1. A computer-readable medium having a data structure stored thereon, said data structure including at least:
a metal-1 systematic yield component representing systematic defects associated with a first metal layer;
a metal-2 systematic yield component representing systematic defects associated with a second metal layer;
a poly systematic yield component representing systematic defects associated with a polysilicon layer;
a contact-to-poly systematic yield component representing systematic defects associated with contacts between the polysilicon layer and the first metal layer; and,
a via M1-M2 systematic yield component representing systematic defects associated with vias between the first and second metal layers;
wherein said systematic yield components are used to estimate systematic yield losses associated with respective attributes of a proposed product layout.
2. The computer-readable medium of claim 1, wherein said data structure further includes at least:
a metal-3 systematic yield component representing systematic defects associated with a third metal layer; and,
a via M2-M3 systematic yield component representing systematic defects associated with vias between the second and third metal layers.
3. The computer-readable medium of claim 2, wherein:
the contact-to-poly systematic yield component includes an instance-based fault rate for contacts between the polysilicon layer and the first metal layer;
the via M1-M2 systematic yield component includes an instance-based fault rate for vias between the first and second metal layers; and,
the via M2-M3 systematic yield component includes an instance-based fault rate for vias between the second and third metal layers.
4. The computer-readable medium of claim 1, wherein:
the contact-to-poly systematic yield component includes an instance-based fault rate for contacts between the polysilicon layer and the first metal layer.
5. The computer-readable medium of claim 4, wherein:
the via M1-M2 systematic yield component includes an instance-based fault rate for vias between the first and second metal layers.
6. The computer-readable medium of claim 1, wherein:
the via M1-M2 systematic yield component includes an instance-based fault rate for vias between the first and second metal layers.
7. The computer-readable medium of claim 1, wherein said data structure further includes at least:
a metal-1 random yield component representing random defects associated with the first metal layer;
a metal-2 random yield component representing random defects associated with the second metal layer;
a poly random yield component representing random defects associated with the polysilicon layer;
a contact-to-poly random yield component representing random defects associated with contacts between the polysilicon layer and the first metal layer; and,
a via M1-M2 random yield component representing random defects associated with vias between the first and second metal layers;
wherein said random yield components are used to estimate random yield losses associated with respective attributes of the proposed product layout.
8. The computer-readable medium of claim 7, wherein said data structure further includes at least:
a metal-3 systematic yield component representing systematic defects associated with a third metal layer;
a via M2-M3 systematic yield component representing systematic defects associated with vias between the second and third metal layers;
a metal-3 random yield component representing random defects associated with the third metal layer; and,
a via M2-M3 random yield component representing random defects associated with vias between the second and third metal layers.
9. A method for estimating yield losses associated with manufacturing a proposed product layout in a particular manufacturing process, said method comprising at least the following acts:
estimating, using a computer, systematic yield losses associated with a first metal layer by combining at least (i) a metal-1 systematic yield component representing systematic defects associated with a said first metal layer of the manufacturing process and (ii) a layout attribute related to a corresponding first metal layer of the proposed product layout to estimate systematic yield losses associated with said first metal layer;
estimating systematic yield losses associated with a second metal layer by combining at least (i) a metal-2 systematic yield component representing systematic defects associated with said second metal layer of the manufacturing process and (ii) a layout attribute related to a corresponding second metal layer of the proposed product layout to estimate systematic yield losses associated with said second metal layer;
estimating systematic yield losses associated with a polysilicon layer by combining at least (i) a poly systematic yield component representing systematic defects associated with a said polysilicon layer of the manufacturing process and (ii) a layout attribute related to a corresponding polysilicon layer of the proposed product layout to estimate systematic yield losses associated with said polysilicon layer;
estimating systematic yield losses associated with contacts between the polysilicon layer and the first metal layer by combining at least (i) a contact-to-poly systematic yield component representing systematic defects associated with contacts between the polysilicon layer and the first metal layer of the manufacturing process and (ii) a layout attribute related to corresponding contacts between the polysilicon layer and the first metal layer of the proposed product layout to estimate systematic yield losses associated with said contacts; and,
estimating systematic yield losses associated with vias between the first and second metal layers by combining at least (i) a via M1-M2 systematic yield component representing systematic defects associated with vias between the first and second metal layers of the manufacturing process and (ii) a layout attribute related to corresponding vias between the first and second metal layers of the proposed product layout to estimate systematic yield losses associated with said vias.
10. The method of claim 9, further comprising at least the following acts:
estimating systematic yield losses associated with a third metal layer by combining at least (i) a metal-3 systematic yield component representing systematic defects associated with said third metal layer of the manufacturing process and (ii) a layout attribute related to a corresponding third metal layer of the proposed product layout to estimate systematic yield losses associated with said third metal layer;
estimating systematic yield losses associated with vias between the second and third metal layers by combining at least (i) a via M2-M3 systematic yield component representing systematic defects associated with vias between the second and third metal layers of the manufacturing process and (ii) a layout attribute related to corresponding vias between the second and third metal layers of the proposed product layout to estimate systematic yield losses associated with said vias.
11. The method of claim 9, further comprising at least the following acts:
estimating random yield losses associated with the first metal layer by combining at least (i) a metal-1 random yield component representing random defects associated with the first metal layer of the manufacturing process and (ii) a layout attribute related to the corresponding first metal layer of the proposed product layout to estimate random yield losses associated with said first metal layer; and,
estimating random yield losses associated with the second metal layer by combining at least (i) a metal-2 random yield component representing random defects associated with the second metal layer of the manufacturing process and (ii) a layout attribute related to the corresponding second metal layer of the proposed product layout to estimate random yield losses associated with said second metal layer.
12. The method of claim 11, further comprising at least the following act:
estimating random yield losses associated with the polysilicon layer by combining at least (i) a poly random yield component representing random defects associated with the polysilicon layer of the manufacturing process and (ii) a layout attribute related to the corresponding polysilicon layer of the proposed product layout to estimate systematic yield losses associated with said polysilicon layer.
13. The method of claim 12, further comprising at least the following acts:
estimating random yield losses associated with contacts between the polysilicon layer and the first metal layer by combining at least (i) a contact-to-poly random yield component representing random defects associated with contacts between the polysilicon layer and the first metal layer of the manufacturing process and (ii) a layout attribute related to the corresponding contacts between the polysilicon layer and the first metal layer of the proposed product layout to estimate random yield losses associated with said contacts; and,
estimating random yield losses associated with vias between the first and second metal layers by combining at least (i) a via M1-M2 random yield component representing random defects associated with vias between the first and second metal layers of the manufacturing process and (ii) a layout attribute related to the corresponding vias between first and second metal layers of the proposed product layout to estimate random yield losses associated with said vias.
14. The method of claim 13, further comprising at least the following acts:
estimating random yield losses associated with the third metal layer by combining at least (i) a metal-3 random yield component representing random defects associated with the third metal layer of the manufacturing process and (ii) a layout attribute related to the corresponding third metal layer of the proposed product layout to estimate random yield losses associated with said third metal layer; and,
estimating random yield losses associated with vias between the second and third metal layers by combining at least (i) a via M2-M3 random yield component representing random defects associated with vias between the second and third metal layers of the manufacturing process and (ii) a layout attribute related to the corresponding vias between second and third metal layers of the proposed product layout to estimate random yield losses associated with said vias.
15. A computer-readable medium having a data structure stored thereon for storing a computer-generated yield impact report for a proposed product layout, said computer-generated report comprising at least the following:
a computer-generated estimate of systematic yield losses associated with a first metal layer of the proposed product layout;
a computer-generated estimate of systematic yield losses associated with a second metal layer of the proposed product layout;
a computer-generated estimate of systematic yield losses associated with a polysilicon layer of the proposed product layout;
a computer-generated estimate of systematic yield losses associated with contacts between the polysilicon layer and the first metal layer in the proposed product layout; and,
a computer-generated estimate of systematic yield losses associated with vias between the first and second metal layers in proposed product layout.
16. The computer-readable medium of claim 15, wherein said computer-generated report further includes at least the following:
a computer-generated estimate of random yield losses associated with the first metal layer of the proposed product layout.
17. The computer-readable medium of claim 16, wherein said computer-generated report further includes at least the following:
a computer-generated estimate of random yield losses associated with the second metal layer of the proposed product layout.
18. The computer-readable medium of claim 16, wherein said computer-generated report further includes at least the following:
a computer-generated estimate of random yield losses associated with the polysilicon layer of the proposed product layout.
19. The computer-readable medium of claim 18, wherein said computer-generated report further includes at least the following:
a computer-generated estimate of random yield losses associated with contacts between the polysilicon layer and the first metal layer in the proposed product layout.
20. The computer-readable medium of claim 19, wherein said computer-generated report further includes at least the following:
a computer-generated estimate of random yield losses associated with vias between the first and second metal layers in the proposed product layout.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
I claim:
1. A four-cycle internal combustion engine having a piston reciprocably movable within a cylinder, a crankshaft, a rod connecting the piston to the crankshaft and means arranged between the rod and the crankshaft to vary the stroke of the piston, said means for varying the stroke comprising an internal gear fixed on the frame of the engine, an external gear engaged with the internal gear as rotatably supported on the crankpin of the crankshaft and an eccentric member fixed eccentrically to the crankpin on the external gear, characterized in that the eccentiric distance of the crankpin, the radius of the pitch circle of the external gear and the radius of the pitch circle of the internal gear are in the ratio of one to two to three.
2. A four-cycle internal combustion engine as in claim 1, wherein the eccentric member is a circular cam.
3. A four-cycle internal combustion engine as in claim 1, wherein the eccentric member is a journal.