1. A self-rectified device, comprising:
a bottom electrode;
a patterned dielectric layer with a contact hole formed on the bottom electrode;
a memory formed at the bottom electrode and substantially aligned with the contact hole;
a top electrode formed on the bottom electrode and filling into the contact hole to contact the memory, the top electrode comprising a N+ type semiconductor material while the memory being made from a P type behavior material, or the top electrode comprising a P+ type semiconductor material while the memory being made from a N type behavior material; and
a conductive layer directly formed on the top electrode to contact the top electrode, wherein the bottom electrode and the conductive layer both comprise a same metal silicide material;
wherein the memory and the top electrode produce a self-rectified property.
2. The self-rectified device according to claim 1, wherein the P+ type semiconductor material has a P+ concentration above 1018 cm\u22123.
3. The self-rectified device according to claim 1, wherein the P+ type semiconductor material has a P+ concentration ranging from about 1018 cm\u22123 to about 1023 cm\u22123.
4. The self-rectified device according to claim 1, wherein the memory comprises WxSiyOz, CoxSiyOz, NixSiyOz, WOx, TiOx, NiOx, AlOx, CuOx, ZrOx, NbOx, TaOx, or TiNO.
5. The self-rectified device according to claim 1, wherein the bottom electrode is made of a conductive material, comprising metal or semiconductor.
6. The self-rectified device according to claim 1, wherein the patterned dielectric layer comprises a spacer besides the contact hole, and the memory is aligned with the contact hole and the spacer.
7. A method for manufacturing a self-rectified device, comprising:
forming a bottom electrode;
forming a patterned dielectric layer on the bottom electrode, and the patterned dielectric layer having a contact hole exposing the bottom electrode;
forming a memory at the bottom electrode, and the memory substantially aligned with the contact hole;
forming a top electrode on the bottom electrode and filling into the contact hole to contact with the memory; and
forming a conductive layer directly on the top electrode to contact the top electrode, wherein the bottom electrode and the conductive layer both comprise a same metal silicide material;
wherein the top electrode comprises a N+ type semiconductor material while the memory is made from a P type behavior material, or the top electrode comprises a P+ type semiconductor material while the memory is made from a N type behavior material, and the memory and the top electrode produce a self-rectified property.
8. The method according to claim 7, wherein the bottom electrode under the contact hole is oxidized to form the memory.
9. The method according to claim 7, wherein the memory is formed by subjecting the bottom electrode under the contact hole to an oxidation process, a down-stream plasma oxidation, an atomic layer deposition, a furnace, a rapid thermal oxidation, PVD oxide deposition, CVD oxide deposition, or chemical reaction oxidation.
10. The method according to claim 7, wherein the memory comprises WxSiyOz, CoxSiyOz, NixSiyOz, WOx, TiOx, NiOx, AlOx, CuOx, ZrOx, NbOx, TaOx, or TiNO.
11. A three-dimensional (3D) resistive memory structure, comprising:
a plurality of word lines arranged substantially in parallel;
a plurality of bit lines arranged substantially in parallel, and the bit lines substantially perpendicular to the word lines;
a plurality of electrodes arranged in parallel and extended in a vertical direction to the bit lines and the word lines, and the electrodes electrically connected to the bit lines and the word lines correspondingly, wherein each of the electrodes comprises a top electrode and a conductive layer directly formed on the top electrode to contact the top electrode; and
a plurality of memory devices, and each of the memory devices comprising a bottom electrode and a memory element formed on the bottom electrode, wherein each of the memory devices are formed on each sidewall of the electrodes, resulting in two memory devices of each self-rectified cell,
wherein each of the bottom electrodes and each of the conductive layers comprise a same metal silicide material, and each of the electrode comprises an N+ type semiconductor material while each of the memory elements is made from a P type behavior material, or each of the electrode comprises a P+ type semiconductor material while the memory elements is made from a N type behavior material, and a self-rectifying property is produced by the contact between the memory device and the electrode.
12. The three-dimensional resistive memory structure according to claim 11, wherein each electrode is connected to a drain side of an access transistor.
13. The three-dimensional resistive memory structure according to claim 11, wherein the P+ type semiconductor material has a P+ concentration above 1018 cm\u22123.
14. The three-dimensional resistive memory structure according to claim 11, wherein the P+ type semiconductor material has a P+ concentration ranging from about 1018 cm\u22123 to about 1023 cm\u22123.
15. A memory device, comprising:
a bottom electrode;
a memory element on the bottom electrode, the memory element being oxide of the bottom electrode;
a doped poly-silicon layer on the memory element; and
a conductive layer directly formed on the doped poly-silicon layer to contact the doped poly-silicon layer,
wherein the bottom electrode and the conductive layer both comprise a same metal silicide material, and the memory element is made from a P type behavior material when the doped poly-silicon layer is an N+ type polysilicon, or the memory element is made from a N type behavior material when the doped poly-silicon layer is an P+ type polysilicon.
16. The memory device according to claim 15, further comprising a spacer vertically disposed above the memory element, wherein a portion of the doped poly-silicon layer and the memory element are vertically aligned by the spacer.
17. The memory device according to claim 15, wherein the doped poly-silicon layer contain P+ or N+ concentration above 1018 cm\u22123.
18. The memory device according to claim 15, wherein the doped poly-silicon layer contain P+ or N+ concentration ranging from about 1018 cm\u22123 to about 1023 cm\u22123.
19. The memory device according to claim 15, wherein the doped poly-silicon layer contacts the memory element.
20. A method of reading a memory cell of a 3D memory device, comprising:
applying a voltage to a selected electrode, wherein the selected electrode comprises a top electrode and a conductive layer directly formed on the top electrode to contact the top electrode;
grounding a selected layer which is perpendicular to the selected electrode;
applying one third of the voltage to unelected layers; and
sensing the memory cell located in a crossover of the selected electrode and the selected layer, and the memory cell comprising a memory element formed on a bottom electrode and contacting the selected electrode, wherein the bottom electrode and the conductive layer both comprise a same metal silicide material;
wherein the memory element is made from a P type behavior material when the selected electrode comprises an N+ type semiconductor material, or the memory element is made from a N type behavior material when the selected electrode comprises an P+ type semiconductor material.
21. The method according to claim 20, further comprising floating unselected electrodes while the voltage is applied to the selected electrode.
22. The method according to claim 20, wherein the memory cell is located in the intersection of the selected electrode and the selected layer as a selected memory cell.
23. The method according to claim 22, wherein the selected memory cell is forward biased and all unselected memory cells in unselected electrodes are reverse biased, which allows the reading of a resistance state of the selected memory cell.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An optical fiber splice case comprising:
an enclosure base having a dividing wall defining a drop chamber on a first side of said wall and a splicing chamber on a second side of said wall;
a first and a second cover member being selectively sealingly engaged with opposing sides of said enclosure base; and,
said enclosure base includes an adapter bulkhead member having a plurality of optical fiber ports therethrough.
2. The optical fiber splice case according to claim 1, wherein said adapter bulkhead member includes an air valve therethrough.
3. The optical fiber splice case according to claim 1, wherein said bulkhead member includes at least one passageway adapted to receive a part of a feeder cable therethrough.
4. The optical fiber splice case according to claim 1, wherein said dividing wall includes an access port adapted to receive a fiber jumper therethrough.
5. The optical fiber splice case according to claim 1, wherein said second side of said dividing wall includes a plurality of tie down brackets.
6. The optical fiber splice case according to claim 1, wherein said second side of said dividing wall includes a pair of posts adapted for connecting a splicing tray thereto.
7. The optical fiber splice case according to claim 1, wherein said enclosure base further includes a lower and an upper sealing ring for mating engagement with a first and a second gasket contained within said first and said second cover members.
8. The optical fiber splice case according to claim 1, wherein at least one of said fiber ports includes a fiber adapter connected thereto.
9. The optical fiber splice case according to claim 8, wherein each said fiber adapter includes a first and a second o-ring, said first o-ring adapted for selectively sealing a dust cover against said fiber adapter, said second o-ring adapted for sealing said fiber adapter against said bulkhead member.
10. The optical fiber splice case according to claim 9, wherein each said fiber adapter includes a fiber connector for connecting to a fiber jumper.
11. The optical fiber splice case according to claim 1, wherein at least one of said cover members include an air valve therethrough.
12. The optical fiber splice case according to claim 1, wherein at least one of said cover members being hingedly engaged with said enclosure base.
13. The optical fiber splice case-according to claim 12, wherein said plurality of optic fiber ports each include a passageway adapted to receive a drop wire therethrough.
14. The optical fiber splice case according to claim 13, wherein said hingedly engaged cover member includes a drop wire seal for sealing said plurality of optical fiber ports.
15. An optical fiber splice case comprising:
an enclosure base includes a dividing wall having a splicing tray attached thereto;
said enclosure base further includes an adapter bulkhead member having a plurality of optical fiber ports adapted to selectively sealingly receive drop wires;
said drop wire connected to a fiber connector; and,
said fiber connector and said splicing tray include a fiber jumper therebetween.
16. The optical fiber splice case according to claim 15, further comprising a pair of cover members, each said cover member being contoured to selectively sealingly engage an opposing side of said enclosure base for providing access to one of a drop chamber and a splicing chamber.
17. A method of providing a fiber optic connection to a plurality of end users, comprising the steps of:
providing an optical fiber splice case having a selectively sealable cover member for accessing a splicing chamber and an end plate;
providing said splice case with a bulkhead having a plurality of optical fiber ports therethrough;
opening said cover member and installing a feeder cable between said end plate and said bulkhead in said splicing chamber;
connecting said feeder cable to a selected number of fiber jumpers;
connecting said selected number of fiber jumpers to a selected number of fiber connectors;
closing said cover member; and,
attaching a selected number of drop wires to said selected number of fiber connectors.
18. The method of providing a fiber optic connection according to claim 17, further includes:
providing said splice case with a plurality of fiber adaptors; and,
removing a selected number of dust covers from selected said fiber adapters to expose said selected number of fiber connectors.
19. The method of providing a fiber optic connection according to claim 18, further including the step of providing said selected number of drop wires with hardened connectors.
20. The method of providing a fiber optic connection according to claim 19, further including the step of providing said hardened connectors with threaded caps for mating engagement with said selected number of fiber connectors.
21. The method of providing a fiber optic connection according to claim 18, further including the step of opening another selectively sealed cover member for accessing a drop chamber.
22. A method of making an optical fiber splice case, comprising the steps of:
providing a double sided enclosure base having two chambers and a splicing tray in one of said chambers;
providing an end plate and an adapter bulkhead with a plurality of fiber adapters and a plurality of feeder cable ports;
said fiber adapters include fiber connectors;
connecting said fiber connectors, on one side of said bulkhead, with said splicing tray via a plurality of fiber jumpers;
installing a plurality of dust covers, on the other side of said bulkhead, to said fiber adapters; and,
enclosing and sealing said chambers with a pair of cover members selectively sealingly engaged with said end plate, said bulkhead and said enclosure base.
23. The method of making an optical fiber splice case according to claim 22, further including the step of selectively sealing said feeder cable ports with a plurality of plugs.
24. The method of making a splice case according to claim 22, further including the step of providing an air valve through said bulkhead to allow for pressurization and to check sealing integrity of said chambers.
25. An optical fiber splice case comprising:
an enclosure base including a dividing wall having, on one side, a splicing tray attached thereto;
said dividing wall having, on the other side, a connector plate attached thereto;
said connector plate and said splicing tray include a fiber jumper therebetween;
said enclosure base further including a bulkhead member having a plurality of fiber ports therethrough adapted to receive a plurality of fiber drops; and,
said connector plate includes a plurality of fiber connectors adapted to receive a terminal end of said fiber drops.