What is claimed is:
1. A microactuator comprising:
a first substrate;
a second substrate, the first substrate and the second substrate facing each other with a distance and movable with respect to each other;
a first comb electrode having a plurality of first comb elements formed on an inner surface of the first substrate;
a second comb electrode having a plurality of second comb elements formed on an inner surface of the second substrate, the first comb elements and the second comb elements being alternately disposed; and
a connecting film formed by partially removing an interlayer formed on the inner face of any one of the first substrate and the second substrate, any one of the first electrode and the second electrode being bonded to the connecting film.
2. A microactuator according to claim 1, wherein the first electrode and the second electrode comprise silicon and the interlayer comprises a material which is selectively etched with respect to the silicon.
3. A microactuator according to claim 1, wherein the first electrode, the second electrode, and the substrate provided with the connecting film comprise silicon and the interlayer comprises at least one of a silicon oxide film and a silicon-boron-oxygen insulating film.
4. A microactuator according to claim 1, wherein the first electrode and the second electrode comprise silicon, the substrate provided with the connecting film comprises any one of glass and ceramic, and the interlayer comprises a polyimide.
5. A method for making a microactuator comprising providing a first substrate and a second substrate facing each other with a distance and movable with respect to each other, and providing a first comb electrode having a plurality of first comb elements formed on an inner surface of the first substrate and a second comb electrode having a plurality of second comb elements formed on an inner surface of the second substrate;
wherein a wafer comprising two substrate layers and an interlayer provided therebetween is used as any one of the first substrate and the second substrate and one of the two substrate layers is etched using a mask having a predetermined pattern to form a first electrode precursor group and a second electrode precursor group for the first electrodes and the second electrodes, respectively, the interlayer below any one of the first and second electrode precursor groups is removed by etching to form any unconnected one of the first and second electrodes and to form the other one of the first and second electrodes supported by connecting films formed by etching of the remaining interlayer, and said unconnected one is bonded to the other one of the first substrate and the second substrate.
6. A method for making a microactuator according to claim 5, wherein one of the two substrate layers comprises silicon and the interlayer comprises a material which is selectively etched with respect to the silicon.
7. A method for making a microactuator according to claim 5, wherein both the substrate layers comprise silicon and the interlayer comprises at least one of a silicon oxide film and a silicon-boron-oxygen insulating film.
8. A method for making a microactuator according to claim 5, wherein one of the two substrate layers comprises silicon, the other of the two substrate layers comprises one of glass and ceramic, and the interlayer comprises a polyimide.
9. A magnetic head unit comprising a microactuator according to any one of claims 1 to 4.
10. A magnetic recording apparatus comprising a magnetic head unit according to claim 9.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process-gas supply system configured to supply a process gas diluted with a diluent gas to a gas using system, the process-gas supply system comprising:
a process gas tank configured to store the process gas;
a diluent gas tank configured to store the diluent gas;
a main gas duct connecting the process gas tank and the gas using system;
a plurality of flow rate controllers disposed on the main gas duct;
a diluent gas duct connecting the diluent gas tank to the main gas duct, the diluent gas duct being connected to the main gas duct at a position on an immediately downstream side of one of the flow rate controllers disposed on the main gas duct other than the flow rate controller on the most downstream side;
a flow rate controller disposed on the diluent gas duct; and
a surplus-gas discharge duct through which a surplus diluted process gas is discharged from the main gas duct, the surplus-gas discharge duct being connected to the main gas duct at a position on an immediately upstream side of one of the flow rate controllers disposed on the main gas duct other than the flow rate controller on the most upstream side.
2. The process-gas supply system according to claim 1, wherein
a pure process gas or a process gas diluted with a diluent gas to a predetermined density is accommodated in the process gas tank.
3. The process-gas supply system according to claim 1, further comprising a reusable gas duct connecting the surplus-gas discharge duct and the diluent gas duct,
wherein the reusable gas duct is configured such that all the discharged surplus gas or a part thereof in the surplus-gas discharge duct can be reused as the diluent gas.
4. The process-gas supply system according to claim 3, wherein
the reusable gas duct is provided with a process-gas removal filter configured to absorb the process gas from the diluted process gas containing the diluent gas and the process gas, and
the process-gas removal filter is configured to remove the process gas from the diluted process gas flowing through the reusable gas duct, and to allow the diluent gas to pass therethrough.
5. The process-gas supply system according to claim 1, further comprising a reusable gas duct connecting the surplus-gas discharge duct and an exhaust system disposed on the gas using system,
wherein the reusable gas duct is configured such that all the discharged surplus gas or a part thereof in the surplus-gas discharged duct can be reused as a purge gas for a vacuum pump of the exhaust system.
6. The process-gas supply system according to claim 5, wherein
the reusable gas duct is provided with a process-gas removal filter configured to absorb the process gas from the diluted process gas containing the diluent gas and the process gas, and
the process-gas removal filter is configured to remove the process gas from the diluted process gas flowing through the reusable gas duct, and to allow the diluent gas to pass therethrough.
7. The process-gas supply system according to claim 1, further comprising:
a density measuring instrument configured to measure a density of the process gas, the density measuring instrument being disposed on the main gas duct at a position immediately before the gas using system, or on the gas using system; and
a feedback control device configured to feedback-control a flow rate controller based on a value detected by the density measuring instrument.
8. The process-gas supply system according to claim 7, wherein
the flow rate controller to be feedback-controlled by the feedback control device is the flow rate controller disposed on the main gas duct.
9. The process-gas supply system according to claim 7, wherein
the flow rate controller to be feedback-controlled by the feedback control device is the flow rate controller disposed on the diluent gas duct.
10. The process-gas supply system according to claim 1, further comprising a discarded-gas discharge duct connected to the main gas duct at a position on the downstream side of the flow rate controller on the most downstream side,
wherein the discarded-gas discharge duct is configured such that the process gas flowing therethrough bypasses the gas using system and is discarded.
11. The process-gas supply system according to claim 1, wherein
the surplus-gas discharge duct is provided with a check valve that is opened when a pressure of the process gas reaches or exceeds a predetermined pressure.
12. The process-gas supply system according to claim 11, wherein
the surplus-gas discharge duct is provided with a needle valve at a position on the upstream side of the check valve.
13. The process-gas supply system according to claim 1, further comprising:
a pressure gauge disposed on the main gas duct, the pressure gauge being configured to measure a gas pressure in the main gas duct;
a pressure regulating valve disposed on the surplus-gas discharge duct; and
a valve control device configured to control a valve opening degree of the pressure regulating valve based on a value measured by the pressure gauge.
14. The process-gas supply system according to claim 1, wherein
a part of the main gas duct, which part is located between a connection position to which the surplus-gas discharge duct is connected and a connection position to which the diluent gas duct is connected on the downstream side of the former connection point to which the surplus-gas discharge duct is connected, has a cross section smaller than those of other parts of the main gas duct, the other parts being located adjacent to the part on the upstream side and the downstream side.
15. The process-gas supply system according to claim 1, further comprising:
a zirconia-type density measuring instrument disposed on the main gas duct, the zirconia-type measuring instrument being configured to measure an oxygen density of a gas in the main gas duct; and
a feedback control part configured to feedback-control a flow rate controller based on a value detected by the zirconia-type density measuring instrument.
16. The process-gas supply system according to claim 15, further comprising a measuring-instrument bypass pipe provided with an opening and closing valve, the measuring-instrument bypass pipe being disposed on the main gas duct,
wherein the measuring-instrument bypass pipe is configured such that the process gas flowing therethrough bypasses the zirconia-type measuring instrument.
17. The process-gas supply system according to claim 1, wherein
the gas using system is a film deposition apparatus configured to deposit a film on a surface of an object to be processed, or an annealing apparatus configured to anneal an object to be processed on which a film has been formed.
18. The process-gas supply system according to claim 17, wherein
the film is any one of a CuMn film, a high dielectric constant film, an Mn film, and a film containing Mn.
19. The process-gas supply system according to claim 1, further comprising a mixer disposed on the main gas duct at a position to which the diluent gas duct is connected.
20. The process-gas supply system according to claim 1, wherein
the diluent gas is formed of one or more gases selected from the group consisting of an N2 gas and a rare gas.
21. The process-gas supply system according to claim 1, wherein
the process gas is an O2 gas.
22. A process-gas supply system configured to supply a process gas diluted with a diluent gas to a gas using system, the process-gas supply system comprising:
a liquid material tank configured to store a liquid material of the process gas;
a diluent gas tank configured to store the diluent gas;
a main gas duct connecting the liquid material tank and the gas using system;
a flow rate controller disposed on the main gas duct; and
a diluent gas duct connecting the diluent gas tank to the main gas duct, the diluent gas duct being connected to the main gas duct at a position on a downstream side of the flow rate controller disposed on the main gas duct.
23. The process-gas supply system according to claim 22, wherein
the liquid material tank is configured such that a process gas, which is generated by evaporating the liquid material in the liquid material tank, outflows to the main gas duct.
24. The process-gas supply system according to claim 22, further comprising:
a plurality of flow rate controllers disposed on the main gas duct; and
a surplus-gas discharge duct through which a surplus diluted process gas is discharged from the main gas duct, the surplus-gas discharge duct being connected to the main gas duct at a position on an immediately upstream side of one of the flow rate controllers disposed on the main gas duct other than the flow rate controller on the most upstream side,
wherein the diluent gas duct is connected to the main gas duct at a position on an immediately downstream side of one of the flow rate controllers disposed on the main gas duct other than the flow rate controller on the most downstream side.
25. The process-gas supply system according to claim 22, further comprising a pressure regulating valve mechanism disposed on the main gas duct at a position on the immediately
a surplus-gas discharge duct through which a surplus diluted process gas is discharged from the main gas duct, the surplus-gas discharge duct being connected to the main gas duct at a position on an immediately upstream side of one of the flow rate controllers disposed on the main gas duct other than the flow rate controller on the most upstream side;
wherein the diluent gas duct is connected to the main gas duct at a position on an immediately downstream side of one of the flow rate controllers disposed on the main gas duct other than the flow rate controller on the most downstream side.
30. The process-gas supply system according to claim 27, further comprising a pressure regulating valve mechanism disposed on the main gas duct at a position on an immediately downstream side of the liquid material tank.
31. The process-gas supply system according to claim 27, wherein
the process gas is a steam.
32. A process-gas supply system configured to supply a process gas diluted with a diluent gas to a gas using system, the process-gas supply system comprising:
a process-gas forming part configured to form the process gas;
a diluent gas tank configured to store the diluent gas;
a main gas duct connecting the process-gas forming part and the gas using system;
a flow rate controller disposed on the main gas duct;
a diluent gas duct connecting the diluent gas tank to the main gas duct, the diluent gas duct being connected to the main gas duct at a position on an upstream side of the flow rate controller disposed on the main gas duct;
a flow rate controller disposed on the diluent gas duct; and
a surplus-gas discharge duct through which a surplus diluted process gas is discharged from the main gas duct, the surplus-gas discharge duct being connected to the main gas duct at a position on the immediately upstream side of the flow rate controller disposed on the main gas duct.
33. The process-gas supply system according to claim 32, wherein
the process-gas forming part includes:
a material-gas supply system configured to supply a plurality of material gases for forming the process gas, with flow rates of the material gases being independently controlled; and
a reaction part configured to react the plurality of material gases from the material-gas supply system so as to form the process gas.
34. The process-gas supply system according to claim 32, wherein
the plurality of material gases are an H2 gas and an O2 gas, and the process gas is a steam.
35. The process-gas supply system according to claim 32, further comprising:
a density measuring instrument configured to measure a density of the process gas, the density measuring instrument being disposed on the main gas duct at a position immediately before the gas using system, or on the gas using system; and
a feedback control device configured to feedback-control a flow rate controller based on a value detected by the density measuring instrument.
36. The process-gas supply system according to claim 35, wherein
the flow rate controller to be feedback-controlled by the feedback control device is the flow rate controller disposed on the main gas duct, or a flow rate controller disposed on the process-gas forming part.
37. The process-gas supply system according to claim 35, wherein
the flow rate controller to be feedback-controlled by the feedback control device is the flow rate controller disposed on the diluent gas duct.
38. A processing system configured to subject an object to be processed to a predetermined process, the processing apparatus comprising:
a processing container capable of accommodating one or more objects to be processed;
a gas introduction member configured to introduce a gas into the processing container; and
the process-gas supply system according to claim 1, connected to the gas introduction member for supplying a process gas diluted with a diluent gas into the processing container.
39. The processing system according to claim 38, further comprising an exhaust system configured to discharge an atmosphere in the processing container,
wherein the exhaust system includes: a main exhaust duct provided with an opening and closing valve and a vacuum pump; and a bypass exhaust duct provided with an opening and closing valve, for atmospheric pressure process, the bypass exhaust duct being connected to the main exhaust duct such that the bypass exhaust duct bypasses the vacuum pump.