1. A trench isolation method of a semiconductor device comprising:
preparing a semiconductor substrate having an N-MOS region and a P-MOS region;
forming a first mask pattern exposing an N-MOS field region on the N-MOS region, and forming a second mask pattern exposing a P-MOS field region on the P-MOS region;
etching the semiconductor substrate of the N-MOS field region and the P-MOS field region exposed by the first and second mask patterns respectively, thereby forming a first preliminary trench and a second preliminary trench;
forming a first photoresist pattern covering the P-MOS region and exposing the N-MOS region on the semiconductor substrate having the first and second preliminary trenches;
implanting first impurity ions into inner walls of the first preliminary trench, using the first mask pattern and the first photoresist pattern as ion implantation masks, thereby forming a first impurity layer, a portion of the first impurity layer being formed to extend below the first mask pattern;
removing the first photoresist pattern;
anisotropically etching the semiconductor substrate having the first and second preliminary trenches, using the first and second mask patterns as etch masks, thereby forming a first trench and a second trench, and concurrently, forming a first impurity pattern of the first impurity layer remaining below the first mask pattern; and
forming a trench isolation layer filling the first and second trenches.
2. The method according to claim 1, wherein the first and second mask patterns each comprise a pad oxide pattern and a hard mask pattern, which are sequentially stacked.
3. The method according to claim 2, wherein the hard mask pattern comprises a silicon nitride layer or silicon oxynitride (SiON) layer.
4. The method according to claim 1, wherein the first impurity ions are impurity ions of Group III.
5. The method according to claim 4, wherein the first impurity ions are implanted by an ion implantation method using about 0.2 to about 100 keV of energy.
6. The method according to claim 4, wherein the first impurity ions are implanted at a dose of about 1\xd71011 to about 1\xd71016 ionscm2.
7. The method according to claim 1 further comprising:
forming a second photoresist pattern covering the N-MOS region and exposing the P-MOS region;
implanting second impurity ions into inner walls of the second preliminary trench, using the second photoresist pattern and the second mask pattern as ion implantation masks, thereby forming a second impurity layer, a portion of the second impurity layer being formed to extend below the second mask pattern; and
removing the second photoresist pattern.
8. The method according to claim 7, wherein etching the semiconductor substrate further forms a second impurity pattern of the second impurity layer remaining below the second mask pattern concurrently with the formation of the second trench.
9. The method according to claim 7, wherein the second impurity ions comprise boron (B), boron difluoride (BF2), arsenic (As), phosphorus (P), or indium (In) ions.
10. The method according to claim 7, wherein the second impurity ions are implanted by an ion implantation method using about 0.2 to about 100 keV of energy.
11. The method according to claim 7, wherein the second impurity ions are implanted at a dose of about 1\xd71011 to about 1\xd71016 ionscm2.
12. The method according to claim 7, further comprising annealing the semiconductor substrate having the first and second impurity layers formed thereon.
13. The method according to claim 12, wherein the annealing operation is performed at a temperature of 600\xb0 C. to 1000\xb0 C.
14. The method according to claim 1, wherein the operation of forming the trench isolation layer comprises:
forming an insulating layer for isolation filling the first and second trenches on an overall surface of the semiconductor substrate having the first and second trenches;
planarizing the insulating layer for isolation until the first and second mask patterns are exposed; and
removing the exposed first and second mask patterns, thereby exposing the semiconductor substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a liquid container in which a negative pressure generating member is contained in a first recessed portion separated from a second recessed portion by a partition wall with a communication portion formed therein, the method comprising:
a compression step of pressing, before the negative pressure generating member is placed in the first recessed portion, a plurality of outer surfaces of the negative pressure generating member so that the negative pressure generating member becomes smaller than an opening of the first recessed portion, the plurality of outer surfaces of the negative pressure generating member including a first outer surface which is pressed by a first compression member and which is to contact a surface of the partition wall positioned in the first recessed portion and a second outer surface which is pressed by a second compression member and which is to contact an inner surface of the first recessed portion lying opposite the partition wall; and
a placing step of placing the negative pressure generating member in the first recessed portion while releasing the pressure exerted on the first outer surface by the first compression member and while maintaining the pressure exerted on the second outer surface by the second compression member so that the negative pressure generating member is positionally biased toward the partition wall, and after the negative pressure generating member is placed in the first recessed portion, releasing the pressure exerted on the second outer surface by the second compression member.
2. The method for manufacturing a liquid container according to claim 1, wherein the compression step includes a step of keeping the negative pressure generating member compressed at a position opposite to the opening of the first recessed portion, and
the placing step includes a step of moving an insertion pawl extending from the second compression member, along the inner surface of the first recessed portion, and then moving the negative pressure generating member from the opposite position into the first recessed portion.
3. The method for manufacturing a liquid container according to claim 2, wherein in the placing step, in a case where the negative pressure generating member is moved from the opposite position into the first recessed portion, the surface of the partition wall is positioned more outwardly than the first outer surface of the negative pressure generating member pressed by the first compression member.
4. The method for manufacturing a liquid container according to claim 2, wherein in the placing step, in a case where the negative pressure generating member is moved from the opposite position into the first recessed portion, a first insertion pawl extending from the first compression member is inserted into a vicinity of the opening of the first recessed portion and a second insertion pawl extending from the second compression member is inserted into a vicinity of a bottom of the first recessed portion.
5. The method for manufacturing a liquid container according to claim 1, comprising a plurality of compression members including the first and second compression members, and
the plurality of compression members form an insertion pipe surrounding the plurality of outer surfaces when the negative pressure generating member is compressed.
6. The method for manufacturing a liquid container according to claim 1, further comprising a step of fixing a cover member covering the opening of the first recessed portion and an opening of the second recessed portion.
7. An apparatus for manufacturing a liquid container in which a negative pressure generating member is contained in a first recessed portion separated from a second recessed portion by a partition wall with a communication portion formed therein, the apparatus comprising:
a compression unit configured to press, before the negative pressure generating member is placed in the first recessed portion, a plurality of outer surfaces of the negative pressure generating member by a compression member so that the negative pressure generating member becomes smaller than an opening of the first recessed portion, the plurality of outer surfaces of the negative pressure generating member including a first outer surface which is to contact a surface of the partition wall positioned in the first recessed portion and a second outer surface which is to contact an inner surface of the first recessed portion lying opposite the partition wall; and
a placing unit configured to place the negative pressure generating member in the first recessed portion while releasing the pressure exerted on the first outer surface by the compression member and while maintaining the pressure exerted on the second outer surface by the compression member so that the negative pressure generating member is positionally biased toward the partition wall, and after the negative pressure generating member is placed in the first recessed portion, release the pressure exerted on the second outer surface by the compression member,
wherein the compression member includes a first compression member pressing the first outer surface and a second compression member pressing the second outer surface,
the compression unit keeps the negative pressure generating member compressed at a position opposite to the opening of the first recessed portion, and
the placing unit moves an insertion pawl extending from the second compression member, along the inner surface of the first recessed portion, and then moves the negative pressure generating member from the opposite position into the first recessed portion.
8. The apparatus for manufacturing a liquid container according to claim 7, wherein in a case where the negative pressure generating member is moved from the opposite position into the first recessed portion, the surface of the partition wall is positioned more outwardly than the first outer surface of the negative pressure generating member pressed by the first compression member.
9. The apparatus for manufacturing a liquid container according to claim 7, wherein the placing unit causes, in a case where the negative pressure generating member is moved from the opposite position into the first recessed portion, a first insertion pawl extending from the first compression member to be inserted into a vicinity of the opening of the first recessed portion and a second insertion pawl extending from the second compression member to be inserted into a vicinity of a bottom of the first recessed portion.