1461183780-5e6089e1-d7d3-4c52-8755-44bca6f086f3

1. A method for linear hinting in streaming media data files, comprising:
configuring a first level linear hinting index with pointers to a second level non-sequential hinting index;
providing said second level non-sequential hinting index with pointers to a non-sequential media data file; and
searching for media data blocks in said non-sequential media data file by accessing said first level linear hinting index to get a pointer to said second level non-sequential hinting index which in turn provides a final pointer to a particular media data block in said non-sequential media data file.
2. The method of claim 1, further comprising:
not first consulting said first level linear hinting index for a next access; and
obtaining a next media data block in said non-sequential media data file by accessing only a next entry in said second level non-sequential hinting index to fetch a corresponding pointer to said next media data block in said non-sequential media data file.
3. The method of claim 1, further comprising:
marking a discontinuity in the order of said media data blocks in said non-sequential media data file with a special character placed in a corresponding pointer to a last continuous media data block in said second level non-sequential hinting index.
4. The method of claim 3, further comprising:
if said special character was not obtained in a last access, obtaining a next media data block in said non-sequential media data file by accessing only a next entry in said second level non-sequential hinting index to fetch a corresponding pointer to said next media data block in said non-sequential media data file, and not first consulting said first level linear hinting index;
otherwise, returning to search for media data blocks in said non-sequential media data file by accessing said first level linear hinting index to get a pointer to said second level non-sequential hinting index which in turn provides a final pointer to a particular media data block in said non-sequential media data file.
5. The method of claim 1, further comprising:
packing said first level linear hinting index and said second level non-sequential hinting index together in a single file with a media file descriptor; and
associating at least one separate media data file.
6. The method of claim 1, further comprising:
packing said first level linear hinting index and said second level non-sequential hinting index together in a single file with a media file descriptor, and at least one non-sequential media data file.
7. The method of claim 1, further comprising:
organizing an index section is such that said first level linear hinting index has a linear organization corresponding to timing tick key values.
8. The method of claim 1, further comprising:
organizing an index section is such that said second level hinting index has a non-sequential organization corresponding to timing tick key values.
9. The method of claim 1, further comprising:
organizing an index section is such that said second level hinting index includes a special mark in the last of a sequential run of timing tick key values associated with its entries.
10. The method of claim 1, further comprising:
organizing a data section is such that it accepts media data blocks associated in sequential runs of timing tick key values as its entries.
11. An apparatus, comprising:
a memory storage; and
a processing unit coupled to the memory storage, the processing unit being configured to:
configure a first level linear hinting index with pointers to a second level non-sequential hinting index;
provide said second level non-sequential hinting index with pointers to a non-sequential media data file; and
search for media data blocks in said non-sequential media data file by accessing said first level linear hinting index to get a pointer to said second level non-sequential hinting index which in turn provides a final pointer to a particular media data block in said non-sequential media data file.
12. The apparatus of claim 11, further comprising the processing unit being configured to obtain a next media data block in said non-sequential media data file by accessing only a next entry in said second level non-sequential hinting index to fetch a corresponding pointer to said next media data block in said non-sequential media data file.
13. The apparatus of claim 11, further comprising the processing unit being configured to mark a discontinuity in the order of said media data blocks in said non-sequential media data file with a special character placed in a corresponding pointer to a last continuous media data block in said second level non-sequential hinting index.
14. The apparatus of claim 13, further comprising the processing unit being configured to:
if said special character was not obtained in a last access, obtain a next media data block in said non-sequential media data file by accessing only a next entry in said second level non-sequential hinting index to fetch a corresponding pointer to said next media data block in said non-sequential media data file, and not first consulting said first level linear hinting index;
otherwise, returning to search for media data blocks in said non-sequential media data file by accessing said first level linear hinting index to get a pointer to said second level non-sequential hinting index which in turn provides a final pointer to a particular media data block in said non-sequential media data file.
15. The apparatus of claim 11, further comprising the processing unit being configured to:
pack said first level linear hinting index and said second level non-sequential hinting index together in a single file with a media file descriptor; and
associating at least one separate media data file.
16. The apparatus of claim 11, further comprising the processing unit being configured to pack said first level linear hinting index and said second level non-sequential hinting index together in a single file with a media file descriptor, and at least one non-sequential media data file.
17. The apparatus of claim 11, further comprising the processing unit being configured to organize an index section is such that said first level linear hinting index has a linear organization corresponding to timing tick key values.
18. The apparatus of claim 11, further comprising the processing unit being configured to organize an index section is such that said second level hinting index has a non-sequential organization corresponding to timing tick key values.
19. The apparatus of claim 11, further comprising the processing unit being configured to organize an index section is such that said second level hinting index includes the special mark in the last of a sequential run of timing tick key values associated with its entries.
20. The apparatus of claim 11, further comprising the processing unit being configured to organize a data section is such that it accepts media data blocks associated in sequential runs of timing tick key values as its entries.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for manufacturing a semiconductor device, comprising:
forming a first interlayer dielectric layer on a substrate;
forming at least one trench for an air gap in the first interlayer dielectric layer;
forming an etch stop layer on the first interlayer dielectric layer having the at least one trench for an air gap;
selectively etching the etch stop layer to form a plurality of holes;
forming a photoresist layer in the at least one trench for an air gap before forming the etch stop layer on the first interlayer dielectric layer; and
removing the photoresist layer in the at least one trench after selectively etching the etch stop layer to form the plurality of holes, thereby forming an air gap in the first interlayer dielectric layer.
2. The method according to claim 1, further comprising:
forming a second etch stop layer having no holes formed therein on the etch stop layer.
3. The method according to claim 1, further comprising:
forming a second interlayer dielectric layer on the etch stop layer.
4. The method according to claim 1, wherein the etch stop layer comprises SiN.
5. The method according to claim 1, wherein the plurality of holes are densely formed in the etch stop layer by etching the etch stop layer using a reactive ion etching (RIE) process.
6. The method according to claim 1, wherein the holes formed in the etch stop layer have a diameter ranging from approximately 0.16 \u03bcm to approximately 0.2 \u03bcm.
7. A method for manufacturing a semiconductor device, comprising:
forming a first interlayer dielectric layer on a substrate;
forming at least one trench for an air gap in the first interlayer dielectric layer;
forming an etch stop layer on the first interlayer dielectric layer having the at least one trench for an air gap;
selectively etching the etch stop layer to form a plurality of holes;
forming a first photoresist layer on the first interlayer dielectric layer including the at least one trench for an air gap;
selectively removing the first photoresist layer on a trench defined for formation of a metal line; and
forming a metal line by depositing metal in the trench defined for formation of the metal line and planarizing the metal layer and the first photoresist layer until the first interlayer dielectric layer is exposed.
8. The method according to claim 7, wherein selectively etching the etch stop layer to form a plurality of holes comprises:
forming a second photoresist layer on the etch stop layer;
selectively removing the second photoresist layer to expose a plurality of small regions of the etch stop layer in regions above the first photoresist layer; and
etching the exposed regions of the etch stop layer using the second photoresist layer as an etch mask, thereby exposing the first photoresist layer through holes in the etch mask layer, the in method further comprising:
removing the first photoresist layer formed under the etch stop layer to form an air gap in the first interlayer dielectric layer.
9. The method according to claim 8, wherein removing the first photoresist layer formed under the etch stop layer comprises supplying an ashing solution through the holes of the etch stop layer.