1. A structure comprising:
a substrate;
a through-substrate-via (TSV) extending into the substrate; and
a metal layer formed over the substrate, wherein the metal layer is embedded in a dielectric layer, and wherein the dielectric layer lines the TSV.
2. The structure of claim 1, wherein the metal layer has a surface substantially at the same level with a surface of the TSV structure.
3. The structure of claim 1, wherein the TSV is wider at an end near the metal layer.
4. The structure of claim 1, wherein the dielectric layer that lines the TSV is below a lower surface of the metal layer by a thickness in a range from about 2000 \u212b to about 20,000 \u212b.
5. The structure of claim 1, wherein the difference of width at one end of the TSV and the other end of the TSV is in a range from about 2000 \u212b to about 60,000 \u212b.
6. The structure of claim 1 further comprising an etch stop layer underneath the dielectric layer.
7. The structure of claim 6, wherein the etch stop layer is made of a material selected from silicon nitride, silicon oxynitride, silicon carbide, and a combination thereof, and wherein the thickness of the etch stop layer is in a range from about 100 \u212b to about 1000 \u212b.
8. The structure of claim 1, wherein the dielectric layer is made of undoped silicate glass (USG) and has thickness in a range from about 1000 \u212b to about 30,000 \u212b.
9. The structure of claim 1, wherein the metal layer is a top metal layer and is covered by a passivation layer.
10. The structure of claim 1, wherein the structure is part of an interposer and the metal layer is part of an interconnect of the interposer.
11. The structure of claim 1, wherein the substrate has active devices.
12. A structure comprising:
a substrate;
a through-substrate-via (TSV) extending into the substrate; and
a metal layer formed over the substrate, wherein the metal layer is embedded in a dielectric layer, and wherein the dielectric layer lines the TSV, wherein the metal layer has a surface substantially at the same level with a surface of the TSV structure, wherein the TSV is wider at an end near the metal layer.
13. A method of forming a structure, the method comprising:
forming a through-substrate-via (TSV) opening in a substrate;
depositing a dielectric layer on the substrate, wherein the dielectric layer lines the TSV opening,
patterning and etching the dielectric layer to form an opening for a metal structure and a wider opening at one end of the TSV opening,
filling the opening for the metal structure and the TSV openings with one conductive material; and
removing excess conductive material from surfaces of the dielectric layer.
14. The method of claim 13, wherein forming the TSV opening comprises:
depositing an etch stop layer on the substrate;
patterning and etching the substrate to form the TSV opening.
15. The method of claim 13, wherein the wider opening at one end of the TSV is wider than the other end by an amount in a range from about 2000 \u212b to about 60000 \u212b.
16. The method of claim 13, wherein the opening of the metal structure and the TSV openings are lined by a diffusion barrier layer.
17. The method of claim 13, wherein the dielectric layer that lines the TSV opening is etched to be below a lower surface of the metal structure by an thickness in a range from about 2000 \u212b to about 20,000 \u212b.
18. The method of claim 13, wherein the excess conductive material is remove by chemical-mechanical polishing, and wherein the metal structure is not a first-level metal to prevent damaging the gate structures.
19. The method of claim 13, wherein there is an etch stop layer underneath the dielectric layer, and wherein the etch stop layer is made of a material selected from silicon nitride, silicon oxynitride, silicon carbide, and a combination thereof, and wherein the thickness of the etch stop layer is in a range from about 100 \u212b to about 1000 \u212b.
20. The method of claim 13, wherein the dielectric layer is made of undoped silicate glass (USG) and has thickness in a range from about 1000 \u212b to about 30,000 \u212b.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A backpack kit comprising:
a cart, the cart including a top portion and a bottom support structure, the bottom support structure having a first wheel assembly, a second wheel assembly, a first support assembly and a second support assembly, the top portion having a horizontal bar attached between two upright arms, the two upright arms extending from the horizontal bar in an upwards and downwards direction, in the upwards direction the two upright arms are attached to a handle and in the downward direction the two upright arms are attached to the bottom support structure; and
a backpack including:
an upper cart attachment, the upper cart attachment includes a) at least one upper flap coupled to an upper portion of the backpack, b) a first hook and loop strip being attached to the at least one upper flap and c) a second hook and loop strip being attached to the backpack at a point below the at least one upper flap, wherein, when the upper cart attachment is in a closed position, the first hook and loop strip aligns and engages with the second hook and loop strip so that the at least one upper flap is laid over the horizontal bar and secures the horizontal bar to the backpack; and
a lower cart attachment, the lower cart attachment includes a first lower flap being coupled to a bottom of the backpack, a second lower flap being coupled to a bottom of the backpack, the first lower flap is attached to the backpack on a first side of the bottom support structure, the second lower flap is attached to the backpack on a second side of the bottom support structure, the first side being opposite the second side, the first lower flap completely fills the space between the first wheel structure and the first support structure on the first side of the bottom support structure, the second lower flap completely fills the space between the second wheel structure and the second support structure on the second side of the bottom support structure, the first lower flap having a third hook and loop strip and the second lower flap having a fourth hook and loop strip, wherein, when the lower cart attachment is in a closed position, the third hook and loop strip aligns and engages with the fourth hook and loop strip so that the first lower flap and the second flap lower flap surround the bottom support structure of the cart with the first lower flap and the second flap being tightly laid between the first wheel assembly, the second wheel assembly, the first support assembly and the second support assembly of the bottom support structure thereby securing the backpack to the bottom support structure of the cart; wherein the upper flap and lower flaps are the only attachment between the backpack and the cart.
2. The cart attachment of claim 1 wherein the second hook and loop strip is attached to the backpack slightly below the horizontal bar of the cart.
3. The cart attachment of claim 1 wherein the upper flap is attached to the backpack slightly above the horizontal bar of the cart.
4. The cart attachment of claim 1 wherein the bottom support structure includes a platform.
5. The cart attachment of claim 4 wherein the first bottom flap is attached to the backpack on one side of the platform and the second bottom flap is attached to the backpack on the other side of the platform.
6. The cart attachment of claim 1 wherein the cart is a wheeled cart.
7. The cart attachment of claim 1 wherein, when the cart is secured to the backpack, the backpack may be wheeled.
8. The cart attachment of claim 1 wherein the backpack has straps.
9. The cart attachment of claim 8 wherein, when the cart is not secured to the backpack, the backpack may carried on a back of a user via the straps.