1-16. (canceled)
17. A semiconductor laser apparatus comprising:
a first semiconductor laser device having on a first substrate a first semiconductor layer that emits a light beam with a first wavelength; and
a second semiconductor laser device having on a second substrate a second semiconductor layer that emits a light beam with a second wavelength, wherein
said first and second wavelengths are different from each other, and materials of said first and second substrates are different from each other,
said second semiconductor laser device is laminated on said first semiconductor laser device so as not to overlap with a light-beam-emission point of said first semiconductor laser device in a vertical direction to one surface, on which said first semiconductor layer is formed, of said first substrate,
said first semiconductor laser device has a difference in level formed by an upper level surface and a lower level surface, the light-beam-emission point of said first semiconductor layer being arranged below said upper level surface, and
said second semiconductor laser device is laminated on the lower level surface of said first semiconductor laser device.
18. The semiconductor laser apparatus according to claim 17, wherein
said second semiconductor laser device is laminated on said first semiconductor laser device such that said second semiconductor layer side is positioned on said first semiconductor layer side.
19. The semiconductor laser apparatus according to claim 17, wherein
either of said first semiconductor layer and said second semiconductor layer is made of a nitride-based semiconductor.
20. The semiconductor laser apparatus according to claim 17, wherein
said first substrate is an optically transparent substrate.
21. The semiconductor laser apparatus according to claim 17, wherein
Said second semiconductor laser device is laminated on said first semiconductor laser device such that said first semiconductor layer is positioned on said second semiconductor laser device side.
22. The semiconductor laser apparatus according to claim 17, wherein
either of said first semiconductor layer and said second semiconductor layer includes a gallium arsenide-based semiconductor or a gallium indium phosphide-based semiconductor.
23. A semiconductor laser apparatus comprising:
a first semiconductor laser device having on a first substrate a first semiconductor layer that emits a light beam with a first wavelength; and
a second semiconductor laser device having on a second substrate a second semiconductor layer that emits a light beam with a second wavelength, wherein
said first and second wavelengths are different from each other, and materials of said first and second substrates are different from each other,
said second semiconductor laser device is laminated on said first semiconductor laser device so as not to overlap with a light-beam-emission point of said first semiconductor laser device in a vertical direction to one surface, on which said first semiconductor layer is formed, of said first substrate,
a heat dissipator is arranged in contact with a region on said first semiconductor laser device which overlaps with the light-beam-emission point of said first semiconductor layer in the vertical direction to said one surface of said first substrate and a surface of said second semiconductor laser device on the opposite side of said first semiconductor laser device.
24. The semiconductor laser apparatus according to claim 23, wherein
said second semiconductor laser device is laminated on said first semiconductor laser device, so that one surface of said first semiconductor laser device and one surface of said second semiconductor laser device form a difference in level, and
said heat dissipator is provided with a difference in level formed by a first surface in contact with the one surface of said first semiconductor laser device and a second surface in contact with the one surface of said second semiconductor laser device.
25. A semiconductor laser apparatus comprising:
a first semiconductor laser device having on a first substrate a first semiconductor layer that emits a light beam with a first wavelength;
a second semiconductor laser device having on a second substrate a second semiconductor layer that emits a light beam with a second wavelength; and
a third semiconductor laser device having a third semiconductor layer on a third substrate that emits a light beam with a third wavelength, wherein
said first and second wavelengths are different from each other, and materials of said first and second substrates are different from each other,
said second semiconductor laser device is laminated on said first semiconductor laser device so as not to overlap with a light-beam-emission point of said first semiconductor laser device in a vertical direction to one surface, on which said first semiconductor layer is formed, of said first substrate,
said third semiconductor laser device is laminated on said first semiconductor laser device except a region that overlaps with the light-beam-emission point of said first semiconductor laser device in the vertical direction to said one surface of said first substrate.
26. The semiconductor laser apparatus according to claim 25, wherein
said second and said third semiconductor laser devices are laminated on said first semiconductor laser device such that said first semiconductor layer is positioned on said second and said third semiconductor laser devices sides.
27. The semiconductor laser apparatus according to claim 25, wherein
said second semiconductor laser device is laminated on said first semiconductor laser device such that said second semiconductor layer side is positioned on said first semiconductor layer side.
28. The semiconductor laser apparatus according to claim 25, wherein
said third semiconductor laser device is laminated on said first semiconductor laser device such that said third semiconductor layer side is positioned on said first semiconductor layer side.
29. The semiconductor laser apparatus according to claim 25, wherein
said first, said second, and said third wavelengths are different from one another, and said first, said second, and said third semiconductor layers include any of a nitride-based semiconductor, a gallium arsenide-based semiconductor or a gallium indium phosphide-based semiconductor.
30. The semiconductor laser apparatus according to claim 25, wherein
A heat dissipator is arranged in contact with a region on said first semiconductor laser device with overlaps with the light-beam-emission point of said first semiconductor layer, a surface of said second semiconductor laser device on the opposite side of said first semiconductor laser device, and a surface of said third semiconductor laser device on the opposite side of said first semiconductor laser device.
31. A method of fabricating a semiconductor laser apparatus comprising the steps of:
forming on a first substrate a first semiconductor layer such that said first semiconductor layer has a plurality of first light-beam-emission points that emit light beams with a first wavelength;
forming a second semiconductor layer on a second substrate made of a different material from that of said first substrate such that said second semiconductor layer has a plurality of second light-beam-emission points that emit light beams with a second wavelength different from said first wavelength;
bonding said first substrate and said second substrate such that said second semiconductor layer is laminated on said first semiconductor layer;
etching said second substrate and said second semiconductor layer such that regions of said first semiconductor layer above said plurality of first light-beam-emission points become exposed; and
dividing a layered structure of said first semiconductor layer, said second substrate, and said second semiconductor layer into a plurality of semiconductor laser apparatuses.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic toner which internally contains magnetic particles and develops an electrostatic latent image, wherein:
said magnetic particle is of average particle size 0.01 \u03bcm through 0.50 \u03bcm;
said magnetic particle is of octahedron shape that is a convex polyhedron surrounded by eight triangles as a basis, each of vertexes and edges of the octahedron being in a curved surface shape and having a portion that can be taken as a straight line on the outer periphery of a projected image of said octahedron;
a sphericity of said magnetic toner is 0.94 through 0.98; and
a number content of said toner of particle size 0.6 \u03bcm through 2.0 \u03bcm is smaller than 10%.
2. The magnetic toner according to claim 1, wherein a content of said magnetic particle in said magnetic toner is 35 wt. % through 60 wt. %.
3. The magnetic toner according to claim 1, wherein a first shape of said magnetic particle is of octahedron shape that is a convex polyhedron surrounded by eight triangles as a basis, each of vertexes and edges of the octahedron being in a curved surface shape and having a portion that can be taken as a straight line on the outer periphery of a projected image of said octahedron, and a second shape of said magnetic particle is of not-tapered hexahedron or not-tapered octahedron, or tapered hexhedron or tapered octahedron wherein edges are tapered,
wherein: said magnetic particles of said first and second shape are mixed in said magnetic toner; and
a magnetization of said magnetic toner is equal to or greater than 2.0 Am2kg and smaller than 9.0 Am2.kg at a magnetic field 79.6 kAm.
4. An electro-photographic image forming method, using a magnetic toner which internally contains magnetic particles and develops an electrostatic latent image, wherein said magnetic particle is of average particle size 0.01 \u03bcm through 0.50 \u03bcm; said magnetic particle is of octahedron shape that is a convex polyhedron surrounded by eight triangles as a basis, each of vertexes and edges of the octahedron being in a curved surface shape and having a portion that can be taken as a straight line on the outer periphery of a projected image of said octahedron; a sphericity of said magnetic toner is 0.94 through 0.98; and a number content of said toner of particle size 0.6 \u03bcm through 2.0 \u03bcm is smaller than 10%, which comprises the steps of:
retaining magnetic toners on a rotating toner retaining member wherein magnets are fixed;
facing said developer retaining member, at a gap, against a latent image retaining member which is an a-silicon photoreceptor; and
flying said magnetic toners toward said latent image retaining member, thereby developing said latent image.