1. A method for operating a PWM output of a driver for a power semiconductor, the PWM output including a PWM signal and a binary supplementary value under predetermined operating conditions, the method comprising:
converting an analog value to be output by the driver into a PWM signal which has a first (Hi) and a second (Lo) signal level and which is at a known PWM frequency, and
for a first value of the binary supplementary value, outputting the PWM signal at the PWM output,
for a second value of the binary supplementary value, outputting the PWM signal at the PWM output together with a supplementary signal;
wherein the first (Hi) or second (Lo) signal level determined on the basis of the PWM signal and the respective other signal level (Lo, Hi) are output in alternating sequence as said supplementary signal at a signal frequency greater than said known PWM frequency.
2. The method of claim 1, wherein the output PWM signal is converted back into said analog value on a receiver by a predetermined evaluation method, in which the signal levels (Hi, Lo) in the supplementary signal are chosen within a PWM clock cycle on the basis of the evaluation method such that said analog value is retained as the result of the evaluation method.
3. The method of claim 2, wherein each PWM clock cycle has both signal levels (Hi, Lo), in which the supplementary signal is output exclusively only when the PWM signal adopts one of said first (Hi) and said second (Lo) signal levels.
4. The method of claim 2, in which the supplementary signal is chosen such that within a single PWM clock cycle, the signal components removed by the supplementary signal at said first signal level (Hi) of the PWM signal are restored using the signal components added by the supplementary signal at said second signal level (Lo) of the PWM signal to thereby restore said supplementary signal.
5. The method according to claim 1, in which the signal frequency of the supplementary signal is altered on the basis of a supplementary information item.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a semiconductor device comprising:
(a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber;
(b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and
(c) supplying a microwave to the substrate after processing the substrate with the process gas.
2. The method of claim 1, wherein the evaporator is installed in the process chamber and the process gas is generated within the process chamber.
3. The method of claim 1, wherein the process liquid is dripped onto the evaporator to generate the process gas.
4. The method of claim 2, wherein the process liquid is dripped onto the evaporator to generate the process gas.
5. The method of claim 1, further comprising prebaking the film containing the silazane bond to cure the film before performing the step (b).
6. The method of claim 1, further comprising supplying the microwave to the substrate when the step (b) is performed.
7. The method of claim 1, wherein the step (c) is performed while varying a frequency of the microwave.
8. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate having thereon a film containing a silazane bond;
an evaporation device comprising an evaporator configured to receive a process liquid containing hydrogen peroxide;
a microwave supply unit configured to supply a microwave to the substrate; and
a control unit configured to control the evaporation device and the microwave supply unit to generate a process gas from the process liquid supplied to the evaporator and supply the microwave to the substrate after the process gas is supplied to the substrate.
9. The substrate processing apparatus of claim 8, wherein the evaporator is installed in the process chamber.
10. The substrate processing apparatus of claim 8, wherein the process liquid is dripped onto the evaporator to generate the process gas.
11. The substrate processing apparatus of claim 8, wherein the control unit is further configured to control the microwave supply unit to supply the microwave to the substrate while varying a frequency of the microwave.
12. The substrate processing apparatus of claim 8, wherein the microwave supply unit is configured to supply the microwave in direction parallel to the substrate.
13. A non-transitory computer-readable recording medium storing a program for causing a computer to control a substrate processing apparatus to perform:
(a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber;
(b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and
(c) supplying a microwave to the substrate after processing the substrate with the process gas.
14. The non-transitory computer-readable recording medium of claim 13, wherein the evaporator is installed in the process chamber, and the process gas is generated within the process chamber.
15. The non-transitory computer-readable recording medium of claim 13, further comprising prebaking the film containing the silazane bond to cure the film before performing the sequence (b).
16. The non-transitory computer-readable recording medium of claim 13, further comprising supplying the microwave to the substrate when the sequence (b) is performed.
17. The non-transitory computer-readable recording medium of claim 13, wherein the sequence (c) is performed while varying a frequency of the microwave.