1. A solid state lighting (SSL) device, comprising:
a first semiconductor material;
a second semiconductor material spaced apart from the first semiconductor material; and
an active region between the first and second semiconductor materials;
a contact on one of the first and second semiconductor materials, the contact including a first material and a second material, the second material being in contact with both the first material and the one of the first and second semiconductor materials, wherein\u2014
the second material includes a plurality of pillars arranged in a predetermined, uniform array, and
individual pillars of the plurality of pillars form Ohmic contacts with both the first material and the one of the first and second semiconductor material.
2. The SSL device of claim 1 wherein:
the contact is a first contact on the first semiconductor material;
the SSL device further includes a second contact on the second semiconductor material;
the second contact is laterally spaced apart from the first contact;
the first semiconductor material includes a P-type gallium nitride (GaN) material;
the second semiconductor material includes an N-type GaN material;
the active region includes at least one of a bulk indium gallium nitride (InGaN) material, an InGaN single quantum well (\u201cSQW\u201d), and GaNInGaN multiple quantum wells (\u201cMQWs\u201d);
the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the second material includes silver; and
the first material encapsulates the second material.
3. The SSL device of claim 1 wherein:
the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the second material includes silver; and
the first material is also in contact with the first semiconductor material.
4. The SSL device of claim 1 wherein:
the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the second material includes silver; and
the first material encapsulates the second material.
5. The SSL device of claim 1 wherein:
the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the second material includes silver;
the first material encapsulates the second material; and
the individual pillars are spaced apart from one another by a spacing that is at least three times of a size of the individual pillars.
6. The SSL device of claim 1 wherein:
the contact is a first contact on the first semiconductor material;
the SSL device further includes a second contact on the second semiconductor material;
the second contact is spaced apart from the first contact by the first semiconductor material, the active region, and the second semiconductor material;
the first semiconductor material includes a P-type gallium nitride (GaN) material;
the second semiconductor material includes an N-type GaN material;
the active region include at least one of a bulk indium gallium nitride (InGaN) material, an InGaN single quantum well (\u201cSQW\u201d), and GaNInGaN multiple quantum wells (\u201cMQWs\u201d);
the first material includes aluminum;
the second material includes silver;
the first material encapsulates the second material; and
the second material includes a plurality of pillars arranged in an array.
7. The SSL device of claim 1 wherein:
the contact is a first contact on the first semiconductor material, the first contact including a first contact surface and a second contact surface opposite the first contact surface;
the SSL device further includes a second contact on the second semiconductor material;
the second contact is spaced apart from the first contact by the first semiconductor material, the active region, and the second semiconductor material;
the second material includes silver;
the first material encapsulates the second material; and
the pillars extend to an intermediate depth between the first and second contact surfaces.
8. A solid state lighting (SSL) device, comprising:
a first semiconductor material;
a second semiconductor material spaced apart from the first semiconductor material;
an active region between the first and second semiconductor materials; and
a contact on one of the first and second semiconductor materials, the contact including a first conductive material and a plurality of discrete contact pads in contact with the first conductive material, wherein\u2014
the contact pads individually include a portion of a second conductive material different than the first conductive material,
the second material being the same for each of the individual contact pads, and
the contact pads are arranged in a predetermined, uniform array.
9. The SSL device of claim 8 wherein the first conductive material encapsulates the plurality of contact pads.
10. The SSL device of claim 8 wherein the contact pads extend between the first semiconductor material and the first conductive material.
11. The SSL device of claim 8 wherein:
the contact pads individually include a first end in contact with the first semiconductor material and a second end in contact with the first conductive material; and
the SSL device further includes a support material extending between the first and second ends of the contact pads.
12. The SSL device of claim 8 wherein the second conductive material forms an Ohmic contact with both the first semiconductor material and the first conductive material.
13. A method of forming a solid state lighting (SSL) device, comprising:
forming an SSL structure on a substrate material, the SSL structure including a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials;
forming a plurality of contact elements on one of the first and second semiconductor materials, the individual contact elements forming a first Ohmic contact with the one of the first and second semiconductor materials, wherein the individual contact elements\u2014
are arranged in a predetermined, uniform array; and
depositing a conductive material onto one of the first and second semiconductor materials with the contact elements, the conductive material forming a second Ohmic contact with the plurality of contact elements.
14. The method of claim 13 wherein forming a plurality of contact elements includes:
depositing a masking material onto the one of the first and second semiconductor materials;
patterning the masking material to form a plurality of openings; and
depositing silver onto one of the first and second semiconductor materials via the openings.
15. The method of claim 13 wherein:
forming a plurality of contact elements includes:
depositing a masking material onto the one of the first and second semiconductor materials;
patterning the masking material to form a plurality of openings;
depositing silver onto the one of the first and second semiconductor materials via the openings; and
removing the masking material after depositing silver; and
depositing the conductive material includes depositing the conductive material onto the one of the first and second semiconductor materials with the deposited silver.
16. The method of claim 13 wherein:
forming a plurality of contact elements includes:
depositing a masking material onto the one of the first and second semiconductor materials;
patterning the masking material to form a plurality of openings;
depositing silver onto the one of the first and second semiconductor materials via the openings; and
removing the masking material after depositing silver; and
depositing the conductive material includes depositing aluminum onto the one of the first and second semiconductor materials with the deposited silver.
17. The method of claim 13 wherein:
forming a plurality of contact elements includes:
depositing a masking material onto the one of the first and second semiconductor materials;
patterning the masking material to form a plurality of openings;
depositing silver onto the one of the first and second semiconductor materials via the openings; and
removing the masking material after depositing silver; and
depositing the conductive material includes depositing at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide onto the one of the first and second semiconductor materials with the deposited silver.
18. The method of claim 13 wherein:
forming a plurality of contact elements includes:
depositing a support material onto the one of the first and second semiconductor materials;
patterning the support material to form a plurality of openings; and
depositing silver onto the one of the first and second semiconductor materials via the openings; and
depositing the conductive material includes depositing the conductive material onto the deposited silver and the support material.
19. The method of claim 13 wherein:
forming a plurality of contact elements includes:
depositing a support material onto the one of the first and second semiconductor materials, the support material including at least one of indium tin oxide, aluminum zinc oxide, fluorine-doped tin oxide, silicon dioxide, and silicon nitride;
patterning the support material to form a plurality of openings; and
depositing silver onto the one of the first and second semiconductor materials via the openings; and
depositing the conductive material includes depositing at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide onto the deposited silver and the support material.
20. The method of claim 13 wherein:
forming a plurality of contact elements includes:
depositing a contact material onto the one of the first and second semiconductor materials;
depositing a masking material onto the contact material;
patterning the masking material to form a plurality of openings;
removing a portion of the deposited contact material via the openings to form the contact elements; and
depositing the conductive material includes depositing the conductive material onto the one of the first and second semiconductor materials with the formed contact elements.
21. A solid state lighting (SSL) device, comprising:
a semiconductor material; and
a contact on the semiconductor material, the contact including a first material and a second material, the second material being in contact with both the first material and the semiconductor material, wherein\u2014
the second material forms Ohmic contacts with both the first material and the semiconductor material,
the second material includes a plurality of contact elements in contact with the semiconductor material and arranged in a predetermined, uniform array,
the second material is the same for each of the individual contact elements, and
the individual contact elements include a discrete pillar or pad.
22. The SSL device of claim 21 wherein:
the semiconductor material is a first semiconductor material;
the contact is a first contact on the first semiconductor material;
the SSL device further includes a second semiconductor material and a second contact on the second semiconductor material; and
the first material encapsulates the second material.
23. The SSL device of claim 21 wherein:
the semiconductor material is a first semiconductor material;
the contact is a first contact on the first semiconductor material;
the SSL device further includes a second semiconductor material and a second contact on the second semiconductor material;
the second contact is laterally spaced apart from the first contact;
the first material includes at least one of indium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide;
the second material includes silver; and
the first material encapsulates the second material.
24. The SSL device of claim 21 wherein:
the semiconductor material is a first semiconductor material;
the contact is a first contact on the first semiconductor material;
the SSL device further includes a second semiconductor material and a second contact on the second semiconductor material;
the second contact is vertically spaced apart from the first contact;
the first material includes aluminum;
the second material includes silver;
the first material encapsulates the second material; and
the contact elements include a plurality of pillars arranged in an array.
25. The SSL device of claim 1 wherein:
the first material includes an optically transmissive material; and
the second material is less optically transmissive than the first material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method in a first network element for reducing computational andor bandwidth requirements of multicast routing by efficiently communicating required source state information, the method comprising the steps of:
receiving a source interest list from a host over a network, wherein the source interest list identifies at least one multicast source to be one of excluded and included from routing to the host;
identifying by a modified host management protocol a difference between the source interest list and a source state maintained by the first network element, wherein the source state includes at least one of an exclude state that identifies at least one multicast source to exclude from a host and an include state that identifies at least one multicast source to provide to a host;
providing by the host management protocol the difference between the source interest list and the source state and not an entirety of the source interest list to a multicast routing protocol to alter the set of multicast sources to be routed to the host.
2. The method of claim 1, wherein the step of providing comprises the step of:
calling by the modified host management protocol a function or a method of the multicast routing protocol.
3. The method of claim 1, wherein the step of providing comprises the steps of:
generating a message by the modified host management protocol including the difference between the source interest list and the source state; and
transmitting the message by the modified host management protocol from the first network element to a second network element executing the multicast routing protocol.
4. The method of claim 1, wherein the multicast routing protocol is protocol independent multicast\u2014sparse mode, and wherein the source interest list is formatted according to one of an internet group management protocol and a multicast listener discovery protocol.
5. The method of claim 1, further comprising the step of:
identifying whether the source interest list is an exclude list or an include list.
6. The method of claim 1, wherein the source interest list received by the first network element from the host identifies all multicast sources to be one of excluded and included for the host.
7. A network with reduced computational andor bandwidth requirements of multicast routing by efficiently communicating required source state information, the network comprising:
a host device adapted to generate a source interest list based on user input and adapted to transmit the source interest list over a network to a first network element, the source interest list to identify at least one multicast source to be one of excluded and included from routing to the host; and
the first network element in communication with the host device over the network, the first network element adapted to execute a modified host management protocol, the modified host management protocol adapted to identify any differences between the source interest list and a source state maintained by the first network element, wherein the source state includes at least one of an exclude state that identifies at least one multicast source to exclude from a host device and an include state that identifies at least one multicast source to provide to the host device, the host modified management protocol adapted to provide only the difference between the source interest list and the source state and not an entirety of the source interest list to a multicast routing protocol to alter the set of multicast sources to be provided to the host device.
8. The network of claim 7, wherein the first network element includes the multicast routing protocol, and wherein the modified host management protocol calls one of a function or a method of the multicast routing protocol.
9. The network of claim 7, further comprising:
a second network element, which includes the multicast routing protocol, in communication with the first network element over the network, the second network element adapted to receive the difference between the source interest list and the source state and not an entirety of the source interest list from the host management protocol.
10. The network of claim 7, wherein the multicast routing protocol is protocol independent multicast\u2014sparse mode, and wherein the source interest list is formatted according to one of an internet group management protocol and a multicast listener discovery protocol.
11. The network of claim 7, wherein the first network element identifies whether the source interest list is an exclude list or an include list.
12. The network of claim 7, wherein the source interest list received by the first network element from the host device identifies all multicast sources to be one of excluded and included for the host device.
13. A network element to reduce computational andor bandwidth requirements of multicast routing by efficiently communicating required source state information, the network element comprising:
a modified host management protocol component adapted to receive a source interest list from a host over a network, wherein the source interest list identifies at least one multicast source to be one of excluded from or included in routing to the host, the host modified management protocol component adapted to identify any differences between the source interest list and a source state maintained by the modified host management protocol component, wherein the source state includes at least one of an exclude state that identifies at least one multicast source to exclude from a host and an include state that identifies at least one multicast source to provide to the host, the modified host management protocol component adapted to transmit the difference between the source interest list and the source state to a multicast routing protocol to alter the set of multicast sources to be routed to the host.
14. The network element of claim 13, further comprising: the multicast routing protocol, wherein the modified host management protocol component calls one of a method or function of the multicast routing protocol.
15. The network element of claim 13, wherein the modified host management protocol component adapted to generate a message including the difference between the source interest list and the source state and not an entirety of the source interest list, and wherein the host management protocol component is adapted to transmit the message to a router that includes the multicast routing protocol.
16. The network element of claim 13, wherein the multicast routing protocol is protocol independent multicast\u2014sparse mode, and wherein the source interest list is formatted according to one of an internet group management protocol and a multicast listener discovery protocol.
17. The network element of claim 13, wherein the network element identifies whether the source interest list is an exclude list or an include list.
18. The network element of claim 13, wherein the source interest list received by the network element from the host identifies all multicast sources to be one of excluded and included for the host.