1460743266-5cfe5389-c014-4dfc-9248-08f252325dec

1. Bicycle lock for blocking rotation of the crankshaft of a bicycle, the bicycle lock being provided at the bottom in a saddle tube of the bicycle close to the crankshaft, the bicycle lock comprising
a lock housing accommodating a locking pin and a locking mechanism, the locking mechanism being adapted to be operated by a key to be inserted through a hole in the saddle tube, the locking mechanism being adapted to fix the locking pin in either of two positions, wherein the locking pin in an upper position thereof releases the crankshaft and in a lower position thereof blocks the crankshaft, an end of the locking pin in the lower position thereof engaging a matching notch in the crankshaft,
the lock housing being coupled to the saddle tube by a rotating coupling, the locking pin in the lower position thereof having a nonrotable engagement with said matching notch, thus blocking rotation of the lock housing and preventing it from being removed from the saddle tube.
2. Bicycle lock according to claim 1, wherein the A rotary coupling is a threaded connection.
3. Bicycle lock according to claim 1, wherein the rotary coupling is a bayonet connection.
4. Bicycle lock according to claim 1, wherein the lock housing is fitted in the saddle tube by means of a V-groove connection.
5. Bicycle lock according to claim 1, wherein the locking pin has an eccentric position in the lock housing.
6. Bicycle lock according to claim 5, wherein the lower end of the locking pin is cylinder-shaped and catches in a cylinder-shaped notch in the crankshaft.
7. Bicycle lock according to claim 1, wherein the section of the lower end of the locking pin is trapezium-shaped.
8. Bicycle lock according to claim 1, wherein the section of the lower end of the locking pin is rectangular.
9. Bicycle lock according to claim 8, wherein the section of the lower end of the locking pin is square.
10. Bicycle lock according to claim 1, wherein the section of the lower end of the locking pin is hexagonal.
11. Bicycle lock according to claim 1, wherein the locking pin comprises two parts which are coupled to each other through a spring element.
12. Bicycle lock according to claim 1, wherein the lock mechanism is a cross lock.
13. Bicycle lock according to claim 1, wherein the lock mechanism is a cylinder lock.
14. Bicycle lock according to claim 1, wherein the bicycle lock also includes a catch system for fitting a cable bicycle lock.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of depositing an organic coating on a substrate from a vapor phase organic-comprising precursor, wherein said substrate surface upon which said organic coating is applied is a halogenated surface produced by treatment of said substrate with a vaporous, halogen-containing compound in a process chamber under vacuum conditions ranging from about 1 mTorr to about 10 Torr, at a temperature ranging from about 25\xb0 C. to about 100\xb0 C., wherein said organic-comprising precursor contains at least one nucleophilic functional group which reacts with said halogenated surface to attach an organic coating to said surface, and wherein said organic-comprising precursor is charged to said processing chamber in measured quantities using batch-like charging procedures, whereby a particularly uniform growth of the coating on the surface is achieved.
2. A method in accordance with claim 1, wherein a density of reactive halogen sites on said halogenated surface is controlled by controlling an amount of said vaporous halogen-containing compound contacted with said substrate surface in said process chamber under vacuum conditions.
3. (canceled)
4. A method in accordance with claim 1, wherein process chamber pressure ranges from about 10 mTorr to about 1 Torr.
5. A method in accordance with claim 1 or claim 2, wherein said vaporous halogen-containing compound contains chlorine.
6. A method in accordance with claim 1 or claim 2, wherein said vaporous halogen-containing compound is selected from the group consisting of chlorosilanes, chlorosiloxanes, fluorosilanes, fluorosiloxanes and combinations thereof.
7. A method in accordance with claim 6, wherein said halogen-containing compound is a chlorine-containing compound.
8. A method in accordance with claim 1 or claim 2, wherein water is added to said processing chamber for use in combination with said halogen-containing compound, to provide said halogenated surface.
9. A method in accordance with claim 8, wherein an amount of water added to said processing chamber is used to control a density of said reactive halogen-containing sites on said halogenated surface.
10. A method in accordance with claim 1, wherein said treatment of said surface with said halogen-containing compound is carried out using a plurality of treatment cycles, and wherein each cycle includes batch-like charging of a nominal amount of said halogen-containing compound, and reaction of said halogen containing compound with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.
11. A method in accordance with claim 8, wherein said treatment of said surface with said halogen-containing compound and water is carried out using a plurality of treatment cycles, and wherein each cycle includes batch-like charging of a nominal amount of said halogen-containing compound, batch-like charging of a nominal amount of said water, and reaction of said halogen containing compound and said water with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.
12. A method in accordance with claim 8, wherein said halogen-containing compound is SiCl4, and wherein a ratio of water vapor partial pressure to SiCl4 vapor pressure in a process chamber in which the substrate surface is treated is less than 1:4.
13. A method in accordance with claim 1, wherein a total pressure in said process chamber in which said vaporous halogen-containing compound treatment is carried out is in the range of about 1 Torr to about 3 Torr.
14. (canceled)
15. A method in accordance with claim 1, wherein said temperature ranges from about 25\xb0 C. to about 60\xb0 C.
16. A method in accordance with claim 1 or claim 2, wherein said organic-comprising precursor is selected from the group consisting of organic compounds having the formula RNH2 or ROH; organic compounds including \u2550NH, \u2014SH, \u2014SeH, \u2014TeH and \u2014PH2 functional groups; alkyl-lithium compounds, RLi; Alkyl-Grignard reagents, RMgX; and Gilman reagents, R\u2014{2}CuLi; wherein R is an organic radical.
17. A method in accordance with claim 1 or claim 2, wherein subsequent to halogenation of said substrate surface and prior to reaction of said halogenated substrate surface with said organic-comprising compound, said halogenated substrate surface is isolated from contact with moisture and other contaminants which affect the reaction product of said halogenated substrate surface with said organic-comprising compound.
18. A method in accordance with claim 17, wherein said isolation is achieved by carrying out said halogenation of said substrate surface and said subsequent reaction of said halogenated surface with said organic-comprising compound in the same process chamber without removing said substrate from said process chamber.
19. A method of attaching an organic coating to a surface of a substrate at a controlled density upon said substrate, comprising:
a) treatment of said substrate with a vaporous, halogen-containing compound which is charged to a processing chamber in precisely measured quantities using batch-like charging procedures, wherein said substrate is at a temperature ranging from about 25\xb0 C. to about 100\xb0 C. and said processing chamber is at a pressure ranging from about 1 Torr to about 5 Torr, whereby halogen species are attached to a surface of said substrate; and
b) reacting a vapor phase organic-comprising precursor containing at least one nucleophilic functional group with said attached halogen species in said processing chamber, wherein said substrate is at a temperature ranging from about 25\xb0 C. to about 100\xb0 C. and said processing chamber is at a pressure ranging from about 0.1 Torr to about 10 Torr.
20. A method in accordance with claim 19, wherein said reacting is by covalent bonding.
21. A method in accordance with claim 19, wherein said controlled density of said organic coating is controlled by a density of said halogen species attached to said substrate surface, and wherein a density of attachment of said halogen species is controlled by an amount of a vaporous halogen-containing compound which is contacted with said substrate surface in said process chamber under vacuum conditions.
22. A method in accordance with claim 21, wherein the density of attachment of said halogen species is also controlled by an amount of water added to said processing chamber either prior to or during attachment of said halogen species.
23. A method in accordance with claim 21, wherein said treatment of said surface with said halogen-containing compound is carried out using a plurality of treatment cycles, and wherein each cycle includes said batch-like charging of a nominal amount of said halogen-containing compound, and reaction of said halogen containing compound with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.
24. A method in accordance with claim 22, wherein said treatment of said surface with said halogen-containing compound and water is carried out using a plurality of treatment cycles, and wherein each cycle includes: said batch-like charging of a nominal amount of said halogen-containing compound and batch-like charging of a nominal amount of said water, and reaction of said halogen containing compound and water with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof
25. A method in accordance with claim 24, wherein said halogen-containing compound is SiCl4, and wherein a ratio of water vapor partial pressure to SiCl4 vapor pressure is less than 1:4.
26. A method in accordance with claim 1, wherein said halogen-containing compound is selected from the group consisting of SiCl4, Si2OCl6, SnCl2, PCl5, SOCl2, and combinations thereof.