1. A method for forming a composite extrusion for a trim seal strip comprising:
extruding a body composed of ethylene-propylene diene rubber compound and having a surface;
extruding a layer onto said surface composed of a polymer blend comprising an acrylate polymer and a glycidyl acrylate polymer; and
curing said layer to form a veneer bonded to the body, wherein said curing includes reacting said acrylate polymer and said glycidyl acrylate polymer and the acrylate polymer and the glycidyl acrylate polymer form a reaction product having an affinity for ethylene-propylene diene rubber compound and forming an interfacial barrier effective to inhibit migration of polar agents from said body into said veneer.
2. The method of claim 1 wherein said surface comprises diene groups and wherein said curing includes reacting a portion of said glycidyl acrylate polymer and said diene groups.
3. The method of claim 1 wherein the layer contains a coloring agent.
4. The method of claim 1 wherein the glycidyl acrylate polymer is an ethylene glycidyl acrylate polymer.
5. The method of claim 1 wherein the glycidyl acrylate polymer is ethylene methyl acrylate glycidyl methacrylate terpolymer.
6. A method for forming a composite extrusion comprising:
extruding a body having an external surface and composed of an ethylene-propylene diene precursor that includes diene groups and a vulcanizing agent;
extruding onto said external surface of said body a veneer composed predominantly of a polyolefin compound and comprising an acrylate-based polymer and an ethylene glycidyl acrylate polymer; and
curing said body and said veneer to vulcanize the ethylene-propylene diene precursor to form ethylene-propylene diene rubber compound, and concurrently to react said acrylate-based polymer and said ethylene glycidyl acrylate compound in said veneer, wherein the reaction between said acrylate-based polymer and said ethylene glycidyl acrylate polymer forms a reaction product that provides a compatabilized polar interfacial barrier adjacent said ethylene-propylene diene rubber compound effective to inhibit migration of residual vulcanizing agents into the veneer.
7. The method of claim 6 wherein a portion of said ethylene glycidyl acrylate polymer reacts with diene groups at a surface of said body to enhance adhesion of the veneer to the body.
8. The method of claim 6 wherein the glycidyl acrylate polymer is ethylene methyl acrylate glycidyl methacrylate terpolymer.
9. The method of claim 6 wherein the veneer comprises a coloring agent.
10. The method of claim 6 wherein the veneer is composed predominantly of a thermoplastic polyolefin.
11. The method of claim 10 wherein the thermoplastic polyolefin is a polyolefin elastomer.
12. A composite extrusion adapted for an automotive trim seal, said composite extrusion comprising:
a body having an external surface and composed of ethylene-propylene diene rubber compound; and
a co-extruded veneer applied to the external surface of the body and composed of a blend comprising predominantly polyolefinic compound and containing a reaction product of an acrylate polymer and an ethylene glycidyl acrylate polymer;
wherein the ethylene-propylene diene rubber compound contains a residual vulcanizing agent, and said reaction product provides a barrier effective to inhibit migration of the residual vulcanizing agent into the veneer.
13. The composite extrusion of claim 12 wherein the composite extrusion comprises an interface between the body and the veneer, and wherein the interface comprises a reaction product of a diene group of said ethylene-propylene diene rubber compound and said glycidyl acrylate polymer.
14. The composite extrusion of claim 12 wherein the veneer contains a coloring agent.
15. The composite extrusion of claim 12 wherein the ethylene glycidyl acrylate polymer is ethylene methyl acrylate glycidyl methacrylate terpolymer.
16. The composite extrusion of claim 12 wherein the polyolefin compound is a polyolefin elastomer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An ion implantation apparatus, wherein a traveling direction of an ion beam in a design is a Z direction, and two directions orthogonal to each other in a plane substantially orthogonal to the Z direction are an X direction and a Y direction, which irradiates a target with a ribbon-shaped ion beam having a width in the X direction larger than a width in the Y direction through scanning in the X direction or without scanning in the X direction, and comprises an ion beam deflector which deflects the ion beam in an energy state irradiating the target by a magnetic field or an electric field to separate the ion beam and a neutron from each other, the apparatus comprising:
an electric field lens, which comprises a plurality of electrodes opposed to each other in the Y direction with a space for passing the ion beam between the electrodes, is disposed on a downstream side of the ion beam deflector, and narrows the ion beam in the Y direction.
2. An ion implantation apparatus, wherein a traveling direction of an ion beam in a design is a Z direction, and two directions orthogonal to each other in a plane substantially orthogonal to the Z direction are an X direction and a Y direction, which irradiates a target with a ribbon-shaped ion beam having a width in the X direction larger than a width in the Y direction through scanning in the X direction or without scanning in the X direction, and comprises an ion beam deflector which deflects the ion beam in an energy state irradiating the target by a magnetic field or an electric field to separate the ion beam and a neutron from each other and a mask which is disposed between the ion beam deflector and the target and has an opening for passing the ion beam to form the ion beam, the apparatus comprising:
an electric field lens, which comprises a plurality of electrodes opposed to each other in the Y direction with a space for passing the ion beam between the electrodes, is disposed on a downstream side of the ion beam deflector and an upstream side of the mask, and narrows the ion beam in the Y direction.
3. The ion implantation apparatus according to claim 1, wherein the electric field lens has an inlet electrode, an intermediate electrode, and an outlet electrode, which the electrodes are separately arranged in the traveling direction of the ion beam,
each of the inlet electrode, the intermediate electrode, and the outlet electrode includes a pair of electrodes which are opposed to each other in the Y direction with a space for passing the ion beam between the electrodes and are substantially parallel to a plane of the ion beam, and the inlet electrode and the outlet electrode are electrically grounded, and
a direct-current voltage source applies a direct-current voltage to the intermediate electrode.
4. The ion implantation apparatus according to claim 1, wherein the electric field lens has an inlet electrode, an intermediate electrode, and an outlet electrode, which the electrodes are separately arranged in the traveling direction of the ion beam,
each of the inlet electrode, the intermediate electrode, and the outlet electrode includes a pair of electrodes which are opposed to each other in the Y direction with a space for passing the ion beam between the electrodes and are substantially parallel to a plane of the ion beam, and the inlet electrode and the outlet electrode are electrically grounded, and
a first direct-current voltage source and a second direct-current voltage source respectively apply direct-current voltages to the pair of electrodes of the intermediate electrode.
5. The ion implantation apparatus according to claim 1, further comprising:
a beam paralleling device which bends the ion beam scanned in the X direction into a parallel beam by the magnetic field or the electric field so as to be substantially parallel to a reference axis to bend the ribbon-shaped ion beam,
wherein the beam paralleling device serves also as the ion beam deflector, and the electric field lens is disposed in a vicinity of an outlet of the beam paralleling device.
6. The ion implantation apparatus according to claim 1, further comprising:
a plasma generating device which generates a plasma, supplies the plasma to a vicinity of the upstream side of the target, and suppresses a charge of a surface of the target by irradiating the ion beam,
wherein the electric field lens is disposed on the more upstream side than the plasma generating device.
7. A method of correcting a deviation angle of the ion beam in the ion implantation apparatus according to claim 1, the method comprising:
measuring a deviation angle from the Z direction in the Y-Z plane to a central orbit of the ion beam passing through the electric field lens, by a deviation angle measuring means; and
adjusting the direct-current voltage applied to the electrode of the electric field lens to decrease the measured deviation angle.
8. A method of correcting a deviation angle of the ion beam in the ion implantation apparatus according to claim 4, the method comprising:
measuring a deviation angle from the Z direction in the Y-Z plane to a central orbit of the ion beam passing through the electric field lens, by a deviation angle measuring means; and
adjusting at least one of the direct-current voltages applied from the first direct-current voltage source and the second direct-current voltage source to the pair of electrodes of the intermediate electrode of the electric field lens.
9. The method of correcting a deviation angle according to claim 7, wherein the measured deviation angle is to be substantially 0 degree.
10. The ion implantation apparatus according to claim 2, wherein the electric field lens has an inlet electrode, an intermediate electrode, and an outlet electrode, which the electrodes are separately arranged in the traveling direction of the ion beam,
each of the inlet electrode, the intermediate electrode, and the outlet electrode includes a pair of electrodes which are opposed to each other in the Y direction with a space for passing the ion beam between the electrodes and are substantially parallel to a plane of the ion beam, and the inlet electrode and the outlet electrode are electrically grounded, and
a direct-current voltage source applies a direct-current voltage to the intermediate electrode.
11. The ion implantation apparatus according to claim 2, wherein the electric field lens has an inlet electrode, an intermediate electrode, and an outlet electrode, which the electrodes are separately arranged in the traveling direction of the ion beam,
each of the inlet electrode, the intermediate electrode, and the outlet electrode includes a pair of electrodes which are opposed to each other in the Y direction with a space for passing the ion beam between the electrodes and are substantially parallel to a plane of the ion beam, and the inlet electrode and the outlet electrode are electrically grounded, and
a first direct-current voltage source and a second direct-current voltage source respectively apply direct-current voltages to the pair of electrodes of the intermediate electrode.
12. The ion implantation apparatus according to claim 2, further comprising:
a beam paralleling device which bends the ion beam scanned in the X direction into a parallel beam by the magnetic field or the electric field so as to be substantially parallel to a reference axis to bend the ribbon-shaped ion beam,
wherein the beam paralleling device serves also as the ion beam deflector, and the electric field lens is disposed in a vicinity of an outlet of the beam paralleling device.
13. The ion implantation apparatus according to claim 2, further comprising:
a plasma generating device which generates a plasma, supplies the plasma to a vicinity of the upstream side of the target, and suppresses a charge of a surface of the target by irradiating the ion beam,
wherein the electric field lens is disposed on the more upstream side than the plasma generating device.
14. A method of correcting a deviation angle of the ion beam in the ion implantation apparatus according to claim 2, the method comprising:
measuring a deviation angle from the Z direction in the Y-Z plane to a central orbit of the ion beam passing through the electric field lens, by a deviation angle measuring means; and
adjusting the direct-current voltage applied to the electrode of the electric field lens to decrease the measured deviation angle.
15. The method of correcting a deviation angle according to claim 8, wherein the measured deviation angle is to be substantially 0 degree.
16. A method of correcting a deviation angle of the ion beam in the ion implantation apparatus according to claim 12, the method comprising:
measuring a deviation angle from the Z direction in the Y-Z plane to a central orbit of the ion beam passing through the electric field lens, by a deviation angle measuring means; and
adjusting at least one of the direct-current voltages applied from the first direct-current voltage source and the second direct-current voltage source to the pair of electrodes of the intermediate electrode of the electric field lens.
17. The method of correcting a deviation angle according to claim 15, wherein the measured deviation angle is to be substantially 0 degree.
18. The method of correcting a deviation angle according to claim 16, wherein the measured deviation angle is to be substantially 0 degree.