1. A seed of the hybrid corn variety CH848055, produced by crossing a first plant of variety CV252827 with a second plant of variety CV596742, wherein representative seed of said varieties CV252827 and CV596742 have been deposited under ATCC Accession numbers PTA-10192 and PTA-______, respectively.
2. A plant of the hybrid corn variety CH848055 grown from the seed of claim 1.
3. A plant part of the plant of claim 2.
4. The plant part of claim 3, further defined as an ear, ovule, pollen or cell.
5. A tissue culture of cells of the plant of claim 2.
6. The tissue culture of claim 5, wherein cells of the tissue culture are from a tissue selected from the group consisting of leaf, pollen, embryo, root, root tip, anther, silk, flower, kernel, ear, cob, husk, stalk and meristem.
7. The seed of claim 1, further comprising a transgene.
8. The seed of claim 7, wherein the transgene confers a trait selected from the group consisting of male sterility, herbicide tolerance, insect resistance, disease resistance, waxy starch, modified fatty acid metabolism, modified phytic acid metabolism, modified carbohydrate metabolism and modified protein metabolism.
9. The plant of claim 2, further comprising a transgene.
10. A method of producing hybrid corn seed comprising crossing a plant of variety CV252827 with a plant of variety CV596742, wherein representative seed of variety CV252827 and variety CV596742 have been deposited under ATCC Accession numbers PTA-10192 and PTA-______, respectively.
11. The method of claim 10, wherein the plant of inbred variety CV252827 is pollinated with pollen from a plant of variety CV596742.
12. The method of claim 10, wherein the plant of inbred variety CV596742 is pollinated with pollen from a plant of variety CV252827.
13. A method of introducing a heritable trait into hybrid corn variety CH848055 comprising the steps of:
(a) introducing at least a first heritable trait into at least one inbred corn variety selected from the group consisting of variety CV252827 and variety CV596742 to produce a plant of the first inbred corn variety that heritably carries the trait, wherein the heritable trait is introduced into said first inbred corn variety by backcrossing and wherein representative samples of seed of variety CV252827 and variety CV596742 have been deposited under ATCC Accession numbers PTA-10192 and PTA-______, respectively; and
(b) crossing a plant of the first inbred corn variety that heritably carries the trait with a plant of a different variety selected from said group consisting of CV252827 and CV596742 to produce a plant of hybrid corn variety CH848055 comprising the heritable trait.
14. The method of claim 13, wherein the trait is selected from the group consisting of male sterility, herbicide tolerance, insect resistance, disease resistance, waxy starch, modified fatty acid metabolism, modified phytic acid metabolism, modified carbohydrate metabolism and modified protein metabolism.
15. The method of claim 14, further comprising repeating step (a) at least once to introduce at least a second heritable trait into hybrid corn variety CH848055, wherein the second heritable trait is selected from the group consisting of male sterility, herbicide tolerance, insect resistance, disease resistance, waxy starch, modified fatty acid metabolism, modified phytic acid metabolism, modified carbohydrate metabolism and modified protein metabolism.
16. A plant produced by the method of claim 13.
17. A seed that produces the plant of claim 16.
18. A method of introducing a trait into hybrid corn variety CH848055 comprising the steps of:
(a) introducing a transgene conferring the trait into a variety selected from the group consisting of CV252827 and CV596742 to produce a transgenic plant heritably carrying the trait, wherein representative samples of seed of variety CV252827 and variety CV596742 have been deposited under ATCC Accession numbers PTA-10192 and PTA-______, respectively; and
(b) crossing the transgenic plant or an isogenic progeny plant thereof with a plant of a different variety selected from the group consisting of CV252827 and CV596742 to produce a plant of the hybrid corn variety CH848055 that comprises the trait.
19. The method of claim 18, wherein the desired trait is selected from the group consisting of male sterility, herbicide tolerance, insect resistance, disease resistance, waxy starch, modified fatty acid metabolism, modified phytic acid metabolism, modified carbohydrate metabolism and modified protein metabolism.
20. The method of claim 18, further comprising repeating step (a) at least once to introduce at least a second trait into hybrid corn variety CH848055, wherein the second trait is selected from the group consisting of male sterility, herbicide tolerance, insect resistance, disease resistance, waxy starch, modified fatty acid metabolism, modified phytic acid metabolism, modified carbohydrate metabolism and modified protein metabolism.
21. A plant produced by the method of claim 18.
22. The plant of claim 21, wherein the plant comprises a trait selected from the group consisting of male sterility, herbicide tolerance, insect resistance, disease resistance, waxy starch, modified fatty acid metabolism, modified phytic acid metabolism, modified carbohydrate metabolism and modified protein metabolism.
23. A method of producing a corn plant derived from the hybrid corn variety CH848055, comprising crossing the plant of claim 2 with a second corn plant to produce a progeny corn plant derived from the hybrid corn variety CH848055.
24. The method of claim 23, further comprising the steps of:
(a) crossing the progeny corn plant derived from the hybrid corn variety CH848055 with itself or a second plant to produce a seed of a progeny plant of a subsequent generation;
(b) growing a progeny plant of a subsequent generation from the seed and crossing the progeny plant of a subsequent generation with itself or a second plant; and
(c) repeating steps (a) and (b) for an additional 3-10 generations to produce a corn plant further derived from the hybrid corn variety CH848055.
25. The method of claim 24, further comprising the step of:
(d) crossing the corn plant further derived from the hybrid corn variety CH848055 with a second, distinct corn plant.
26. A method of producing a commodity plant product comprising obtaining the plant of claim 2 or a part thereof and producing said commodity plant product therefrom.
27. The method of claim 26, wherein the commodity plant product is grain, starch, seed oil, corn syrup or protein.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1.-20. (canceled)
21. A semiconductor element, comprising:
a semi-insulating substrate having a first first-conductivity-type layer selectively on a surface of the semi-insulating substrate;
a first semiconductor layer provided on the semi-insulating substrate and the first first-conductivity-type layer, the first semiconductor layer containing AlxGa1-xN (0\u2266X<1);
a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer containing AlYGa1-YN (0<Y\u22661 and X<Y)), and conductivity-type of AlYGa1-yN (0<Y\u22661 and X<Y)) not being first-conductivity-type;
a first major electrode connected to the second semiconductor layer;
a second major electrode connected to the second semiconductor layer; and
a control electrode provided on the second semiconductor layer between the first major electrode and the second major electrode, wherein
the first first-conductivity-type layer is provided under the control electrode.
22. The element according to claim 21, wherein a first edge of the first first-conductivity-type layer on a side of the second major electrode is positioned between the control electrode and the second major electrode, when viewed in a direction perpendicular to a major surface of the semi-insulating substrate.
23. The element according to claim 21, further comprising:
a first insulating film provided on the second semiconductor layer except the control electrode, the first major electrode, and the second major electrode; and
a first field plate electrode provided on the first insulating film, wherein
the first field plate electrode is connected to the control electrode, and
a first edge of the first first-conductivity-type layer on the side of the second major electrode is positioned between the first field plate electrode and the second major electrode, when viewed in a direction perpendicular to a major surface of the semi-insulating substrate.
24. The element according to claim 21, further comprising:
a first insulating film provided on the second semiconductor layer except the control electrode, the first major electrode, and the second major electrode; and
a first field plate electrode provided on the first insulating film,
a second insulating film covering the first field plate electrode; and
a second field plate electrode provided on the second insulating film, wherein
the first field plate electrode is connected to the control electrode,
the second field plate electrode is connected to the first major electrode, and a first edge of the first first-conductivity-type layer on the side of the second major electrode is positioned between the second field plate electrode and the second major electrode, when viewed in a direction perpendicular to a major surface of the semi-insulating substrate.
25. The element according to claim 21, wherein at least one of convex parts directed from a side of the second major electrode to a side of the first major electrode is provided at an edge part of the first first-conductivity-type layer on the side of the second major electrode, when viewed in a direction perpendicular to a major surface of the semi-insulating substrate.
26. The element according to claim 21, further comprising a gate insulating film provided between the second semiconductor layer and the control electrode.
27. The element according to claim 21, wherein the semi-insulating substrate is made of silicon.
28. The element according to claim 27, wherein
another first first-conductivity-type layer is provided on the surface of the semi-insulating substrate other than the first first-conductivity-type layer, and
at least one of second first-conductivity-type layers is provided selectively on the surface of the semi-insulating substrate in a part sandwiched by the first first-conductivity-type layer and the another first first-conductivity-type layer.
29. The element according to claim 28, wherein an impurity concentration in the second first-conductivity-type layer is lower than an impurity concentration in the first first-conductivity-type layer.
30. The element according to claim 27, wherein
a second-conductivity-type layer is provided on a second major surface opposite to a first major surface of the semi-insulating substrate, the first first-conductivity-type layer is provided on the first major surface of the semi-insulating substrate, and
the second-conductivity-type layer is electrically connected to the second major electrode.
31. The element according to claim 28, wherein at least one of third first-conductivity-type layers is provided selectively on the surface of the semi-insulating substrate except a region, and the first first-conductivity-type layer or the second first-conductivity-type layers is provided in the region.
32. The element according to claim 31, wherein the second semiconductor layer is not provided on the at least one of third first-conductivity-type layers.
33. The element according to claim 31, wherein a device separation layer is provided on the first semiconductor layer on the at least one of third first-conductivity-type layers.