1. A radiation-emitting semiconductor chip, comprising:
an active layer having sides; and
a plurality of side surfaces bounding an extent of said active layer at said sides of said active layer, at least two of said side surfaces being disposed at an acute angle, being tilted and forming parallelograms.
2. The radiation-emitting semiconductor chip according to claim 1, including a substrate, wherein said active layer is disposed on said substrate.
3. The radiation-emitting semiconductor chip according to claim 2, wherein said active layer emits radiation, and a part of the radiation of said active layer is emitted in a direction of said substrate.
4. The radiation-emitting semiconductor chip according to claim 1, wherein said acute angle of said side surfaces in the form of the parallelograms is less than 80\xb0.
5. The radiation-emitting semiconductor chip according to claim 2, wherein said substrate is formed from a material selected from the group consisting of sapphire, gallium nitride, silicon carbide, zinc oxide, diamond and quartz glass.
6. A method for producing a radiation-emitting semiconductor chip, which comprises the steps of:
providing a substrate;
forming an active layer having sides above one surface of the substrate; and
separating the substrate and the active layer to form semiconductor chips, such that the semiconductor chips have a plurality of side surfaces bounding an extent of the active layer at the sides of the active layer with at least two of the side surfaces being disposed at an acute angle, being tilted and forming parallelograms.
7. The method according to claim 6, further comprising the step of disposing the active layer on the substrate.
8. The method according to claim 6, further comprising the steps of emitting radiation from the active layer, and emitting a part of the radiation of the active layer in a direction of the substrate.
9. The method according to claim 6, further comprising the step of forming the acute angle of the side surfaces in parallelogram at less than 80\xb0.
10. The method according to claim 6, further comprising the step of forming the substrate from a material selected from the group consisting of sapphire, gallium nitride, silicon carbide, zinc oxide, diamond and quartz glass.
11. The method according to claim 6, further comprising the steps of separating the substrate together with the active layer to form semiconductor chips, and separating the semiconductor chips along a separating surface running obliquely with respect to the surface.
12. The method according to claim 11, further comprising the step of using a sawing apparatus with an oblique saw blade to separate the semiconductor chips.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An exchange coupling film for improving exchange properties between an anti-ferromagnetic (AFM) layer and a SyAP pinned layer having a AP2coupling layerAP1 configuration in a magnetoresistive element, comprising:
an amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Ti, Si, or P, or a non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr, said exchange coupling film is formed within said AP2 portion of the SyAP pinned layer in the magnetoresistive element and said AP2 pinned layer is formed on said AFM layer.
2. The exchange coupling film of claim 1 wherein the magnetoresistive element is a GMR or TMR sensor in a recording head.
3. The exchange coupling film of claim 1 wherein the amorphous magnetic layer has a thickness between about 1 and 15 Angstroms.
4. The exchange coupling film of claim 1 wherein the non-magnetic layer has a thickness between about 1 and 5 Angstroms
5. The exchange coupling film of claim 1 wherein the AFM layer is comprised of IrMn and the AP2 portion of the pinned layer is comprised of CoFe.
6. The exchange coupling film of claim 1 wherein the amorphous magnetic layer has a has a CoFe(100-X)AX or CoFeNi(100-X)AX composition where A is an amorphous element and x<40 atomic %, or has a CoFe(100-X-Y)AXMY or CoFeNi(100-X-Y)AXMY composition wherein A and M are amorphous elements and x+y<40 atomic %.
7. A magnetoresistive element, comprising:
(a) a seed layer,
(b) an AFM layer,
(c) a pinned layer having a SyAP configuration represented by AP2 layercoupling layerAP1 layer wherein said AP1 layer contacts a spacer layer or tunnel barrier layer,
(d) at least one exchange coupling film formed within the AP2 layer and comprising an amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Ti, Si, or P, or a non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr,
(e) a spacer layer or tunnel barrier layer,
(f) a free layer, and
(g) a capping layer.
8. The magnetoresistive element of claim 7 further comprised of a second exchange coupling film formed between the AFM layer and AP2 layer.
9. A method of forming a magnetoresistive element, comprising:
(a) forming a seed layer on a substrate;
(b) forming an AFM layer on the seed layer; and
(c) forming a pinned layer on said AFM layer, said pinned layer has an AP2coupling layerAP1 configuration wherein the AP2 layer is a composite comprising:
(1) a lower portion of the AP2 layer that contacts said AFM layer;
(2) an insertion layer formed on the lower portion of the AP2 layer, said insertion layer is an amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Ti, Si, or P, or a non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr; and
(3) forming an upper portion of the AP2 layer on the insertion layer.
10. The method of claim 9 wherein the amorphous magnetic layer has a thickness between about 1 and 15 Angstroms or the non-magnetic layer has a thickness from about 1 to 5 Angstroms.
11. The method of claim 9 wherein the AFM layer is comprised of IrMn, the AP2 layer is made of CoFe, and the insertion layer has a CoFe(100-X)Ax or CoFeNi(100-X)AX composition where A is an amorphous element and x<40 atomic %, or has a CoFe(100-X-Y)AXMY or CoFeNi(100-X)AXMY composition wherein A and M are amorphous elements and x+y<40 atomic %.