1. A method of detecting a nonuniformity in a material, component, or structure, the method comprising inducing changes in strain state in a material, component, or structure and measuring magnetic flux leakage that is synchronous with the changes in strain state.
2. A method of detecting a nonuniformity in a material, component, or structure, the method comprising changing the magnetic moment of a material, component, or structure through the Villari effect and measuring magnetic flux leakage that is synchronous with changes in the magnetic moment.
3. The method of claim 1 further comprising:
applying periodic mechanical force to a material, component, or structure in a manner sufficient to induce changes in strain state in the material, component, or structure.
4. The method of claim 1 further comprising:
exciting a material, component, or structure with periodic waves of ultrasonic energy in a manner sufficient to induce cycles of compression and tension in the material, component, or structure; and
measuring magnetic flux leakage that is synchronous with the cycles of compression and tension.
5. The method of claim 1 further comprising:
applying an external magnetic field to a material, component, or structure;
inducing periodic changes in strain state in the material, component, or structure.
6. The method of claim 1 further comprising:
applying an external magnetic field to a material, component, or structure;
applying periodic mechanical force to the material, component, or structure in a manner sufficient to induce changes in strain state in the material.
7. The method of claim 1 further comprising:
applying an external magnetic field to a material, component, or structure;
exciting the material, component, or structure with periodic waves of ultrasonic energy in a manner sufficient to induce cycles of compression and tension in the material, component, or structure; and
measuring magnetic flux leakage that is synchronous with the cycles of compression and tension.
8. The method of claim 1 further comprising:
applying an external magnetic field to a material, component, or structure;
inducing a cycle of tension and compression in the material, component, or structure; and
measuring magnetic flux leakage that is synchronous with the cycles of compression and tension.
9. The method of claim 1, wherein the magnetic flux leakage is measured by:
capturing a first scan of the material when the material is in compression;
capturing a second scan of the material when the material is in tension;
and differentiating the first and second scans.
10. The method of claim 2, wherein the magnetic flux leakage is measured by:
capturing a first scan of the material when the material is in tension;
capturing a second scan of the material when the material is in compression; and
differentiating the first and second scans.
11. The method of claim 1, wherein the phase of the synchronous magnetic flux leakage is characterized.
12. The method of claim 1, wherein amplitude and phase of the synchronous magnetic flux leakage are characterized.
13. The method of claim 1, wherein the changes in strain state are a mechanically-induced non-uniform strain.
14. The method of claim 1, wherein the magnitude of the flux leakage is modulated through use of an exterior magnetic bias field.
15. The method of claim 1, wherein the nonuniformity is a surface crack, strain, or corrosion; subsurface crack, strain, or corrosion; occluded crack, strain, or corrosion; dissimilar material joint; coating; alloy precipitate, inclusion, or slag; or any combination thereof.
16. The method of claim 9, wherein multiple scans are performed at different x, y and z coordinates to create a 3D image.
17. The method of claim 1, wherein a Fourier transformation is used to create a 3D image.
18. The method of claim 14, wherein the exterior magnetic bias field is induced by a Helmholtz coil.
19. The method of claim 14, wherein the exterior magnetic bias field is induced by a permanent magnet.
20. The method of claim 19, wherein the exterior magnetic bias field is induced by a Halbach array of permanent magnets.
21. The method of claim 19, wherein the exterior magnetic bias field is induced by an array of permanent magnets.
22. The method of claim 13, wherein application of ultrasonic energy produces the mechanically-induced non-uniform strain.
23. The method of claim 13, wherein application of acoustic energy produces the mechanically-induced non-uniform strain.
24. The method of claim 1, wherein the material comprises a ferrous material.
25. The method of claim 1, wherein the material is a non-ferrous material.
26. The method of claim 1, wherein the material has been manufactured through an additive manufacture process.
27. A system for detecting a nonuniformity in a material, component, or structure, the system comprising:
an ultrasound source;
one or more magnetometers; and
a magnetic field source;
wherein the ultrasound source is configured to induce a cycle of compression and tension in a test sample and the one or more magnetometers are configured to scan the test sample when it is in compression and when it is in tension; and
wherein the magnetic field source is configured to control the relative magnitude of any flux leakage in the test sample.
28. The system of claim 27, wherein the ultrasound source comprises an electronic transducer.
29. The system of claim 27, wherein the electronic transducer comprises a piezoelectric material.
30. The system of claim 27, wherein the magnetic field source comprises a Helmholtz coil.
31. The system of claim 27, wherein the magnetic field source comprises a permanent magnet.
32. The system of claim 27, wherein the magnetic field source comprises a set of permanent magnets configured in a Halbach array.
33. The system of claim 27, wherein the magnetic field source comprises a set of permanent magnets configured in a magnetic circuit.
34. The system of claim 27, wherein the magnetic field source comprises a wound-wire solenoid.
35. The system of claim 27, further comprising an imaging device configured for displaying an image of the test sample.
36. The system of claim 27, further comprising a processor and a set of computer-executable instructions configured to obtain a 3D image of the test sample from multiple scans by the one or more magnetometers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
an oxide semiconductor layer including indium, gallium, and zinc;
a first conductive layer including aluminum;
a second conductive layer including a high-melting-point metal material over the first conductive layer; and
a barrier layer including aluminum oxide,
wherein the barrier layer is formed in an edge portion of the first conductive layer, and
wherein the oxide semiconductor layer is provided in contact with the second conductive layer and the barrier layer.
2. The semiconductor device according to claim 1, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.
3. The semiconductor device according to claim 1, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.
4. The semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.
5. A semiconductor device comprising:
a gate insulating layer;
a gate electrode layer provided on one side of the gate insulating layer;
an oxide semiconductor layer provided on the other side of the gate insulating layer; and
a source electrode layer and a drain electrode layer, each comprising a first conductive layer including aluminum in contact with the gate insulating layer, a second conductive layer including a high-melting-point metal material over the first conductive layer, and a barrier layer a barrier layer including aluminum oxide at an edge portion of the first conductive layer,
wherein the oxide semiconductor layer is in contact with the second conductive layer and the barrier layer.
6. The semiconductor device according to claim 5, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.
7. The semiconductor device according to claim 5, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.
8. The semiconductor device according to claim 5, wherein the semiconductor device is one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.
9. A semiconductor device comprising:
a source electrode layer and a drain electrode layer, each comprising a first conductive layer including aluminum, a second conductive layer including a high-melting-point metal material over the first conductive layer, and a barrier layer a barrier layer including aluminum oxide at an edge portion of the first conductive layer;
an oxide semiconductor layer covering end portions of the source electrode layer and the drain electrode layer;
a gate insulating layer covering the oxide semiconductor layer; and
a gate electrode layer overlapping the end portions of the source electrode layer and the drain electrode layer with the oxide semiconductor layer and the gate insulating layer interposed therebetween,
wherein the oxide semiconductor layer is in contact with the second conductive layer and the barrier layer.
10. The semiconductor device according to claim 9, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.
11. The semiconductor device according to claim 9, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.
12. The semiconductor device according to claim 9, wherein the semiconductor device is one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.
13. A manufacturing method of a thin film transistor, comprising:
forming a source electrode layer and a drain electrode layer, each comprising a first conductive layer including aluminum, and a second conductive layer including a high-melting-point metal material over the first conductive layer;
forming a barrier layer including aluminum oxide by performing an oxidation treatment on an exposed edge portion of the first conductive layer; and
stacking an oxide semiconductor layer including indium, gallium, and zinc so that the oxide semiconductor layer is in contact with the second conductive layer and the barrier layer.
14. The manufacturing method of a thin film transistor according to claim 13, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.
15. The manufacturing method of a thin film transistor according to claim 13, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.
16. The manufacturing method of a thin film transistor according to claim 13, wherein the thin film transistor is incorporated in one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.