1. A method comprising:
introducing a drag reducing polymer, into a pipeline, such that such that the friction loss associated with the turbulent flow through the pipeline is reduced by suppressing the growth of turbulent eddies, into a liquid hydrocarbon having an asphaltene content of at least 3 weight percent and an API gravity of less than about 26\xb0 to thereby produce a treated liquid hydrocarbon wherein the viscosity of the treated liquid hydrocarbon is not less than the viscosity of the liquid hydrocarbon prior to treatment with the drag reducing polymer;
wherein the drag reducing polymer has a solubility parameter within 4 MPa12 of the solubility parameter of the liquid hydrocarbon and
the drag reducing polymer is added to the liquid hydrocarbon in the range from about 0.1 to about 500 ppmw.
2. The method of claim 1, wherein the solubility parameter of the drag reducing polymer is at least about 17 MPa12.
3. The method of claim 1, wherein the drag reducing polymer comprises at least about 25,000 repeating units.
4. The method of claim 1, wherein the drag reducing polymer has a weight average molecular weight of at least 1\xd7106 gmol.
5. The method of claim 1, wherein the drag reducing polymer has a solubility parameter within 2.5 MPa12 of the liquid hydrocarbon.
6. The method of claim 1, wherein the solubility parameter of the liquid hydrocarbon is determined by the following equation:
\u03b42=(\u0394Hv\u2212RT)V12
where \u0394Hv is the energy of vaporization, R is the universal gas constant, T is the temperature in Kelvin, V is the molar volume and \u03b42 is the solubility parameter.
7. The method of claim 1, wherein the solubility parameter of the drag reducing polymer is determined by the following equation:
\u03b4=(\u03b4d2+\u03b4p2+\u03b4h2)12
where \u03b4 is the solubility parameter, \u03b4d=\u03a3FdiV, \u03b4h=(\u03a3FhiV)12, \u03b4p=(\u03a3F2pi)12V.
8. The method of claim 1, wherein a plurality of the repeating units comprise a heteroatom.
9. The method of claim 8, wherein the heteroatom is selected from the group consisting of an oxygen atom, a nitrogen atom, a sulfur atom andor a phosphorus atom.
10. A method comprising:
introducing a drag reducing polymer having a solubility parameter of at least about 17 MPa12, into a pipeline, such that such that the friction loss associated with the turbulent flow through the pipeline is reduced by suppressing the growth of turbulent eddies, into a liquid hydrocarbon having an asphaltene content of at least 3 weight percent and an API gravity of less than about 26\xb0 to thereby produce a treated liquid hydrocarbon wherein the viscosity of the treated liquid hydrocarbon is not less than the viscosity of the liquid hydrocarbon prior to treatment with the drag reducing polymer;
wherein the drag reducing polymer has a solubility parameter within 4 MPa12 of the solubility parameter of the liquid hydrocarbon and the drag reducing polymer comprises at least about 25,000 repeating units, and wherein a plurality of the repeating units comprise a heteroatom, wherein the heteroatom is selected from the group consisting of an oxygen atom, a nitrogen atom, a sulfur atom andor a phosphorus atom and wherein the drag reducing polymer has a weight average molecular weight of at least 1\xd7106 gmol and
the drag reducing polymer is added to the liquid hydrocarbon in the range from about 0.1 to about 500 ppmw.
11. A method comprising:
introducing a drag reducing polymer, into a pipeline, such that such that the friction loss associated with the turbulent flow through the pipeline is reduced by suppressing the growth of turbulent eddies, into a liquid hydrocarbon;
wherein the drag reducing polymer has a solubility parameter within 4 MPa12 of the solubility parameter of the liquid hydrocarbon having an asphaltene content of at least 3 weight percent and an API gravity of less than about 26\xb0 to thereby produce a treated liquid hydrocarbon wherein the viscosity of the treated liquid hydrocarbon is not less than the viscosity of the liquid hydrocarbon prior to treatment with the drag reducing polymer;
wherein the solubility parameter of the liquid hydrocarbon is determined by the following equation:
\u03b42=(\u0394Hv\u2212RT)V12
where \u0394Hv is the energy of vaporization, R is the universal gas constant, T is the temperature in Kelvin, V is the molar volume and \u03b42 is the solubility parameter; and
wherein the solubility parameter of the drag reducing polymer is determined by the following equation:
\u03b4=(\u03b4d2+\u03b4p2+\u03b4h2)12
where \u03b4 is the solubility parameter, \u03b4d=\u03a3FdiV, \u03b4h=(\u03a3FhiV)12, \u03b4p=(\u03a3F2pi)12V and
the drag reducing polymer is added to the liquid hydrocarbon in the range from about 0.1 to about 500 ppmw.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A Schottky diode structure comprising:
a region of semiconductor material having a first major surface and a first conductivity type;
a doped region of a second conductivity type opposite the first conductivity type formed in the region of semiconductor material and extending from the first major surface, wherein the doped region comprises a first portion having a first dopant concentration in proximity to the first major surface and a second portion having a second dopant concentration in proximity to the first major surface, and wherein the second dopant concentration of the second portion is less than the first dopant concentration of the first portion, and wherein the first portion forms a first pn junction with a first part of the region of semiconductor material, and wherein the second portion forms a second pn junction with a second part of the region of semiconductor material;
a first conductive contact electrically coupled to a third part of the region of semiconductor material; and
a second conductive contact contacting the second portion at the first major surface but not the first portion, and wherein the second conductive contact forms a first Schottky barrier with a fourth part of the region of semiconductor material and a second Schottky barrier with the second portion, and wherein the first portion extends into the region of semiconductor material at a first vertical distance, and wherein the second conductive contact is offset from the first portion a lateral distance in a range from about 50% to about 80% of the first vertical distance.
2. The structure of claim 1, wherein the lateral distance is about 75% of the first vertical distance.
3. The structure of claim 1, wherein the first and second conductive contacts are on opposite surfaces of the region of semiconductor material.
4. The structure of claim 1, wherein the first and second conductive contacts are on the first major surface.
5. The structure of claim 1, wherein the first portion extends into the region of semiconductor material to define a first vertical boundary, and wherein the second portion extends into the region of semiconductor material to define a second vertical boundary.
6. The structure of claim 5, wherein the first vertical boundary extends into the region of semiconductor material to a greater extent than the second vertical boundary.
7. The structure of claim 1, wherein the region of semiconductor material comprises:
a semiconductor substrate; and
a semiconductor layer of the first conductivity type formed in spaced relationship with the semiconductor substrate.
8. The structure of claim 7, wherein the semiconductor substrate comprises the second conductivity type.
9. The structure of claim 1, wherein the first and second portions are contiguous.
10. A semiconductor device having a multi-portioned doped region comprising:
a region of semiconductor material having a first major surface and a first conductivity type;
a passivation layer formed overlying a first part of the region of semiconductor material, wherein the passivation layer includes a contact window with a first edge;
the multi-portioned doped region formed in a second part the region of semiconductor material and extending from the first major surface, wherein the multi-portioned doped region comprises a second conductivity type opposite to the first conductivity type, and wherein the multi-portioned doped region includes a first portion having a first dopant concentration in proximity to one portion of the first major surface and extending into the region of semiconductor material to a first vertical depth, a second portion having a second dopant concentration in proximity to a different portion of the first major surface and extending into the region of semiconductor material to a second vertical depth less than the first vertical depth, and a third portion laterally between the first and second portions, and wherein the third portion underlies the passivation layer a lateral distance from the first edge in a range from about 50% to about 80% of the first vertical depth, and wherein the second dopant concentration of the second portion is less than the first dopant concentration of the first portion, and wherein the first portion forms a first pn junction with the region of semiconductor material and the second portion forms a second pn junction with the region of semiconductor material; and
a conductive contact electrically coupled to a second part the region of semiconductor material, wherein the conductive contact further contacts at least a portion of the second portion at the major surface but not the first portion, and wherein the conductive contact forms a first Schottky barrier with the second part of the region of semiconductor material and a second Schottky barrier with the second portion.
11. The structure of claim 10, wherein the conductive contact is self-aligned to the second portion.
12. The structure of claim 10, wherein the first portion is contiguous with the third portion but not the second portion, and wherein the third portion is contiguous with the second portion.