first magnetic layer that is located on the first non-magnetic layer and is magnetized in a third direction,
the second multi-layer film includes a second non-magnetic layer that is located on the second conductive layer, and a second magnetic layer that is located on the second non-magnetic layer and is magnetized in a fourth direction,
a magnetizing direction of the second conductive layer being controlled with the direction of current flowing between the first multi-layer film and the second multi-layer film via the second conductive layer.
6. The spin transistor according to claim 5, wherein
the third direction is the same as the first direction or the second direction, and
the third direction and the fourth direction are opposite to each other.
7. The spin transistor according to claim 6, wherein the first multi-layer film has a third non-magnetic layer that is located on the first magnetic layer, and a third magnetic layer that is located on the third non-magnetic layer and is magnetized in a fifth direction that is antiparallel with respect to the third direction.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing a carbon nanotube-containing conductor that has a conductive layer on the surface of an objective substrate, comprising the steps of:
pressing a carbon nanotube network layer, via a release substrate having the carbon nanotube network layer thereon, against a transparent objective substrate coated with an electron beam-curable liquid resin composition to infiltrate the liquid resin composition into the carbon nanotube network layer;
irradiating it with electron beams to cure the liquid resin composition; and
peeling off the release substrate to obtain a conductor comprising the objective substrate having a resin composition layer with carbon nanotubes embedded in the surface thereof.
2. The method for producing a carbon nanotube-containing conductor according to claim 1, wherein the release substrate having the carbon nanotube network layer is obtained by applying a dispersion that contains carbon nanotubes and a dispersion medium and optionally a dispersant, onto the surface of a release substrate and drying it thereon, to form a continuous three-dimensional network layer of carbon nanotubes on the surface thereof.
3. The method for producing a carbon nanotube-containing conductor according to claim 1 or 2, wherein the release substrate having the carbon nanotube network layer is obtained by applying a dispersion that contains carbon nanotubes and a dispersion medium and optionally a dispersant, onto the surface of a release substrate and drying it thereon, and then removing the remaining dispersant and other additives by washing with hot water or with the dispersion medium used in the dispersion of carbon nanotubes, to form a continuous three-dimensional network layer of carbon nanotubes on the surface thereof.
4. The method for producing a carbon nanotube-containing conductor according to claim 1 or 2, wherein the release substrate having the carbon nanotube network layer is obtained by applying a dispersion that contains carbon nanotubes and a dispersion medium and optionally a dispersant, onto the surface of a release substrate that is made of heat-resistant material and drying it thereon, and then removing the remaining dispersant and other additives through thermal decomposition at a temperature of from 400 to 600\xb0 C., to form a continuous three-dimensional network layer of carbon nanotubes on the surface thereof.
5. The method for producing a carbon nanotube-containing conductor according to any one of claims 1 to 4, wherein the dispersion medium for carbon nanotubes is a polar solvent.
6. The method for producing a carbon nanotube-containing conductor according to any one of claims 1 to 5, wherein the objective substrate with carbon nanotubes embedded in the surface of the electron beam-curable resin is washed with water and is further subjected to heating and drying treatment.
7. The method for producing a carbon nanotube-containing conductor according to any one of claims 1 to 6, wherein the objective substrate with carbon nanotubes embedded in the surface of the electron beam-curable resin is subjected to impregnation treatment with a dopant, and then washed with water followed by heating and drying treatment.
8. The method for producing a carbon nanotube-containing conductor according to any one of claims 1 to 7, wherein the electron beam-curable resin composition is a UV-curable resin composition.
9. The method for producing a carbon nanotube-containing conductor according to claim 8, wherein the UV-curable resin composition contains a resin having at least two acryloyl groups and a photopolymerization initiator.
10. The method for producing a carbon nanotube-containing conductor according to claim 9, wherein the resin having at least two acryloyl groups is a synthetic resin selected from urethane acrylates having at least two acryloyl groups.
11. The method for producing a carbon nanotube-containing conductor according to any one of claims 2 to 10, wherein the dispersion containing carbon nanotubes is an aqueous dispersion.
12. The method for producing a carbon nanotube-containing conductor according to any one of claims 7 to 11, wherein the impregnation treatment with a dopant is immersion in an aqueous solution of an inorganic acid andor an organic acid or its salt.