1. A magnetic field generation apparatus, comprising:
two or more main magnetic pole portions configured to generate a main magnetic field;
one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; and
a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions.
2. The magnetic field generation apparatus according to claim 1, wherein:
the two or more main magnetic pole portions each include a plurality of second divisional magnets obtained by a division; and
the yoke portion includes two or more second yokes opposing the plurality of second divisional magnets in correspondence with the two or more main magnetic pole portions.
3. The magnetic field generation apparatus according to claim 2, further comprising
a generation portion that is a generation position of the main magnetic field,
wherein:
the two or more main magnetic pole portions include a first main magnetic pole portion having an N pole on the generation portion side and a second main magnetic pole portion having an S pole on the generation portion side;
the one or more secondary magnetic pole portions include a first secondary magnetic pole portion that is provided in the vicinity of the second main magnetic pole portion between the first main magnetic pole portion and the second main magnetic pole portion and has an N pole on the generation portion side and a second secondary magnetic pole portion that is provided in the vicinity of the first main magnetic pole portion between the first main magnetic pole portion and the second main magnetic pole portion and has an S pole on the generation portion side;
the one or more first yokes are provided between the plurality of first divisional magnets and the generation portion; and
the two or more second yokes are provided between the plurality of second divisional magnets and the generation portion.
4. The magnetic field generation apparatus according to claim 3, wherein:
the generation portion includes a generation surface whose side where a magnetic field is generated is a front surface and the other side is a back surface;
the first main magnetic pole portion is arranged annularly on the back surface side of an edge portion of the generation surface;
the second main magnetic pole portion is arranged linearly on the back surface side of a center portion of the generation surface;
the first secondary magnetic pole portion is arranged annularly while surrounding the second main magnetic pole portion; and
the second secondary magnetic pole portion is arranged linearly on an inner side of the first main magnetic pole portion.
5. The magnetic field generation apparatus according to claim 1, further comprising
a holding portion configured to movably hold the plurality of first divisional magnets.
6. A sputtering apparatus, comprising:
a vacuum chamber;
a substrate support portion provided inside the vacuum chamber;
a target opposing the substrate support portion;
a magnetic field generation portion including
two or more main magnetic pole portions that generate a main magnetic field on a front surface of the target,
one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field, and
a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions; and
a potential application portion configured to apply a negative potential to the target.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A transistor comprising:
an InSb alloy film formed on an oxide film formed on a monocrystalline silicon substrate;
a gate dielectric layer formed on said InSb alloy film wherein said gate dielectric is a high dielectric constant film;
a metal gate electrode formed on said gate dielectric layer; and
a source region and a drain region formed on opposite sides of said gate electrode adjacent to said InSb alloy film and on said oxide film, said source and drain regions formed from a metal film.
2. The transistor of claim 1 wherein said metal film is selected from a material which can form a Schottky barrier with said InSb alloy.
3. The transistor of claim 1 wherein said metal film is selected from the group consisting of titanium nitride, tantalum nitride and hafnium nitride.
4. A transistor comprising:
an InSb alloy film formed on an oxide film formed on a monocrystalline silicon substrate;
a gate dielectric layer formed on said InSb alloy film wherein said gate dielectric is a high dielectric constant film;
a metal gate electrode formed on said gate dielectric layer; and
a source region and a drain region formed on opposite sides of said gate electrode adjacent to said InSb alloy film and on said oxide film, said source and drain region formed from a semiconductor film having a wide bandgap.
5. The transistor of claim 4 wherein said semiconductor film is selected from the group consisting of InP, GaSb, GaP, and GaAs.
6. The transistor of claim 4 wherein said gate dielectric is selected from the group consisting of PZT, BST, tantalum pentaoxide, hafnium oxide, zirconium oxide and a aluminum oxide.