1. A memory system comprising:
a semiconductor memory comprising a first memory block and a second memory block each including a plurality of nonvolatile memory cells each configured to hold i-bit data (where i is natural number greater than or equal to 2), data in the first memory block and data in the second memory block being each respectively erased at a time; and
a controller configured to access the semiconductor memory, wherein:
the controller is configured to write first data received from outside of the memory system in the first memory block such that the memory cells written with the first data in the first memory block respectively stores j-bit data (where j is natural number lower than i); and
the controller is configured to copy the first data in the first memory block to the second memory block such that the memory cells written with the first data in the second memory block respectively stores k-bit data (where k is natural number lower than i).
2. The system according to claim 1, wherein the memory cells written with the first data in the first memory block are assigned to i number of first pages,
the memory cells written with the first data in the second memory block are assigned to i number of second pages;
the controller is configured to write the first data in the first memory block using j number of first pages among the i number of first pages, and
the controller is configured to write the first data in the second memory block using k number of second pages among the i number of second pages.
3. The system according to claim 1, wherein the semiconductor memory further comprises a third memory block, and
the controller is configured to write second data received from outside of the memory system in the third memory block such that each of the memory cells in the third memory block stores i-bit data.
4. The system according to claim 3, wherein the memory cells written with the second data in the third memory block are assigned to i number pages, and
the controller is configured to write the second data in the third memory block using all of the i number of first pages.
5. The system according to claim 1, wherein the first data includes boot information, partition management information, and a file allocation table.
6. The system according to claim 4, wherein the third memory block includes a plurality of areas each including a plurality of the memory cells, and
the controller is configured to copy the second data in one of the areas to the first or second memory block in accordance with a frequency of the write access to each of the areas.
7. The system according to claim 6, wherein the controller includes:
a counter which counts the number of write accesses to each of the areas;
a threshold holding unit which has a threshold for a write access frequency;
a comparator which compares a count in the counter with the threshold held in the threshold holding unit; and
an instruction output section which, if the count corresponding to any of the areas exceeds the threshold, instructs the semiconductor memory to copy the data in the area to the first or second memory block.
8. The system according to claim 6, wherein the controller includes a table which holds information indicating the number of bits each held in the memory cells in the first, second, and third memory block.
9. The system according to claim 7, wherein the counter counts the number of the write accesses to the first or second memory block to which the data in the area is copied,
the comparator is configured to compare the number of the write accesses to the first or second memory block to which the data in the area is copied with the threshold; and
if the number of the write accesses is smaller than the threshold, the instruction output section instructs the semiconductor memory to write the data in the first or second memory block back to the third memory block.
10. The system according to claim 4, wherein the controller
writes data received from a host apparatus to the third memory block, and
writes management information of the data received from the host apparatus to the first memory block.
11. A memory system comprising:
a semiconductor memory comprising a first memory block and a second memory block each including a plurality of nonvolatile memory cells each configured to hold i-bit data (where i is natural number greater than or equal to 2), data in the first memory block and data in the second memory block being each respectively erased at a time; and
a controller configured to access the semiconductor memory, wherein:
the controller is configured to write first data received from outside of the memory system in the first memory block such that the memory cells written with the first data in the first memory block respectively stores j-bit data (where j is natural number lower than i);
the controller is configured to write second data received from outside of the memory system in the first memory block such that the memory cells written with the second data in the first memory block respectively stores j-bit data, the second data updating the first data written in the first memory block; and
the controller is configured to copy the second data in the first memory block to the second memory block such that the memory cells written with the second data in the second memory block respectively stores k-bit data (where k is natural number lower than i).
12. The system according to claim 11, wherein the memory cells in the first memory block comprises a first group of memory cells and a second group of memory cells different from the first group of memory cells,
the controller is configured to write the first data in the first group of the memory cells, and
the controller is configured to write the second data in the second group of memory cells.
13. The system according to claim 11, wherein the memory cells written with the first data in the first memory block are assigned to i number of first pages,
the memory cells written with the second data in the first memory block are assigned to i number of second pages;
the controller is configured to write the first and second data in the first memory block using j number of first pages among the i number of first pages, and
the controller is configured to write the second data in the second memory block using k number of second pages among the i number of second pages.
14. The system according to claim 11, wherein the semiconductor memory further comprises a third memory block, and
the controller is configured to write third data received from outside of the memory system in the third memory block such that each of the memory cells in the third memory block stores i-bit data.
15. The system according to claim 14, wherein the memory cells written with the third data in the third memory block are assigned to i number pages, and
the controller is configured to write the third data in the third memory block using all of the i number of first pages.
16. The system according to claim 11, wherein the first data and the second data include boot information, partition management information, and a file allocation table.
17. The system according to claim 15, wherein the third memory block includes a plurality of areas each including a plurality of the memory cells, and
the controller is configured to copy the third data in one of the areas to the first or second memory block in accordance with a frequency of the write access to each of the areas.
18. The system according to claim 17, wherein the controller includes:
a counter configured to count the number of write accesses to each of the areas;
a threshold holding unit which has a threshold for a write access frequency;
a comparator configured to compare a count in the counter with the threshold held in the threshold holding unit; and
an instruction output section configured to instruct the semiconductor memory to copy the data in the area to the first or second memory block if the count corresponding to any of the areas exceeds the threshold.
19. The system according to claim 17, wherein the controller includes a table which holds information indicating the number of bits each held in the memory cells in the first, second, and third memory block.
20. The system according to claim 15, wherein the controller is configured to write data received from a host apparatus to the third memory block, and
to write management information of the data received from the host apparatus to the first or second memory block.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for producing an optically active 1-alkyl-substituted 2,2,2-trifluoroethylamine represented by the formula 3,
wherein
R represents a lower alkyl group of a carbon number of 1 to 6, and
* represents an asymmetric carbon, or its salt by subjecting an optically active imine represented by the formula 1,
wherein
R represents a lower alkyl group of a carbon number of 1 to 6,
Ph represents a phenyl group,
a wavy line represents E configuration or Z configuration, and
* represents an asymmetric carbon, to an asymmetric reduction under hydrogen atmosphere using a metal catalyst of Group VIII to convert it into an optically active secondary amine represented by the formula 2,
wherein
R represents a lower alkyl group of a carbon number of 1 to 6,
Ph represents a phenyl group, and
* represents an asymmetric carbon, and then by subjecting the secondary amine or its salt to hydrogenolysis.
2. A production process according to claim 1, wherein the asymmetric reduction is conducted under a temperature condition of not higher than 10\xb0 C.
3. A production process according to claim 1, wherein R of the optically active imine represented by the formula 1, the optically active secondary amine represented by the formula 2 and the optically active 1-alkyl-substituted 2,2,2-trifluoroethylamine represented by the formula 3 is a methyl group.
4. A production process according to claim 1, wherein the optically active imine represented by the formula 1 is an optically active imine obtained by subjecting
a trifluoromethyl alkyl ketone represented by the formula 4
wherein
R represents a lower alkyl group of a carbon number of 1 to 6, and an optically active 1-phenylethylamine represented by the formula 5
wherein
Ph represents a phenyl group, and
* represents an asymmetric carbon, to dehydration and condensation in the presence of an acid catalyst.
5. A purification process characterized in that an optically active secondary amine represented by the formula 2
wherein
R represents a lower alkyl group of a carbon number of 1 to 6,
Ph represents a phenyl group, and
* represents an asymmetric carbon, is converted into its salt, followed by a recrystallization purification.
6. A purification process according to claim 5, wherein R of the optically active secondary amine represented by the formula 2 is a methyl group, and the salt is a, hydrobromide.
7. A purification process according to claim 5, wherein R of the optically active secondary amine represented by the formula 2 is a methyl group, and the salt is an optically active 10-camphorsulfonate.
8. A process for producing an optically active 1-alkyl-substituted 2,2,2-trifluoroethylamine represented by the formula 3 or its salt, according to claim 1, which is characterized in that, after an optically active secondary amine represented by the formula 2 is obtained by a production process according to claim 1, the secondary amine is purified by converting the secondary amine into its salt, followed by a recrystallization purification.
9. An optically active secondary amine represented by the formula 2
wherein
R represents a lower alkyl group of a carbon number of 1 to 6,
Ph represents a phenyl group, and
* represents an asymmetric carbon, or a salt thereof.
10. An optically active secondary amine according to claim 9, wherein R of the optically active secondary amine represented by the formula 2 is a methyl group.
11. A hydrobromide of the optically active secondary amine according to claim 9, wherein R of the optically active secondary amine represented by the formula 2 is a methyl group.
12. An optically active 1-camphorsulfonate of the optically active secondary amine according to claim 9, wherein R of the optically active secondary amine represented by the formula 2 is a methyl group.