1. A method of conducting flow through microwave assisted chemistry comprising:
directing a flow of fluid between a reservoir and a reaction vessel;
exposing a portion of the flowing fluid to microwave radiation to thereby initiate or accelerate chemical reactions in the fluid;
measuring the pressure of the flowing fluid between the reservoir and the reaction vessel; and
conditionally reversing the flow of fluid based upon the measured fluid pressure.
2. A method according to claim 1 comprising directing the flow of fluid from the reservoir to the reaction vessel and reversing the flow of fluid when the pressure increases beyond an upper set point pressure.
3. A method according to claim 1 comprising directing the flow of fluid from the reservoir to the reaction vessel and reversing the flow of fluid when the pressure decreases below a desired set point pressure.
4. A method according to claim 1 comprising directing the flow of fluid from the reaction vessel to the reservoir and reversing the flow of fluid when the pressure increases beyond an upper set point pressure.
5. A method according to claim 1 comprising directing the flow of fluid from the reaction vessel to the reservoir and reversing the flow of fluid when the pressure decreases below a desired set point pressure.
6. A method according to claim 1 wherein the step of conditionally reversing the flow of fluid comprises signaling a processor based upon the measured pressure and reversing a pump based upon a signal from the processor.
7. A method according to claim 1 wherein the step of conditionally reversing the flow of fluid comprises adding additional fluid as the flow is reversed.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. Manufacturing method of a membraneless piezoelectricelectrostrictive microactator comprising the steps of:
providing a chamber plate;
forming a chamber in said chamber plate;
forming a piezoelectricelectrostrictive film separately;
forming a lower electrode under said piezoelectricelectrostrictive film;
bonding said chamber plate and said lower electrode using a bonding layer; and
forming an upper electrode on said piezoelectricelectrostrictive film.
2. The method in claim 1 further comprising the step of etching said piezoelectricelectrostrictive film in a desired pattern before forming said upper electrode.
3. The method in claim 1, wherein said chamber plate is made of metal.
4. The method in claim 3, wherein said metal is stainless steel or nickel.
5. The method in claim 3, wherein the method for forming said chamber in said chamber plate is a punching method, or a full etching method through wet etching.
6. The method in claim 1, wherein said chamber plate is made of ceramic.
7. The method in claim 6, wherein said ceramic is metal oxide or silicon.
8. The method in claim 1, wherein said chamber plate is made of engineering plastic.
9. The method in claim 6, wherein the method said chamber in said chamber plate is punching method.
10. The method in claim 8, wherein the method said chamber in said chamber plate is punching method.
11. The method in claim 1, wherein said bonding layer is formed on said chamber plate.
12. The method in claim 1, wherein said bonding layer is formed under said lower electrode.
13. The method in claim 12 further comprising the step of removing said bonding layer which is exposed after bonding.
14. The method in claim 1, wherein the material of said bonding layer is conductive adhesive.
15. The method in claim 14, wherein said conductive adhesive is silver paste or conductive resin such as conductive epoxy or polymers.
16. The method in claim 1, wherein said bonding layer is formed 1-30 m thick.
17. The method in claim 16, wherein said bonding layer is formed 1-10 m thick.
18. The method in claim 1, wherein the material of said piezoelectricelectrostrictive film is piezoelectricelectrostrictive ceramic, polyvinylidene fluoride, or a mixture of said piezoelectricelectrostrictive ceramic and polyvinylidene fluoride.
19. The method in claim 1, wherein piezoelectricelectrostrictive film is formed 15-300 m thick.
20. The method in claim 1, wherein said lower electrode is formed 1-5 m thick.
21. Membraneless piezoelectricelectrostrictive microactuator comprising:
a chamber;
a chamber plate in which said chamber is formed;
a lower electrode formed on said chamber plate and covering said chamber;
a bonding layer formed between said chamber plate and said lower electrode and bonding said chamber plate and said lower electrode;
a piezoelectricelectrostrictive film formed on said lower electrode and vibrating when electrified; and
an upper electrode formed on said piezoelectricelectrostrictive film.
22. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said chamber plate is made of metal.
23. Membraneless piezoelectricelectrostrictive microactuator claim 22, wherein said metal is stainless steel or nickel.
24. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said chamber plate is made of ceramic.
25. Membraneless piezoelectricelectrostrictive microactuator in claim 24, wherein said ceramic is metal oxide or silicon.
26. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said chamber plate is made of engineering plastic.
27. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said boding layer is made of conductive adhesive.
28. Membraneless piezoelectricelectrostrictive microactuator in claim 27, wherein said conductive adhesive is silver paste, or conductive resin such as conductive epoxy or polymers.
29. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said bonding layer is 1-30 m thick.
30. Membraneless piezoelectricelectrostrictive microactuator in claim 29, wherein said bonding layer is 1-10 m thick.
31. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein the material of said piezoelectricelectrostrictive film is piezoelectricelectrostrictive ceramic, polyvinylidene fluoride, or a mixture of substance of said piezoelectricelectrostrictive ceramic and polyvinylidene fluoride.
32. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said piezoelectricelectrostrictive film is 15-300 m thick.
33. Membraneless piezoelectricelectrostrictive microactuator in claim 21, wherein said lower electrode is 1-5 m thick.