1. A method of forming a layer on a substrate, the method comprising:
contacting a precursor composition with a surface of a substrate, wherein the precursor composition comprises one or more complexes of the formula:
LyRhYz,
wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; with the proviso that L is not cyclopentadienyl when Y is CO;
y=1 to 4; and
z=1 to 4.
2. The method of claim 1 wherein the method forms a rhodium-containing layer on the surface of the substrate.
3. The method of claim 2 wherein the rhodium-containing layer is a single transition metal or alloy layer.
4. The method of claim 1 wherein the substrate is a semiconductor substrate or substrate assembly.
5. The method of claim 4 wherein the semiconductor substrate comprises a silicon wafer or a gallium arsenide wafer.
6. The method of claim 1 wherein contacting further comprises vaporizing the precursor composition.
7. The method of claim 6 wherein vaporizing comprises vaporizing in the presence of an inert carrier gas.
8. The method of claim 6 wherein contacting further comprises directing the vaporized precursor composition toward the surface of the substrate using a chemical vapor deposition technique.
9. The method of claim 8 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
10. A method of forming a layer on a substrate, the method comprising:
directing a precursor composition toward a surface of a substrate; and
directing a nonhydrogen reaction gas toward the surface of the substrate,
wherein the precursor composition comprises one or more complexes of the formula:
LyRhYz,
wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; with the proviso that L is not cyclopentadienyl when Y is CO;
y=1 to 4; and
z=1 to 4.
11. The method of claim 10 wherein the nonhydrogen reaction gas is an oxidizing gas selected from the group of organic peroxides, O2, O3, SO3, H2O, H2O2, nitrogen oxides, RuO4, and combinations thereof.
12. The method of claim 10 wherein the nonhydrogen reaction gas is a reducing gas selected from the group of NH3, N2H4, and combinations thereof.
13. The method of claim 10 wherein the nonhydrogen reaction gas is selected from the group of SiH4, Si2H6, H2S, H2Se, H2Te, and combinations thereof.
14. A method of manufacturing a semiconductor structure, the method comprising:
directing a vapor of a precursor composition toward a surface of a semiconductor substrate or substrate assembly; and
directing a nonhydrogen reaction gas toward the surface of the semiconductor substrate or substrate assembly,
wherein the precursor composition comprises one or more complexes of the formula:
LyRhYz,
wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; with the proviso that L is not cyclopentadienyl when Y is CO;
y=1 to 4; and
z=1 to 4.
15. The method of claim 14 wherein each R group is a C1-C8 organic group.
16. The method of claim 14 wherein z=1 to 4.
17. The method of claim 14 wherein the precursor composition is a liquid.
18. The method of claim 17 wherein the liquid precursor composition comprises a solid dissolved in a solvent.
19. A chemical vapor deposition apparatus comprising:
a deposition chamber having a substrate positioned therein;
a vessel containing a precursor composition comprising one or more complexes of the formula:
LyRhYz,
wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=0 to 4;
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber; and
a source of a nonhydrogen reaction gas.
20. A chemical vapor deposition system comprising:
a deposition chamber; and
a vessel containing a precursor composition comprising one or more complexes of the formula:
LyRhYz,
wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=0 to 4.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fan coil thermostat adapted for use with a fan coil system comprising a fan having a low fan speed, a medium fan speed and a high fan speed, the fan coil thermostat comprising:
a housing for housing:
a temperature sensor configured to measure a current temperature;
a user interface comprising:
a display;
an up button and a down button that permit a user to enter a temperature set point;
a fan button, that when pressed, steps through the low fan speed, the medium fan speed and the high fan speed for manual selection of a fan speed when in a manual fan speed mode;
a controller configured to implement a control algorithm that calculates a temperature difference TERR between the current temperature measured by the temperature sensor and the temperature set point, and further calculates a control error CERR, wherein the control error CERR comprises a proportional term
Kp*(TERR)
and an integral term
Kp
Ti
\u2062
\u222b
0
t
\u2062
(
T
ERR
)
\u2062
\u2146
t
,
where t is time, Kp is a constant representing gain and Ti is a time constant;
wherein the controller, in an automatic fan speed mode:
operates the fan at the low fan speed if the control error CERR is below a first threshold;
operates the fan at the medium fan speed if the control error CERR is above the first threshold but below a second threshold; and
operates the fan at the high fan speed if the control error CERR is above the second threshold; and
wherein the control algorithm also implements a degree of hysteresis based on the control error CERR when switching between the low and the medium fan speeds, and when switching between the medium and the high fan speeds.
2. The fan coil thermostat of claim 1, wherein the control error CERR is scaled by the gain Kp to fall along a throttle range, wherein the throttle range is configured to represent a temperature difference at which the controller would instruct the fan to operate at a maximum speed.
3. A fan coil system, comprising:
a fan coil configured for fluid communication with a source of heated fluid or a source of cooled fluid;
a valve that controls fluid flow through the fan coil;
a fan that blows air across the fan coil, the fan having a plurality of discrete fan speeds;
a fan coil thermostat, the fan coil thermostat comprising:
a user interface comprising:
a display;
an up button and a down button that permit a user to enter a temperature set point;
a fan button, that when pressed, steps through the plurality of discrete fan speeds for manual selection of a fan speed when in a manual fan speed mode; and
a controller implementing a control algorithm that calculates a temperature difference between a current temperature and a temperature set point and calculates an error value comprising a proportional term related to the temperature difference and a gain constant Kp, and an integral term related to the temperature difference, a time constant Ti and the gain constant Kp;
wherein the controller, in an automatic fan speed mode, runs the fan at a fan speed selected from the plurality of discrete fan speeds in accordance with the calculated error value, and the controller algorithm implements hysteresis based upon the error value when switching between the plurality of discrete fan speeds.
4. The fan coil system of claim 3, wherein the plurality of fan speeds comprises a low fan speed, a medium fan speed and a high fan speed.
5. The fan coil system of claim 4, wherein the controller operates the fan at the low fan speed if the error value is below a first threshold, the medium fan speed if the error value is above the first threshold but below a second threshold, or the high fan speed if the error value is above the second threshold, subject to the hysteresis of the control algorithm.
6. The fan coil system of claim 3, wherein the controller runs the fan at a speed selected from the plurality of discrete fan speeds in accordance with the calculated error value when the valve is open so that fluid flows through the fan coil, but does not run the fan when the valve is closed.
7. A method of operating a fan coil system comprising a fan coil accommodating fluid flow therethrough and a fan adapted to blow air across the fan coil, the fan coil system having a temperature set point, the fan having a plurality of fan speeds, the method comprising the steps of:
obtaining a current temperature value;
comparing the current temperature value with the temperature set point to determine a temperature difference TERR;
calculating a control error CERR comprising a proportional term related to the temperature difference TERR and a gain constant Kp, and an integral term related to the temperature difference TERR, a time constant Ti and the gain constant Kp;
in a manual fan speed mode, accepting an input via a single fan speed button to step through the plurality of fan speeds for manual selection of a manually selected fan speed, and operating the fan at the manually selected fan speed;
in an automatic fan speed mode, selecting a fan speed based at least in part on where the control error CERR falls relative to a first threshold and a second threshold, and operating the fan at the selected fan speed while providing a degree of hysteresis based on the control error CERR when switching between fan speeds.
8. The method of claim 7, wherein a low fan speed is selected when the control error CERR is below the first threshold.
9. The method of claim 8, wherein a medium fan speed is selected when the control error CERR is above the first threshold but below the second threshold.
10. The method of claim 9, wherein a high fan speed is selected when the control error CERR is above the second threshold.
11. The method of claim 7, further comprising controlling fluid flow through the fan coil in accordance with the temperature set point.
12. The method of claim 11, wherein the controller runs the fan at a speed selected from the plurality of fan speeds based at least in part on the control error CERR when fluid flows through the fan coil, but does not run the fan when fluid does not flow through the fan coil.