1-20. (canceled)
21. A vector comprising a first promoter which can be operably linked to a gene encoding a heterologous protein, wherein the first promoter is capable of inducing expression of the heterologous protein in the presence of one or more nucleotides with or without a phosphate group and wherein the first promoter includes a xapA promoter comprising a ribosomal binding site having a sequence of AGGAGG xxxxx, AGGAGG xxxxxx, AGGAGA xxxxx, or AGGAGA xxxxxx.
22. The vector of claim 21, wherein the vector is a plasmid or a bacteriophage.
23. The vector of claim 21, wherein the vector is an inducible expression vector.
24. The vector of claim 21, wherein the first promoter is capable of inducing expression of the heterologous protein in the presence of xanthosine.
25. The vector of claim 21, wherein the vector further comprises a regulatory element which is capable of regulating the expression induced by the first promoter.
26. The vector of claim 25, wherein the regulatory element is a nucleic acid sequence.
27. The vector of claim 25, wherein the regulatory element contains a nucleic acid sequence from a xapR gene.
28. The vector of claim 25, wherein a second promoter is operably linked to the regulatory element.
29. The vector of claim 28, wherein the second promoter is an inducible or a constitutive promoter.
30. The vector of claim 28, wherein the second promoter contains a nucleic acid sequence from a xapR promoter.
31. The vector of claim 21, wherein the vector further comprises a gene encoding a heterologous protein, wherein the gene is operably linked to the first promoter.
32. The vector of claim 31, wherein the heterologous protein is a cytokine, chemokine, hormone, enzyme or antigen.
33. An expression vector comprising an isolated nucleic acid, wherein the isolated nucleic acid comprises a regulatory xapR gene from the xanthosine operon together with a promoter from a xapA gene.
34. A xapA promoter sequence comprising a ribosomal binding site having a sequence of AGGAGG xxxxx, AGGAGG xxxxxx, AGGAGA xxxxx, or AGGAGA xxxxxx.
35. A host cell comprising the vector of claim 21.
36. A host cell comprising the vector of claim 33.
37. A host cell comprising the promoter sequence of claim 34.
38. A method for the expression of a heterologous protein comprising culturing a host cell of claim 35 under a condition which induces the expression of the heterologous protein.
39. A method for the expression of a heterologous protein comprising culturing a host cell of claim 36 under a condition which induces the expression of the heterologous protein.
40. A method for the expression of a heterologous protein comprising culturing a host cell of claim 37 under a condition which induces the expression of the heterologous protein.
41. The method of claim 38 further comprising purification of the heterologous protein.
42. The method of claim 39 further comprising purification of the heterologous protein.
43. The method of claim 40 further comprising purification of the heterologous protein.
44. The method of claim 38, wherein the heterologous protein is a cytokine, chemokine, hormone, enzyme or antigen.
45. The method of claim 39, wherein the heterologous protein is a cytokine, chemokine, hormone, enzyme or antigen.
46. The method of claim 40, wherein the heterologous protein is a cytokine, chemokine, hormone, enzyme or antigen.
47. A protein produced by the method of claim 38.
48. A protein produced by the method of claim 39.
49. A protein produced by the method of claim 40.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A ferroelectric element manufacturing method comprising:
forming a buffer layer, which also functions as a sacrificial layer, on a single crystal substrate;
forming a ferroelectric element on the buffer layer;
separating the ferroelectric element and the single crystal substrate; and
arranging the ferroelectric element that was separated from the single crystal substrate on any substrates, wherein
the separating of the ferroelectric element and the single crystal substrate includes:
pasting a supportable material for supporting the ferroelectric element over a top face of the ferroelectric element; and
separating the ferroelectric element from the single crystal substrate by etching the buffer layer, after the supportable material has been pasted, and
the arranging of the ferroelectric element that was separated from the single crystal substrate on any substrates includes:
applying adhesive over a top face of any substrates and a bottom face of the ferroelectric element, and joining the separated ferroelectric element to any substrates; and
removing the supportable material that was pasted on the top face of the ferroelectric element.