1. A method of manufacturing a semiconductor device, comprising the steps of:
forming N circuit units including thin-film transistors at a pitch L (m), on a substrate; and
forming output terminals of said circuit units and at least one bus interconnect for supplying a voltage to said circuit units, wherein the pitch L (m) of said circuit units, the number N of said circuit units, and a resistance R (\u03a9m) per unit length of said at least one bus interconnect are related to each other as follows:
R\xd7N2\xd7L\u22664\xd7103
wherein said step of forming output terminals of said circuit units and at least one bus interconnect includes the step of simultaneously forming at least a portion of said bus interconnect and at least a portion of said output terminals.
2. A method of manufacturing a semiconductor device, comprising the steps of:
forming N circuit units including thin-film transistors at a pitch L (m), on a substrate; and
forming output terminals of said circuit units and at least one bus interconnect for supplying a voltage to said circuit units, wherein the pitch L (m) of said circuit units, the number N of said circuit units, and a resistance R (\u03a9m) per unit length of said at least one bus interconnect are related to each other as follows:
R\xd7N2\xd7L\u226616\xd7103
wherein said step of forming output terminals of said circuit units and at least one bus interconnect includes the step of simultaneously forming at least a portion of said bus interconnect and at least a portion of said output terminals.
3. A method according to claim 1, wherein said step of simultaneously forming at least a portion of said bus interconnect and at least a portion of said output terminals is carried out by either one of an electrolytic plating process, an electroless plating process, a screen printing process for printing a conductive paste, a printing process for spraying a conductive paste, a process of applying and then etching a conductive film, and a process of applying and then etching a metal foil.
4. A method according to claim 2, wherein said step of simultaneously forming at least a portion of said bus interconnect and at least a portion of said output terminals is carried out by either one of an electrolytic plating process, an electroless plating process, a screen printing process for printing a conductive paste, a printing process for spraying a conductive paste, a process of applying and then etching a conductive film, and a process of applying and then etching a metal foil.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A multi-layer wick for a loop heat pipe, comprising:
a primary wick, the primary wick comprising:
a first layer; and
a second layer, wherein the first layer surrounds the second layer; and
a secondary wick, wherein the second layer of the primary wick surrounds the secondary wick.
2. The multi-layer wick of claim 1, wherein the first layer of the primary wick is made of a high thermal conductivity material. such as metal.
3. The multi-layer wick of claim 2, wherein the high thermal conductivity material is nickel.
4. The multi-layer wick of claim 1, wherein the second layer of the primary wick is made of a low thermal conductivity material.
5. The multi-layer wick of claim 5, wherein the low thermal conductivity material is ceramic.
6. The multi-layer wick of claim 1, wherein the multi-layer wick connects a compensation chamber to an evaporator in the loop heat pipe.
7. The multi-layer wick of claim 6, wherein a portion of the secondary wick is inside the compensation chamber.
8. The multi-layer wick of claim 1, wherein the primary wick further comprises a third layer, and wherein the second layer of the primary wick is surrounding the third layer of the primary wick.
9. A loop heat pipe comprising:
a compensation chamber;
an evaporator; and
a multi-layer wick connecting the compensation chamber to the evaporator, the multi-layer wick comprising:
a primary wick, the primary wick comprising:
a first layer; and
a second layer, wherein the first layer surrounds the second layer; and
a secondary wick, wherein the second layer of the primary wick surrounds the secondary wick.
10. The loop heat pipe of claim 9, wherein the first layer of the primary wick is a high thermal conductivity material.
11. The loop heat pipe of claim 10, wherein the high thermal conductivity material is nickel.
12. The loop heat pipe of claim 9, wherein the second layer of the primary wick is made of a low thermal conductivity material.
13. A method of fabricating a multi-layer wick, comprising:
machining the outer diameter of an inner layer larger than the inner diameter of an outer layer;
heating the outer layer to enlarge the inner diameter;
inserting the inner layer into the outer layer; and
cooling the inner layer and the outer layer.
14. The method of claim 13, wherein the multi-layer wick comprises:
a primary wick, the primary wick comprising:
a first layer; and
a second layer, wherein the first layer surrounds the second layer; and
a secondary wick, wherein the second layer of the primary wick surrounds the secondary wick.
15. The method of claim 13, wherein the inner layer is comprised of the second layer of the primary wick and the secondary wick.
16. The method of claim 13, wherein the outer layer is comprised of the first layer of the primary wick.
17. The method of claim 12, wherein the first layer of the primary wick is made of a high thermal conductivity material
18. The method of claim 12, wherein the inner layer is made of a low thermal conductivity material.
19. A multi-layer wick for a loop heat pipe, comprising:
a primary wick, the primary wick comprising:
a first layer; and
a second layer, wherein the first layer surrounds the second layer.
20. The multi-layer wick of claim 18, further comprising a secondary wick, wherein the first second of the primary wick surrounds the secondary wick.
21. The multi-layer wick of claim 19, wherein the primary wick further comprises a third layer, and wherein the second layer of the primary wick is surrounding the third layer of the primary wick.