1. A wire harness manufacturing machine for attaching a terminal to a wire having a surrounding insulation jacket comprising:
a wire loader station constructed and arranged to measure and cut a wire having a surrounding insulation jacket and crimp a terminal to the insulation jacket of the wire during a loading process;
an ultrasonic welder station having a tip arranged for direct contact with the insulation jacket of the wire and an opposing anvil arranged for direct contact with the terminal during a welding process, so that the terminal and the insulation jacket of the wire can be disposed directly between the tip and the anvil and in direct contact with each other;
the tip and anvil being constructed and arranged to compress the wire directly to the terminal while galling a conductive core of the wire to the terminal,
the wire loader station and the ultrasonic welder station being in consecutive order,
wherein the wire loader station has a pair of opposing grippers for releasably gripping the insulation jacket, and a plunger that slides between the opposing grippers, the plunger having a longitudinal rib or elongated peak arranged to create a longitudinal imprint or split in the insulation jacket at a weld segment, and
the terminal and the tip of the ultrasonic welder station are constructed and arranged to be in compressive direct contact with the insulation jacket at a weld segment of the insulator jacket so that the insulation jacket flows away from the conductive core of the wire at the weld segment to form a displacement mass during an ultrasonic welding process.
2. The wire harness manufacturing machine set forth in claim 1 comprising:
the anvil having an upward facing work surface for directly contacting a bottom surface of the terminal; and
the ultrasonic welder station having a pair of ears projecting between the tip and the anvil, wherein the work surface is disposed substantially between the pair of ears to trap the conductive core between the tip and the terminal during the welding process.
3. The wire harness manufacturing machine set forth in claim 1 wherein the plunger has a concave crimp portion for engaging a crimp wing of the terminal.
4. A wire harness manufacturing machine in combination with a terminal having a flat wingless base portion to a wire having a surrounding insulation jacket comprising:
a wire loader station constructed and arranged to measure, cut, place and crimp a wire to a terminal of a wire harness during a loading process;
an ultrasonic welder station having a tip arranged for direct contact with the wire and an opposing anvil arranged for direct contact with the terminal during a welding process, so that the terminal and the wire can be disposed directly between the tip and the anvil and in direct contact with each other; and
wherein the tip and anvil are constructed and arranged to compress the wire directly to the terminal while galling a conductive core of the wire to the terminal,
the anvil having an upward facing work surface for directly contacting the flat wingless base portion of the terminal;
the tip having a downward facing work surface for directly contacting an insulation jacket of the wire during initiation of a welding process; and
the ultrasonic welder station having props engaged to and for supporting the tip and the anvil respectively, and a pair of ears engaged to one of the props, wherein the pair of ears extend upward on either side of the terminal for trapping the wire laterally between the tip and the terminal during the welding process;
the pair of ears being spaced apart from each other at a distance slightly greater than the width of the flat wingless base portion of the terminal.
5. The wire harness manufacturing machine set forth in claim 4 wherein the tip has a width almost as great as the distance between the pair of ears.
6. The wire harness manufacturing machine set forth in claim 4 wherein the work surface of the tip is smooth and the work surface of the anvil is knurled.
7. The wire harness manufacturing machine set forth in claim 4 wherein the pair of ears are constructed and arranged to be detachable from the prop.
8. The wire harness manufacturing machine set forth in claim 7 wherein the pair of ears are made of a softer metal than the anvil.
9. The wire harness manufacturing machine set forth in claim 8 wherein the tip and the anvil are made of hardened steel.
10. The wire harness manufacturing machine set forth in claim 8 wherein the anvil, the pair of ears, and the tip are coated with titanium nitride.
11. The wire harness manufacturing machine set forth in claim 4 wherein the pair of ears are engaged to the one of the props supporting the anvil.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An interband tunneling intersubband transition semiconductor laser comprising a first cladding layer, an active region structure layer, and a second cladding layer that are formed on a semiconductor substrate, and electrodes that are provided under the semiconductor substrate and above the second cladding layer respectively,
wherein the active region structure layer includes a quantum well layer and a quantum barrier layer that are stacked to have a heterostructure with broken bandgap energy, and allows interband tunneling to occur.
2. The semiconductor laser of claim 1, wherein in the active region structure layer, an intersubband transition and interband resonant tunneling of carriers consecutively occur when voltage is applied to the electrodes.
3. The semiconductor laser of claim 1, wherein the quantum well layer includes at least one selected from the group consisting of InAs, InGaAsSb, InAs, AlSb, and InAlSb.
4. The semiconductor laser of claim 1, wherein the quantum barrier layer includes at least one selected from the group consisting of GaSb, GaInSb, GaSb, GaInSb, and GaAlSb.
5. The semiconductor laser of claim 2, wherein the intersubband transition and the interband resonant tunneling occur in a cascade mode.
6. The semiconductor laser of claim 1, wherein each quantum well layer includes two material layers having different minimum energy levels of a conductive band, and
a maximum energy level of a valence band of the quantum barrier layer is higher than the higher of the minimum energy levels of the two material layers.
7. The semiconductor laser of claim 1, wherein each quantum barrier layer includes two material layers having different maximum energy levels of a valence band, and
a minimum energy level of a conduction band of the quantum well layer is lower than the lower of the maximum energy levels of the two material layers.
8. The semiconductor laser of claim 1, wherein the quantum well layer includes two material layers having different minimum energy levels of a conduction band,
the quantum barrier layer includes two material layers having different maximum energy levels of a valence band, and
the higher of the minimum energy levels of the conduction bands of the two material layers of the quantum well layer is lower than the lower of the maximum energy levels of the valence bands of the two material layers of the quantum barrier layer.
9. The semiconductor laser of claim 1, wherein the quantum well layer includes two material layers having different minimum energy levels of a conduction band,
the quantum barrier layer includes three material layers, wherein a middle material layer of the three material layers has a maximum energy level of a valence band that is lower than maximum energy levels of the valence bands of the other two materials, and
the higher of the minimum energy levels of the conduction bands of the two material layers of the quantum well layer is lower than the lowest of the maximum energy levels of the valence bands of the three material layers of the quantum barrier layer.
10. The semiconductor laser of claim 1, wherein the quantum barrier layer includes two material layers having different maximum energy levels of a valence band,
the quantum well layer includes three material layers, wherein a middle material layer of the three material layers has a minimum energy level of a conduction band that is lower than minimum energy levels of the conduction bands of the other two material layers, and
the lower of the maximum energy levels of the valence bands of the two material layers of the quantum barrier layer is higher than the highest of the minimum energy levels of the conduction bands of the three material layers of the quantum well layer.
11. The semiconductor laser of claim 1, wherein the quantum well layer includes a complex structure such as a multi quantum well structure or a superlattice structure.
12. The semiconductor laser of claim 1, further comprising:
a first waveguide layer between the first cladding layer and the active region structure layer;
a second waveguide layer between the second cladding layer and the active region structure; and
a buffer layer between the semiconductor substrate and the first cladding layer.