1-7. (canceled)
8. A semiconductor device, comprising:
a plurality of first transistors formed in a first contact region of a substrate;
a plurality of second transistors formed in a second contact region of the substrate;
a first support body including a first horizontal portion and a plurality of first protrusions, wherein the first horizontal portion covers at least one each of the first and second transistors, and the first protrusions are coupled to the first horizontal portion and located between the plurality of first transistors;
a plurality of first conductive layers and a plurality of first insulating layers alternately stacked over the first support body and protruding upwardly along the sidewalls of the first protrusions;
a second support body including a second horizontal portion and a plurality of second protrusions, wherein the second horizontal portion covers the first conductive layers and the first insulating layers, formed in the first contact region, and the second protrusions are coupled to the second horizontal portion and located between the second transistors; and
a plurality of second conductive layers and a plurality of second insulating layers alternately stacked over the first conductive layers and the first insulating layers, formed in the second contact region, wherein the second conductive layers protrude upwardly along the sidewalls of the second protrusions.
9. The semiconductor device of claim 8, wherein the first and second protrusions are located at boundaries between neighboring memory blocks.
10. The semiconductor device of claim 8, further comprising:
first and second junctions of the first and second transistors;
a plurality of first lines coupled to the first junctions of the first or second transistors, respectively; and
a plurality of second lines coupling the first or second conductive layers to the second junctions of the first or second transistors, respectively.
11. The semiconductor device of claim 10, further comprising:
a plurality of first contact plugs passing through the first or second protrusions and coupling the first junctions of the first or second transistors to the plurality of first lines, respectively;
a plurality of second contact plugs passing through the first or second protrusions and coupling second junctions of the first or second transistors to the second lines to each other; and
a plurality of third contact plugs coupling the first or second conductive layers to the second lines, respectively.
12. The semiconductor device of claim 10, wherein the first and second lines are formed over the first and second conductive layers and the first and second insulating layers.
13. The semiconductor device of claim 10, wherein the first and second protrusions extend in a first direction, and the first and second lines extend in a second direction crossing the first direction.
14. The semiconductor device of claim 8, further comprising:
at least one trench formed in the top surface of one of the first or second protrusions and overlapping one of the first or second insulating layers;
at least one support pattern formed in the trench and coupled to one of the first or second insulating layers.
15-19. (canceled)
20. A method of manufacturing a semiconductor device, comprising the steps of:
forming a plurality of first transistors located in a first contact region of a substrate;
forming a first support body including a first horizontal portion and first protrusions, wherein the first horizontal portion covers at least one of the first transistors, and the first protrusions are coupled to the first horizontal portion and located between the first transistors;
alternately stacking a plurality of first conductive layers and a plurality of first insulating layers over the first support body and protruding upwardly along the sidewalls of the first protrusions,
forming a plurality of second transistors in a second contact region of the substrate before the forming the first support body;
forming a second support body including a second horizontal portion and a plurality of second protrusions, wherein the second horizontal portion covers the first conductive layers and the first insulating layers formed in the first contact region, and the second protrusions are coupled to the second horizontal portion and located between the second transistors; and
forming a plurality of second conductive layers and a plurality of second insulating layers alternately stacked over the first conductive layers and the first insulating layers, formed in the second contact region, wherein the second conductive layers protrude upwardly along the sidewalls of the plurality of second protrusions.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fuel cell system capable of measuring AC impedance in a fuel cell, comprising:
a power generation stabilizing device for keeping power generation in said fuel cell in a stable condition; and
an impedance measuring device for measuring said AC impedance when said power generation in said fuel cell is detected to be in the stable condition.
2. The fuel cell system according to claim 1, wherein said power generation stabilizing device maintains a power generation current of said fuel cell at a constant level.
3. The fuel cell system according to claim 1, wherein said power generation stabilizing device comprises:
a storage device electrically connected to said fuel cell; and
a power controlling device for controlling power transfer between said fuel cell and said storage device such that an output of said fuel cell is stabilized.
4. The fuel cell system according to claim 1, wherein said power generation stabilizing device comprises:
a storage device electrically connected to said fuel cell; and
a power controlling device for compensating for a power deficiency caused by stabilization of an output of said fuel cell through discharge from said storage device.
5. The fuel cell system according to claim 4, wherein said impedance measuring device stops measuring said AC impedance when said power deficiency exceeds a supplementary power provided through discharge from said storage device.
6. The fuel cell system according to claim 3, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.
7. The fuel cell system according to claim 1, wherein, when said fuel cell is in a low output operating mode, said AC impedance is measured after increasing a power generation amount of said fuel cell by a predetermined amount.
8. An AC impedance measuring method, comprising the steps of:
keeping power generation in a fuel cell in a stable condition; and
measuring said AC impedance after stabilizing the power generation in said fuel cell.
9. A fuel cell system comprising:
a fuel cell;
a power detection device for detecting an output power of said fuel cell;
an AC impedance measuring device for measuring AC impedance on the basis of said output power of said fuel cell;
a fuel gas supply device for supplying a fuel cell to said fuel cell;
an oxidizing gas supply device for supplying an oxidizing gas to said fuel cell;
a load device for consuming power from said fuel cell or a storage device; and
a control device for controlling the supply of said fuel gas and said oxidizing gas to said fuel cell and the operations of said load device,
wherein said control device keeps the supply of said fuel gas by said fuel gas supply device, the supply of said oxidizing gas by said oxidizing gas supply device, and the operations of said load device, in a stable condition,
detects the output power of said fuel cell using said power detection device, and
measures said AC impedance using said AC impedance measuring device when said detected output power is stable.
10. The fuel cell system according to claim 9, further comprising:
a storage device electrically connected to said fuel cell; and
a power control device for controlling power transfer between said fuel cell and said storage device,
wherein said control device is constituted to be capable of controlling power transferred tofrom said storage device, and
when said output power of said fuel cell is stable, said control device
(a) controls said power control device to charge a power surplus to said storage device when said output power of said fuel cell is excessive, and
(b) controls said power control device to cause said storage device to compensate for a power deficiency when said output power of said fuel cell is deficient.
11. The fuel cell system according to claim 2, wherein said power generation stabilizing device comprises:
a storage device electrically connected to said fuel cell; and
a power controlling device for controlling power transfer between said fuel cell and said storage device such that an output of said fuel cell is stabilized.
12. The fuel cell system according to claim 2, wherein said power generation stabilizing device comprises:
a storage device electrically connected to said fuel cell; and
a power controlling device for compensating for a power deficiency caused by stabilization of an output of said fuel cell through discharge from said storage device.
13. The fuel cell system according to claim 12, wherein said impedance measuring device stops measuring said AC impedance when said power deficiency exceeds a supplementary power provided through discharge from said storage device.
14. The fuel cell system according to claim 4, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.
15. The fuel cell system according to claim 5, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.
16. The fuel cell system according to claim 11, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.
16. The fuel cell system according to claim 12, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.
17. The fuel cell system according to claim 12, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.
18. The fuel cell system according to claim 13, wherein said impedance measuring device stops measuring said AC impedance when a power that can be charged todischarged from said storage device is limited.