1. A method of fabricating a semiconductor device, comprising:
forming a first gate trench in a first active region of a semiconductor substrate;
forming a first gate layer partially filling the first gate trench; and
first implanting ions in the first gate layer and in the first active region on both sides of the first gate layer such that (1) the first gate layer becomes a first gate electrode of a first conductivity type and (2) first impurity regions of the first conductivity type are formed on both sides of the first gate electrode.
2. The method of claim 1, before implanting the ions, the method further comprising:
forming a spacer insulating layer on the entire surface of the semiconductor substrate having the first gate layer; and
forming a first spacer on an upper sidewall of the first gate trench by removing at least a portion of the spacer insulating layer.
3. The method of claim 2, wherein the spacer insulating layer includes at least one of a silicon oxide layer, a silicon oxynitride (SiON) layer and a silicon nitride layer.
4. The method of claim 1, further comprising:
forming a first buffer region in the first active region before forming the first gate trench,
wherein the first buffer region has the same conductivity type as the first impurity regions and has a lower impurity concentration than the first impurity regions.
5. The method of claim 1, wherein forming the first gate layer comprises:
forming a first gate layer material on the semiconductor substrate having the first gate trench, the first gate layer material including at least one of a silicon (Si) layer, a germanium (Ge) layer and a SiGe layer; and
removing at least a portion of the gate layer material.
6. The method of claim 1, wherein the first conductivity type is an N-type or a P-type.
7. The method of claim 1, further comprising:
forming a second gate trench in a second active region of the semiconductor substrate while the first gate trench is formed;
forming a second gate layer partially filling the second gate trench while the first gate layer is formed; and
second implanting ions in the second gate layer and in the second active region on both sides of the second gate layer such that (1) the second gate layer becomes a second gate electrode of a second conductivity type different from the first gate electrode and (2) second impurity regions of the second conductivity type are formed on both sides of the second gate electrode,
wherein the first implanting is performed for simultaneously forming the first gate electrode and the first impurity regions, and wherein the second implanting is performed for simultaneously forming the second gate electrode and the second impurity regions.
8. The method of claim 7, further comprising:
forming an isolation region in the semiconductor substrate to define the first and second active regions before forming the first and second gate trenches.
9. The method of claim 7, further comprising:
forming a first buffer region in the first active region before forming the first and second gate trenches, wherein the first buffer region has the same conductivity type as the first impurity regions and has a lower impurity concentration than the first impurity regions; and
forming a second buffer region in the second active region before or after forming the first buffer region, wherein the second buffer region has the same conductivity type as the second impurity regions and has a lower impurity concentration than the second impurity regions.
10. The method of claim 9, further comprising:
forming a well region in the second active region, the well region having a conductivity type different from the conductivity type of the second buffer region.
11. The method of claim 7, before implanting the ions, the method further comprising:
forming a spacer insulating layer on the entire surface of the semiconductor substrate having the second gate layer; and
forming a second spacer on an upper sidewall of the second gate trench by removing at least a portion of the spacer insulating layer.
12. The method of claim 1, further comprising:
forming a first gate dielectric layer on the semiconductor substrate in the first active region having the first gate trench before forming the first gate layer.
13. The method of claim 7, further comprising:
forming a second gate dielectric layer on the semiconductor substrate in the second active region having the second gate trench before forming the second gate layer.
14. The method of claim 7, further comprising:
forming a third active region in the semiconductor substrate;
forming a third gate layer on the third active region of the semiconductor substrate while the first and second gate layers are formed; and
implanting ions in the third gate layer and in the third active region on both sides of the third gate layer such that (1) the third gate layer becomes a third gate electrode and (2) third impurity regions are formed on both sides of the third gate electrode.
15. The method of claim 14, further comprising:
forming a third gate dielectric layer on the semiconductor substrate in the third active region before forming the third gate layer.
16. The method of claim 14, before implanting the ions, the method further comprising:
forming a spacer insulating layer on the entire surface of the semiconductor substrate having the third gate layer; and
forming a third spacer on sidewalls of the third gate layer by removing at least a portion of the spacer insulating layer.
17. The method of claim 14, further comprising:
forming an isolation region in the semiconductor substrate to define the first, second and third active regions before forming the first and second gate trenches.
18. The method of claim 14, further comprising:
forming a first ion implantation mask configured to cover the second and third active regions and expose the first active region; and
implanting first impurities into the first active region using the first ion implantation mask as a photoresist.
19. The method of claim 14, further comprising:
forming a second ion implantation mask configured to cover the first active region and expose the second and third active regions; and
implanting second impurities into the second and third active regions using the second ion implantation mask as a photoresist.
20. The method of claim 1, wherein the semiconductor substrate is made of silicon.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. Method of controlling at least one wind turbine blade during a stopping process of a rotor in a wind turbine system, said method comprising:
optimizing blade control velocity of said blades at least toward a position of no-acceleration force applied to the rotor in response to one or more feedback values of the system andor the surroundings of the system, and
controlling pitch angles of said at least one wind turbine blade in relation to a cyclic or a similar non-linear curve during every rotation of the rotor.
2. Method according to claim 1, where said controlling includes regulating of the pitch angle of one or more pitch or active stall wind turbine blades from a value at an initiating of the stopping process to a value of said no-acceleration position.
3. Method according to claim 1, where regulating of a teeter angle of a rotor teeter mechanism is used in obtaining the no-acceleration of said at least one wind turbine blade.
4. Method according to claim 1, where the pitch angles of said at least one wind turbine blade are controlled individually during every rotation of the rotor in order to obtain a substantially common force on the rotor.
5. Method according to claim 1, where said controlling includes a closed loop configuration with said feedback values established by measuring mechanical or physical data of the wind turbine system andor the surroundings of the system.
6. Method according to claim 5, where said one or more feedback values result in control values for controlling said at least one wind turbine blade within control limit values.
7. Method according to claim 1, where a pitch velocity is controlled in relation to a non-linear curve with a higher initial slope.
8. Method according to claim 7, where the controlling of the pitch velocity comprises a high initial transient from 0 to circa 15 degreessec in the first few seconds.
9. Method according to claim 1, where the pitch angles of said at least one wind turbine blade are controlled in relation to a cyclic or a similar non-linear curve during every rotation of the rotor in relation to wind speed in different sections of the swept area.
10. Control system for controlling at least one wind turbine blade during a stopping process of a rotor in a wind turbine system, wherein the control system comprises:
sensor means to measure one or more values of the system andor the surroundings of the system,
computing means to establish one or more feedback values of said measured values, and
control means to control said at least one wind turbine blade wherein said means optimizes a blade control velocity of said blades at least toward a position of no-acceleration force applied to the rotor in response to said one or more feedback values, and wherein said means controls pitch angles of said at least one wind turbine blade in relation to a cyclic or a similar non-linear curve during every rotation of the rotor.
11. Control system according to claim 10, wherein said control means comprises means and algorithms for controlling the pitch from the initiating value of the stopping process to a value of said no-acceleration position.
12. Control system according to claim 10, wherein said control means comprises a teeter mechanism that is used in obtaining the no-acceleration of said at least one wind turbine blade.
13. Control system according to claim 10, wherein said sensor means include pitch position sensors, blade load sensors, azimuth sensors, wind sensors, andor teeter angle sensors for measuring mechanical or physical data of the wind turbine system andor the surroundings of the system.
14. Control system according to claim 10, wherein said system includes a closed loop configuration in order to establish said one or more feedback values.
15. Control system according to claim 10, wherein said control means comprises means for controlling the pitch velocity in relation to a non-linear curve with a higher initial slope.
16. Control system according to claim 10, wherein said control means comprises means for controlling the pitch velocity with a high initial transient from 0 to circa 15 degreessec in the first few seconds.
17. Control system according to claim 10, wherein said system controls said at least one wind turbine blade within control limit values.
18. Control system according to claim 17, wherein said computing means includes microprocessor and computer storage means for pitch algorithms and pre-established values of said control limit values.
19. Control system according to claim 10, wherein pitch algorithms control the pitch angles of said at least one wind turbine blade individually during every rotation of the rotor in order to obtain a substantially common force on the rotor.
20. Control system according to claim 19, wherein pitch algorithms control the pitch angles of said at least one wind turbine blade in relation to a cyclic or a similar non-linear curve during every rotation of the rotor.
21. Wind turbine with at least one pitch or active stall wind turbine blade in a rotor and a control system according to claim 10 for controlling a pitch actuator system and pitch angle of said at least one wind turbine blade in response to one or more feedback values of the wind turbine andor the surroundings of the wind turbine during a stopping process.
22. Wind turbine according to claim 21, wherein said at least one wind turbine blade is part of a wind turbine with two or three blades.
23. Wind turbine according to claim 21 wherein said pitch actuator system includes electric motors controlling the pitch angle of said at least one wind turbine blade.
24. Wind turbine according to claim 21, wherein said wind turbine comprises a rotor teeter mechanism.
25. Wind turbine according to claim 21, wherein said pitch actuator system controls the pitch angles of said at least one wind turbine blades individually during every rotation of the rotor in order to obtain a substantially common force on the rotor.
26. Wind turbine according to claim 21, wherein said pitch actuator system controls the pitch angles of said at least one wind turbine blade in relation to a cyclic or non-linear curve during every rotation of the rotor.
27.-28. (canceled)