1. A radiation-emitting semiconductor chip, comprising:
a semiconductor body having a semiconductor layer sequence comprising an active region for generating radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;
a carrier comprising a major surface facing the semiconductor body;
a first contact;
a second contact; and
a protection diode formed in a current path extending between the first contact and the second contact through the carrier, the protection diode being a Schottky diode formed between the first contact and the carrier;
wherein the first semiconductor layer is arranged on a side of the active region facing the major surface of the carrier and is electrically contactable by the first contact; and
wherein the second semiconductor layer is electrically contactable by the second contact.
2. The semiconductor chip according to claim 1, wherein the protection diode is embodied as a metal-semiconductor junction, and wherein the major surface forms the metal-semiconductor junction.
3. The semiconductor chip according to claim 1, wherein the semiconductor body is cohesively connected to the carrier.
4. The semiconductor chip according to claim 1, wherein the first contact is arranged on the major surface of the carrier.
5. The semiconductor chip according to claim 1, wherein the first contact and the second contact are arranged on opposing sides of the carrier.
6. The semiconductor chip according to claim 1, wherein a first connection layer is arranged between the semiconductor body and the carrier; and wherein the first semiconductor layer is connected electrically conductively with the first connection layer.
7. The semiconductor chip according to claim 6, wherein the first connection layer comprises an injection layer and a transition layer, the injection layer adjoining the semiconductor body and the transition layer adjoining the carrier.
8. The semiconductor chip according to claim 7, wherein the protection diode is formed by the transition layer.
9. The semiconductor chip according to claim 1, wherein the semiconductor body comprises at least one recess extending through the active region and provided for electrical contacting the second semiconductor layer.
10. A radiation-emitting semiconductor chip, comprising:
a semiconductor body having a semiconductor layer sequence comprising an active region for generating radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;
a carrier comprising a major surface facing the semiconductor body;
a first contact;
a second contact; and
a protection diode formed in a current path extending between the first contact and the second contact through the carrier;
wherein the first semiconductor layer is arranged on a side of the active region facing the major surface of the carrier and is electrically contactable by the first contact;
wherein the second semiconductor layer is electrically contactable by the second contact; and
wherein the semiconductor body comprises at least one recess extending through the active region and provided for electrical contacting the second semiconductor layer.
11. The semiconductor chip according to claim 10, wherein the second semiconductor layer is connected electrically conductively to a second connection layer; and wherein the second connection layer extends through the recess.
12. The semiconductor chip according to claim 11, wherein a first connection layer is arranged between the semiconductor body and the carrier;
wherein the first semiconductor layer is connected electrically conductively with the first connection layer; and
wherein the second connection layer is formed in places between the first connection layer and the carrier.
13. The semiconductor chip according to claim 1, wherein the protection diode overlaps with the first contact when the semiconductor chip is viewed in plan view.
14. The semiconductor chip according to claim 1, wherein the carrier contains a semiconductor material.
15. The semiconductor chip according to claim 1, wherein a growth substrate for the semiconductor layer sequence of the semiconductor body has been removed.
16. A radiation-emitting semiconductor chip, comprising:
a semiconductor body having a semiconductor layer sequence comprising an active region for generating radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;
a carrier comprising a major surface facing the semiconductor body;
a first contact;
a second contact; and
a protection diode formed in a current path extending between the first contact and the second contact through the carrier;
wherein the first semiconductor layer is arranged on a side of the active region facing the major surface of the carrier and is electrically contactable by the first contact;
wherein the second semiconductor layer is electrically contactable by the second contact; and
wherein the first contact is arranged on the major surface of the carrier.
17. A radiation-emitting semiconductor chip, comprising:
a semiconductor body having a semiconductor layer sequence comprising an active region for generating radiation, said active region being arranged between a first semiconductor layer and a second semiconductor layer;
a carrier comprising a major surface facing the semiconductor body;
a first contact;
a second contact; and
a protection diode formed in a current path extending between the first contact and the second contact through the carrier;
wherein the first semiconductor layer is arranged on a side of the active region facing the major surface of the carrier and is electrically contactable by the first contact;
wherein the second semiconductor layer is electrically contactable by the second contact;
wherein a first connection layer is arranged between the semiconductor body and the carrier;
wherein the first semiconductor layer is connected electrically conductively with the first connection layer;
wherein the first connection layer comprises an injection layer and a transition layer, the injection layer adjoining the semiconductor body and the transition layer adjoining the carrier; and
wherein the protection diode is formed by the transition layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A receiving device for receiving an overlaid receiving signal corresponding to a superposition of a first and a second transmitting signals, respectively, transmitted by a first transmitter and a second transmitter arranged remote from the first transmitter, wherein the first and the second transmitting signals lie in the same frequency band, wherein the first transmitting signal is generated, using a first transmitting subgroup of code units, wherein the second transmitting signal is generated using a second transmitting subgroup of code units, wherein the first transmitting subgroup of code units and the second transmitting subgroup of code units together represent a plurality of code units which were generated by a redundancy-adding encoding from an information word with a plurality of information units, comprising:
a sampler for sampling the overlaid receiving signal synchronously to the first transmitter in order to obtain a first receiving signal associated with the transmitted first transmitting signal, and for sampling the overlaid receiving signal synchronously to the second transmitter in order to obtain a second receiving signal associated with the transmitted second transmitting signal;
a decoder for decoding the first and the second receiving signal in order to obtain a first receiving subgroup of code units associated with the first transmitting subgroup of code units, and to decode the first and the second receiving signal in order to obtain a second receiving subgroup of code units associated with the second transmitting subgroup of code units;
a calculator for calculating a first interference signal using the second receiving subgroup of code units and a second interference signal using the first receiving subgroup of code units;
an interference reducer for combining the first interference signal with the first receiving signal and for combining the second interference signal with the second receiving signal in order to obtain an improved first receiving signal and an improved second receiving signal; and
a controller for controlling the decoder so that the decoder decodes the improved first receiving signal and the improved second receiving signal and outputs the information word with the plurality of information units based on the improved first receiving signal and the improved second receiving signal.
2. The receiving device according to claim 1,
wherein the controller is implemented in order to control the interference reducer and the calculator so that the calculator calculates a further improved first and second information signal using the improved first receiving signal and the improved second receiving signal by means of one or several iteration steps, and in order to control the decoder in order to obtain the information word with the plurality of information unite using the further improved first receiving and the further improved second receiving signal.
3. The receiving device according to claim 1, wherein the decoder comprises:
a mapper for converting the first receiving signal or the second receiving signal into pre-decoding probabilities for the first receiving subgroup of code units and for the second receiving subgroup of code units;
a soft-in-soft-out decoder for calculating a post-decoding probability for the first and the second receiving subgroup of code units; and
an estimator for estimating the first and the second receiving subgroups on the basis of the post-decoding probability for the first and the second receiving subgroup of code units.
4. The receiving device according to claim 3, wherein the soft-in-soft-out decoder is a BCJR decoder (BCJR=Bahl Cocke Jelinek Raviv).
5. The receiving device according to claim 3,
wherein an interleaving function is present when generating the first and the second transmitting signal, and
wherein the decoder further comprises:
a de-interleaver for cancelling the interleaving function for the first or the second transmitting signal, wherein the de-interleaver is connected between the mapper and the decoder; and
an interleaver which is implemented in order to perform the same inter leaving function, wherein the interleaver is arranged between the decoder and the estimator.
6. The receiving device according to claim 3,
wherein the mapper is implemented in order to operate using page information from a preceding iteration step, and
wherein the page information is extrinsic probabilities derived from the post-decoding probabilities.
7. The receiving device according to claim 6,
wherein the sampler is implemented in order to be synchronized using a predetermined training sequence from the first transmitter and a predetermined training sequence from the second transmitter.
8. The receiving device according to claim 3,
wherein the calculator further comprises:
weighting unit for weighting the second receiving subgroup of code units or a modulation symbol with a channel characteristic derived from the second receiving subgroup of code units, in order to obtain a weighted second receiving subgroup or a weighted modulation symbol;
a second unit for weighting the first receiving subgroup of code units or a modulation symbol with a channel characteristic derived from the first receiving subgroup, in order to obtain a weighted first receiving subgroup or a weighted modulation symbol.
9. A receiving device according to claim 3,
wherein the mapper is a QPSK demapper (QPSK=Quaternary Phase Shift Keying), and
wherein the estimator is an MMSE estimator (MMSE=Minimum Mean Squared Error).
10. A method for receiving an overlaid receiving signal corresponding to an overlay of a transmitted first and second transmitting signals, respectively, by a first transmitter and by a second transmitter which is arranged remote from the first transmitter, wherein the first and the second transmitting signals lie in the same frequency band, wherein the first transmitting signal is generated using a first transmitting subgroup of code units, wherein the second transmitting signal is generated using a second transmitting subgroup of code units, wherein the first transmitting subgroup of code units and the second transmitting subgroup of code units together represent a plurality of code units which were generated by a redundancy-adding encoding from an information word with a plurality of information units, comprising:
sampling the overlaid receiving signal synchronously to the first transmitter in order to obtain a first receiving signal associated with the transmitted first transmitting signal;
sampling the overlaid receiving signal synchronously to the second transmitter in order to obtain a second receiving signal associated with the transmitted second transmitting signal;
decoding the first and the second receiving signal in order to obtain a first receiving subgroup of code units associated with the first transmitting subgroup of code units;
decoding the first and the second receiving signal in order to obtain a second receiving subgroup of code units associated with the second transmitting subgroup of code units;
calculating a first interference signal using the second receiving subgroup of code units and a second interference signal using the first receiving subgroup of code units;
combining the first interference signal with the first receiving signal and combining the second interference signal with the second receiving signal in order to obtain an improved first receiving signal and an improved second receiving signal in order to obtain an interference reduction; and
decoding the improved first receiving signal and the improved second receiving signal and outputting the information word of the plurality of information units based on the improved first receiving signal and the improved second receiving signal.