1. A memory device comprising:
a memory array;
a temporary storage area; and
circuitry operative to:
store, in the temporary storage area: (i) first data to be stored in row N in the memory array, (ii) second data, if any, stored in row N\u22121 in the memory array, and (iii) third data, if any, stored in row N+1 in the memory array;
write the first data in row N in the memory array; and
in response to an error in writing the first data in row N in the memory array:
write the first data, the second data, if any, and the third data, if any, in respective rows in a repair area in the memory device; and
add addresses of rows N\u22121, N, and N+1 to a table stored in the memory device, wherein the table indicates which rows in the repair area should be used instead of rows N\u22121, N, and N+1.
2. The memory device of claim 1, wherein the circuitry is operative to write the first data, the second data, if any, and the third data, if any, in respective rows in the repair area such that there are intervening blank rows between the respective rows.
3. The memory device of claim 1, wherein the circuitry operative to add the addresses of rows N\u22121, N, and N+1 to the table such that there are intervening blank rows between the addresses in the table.
4. The memory device of claim 1, wherein the circuitry is further operative to:
receive a command to perform one of a read or a write operation to an address of one of rows N\u22121, N, and N+1;
compare the address to addresses listed in the table; and
determine which address in the repair area should be used for said one of a read or a write operation instead of the address of said one of rows N\u22121, N, and N+1.
5. The memory device of claim 1, wherein third data is not stored in row N+1 in the memory array, and wherein the circuitry is further operative to:
store, in the temporary storage area of the memory device, third data to be stored in row N+1 in the memory array; and
in response to the error in writing the first data in row N in the memory array, write the third data in a row in the repair area in the memory device.
6. The memory device of claim 1, wherein a row stores two pages of data, wherein the first data comprises a first page of data, wherein row N stores a second page of data, and wherein the circuitry is further operative to:
store, in the temporary storage area, the second page of data; and
in response to the error in writing the first data in row N in the memory array, write the second page of data in a same repair row in the repair area as the first data.
7. The memory device of claim 1 further comprising a controller in communication with the memory array, wherein the temporary storage area and the circuitry are part of the controller.
8. The memory device of claim 1, wherein the memory array comprises a three-dimensional memory array comprising a plurality of memory cell layers stacked vertically above one another above a single silicon substrate.
9. A memory device comprising:
a memory array;
a temporary storage area; and
circuitry operative to:
receive an address of row N in the memory array;
determine whether the address of row N is present in a table stored in the memory device;
if the address of row N is present in the table, remap the address to an address in a repair area of the memory device;
if the address of row N is not present in the table:
store, in the temporary storage area: (i) first data to be stored in row N in the memory array (ii) second data, if any, stored in row N\u22121 in the memory array, and (iii) third data, if any, stored in row N+1 in the memory array;
write the first data in row N in the memory array; and
in response to an error in writing the first data in row N in the memory array:
write the first data, the second data, if any, and the third data, if any, in respective rows in a repair area in the memory device; and
add addresses of rows N\u22121, N, and N+1 to the table,
wherein the table indicates which rows in the repair area should be used instead of rows N\u22121, N, and N+1.
10. The memory device of claim 9, wherein the circuitry is operative to write the first data, the second data, if any, and the third data, if any, in respective rows in the repair area such that there are intervening blank rows between the respective rows.
11. The memory device of claim 9, wherein the circuitry is operative to add the addresses of rows N\u22121, N, and N+1 to the table such that there are intervening blank rows between the addresses in the table.
12. The memory device of claim 9, wherein the circuitry is further operative to remap the address of the repair area to a new address in the repair area if the address of the repair area is also present in the table.
13. The memory device of claim 9, wherein the circuitry is further operative to add an address of the row of the repair area to the table and write the data of the row to another row in the repair area if there is an error in writing the data of the row to the repair area.
14. The memory device of claim 9, wherein the circuitry is further operative to:
receive a command to perform one of a read or a write operation to an address of one of rows N\u22121, N, and N+1;
compare the address to addresses listed in the table; and
determine which address in the repair area should be used for said one of a read or a write operation instead of the address of said one of rows N\u22121, N, and N+1.
15. The memory device of claim 9, wherein third data is not stored in row N+1 in the memory array, and wherein the circuitry is further operative to:
store, in the temporary storage area of the memory device, third data to be stored in row N+1 in the memory array; and
in response to the error in writing the first data in row N in the memory array, write the third data in a row in the repair area in the memory device.
16. The memory device of claim 9, wherein a row stores two pages of data, wherein the first data comprises a first page of data, wherein row N stores a second page of data, and wherein the circuitry is further operative to:
store, in the temporary storage area, the second page of data; and
in response to the error in writing the first data in row N in the memory array, write the second page of data in a same repair row in the repair area as the first data.
17. The memory device of claim 9 further comprising a controller in communication with the memory array, wherein the temporary storage area and the circuitry are part of the controller.
18. The memory device of claim 9, wherein the memory array comprises a three-dimensional memory array comprising a plurality of memory cell layers stacked vertically above one another above a single silicon substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system for recovering carbon dioxide in an exhaust gas, comprising:
an absorption device which is provided with an exhaust gas introduction port, an alkaline solution introduction port, a remaining exhaust gas discharge port and an alkaline solution discharge port and causes gas-liquid contact between an exhaust gas introduced from the exhaust gas introduction port and an alkaline solution introduced from the alkaline solution introduction port to absorb carbon dioxide contained in the exhaust gas by the alkaline solution;
a regeneration device which is provided with an alkaline solution spurt port, a regenerated alkaline solution discharge port and a carbon dioxide discharge port and discharges carbon dioxide from the alkaline solution having absorbed the carbon dioxide to regenerate the alkaline solution;
a first alkaline solution reflux line which refluxes the alkaline solution being discharged from the alkaline solution discharge port of the absorption device to the alkaline solution introduction port;
a second alkaline solution reflux line which refluxes the regenerated alkaline solution being discharged from the regenerated alkaline solution discharge port of the regeneration device to the alkaline solution spurt port; and
a storage tank which is comprised of a plurality of split tanks capable of intervening in either the first alkaline solution reflux line or the second alkaline solution reflux line by switching the alkaline solution reflux lines.
2. The system for recovering carbon dioxide in an exhaust gas according to claim 1, wherein a main solute of the alkaline solution is sodium carbonate, potassium carbonate or amine.
3. A method for recovering carbon dioxide in an exhaust gas, comprising:
a first absorption step which refluxes a first alkaline solution being discharged from an alkaline solution discharge port of an absorption device to an alkaline solution introduction port of the absorption device through a first split tank among a plurality of split tanks configuring a storage tank to cause gas-liquid contact between the exhaust gas and the first alkaline solution to repeatedly absorb carbon dioxide contained in the exhaust gas by the first alkaline solution; and
a first regeneration step which switches a reflux line of the first alkaline solution to introduce the first alkaline solution having absorbed the carbon dioxide in the first absorption step to an alkaline solution spurt port of a regeneration device, refluxes the first alkaline solution being discharged from a regenerated alkaline solution discharge port of the regeneration device to the alkaline solution spurt port through the first split tank, and discharges repeatedly the carbon dioxide into the regeneration device to regenerate the carbon dioxide absorption capacity of the first alkaline solution.
4. The method for recovering carbon dioxide in an exhaust gas according to claim 3, further comprising:
a second absorption step which guides a second alkaline solution stored in a second split tank of the storage tank to the alkaline solution introduction port of the absorption device when the first regeneration step is being performed, refluxes the second alkaline solution being discharged from the alkaline solution discharge port of the absorption device to the alkaline solution introduction port through the second split tank and causes gas-liquid contact between the exhaust gas and the second alkaline solution to repeatedly absorb the carbon dioxide contained in the exhaust gas by the second alkaline solution.
5. The method for recovering carbon dioxide in an exhaust gas according to claim 4, further comprising:
a second regeneration step which switches the reflux line of the alkaline solution to introduce the second alkaline solution having absorbed the carbon dioxide in the second absorption step to the alkaline solution spurt port of the regeneration device, refluxes the second alkaline solution being discharged from the regenerated alkaline solution discharge port of the regeneration device to the alkaline solution spurt port through the second split tank, and discharges repeatedly the carbon dioxide into the regeneration device to regenerate the carbon dioxide absorption capacity of the second alkaline solution; and
a third absorption step which switches a reflux line at the same time when the reflux line is switched in the second regeneration step, guides the first alkaline solution regenerated in the first regeneration step to the alkaline solution introduction port of the absorption device, refluxes the first alkaline solution being discharged from the alkaline solution discharge port of the absorption device to the alkaline solution introduction port through the first split tank, and causes gas-liquid contact between the exhaust gas and the first alkaline solution to repeatedly absorb the carbon dioxide contained in the exhaust gas by the first alkaline solution.
6. A system for recovering carbon dioxide in an exhaust gas, comprising:
an absorption device which is provided with an exhaust gas introduction port, an alkaline solution introduction port, a remaining exhaust gas discharge port and an alkaline solution discharge port, and causes gas-liquid contact between the introduced exhaust gas and an alkaline solution to absorb carbon dioxide contained in the exhaust gas by the alkaline solution to produce a reaction product insoluble compound;
an alkaline solution reflux line which refluxes the alkaline solution being discharged from the alkaline solution discharge port of the absorption device to the alkaline solution introduction port; and
a collection tank which is intervened in the alkaline solution reflux line or connected by a pipe branched from the alkaline solution reflux line to collect an insoluble compound contained in the alkaline solution.
7. The system for recovering carbon dioxide in an exhaust gas according to claim 6, wherein the alkaline solution is produced by dissolving sodium carbonate into water, and the sodium carbonate dissolved in the alkaline solution has a weight concentration of 9 to 22%.
8. The system for recovering carbon dioxide in an exhaust gas according to claim 6, further comprising:
a regeneration device to which the insoluble compound is supplied and which heats the insoluble compound to discharge carbon dioxide, thereby regenerating an alkali material, which configures the alkaline solution, from the insoluble compound.
9. A method for recovering carbon dioxide in an exhaust gas, comprising:
an absorption step which causes gas-liquid contact between the exhaust gas and an alkaline solution and absorbs the carbon dioxide contained in the exhaust gas by the alkaline solution to generate a reaction product insoluble compound;
a circulation step which causes repeatedly gas-liquid contact between the alkaline solution and the exhaust gas; and
a collection step which collects the insoluble compound contained in the alkaline solution.
10. The method for recovering carbon dioxide in an exhaust gas according to claim 9, further comprising:
a regeneration step which heats the insoluble compound collected in the collection step to discharge the carbon dioxide and regenerates an alkali material, which configures the alkaline solution, from the insoluble compound.
11. The method for recovering carbon dioxide in an exhaust gas according to claim 10, wherein the absorption step, the collection step, the circulation step and the regeneration step are repeated sequentially.