1460740440-0913fc74-1680-4d33-9c77-198f4bab9c17

1. A dual-panel display system comprising:
a backlight;
a first image-generating panel;
a second contrast-improving panel;
a control module for selecting a codeword (CW) pair for driving said first image-generating panel and said second contrast-improving panel respectively according to input image data; and
further wherein said control module is capable of selecting the CW pair to improve final image rendering presented to a viewer.
2. The display according to claim 1, wherein the first image-generating panel comprises a monochrome LCD panel.
3. The display according to claim 2, wherein the second contrast-improving panel comprises a chromatic LCD panel.
4. The display according to claim 3, wherein said control module is capable of selecting a first CW for driving said first image-generating panel from among a set of possible CW pairs that satisfy a desired luminance setting according to input image data.
5. The display according to claim 4, wherein said first CW for driving said first image-generating panel is substantially the minimum CW value among the set of possible CW pairs that satisfy a desired luminance setting according to input image data.
6. The display according to claim 4 wherein said first CW for driving said first image-generating panel is substantially the CW for minimum Just Noticeable Difference (JND) steps among the set of possible CW pairs that satisfy a desired luminance setting according to input image data.
7. The display according to claim 4 wherein said control module is capable of:
selecting a first minimum CW for driving said first image-generating panel that is substantially the minimum CW value among the set of possible CW pairs that satisfy a desired luminance setting according to input image data;
selecting a first minimum JND CW for driving said first image-generating panel is substantially the CW for minimum JND steps among the set of possible CW pairs that satisfy a desired luminance setting according to input image data; and
combining minimum CW image data and minimum JND CW image data according to said first minimum CW image data and said first minimum JND CW image data to select a final first CW for driving said first image-generating panel.
8. The display according to claim 7 wherein said control module is capable of filtering said CW image data by spreading the energy of said CW image data while substantially maintaining the peak energy of the CW image data.
9. The display according to claim 8 wherein said spreading of energy comprises dilating and filtering of said CW image data.
10. The display according to claim 9 wherein said control module is capable of selecting a second CW to drive said second contrast-improving panel according to said first CW selected to drive said first image-generating panel.
11. The display according to claim 10 wherein said second CW is selected among a set of possible second CWs to improve final image rendering presented to a viewer.
12. In a dual-panel display system, said dual-panel display system comprising: a backlight, a first image-generating panel, a second contrast-improving panel, a method for selecting a codeword (CW) pair for driving said first image-generating panel and said second contrast-improving panel respectively according to input image data; the steps of said method comprising:
inputting image data to be rendered by said dual-panel display system;
finding a first CW for driving said first image-generating panel based upon input image data; and
finding a second CW for driving said second contrast-improving panel, said first CW and said second CW comprising the CW pair, and wherein the CW pair improves final image rendering according to a desired metric.
13. The method of claim 12 wherein the step of finding a first CW for driving said first image further comprises:
extracting the maximum color component value from the input image data; and
finding a first CW for said first image-generating panel that meets the maximum color component value extracted from the input image data.
14. The method of claim 13 wherein the step of finding a first CW for said first image-generating panel that meets the maximum color component value extracted from the input image data further comprises:
finding the set of possible CW pairs of first CWs and second CWs; and
selecting the first CW that is substantially minimum among the set of possible CW pairs.
15. The method of claim 13 wherein the step of finding a first CW for said first image-generating panel that meets the maximum color component value extracted from the input image data further comprises:
finding the set of possible CW pairs of first CWs and second CWs; and
selecting the first CW that substantially minimizes the JND steps among the set of possible CW pairs.
16. The method of claim 12 wherein the step of finding a first CW for driving said first image generating panel further comprises:
extracting the maximum color component value from the input image data; and
finding the CW for said first image-generating panel that meets the maximum color component value extracted from the input image data and substantially minimizes the JND steps.
17. The method of claim 16 wherein the step of finding the CW for said first image-generating panel that meets the maximum color component value extracted from the input image data and substantially minimizes the JND steps further comprises:
finding the set of possible CW pairs of first CWs and second CWs; and
selecting from the set of possible CW pairs the first CW that substantially minimizes the JND steps.
18. The method of claim 12 wherein said method further comprises the steps of:
finding the minimum CW image data;
finding the minimum JND CW image data; and
combining the minimum CW image data and the minimum JND CW image data to select a first CW.
19. The method of claim 18 wherein said step of combining the minimum CW image and the minimum JND CW image to select a final first CW image further comprises:
filtering the minimum CW image data and the minimum JND CW image data with a narrow filter to create a first intermediate CW image data;
filtering the minimum CW image data and the minimum JND CW image data with a wide filter to create a second intermediate CW image data;
mixing said first intermediate CW image data and said second intermediate CW image data to create a third CW image data.
20. The method of claim 19 wherein the step of mixing said first intermediate CW image data and said second intermediate CW image data to create a third CW data image further comprises:
creating said third CW image data such that said third CW image data comprises energy spread out while substantially maintaining the peak energy derivable from the input image data.
21. The method of claim 12 wherein said method further comprises the steps of:
finding said second CW such that the selected CW pair substantially minimizes JND steps.
22. The method of claim 12 wherein said method further comprises the steps of:
finding said second CW such that the selected CW pair substantially minimizes contouring in said final image presented to a viewer.
23. The method of claim 12 wherein said method further comprises the steps of:
finding said second CW such that the selected CW pair substantially minimizes parallax in said final image presented to a viewer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A display device comprising:
a capacitor comprising:
a first electrode; and
a second electrode;

a thin film transistor comprising:
an island-like semiconductor film;
a gate insulating film in contact with the island-like semiconductor film;
a gate electrode in contact with the gate insulating film;

a first nitride insulating film covering the thin film transistor;
a photosensitive organic resin film over and in contact with the first nitride insulating film, the photosensitive organic resin film having a first opening portion and a second opening portion;
a second nitride insulating film over and in contact with the photosensitive organic resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and
a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,
wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion,
wherein the first electrode is formed from a same layer as the gate electrode, and
wherein the second electrode is formed from a same layer as the third electrode.
2. The display device according to claim 1, wherein the third electrode is a pixel electrode comprising an oxide conductive film.
3. The display device according to claim 1, wherein the first opening portion and the second opening portion are formed by exposure and development.
4. The display device according to claim 1, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
5. The display device according to claim 1, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.
6. An electronics employing the display device according to claim 1, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.
7. A display device comprising:
a capacitor comprising:
a first electrode; and
a second electrode;

a first nitride insulating film covering the thin film transistor;
a resin film over and in contact with the first nitride insulating film, the resin film having a first opening portion and a second opening portion;
a second nitride insulating film over and in contact with the resin film, wherein a part of the first nitride insulating film is in contact with a part of the second nitride insulating film in a bottom portion of the first opening portion, and wherein the second nitride insulating film has a third opening portion and a fourth opening portion overlapped with the first opening portion; and
a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,
wherein the capacitor comprises at least one of a part of the first nitride insulating film and a part of the second nitride insulating film which is overlapped with the first electrode and the second electrode in the second opening portion,
wherein the first electrode is formed from a same layer as the gate electrode,
wherein the second electrode is formed from a same layer as the third electrode,
wherein a section of an edge portion of the first opening portion curves, and
wherein a section of an edge portion of the second opening portion curves.
14. The display device according to claim 13, wherein the third electrode is a pixel electrode comprising an oxide conductive film.
15. The display device according to claim 13, wherein the first opening portion and the second opening portion are formed by exposure and development.
16. The display device according to claim 13, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
17. The display device according to claim 13, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.
18. An electronics employing the display device according to claim 13, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.
19. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
an inorganic insulating film over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening so as to expose a portion of a top surface of the inorganic insulating film around the first opening; and
a pixel electrode over the organic resin film,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening and the second opening.
20. The semiconductor device according to claim 19, wherein the inorganic insulating film comprises silicon and nitrogen.
21. The semiconductor device according to claim 19, wherein the curved inner wall surface includes a convex surface.
22. The semiconductor device according to claim 19, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
23. The semiconductor device according to claim 19, wherein a curvature radius of the curved inner wall surface is continuously changed.
24. The semiconductor device according to claim 19, wherein the electrode comprises metal.
25. The semiconductor device according to claim 19, wherein a diameter of the second opening is larger than a diameter of the first opening.
26. The semiconductor device according to claim 19, wherein the semiconductor layer comprises silicon.
27. The semiconductor device according to claim 19, wherein the inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
28. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening;
a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and
a pixel electrode over the second inorganic insulating film,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening.
29. The semiconductor device according to claim 28,
wherein the first inorganic insulating film is a silicon nitride film, and
wherein the second inorganic insulating film is a silicon nitride film.
30. The semiconductor device according to claim 28, wherein the curved inner wall surface includes a convex surface.
31. The semiconductor device according to claim 28, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
32. The semiconductor device according to claim 28, wherein a curvature radius of the curved inner wall surface is continuously changed.
33. The semiconductor device according to claim 28, wherein the electrode comprises metal.
34. The semiconductor device according to claim 28, wherein the semiconductor layer comprises silicon.
35. The semiconductor device according to claim 28, wherein the first inorganic insulating film comprises silicon and nitrogen.
36. The semiconductor device according to claim 28, wherein the first inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
37. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening;
a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and
a pixel electrode over the second inorganic insulating film,
wherein the second inorganic insulating film is in contact with the first inorganic insulating film in the second opening,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening.
38. The semiconductor device according to claim 37,
wherein the first inorganic insulating film is a silicon nitride film, and
wherein the second inorganic insulating film is a silicon nitride film.
39. The semiconductor device according to claim 37, wherein the curved inner wall surface includes a convex surface.
40. The semiconductor device according to claim 37, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
41. The semiconductor device according to claim 37, wherein a curvature radius of the curved inner wall surface is continuously changed.
42. The semiconductor device according to claim 37, wherein the electrode comprises metal.
43. The semiconductor device according to claim 37, wherein a diameter of the second opening is larger than a diameter of the first opening.
44. The semiconductor device according to claim 37, wherein the semiconductor layer comprises silicon.
45. The semiconductor device according to claim 37, wherein the first inorganic insulating film comprises silicon and nitrogen.
46. The semiconductor device according to claim 37, wherein the first inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
47. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening;
a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and
a pixel electrode over the second inorganic insulating film,
wherein a diameter of the second opening is larger than a diameter of the first opening,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening.
48. The semiconductor device according to claim 47,
wherein the first inorganic insulating film is a silicon nitride film, and
wherein the second inorganic insulating film is a silicon nitride film.
49. The semiconductor device according to claim 47, wherein the curved inner wall surface includes a convex surface.
50. The semiconductor device according to claim 47, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
51. The semiconductor device according to claim 47, wherein a curvature radius of the curved inner wall surface is continuously changed.
52. The semiconductor device according to claim 47, wherein the electrode comprises metal.
53. The semiconductor device according to claim 47, wherein the semiconductor layer comprises silicon.
54. The semiconductor device according to claim 47, wherein the first inorganic insulating film comprises silicon and nitrogen.
55. The semiconductor device according to claim 47, wherein the first inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.