1. A sensor electrode for interrogating an earth formation, the sensor electrode comprising:
a geometry that reduces spatial aliasing in formation data when the sensor electrode is disposed in an array.
2. The sensor electrode as in claim 1, wherein a geometry for the sensor electrode comprises one of a diamond shape, a one-row zigzag shape, a one-row double zigzag shape, a one-row triple zigzag shape and a one-row wavelet shape.
3. The sensor electrode as in claim 1, wherein the geometry of the sensor electrode provides for high resolution in at least one of vertical direction and a horizontal direction.
4. The sensor electrode as in claim 1, wherein the geometry provides for reduction of spatial offset.
5. The sensor electrode as in claim 1, wherein the geometry provides for reduction in angular dependance.
6. The sensor electrode as in claim 1, wherein the geometry provides for improved frequency response.
7. The sensor electrode as in claim 1, wherein the geometry comprises smoothed and tuned edges.
8. The sensor electrode as in claim 1, wherein the geometry of the sensor electrode comprises dimensions such that an apparent horizontal size of the sensor electrode is larger than a horizontal separation when the sensor electrode is disposed in the array.
9. A method for designing a sensor electrode for interrogating an earth formation, the method comprising:
determining a geometry for the sensor electrode;
evaluating a response function for the sensor electrode; and
adjusting a geometry of the sensor electrode to improve the response function.
10. The method as in claim 9, wherein the response function comprises a response function for at least one of spatial aliasing, spatial offset, angular dependance, frequency response and resolution.
11. The method as in claim 9, wherein a geometry for the sensor electrode is one of a diamond shape, a one-row zigzag shape, a one-row double zigzag shape, a one-row triple zigzag shape and a one-row wavelet shape.
12. The method as in claim 9, wherein determining comprises selecting dimensions for the sensor electrode such that in an array of the sensor electrodes, (1apparent horizontal dimension of the sensor electrode) is less than (2horizontal separation of each sensor electrode of the array).
13. A computer program product stored on machine readable media, the product comprising machine executable instructions for designing a sensor electrode for interrogating an earth formation, the instructions comprising instructions for:
receiving an input geometry for the sensor electrode;
evaluating at least one response function for the sensor electrode; and
adjusting the geometry according to desired response for each response function.
14. The computer program product as in claim 13, wherein the response function comprises a Nyquist criteria.
15. An array of sensor electrodes for interrogating an earth formation, the array comprising sensor electrodes comprising a one-row wavelet geometry.
16. The array as in claim 15, wherein the geometry provides for reduction of spatial offset.
17. The array as in claim 15, wherein the geometry provides for reduction in angular dependance.
18. The array as in claim 15, wherein the geometry provides for improved frequency response.
19. The array as in claim 15, wherein the geometry comprises smoothed and tuned edges.
20. The array as in claim 15, wherein the geometry of the sensor electrode comprises dimensions such that an apparent horizontal size of the sensor electrode is larger than a horizontal separation when the sensor electrode is disposed in the array.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A substrate based on silicon nitride for semiconductor components, characterized in that the substrate contains, as crystalline phases, silicon nitride (Si3N4), silicon carbide (SiC) and silicon oxynitride (Si2N2O), and the crystalline silicon content is 5%, based on the sum of the crystalline phases which are present, the shrinkage during production is <5% and the open porosity of the substrate is <15% by volume.
2. The substrate as claimed in claim 1, characterized in that the substrate contains sintering additives in a total concentration of <20% by weight, which additives form a liquid phase during production and are present in the substrate as an amorphous secondary phase or as more complex additional crystalline phases.
3. The substrate as claimed in claim 2, characterized in that the sintering additives are SiO2, alkaline earth metal oxides, oxides from group III B and IV B of the periodic system, including the rare earth oxides V, Nb, Ta, Cr, Fe, Co andor Ni oxide alone or in combination with B2O3, Al2O3 andor TiO2.
4. The substrate as claimed in at least one of claims 1 to 3, characterized in that the substrate contains carbides, nitrides, carbonitrides, oxynitrides, silicides andor borides of the elements Si, Al, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ca andor Ni in concentrations of <10% by weight, calculated as the corresponding compound, the total content of these constituents not exceeding 10% by weight.
5. The substrate as claimed in at least one of claims 1 to 4, characterized in that the substrate contains carbides, nitrides, carbonitrides, suicides andor borides of the elements Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn andor Fe as a further main crystalline phase in concentration of 30% by volume and has an electrical conductivity of 0,1 Sm.
6. The substrate as claimed in at least one of claims 4 to 5, characterized in that the abovementioned substances are introduced as inorganic fibers, whiskers, platelets or particles andor are present in this form in the substrate.
7. The substrate as claimed in at least one of claims 1 to 6, characterized in that the substrate contains carbon fibers which are present as such in the substrate or have partially or completely reacted to form more complex compounds.
8. A process for producing the substrate as claimed in one of claims 1 to 7, characterized in that the starting mixture is mixed intensively, shaped by pressing, slip casting, hot pressing, extrusion or tape casting, crosslinked and pyrolyzed in an inert atmosphere, then nitrided and if necessary sintered.
9. The process as claimed in claim 8, characterized in that the shaping of the starting mixture takes place by tape casting of a solids suspension based on the silicon-organic polymer dissolved in an organic solvent.
10. The process as claimed in claim 9, characterized in that the solids suspension contains further organic additives in addition to the silicon-organic polymer.
11. The process as claimed in at least one of claims 8 to 10, characterized in that the nitriding takes place at temperatures of <1500 C. at an N2 pressure of 1 bar.
12. The process as claimed in at least one of claims 8 to 10, characterized in that the nitriding takes place at temperatures of <1500 C. under a N2 pressure of from 1 to 100 bar.
13. The use of the substrate as claimed in one of claims 1 to 7 for producing semiconductor components.
14. The use of the substrate as claimed in one of claims 1 to 7 for producing thin-film solar cells.
15. A semiconductor component which includes the substrate as claimed in at least one of claims 1 to 7.
16. The semiconductor component as claimed in claim 15, characterized in that one or more crystalline silicon layers are deposited on the substrate.
17. The semiconductor component as claimed in claim 16, characterized in that one or more additional layers are applied between the substrate and the silicon layers.
18. The semiconductor component as claimed in claim 17, characterized in that the additional layers are silicon nitride, silicon oxide or silicon carbide layers.
19. The semiconductor component as claimed in at least one of claims 15 to 18, characterized in that the semiconductor component is a thin-film solar cell.