1. A computer-readable medium encoded with executable instructions, the instructions for:
providing a representation of resource space of the system indicating an amount of available resources of the system organized by dimensions of codes, timeslots and frames, wherein the representation includes a current frame and at least one frame other than the current frame, and the representation is organized such that the current frame is at the front of the representation;
searching the representation, wherein the searching only includes searching the current frame of the representation to identify unallocated resources;
allocating resources of the system to the current frame and the at least one frame other than the current frame of the representation of resource space, based on the search of the current frame, wherein the allocated resources are assigned to at least one user; and
transmitting an indication of the assigned allocated resources to the at least one user.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor device comprising the steps of:
preparing a combined wafer in which a plurality of SiC substrates each made of silicon carbide single-crystal are arranged side by side when viewed in a planar view and main surfaces of said plurality of SiC substrates at one side are connected to each other by a supporting layer;
fabricating a first intermediate wafer by forming an active layer on each of said SiC substrates of said combined wafer;
fabricating a second intermediate wafer by forming a front-side electrode on said active layer of said first intermediate wafer;
supporting said plurality of SiC substrates using an adhesive tape with said plurality of SiC substrates being arranged side by side when viewed in a planar view, by adhering to said adhesive tape a main surface of said second intermediate wafer on which said front-side electrode is formed;
removing said supporting layer while supporting said plurality of SiC substrates of said second intermediate wafer using said adhesive tape with said plurality of SiC substrates being arranged side by side when viewed in a planar view;
forming a backside electrode on the main surfaces of said SiC substrates exposed by the removal of said supporting layer;
adhering an adhesive tape at the side thereof on which said backside electrode is formed, and removing said adhesive tape from the side thereof on which said front-side electrode is formed, so as to support said plurality of SiC substrates using said adhesive tape with said plurality of SiC substrates being arranged side by side when viewed in a planar view; and
obtaining a plurality of semiconductor devices by cutting said SiC substrates in a thickness direction thereof while said SiC substrates are supported by said adhesive tape provided at the side on which said backside electrode is formed, with said SiC substrates being arranged side by side when viewed in a planar view.
2. The method for manufacturing the semiconductor device according to claim 1, wherein:
the step of forming said backside electrode includes the steps of
forming a metal layer on the main surfaces of said SiC substrates exposed by the removal of said supporting layer, and
heating said metal layer.
3. The method for manufacturing the semiconductor device according to claim 2, wherein in the step of heating said metal layer, said front-side electrode has a temperature maintained at 180\xb0 C. or smaller.
4. The method for manufacturing the semiconductor device according to claim 2, wherein in the step of heating said metal layer, said metal layer is locally heated.
5. The method for manufacturing the semiconductor device according to claim 4, wherein in the step of heating said metal layer, said metal layer is locally heated by irradiating said metal layer with a laser.
6. The method for manufacturing the semiconductor device according to claim 5, wherein said laser has a wavelength of 355 nm.
7. The method for manufacturing the semiconductor device according to claim 2, further comprising the step of replacing, after the step of forming said metal layer and before the step of heating said metal layer, said adhesive tape provided at the side of said SiC substrates on which said front-side electrode is formed, while maintaining the state in which said plurality of SiC substrates are arranged side by side when viewed in a planar view.
8. The method for manufacturing the semiconductor device according to claim 1, further comprising the step of replacing, after the step of removing said supporting layer and before the step of forming said backside electrode, said adhesive tape provided at the side of said SiC substrates on which said front-side electrode is formed, while maintaining the state in which said plurality of SiC substrates are arranged side by side when viewed in a planar view.
9. The method for manufacturing the semiconductor device according to claim 1, wherein as said adhesive tape, an adhesive tape having adhesive force to be reduced when being irradiated with ultraviolet rays is used.
10. The method for manufacturing the semiconductor device according to claim 1, wherein as said adhesive tape, an adhesive tape having adhesive force to be reduced when being heated is used.