1. A watering jug for dispensing a measured amount of water to hanging plants, said jug comprising
a) a container for receiving a quantity of water to be dispensed;
b) a lid securable to a top portion of said container;
c) an intake tube extending through said lid;
d) a manually operable pump sitting atop said intake tube, said pump drawing a measured amount of water into said intake tube;
e) a discharge tube forming a juncture with, and extending outwardly from, said intake tube at a point beneath said pump;
f) a valve in said intake tube at said juncture allowing said pump to draw said measured amount of water from said container through said intake tube and redirect it into said discharge tube;
g) an elongated delivery tube extending from said discharge tube a distance exceeding a height of said container;
whereby said watering jug enables a person to deliver a measured amount of water conveniently and reliably to a hanging plant positioned several feet above herhis head
h) an extension sleeve formed over an end of said intake tube, said extension sleeve being movable between a plurality of distinctly defined fixed positions;
i) an adjustment handle attached to said extension sleeve, said adjustment handle having a plurality of teeth formed along at least one side thereof and extending through said lid, said plurality of teeth defining said plurality of distinctly defined fixed positions, a distance between a pair of said plurality of teeth defining a quantity of water which can be extracted from said container and delivered from said end of said delivery tube.
2. The watering jug of claim 1 further comprising a distal end of said elongated delivery tube having a curved portion to render its discharge opening downwardly directed.
3. The watering jug of claim 2 further comprising a sprinkling head affixed to said downwardly directed distal end.
4. The watering jug of claim 1 further comprising a rigid brace extending upwardly from said lid, underlying a significant portion of a length of said delivery tube, and being clipped in a plurality of places to said delivery tube to maintain said delivery tube in an upwardly angled position.
5. The watering jug of claim 1 wherein said lid has an opening in a rear portion thereof to permit filling of said jug without removing said lid.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of fabricating a buried plate electrode within a trench cell capacitor of a semiconductor substrate, comprising:
forming a trench within a semiconductor substrate;
forming an oxide collar in an upper portion of said trench;
depositing a conformal metal film to cover a lower portion of said trench and said oxide collar;
annealing said semiconductor substrate to form a self-aligned silicide layer in said lower portion of said trench; and
selectively removing all or portions of said conformal metal film from said oxide collar.
2. The method of claim 1 further comprising depositing hemispherical silicon grains in said trench prior to depositing said conformal metal film, such that said silicide layer has increased surface area.
3. The method of claim 1 further comprising forming a node dielectric over said self-aligned silicide layer.
4. The method of claim 3 further comprising depositing polysilicon over said node dielectric, depositing a second conformal metal film over said polysilicon and annealing said second conformal metal film to form a suicide node electrode within said trench.
5. The method of claim 4 further comprising depositing polysilicon to fill said trench, thereby forming a node electrode.
6. The method of claim 1, wherein said metal film is deposited by low pressure chemical vapor deposition at temperatures ranging between 40C and 700C.
7. The method of claim 6, wherein said low pressure chemical vapor deposition is performed at pressures between 1 mTorr and 500 mTorr.
8. The method of claim 7, wherein said low pressure chemical vapor deposition if performed by atomic layer chemical vapor deposition using a plasma enhanced process step.
9. The method of claim 1, wherein said annealing step is performed in a single-wafer rapid thermal annealing (RTA) system.
10. The method of claim 1, wherein said annealing step is performed in a large batch style furnace.
11. The method of claim 2, wherein said collar is formed by trench sidewall oxidation at an oxidizing pressure below 106 Torr.
12. An integrated circuit including a trench capacitor, said trench capacitor comprising:
an oxide collar formed in an upper portion of a trench etched into a semiconductor substrate; and
a metal silicide covering a lower portion of said trench as a buried plate electrode of said trench capacitor, said silicide being self-aligned to said collar by depositing a conformal metal film over said trench, including said collar, annealing said conformal metal film to form said metal silicide in said lower portion and etching unreacted metal film from said collar thereafter.
13. The trench capacitor of claim 12, wherein said trench has a bottle-shape.
14. The trench capacitor of claim 13 further comprising a layer of hemispherical silicon grains in said lower portion of said trench, over which said metal silicide is formed.
15. The trench capacitor of claim 12 further comprising a node dielectric covering said metal silicide.
16. The trench capacitor of claim 15 further comprising a metal silicide overlaying said node dielectric as a node electrode.
17. The trench capacitor of claim 15 further comprising a metal layer overlaying said node dielectric as a node electrode.