1. A heteroleptic organometallic compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are selected from hydrogen, a substituted or unsubstituted, saturated or unsaturated, aliphatic hydrocarbon, aromatic hydrocarbon, cycloaliphatic hydrocarbon, aliphatic heteroatom-containing group, aromatic heterocycle, cycloaliphatic heterocycle, or mixtures thereof; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; wherein said heteroleptic organometallic compound is a liquid at 20\xb0 C.
2. The heteroleptic organometallic compound of claim 1 represented by the formula (R4R3N)xM(NR1R2)y wherein M is a metal or metalloid; NR1R2 and NR3R4 are different; R1 and R2 are the same or different and are a hydrocarbon group or a heteroatom-containing group; R1 and R2 can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R1 or R2 of one NR1R2 group can be combined with R1 or R2 of another NR1R2 group, or with R3 or R4 of a NR3R4 group, to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R3 and R4 are the same or different and are a hydrocarbon group or a heteroatom-containing group; R3 and R4 can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R3 or R4 of one NR3R4 group can be combined with R3 or R4 of another NR3R4 group, or with R1 or R2 of a NR1R2 group, to form a substituted or unsubstituted, saturated or unsaturated cyclic group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) NR3R4 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) NR1R2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) NR3R4 and NR1R2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M.
3. The heteroleptic organometallic compound of claim 1 wherein M is selected from a Group 2 element, a Group 4 element, a Group 13 element, a Group 14 element, a transition metal, a lanthanide series element or an actinide series element.
4. The heteroleptic organometallic compound of claim 1 wherein M is selected from Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Sr, Ba, Sc, Y, Al, Ge, Ga, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
5. The heteroleptic organometallic compound of claim 1 wherein L1 and L2 are different and are independently selected from hydrogen, alkyl, alkyl halide, silylated hydrocarbon, ether, polyether, thioether, ester, lactone, amide, amine, polyamine, nitrile, or mixtures thereof.
6. The heteroleptic organometallic compound of claim 1 wherein L1 and L2 are different and are independently selected from a substituted or unsubstituted, saturated or unsaturated, cyclic amido or amino group comprising aziridinyl, azetidinyl, pyrrolidinyl, thiazolidinyl, piperidinyl, pyrrolyl, pyridinyl, pyrimidinyl, pyrrolinyl, pyrazolyl, thiazolyl, oxazolyl, imidazolyl, imidazolidinonyl, imidazolidinethionyl, quinolinyl, isoquinolinyl, carbazolyl, triazolyl, indolyl and purinyl; or wherein L1 and L2 are different and are independently selected from dimethylamide, ethylmethylamide, diethylamide, isopropylmethylamide, diisopropylamide, di-tert-amylamide, tert-butylisopropylamide, di-tert-butylamide, dicyclohexylamide, tert-butyltrimethylsilylamide, diethyltetramethyldisilazane (amide), hexamethyldisilazane (amide), and t-butoxide.
7. The heteroleptic organometallic compound of claim 1 wherein, when x is a value greater than 1, each L1 group is the same or different; or wherein, when y is a value greater than 1, each L2 group is the same or different.
8. The heteroleptic organometallic compound of claim 2 wherein R1, R2, R3 and R4 are the same or different and are independently selected from hydrogen, a substituted or unsubstituted, saturated or unsaturated, aliphatic hydrocarbon, aromatic hydrocarbon, or cycloaliphatic hydrocarbon, provided NR1R2 and NR3R4 are different.
9. The heteroleptic organometallic compound of claim 2 wherein R1, R2, R3 and R4 are the same or different and are independently selected from hydrogen, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, tert-amyl, cyclohexyl, adamantyl, phenyl, benzyl, silyl, dimethylsilyl, diethylsilyl, trimethylsilyl, triethylsilyl, dimethylethylsilyl, or diethylmethylsilyl, provided NR1R2 and NR3R4 are different; or wherein R1, R2, R3 and R4 are the same or different and are independently selected from hydrogen or substituted or unsubstituted alkyl, provided NR1R2 and NR3R4 are different.
10. The heteroleptic organometallic compound of claim 1 in which L1 has a steric bulk equal to or greater than the steric bulk of diisopropylamide, or in which L2 has a steric bulk equal to or less than the steric bulk of diisopropylamide.
11. The heteroleptic organometallic compound of claim 2 in which NR3R4 has a steric bulk equal to or greater than the steric bulk of diisopropylamide, or in which NR1R2 has a steric bulk equal to or less than the steric bulk of diisopropylamide.
12. The heteroleptic organometallic compound of claim 1 selected from amides, cyclopentadienides, halides, beta-diketonates, alkyls, and carbonyls.
13. The heteroleptic organometallic compound of claim 1 selected from bis(diisopropylamino)bis(dimethylamino)hafnium, bis(diisopropylamino)bis(dimethylamino)zirconium, bis(diisopropylamino)bis(dimethylamino)titanium, bis(diisopropylamino)bis(dimethylamino)molybdenum, bis(diisopropylamino)bis(dimethylamino)tungsten, bis(di-t-butylamino)bis(dimethylamino)hafnium, bis(di-t-butylamino)bis(dimethylamino)zirconium, bis(di-t-butylamino)bis(dimethylamino)titanium, bis(di-t-butylamino)bis(dimethylamino)molybdenum, bis(di-t-butylamino)bis(dimethylamino)tungsten, bis(ethylmethylamino)bis(diisopropylamino)hafnium bis(ethylmethylamino)bis(diisopropylamino)zirconium, bis(ethylmethylamino)bis(diisopropylamino)titanium, bis(ethylmethylamino)bis(diisopropylamino)molybdenum, bis(ethylmethylamino)bis(diisopropylamino)tungsten, bis(diethylamino)bis(diisopropylamino)hafnium bis(diethylamino)bis(diisopropylamino)zirconium, bis(diethylamino)bis(diisopropylamino)titanium, bis(diethylamino)bis(diisopropylamino)molybdenum, bis(diethylamino)bis(diisopropylamino)tungsten, tris(diisopropylamino)(dimethylamino)hafnium tris(diisopropylamino)(dimethylamino)zirconium, tris(diisopropylamino)(dimethylamino)titanium, tris(diisopropylamino)(dimethylamino)molybdenum, tris(diisopropylamino)(dimethylamino)tungsten, tris(diethylamino)(diisopropylamino)hafnium, tris(diethylamino)(diisopropylamino)zirconium, tris(diethylamino)(diisopropylamino)titanium, tris(diethylamino)(diisopropylamino)molybdenum, tris(diethylamino)(diisopropylamino)tungsten, bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)zirconium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)titanium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)molybdenum, bis(dimethylamino)bis(bis(trimethylsilyl)amino)tungsten, tris(dimethylamino)(bis(trimethylsilyl)amino)hafnium, tris(dimethylamino)(bis(trimethylsilyl)amino)zirconium, tris(dimethylamino)(bis(trimethylsilyl)amino)titanium, tris(dimethylamino)(bis(trimethylsilyl)amino)molybdenum, tris(dimethylamino)(bis(trimethylsilyl)amino)tungsten, tris(diethylamino)(dimethylamino)silane, bis(diisopropylamino)bis(dimethylamino)silane, (t-butylimino)diisopropylaminobis(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)niobium, (di-t-butylamino)bis(bis(trimethylsilyl)amino)lanthanum, and di-t-buylamino)bis(cyclopentadienyl)lanthanum.
14. A process for the production of a heteroleptic organometallic compound comprising reacting a homoleptic organometallic compound with a hydrocarbon compound or a heteroatom-containing compound in the presence of a solvent and under reaction conditions sufficient to produce said heteroleptic organometallic compound, wherein said heteroleptic organometallic compound is represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M.
15. The process of claim 14 wherein the homoleptic organometallic compound is selected from amides, cyclopentadienides, halides, beta-diketonates, alkyls, and carbonyls.
16. The process of claim 14 wherein the homoleptic organometallic compound is selected from tetrakis(dimethylamino)hafnium, tetrakis(dimethylamino)zirconium, tetrakis(dimethylamino)titanium, tetrakis(dimethylamino)molybdenum, tetrakis(dimethylamino)tungsten, tetrakis(diethylamino)hafnium, tetrakis(diethylamino)zirconium, tetrakis(diethylamino)titanium, tetrakis(diethylamino)molybdenum, tetrakis(diethylamino)tungsten, pentakis(dimethylamino)tantalum, pentakis(dimethylamino)niobium, and tris(bis(trimethylsilyl)amino)lanthanum; and the hydrocarbon compound or heteroatom-containing compound is selected from dimethylamide, ethylmethylamide, diethylamide, isopropylmethylamide, diisopropylamide, di-tert-amylamide, tert-butylisopropylamide, di-tert-butylamide, dicyclohexylamide, tert-butyltrimethylsilylamide, diethyltetramethyldisilazane (amide), hexamethyldisilazane (amide), t-butoxide, cyclopentadienide, methylcyclopentadienide, tetramethylcyclopentadienide, pyrrolides, 2,5-dimethylpyrrolide, carbon monoxide, and chlorides.
17. The process of claim 14 in which the heteroleptic organometallic compound is selected from bis(diisopropylamino)bis(dimethylamino)hafnium, bis(diisopropylamino)bis(dimethylamino)zirconium, bis(diisopropylamino)bis(dimethylamino)titanium, bis(diisopropylamino)bis(dimethylamino)molybdenum, bis(diisopropylamino)bis(dimethylamino)tungsten, bis(di-t-butylamino)bis(dimethylamino)hafnium, bis(di-t-butylamino)bis(dimethylamino)zirconium, bis(di-t-butylamino)bis(dimethylamino)titanium, bis(di-t-butylamino)bis(dimethylamino)molybdenum, bis(di-t-butylamino)bis(dimethylamino)tungsten, bis(ethylmethylamino)bis(diisopropylamino)hafnium bis(ethylmethylamino)bis(diisopropylamino)zirconium, bis(ethylmethylamino)bis(diisopropylamino)titanium, bis(ethylmethylamino)bis(diisopropylamino)molybdenum, bis(ethylmethylamino)bis(diisopropylamino)tungsten, bis(diethylamino)bis(diisopropylamino)hafnium bis(diethylamino)bis(diisopropylamino)zirconium, bis(diethylamino)bis(diisopropylamino)titanium, bis(diethylamino)bis(diisopropylamino)molybdenum, bis(diethylamino)bis(diisopropylamino)tungsten, tris(diisopropylamino)(dimethylamino)hafnium tris(diisopropylamino)(dimethylamino)zirconium, tris(diisopropylamino)(dimethylamino)titanium, tris(diisopropylamino)(dimethylamino)molybdenum, tris(diisopropylamino)(dimethylamino)tungsten, tris(diethylamino)(diisopropylamino)hafnium, tris(diethylamino)(diisopropylamino)zirconium, tris(diethylamino)(diisopropylamino)titanium, tris(diethylamino)(diisopropylamino)molybdenum, tris(diethylamino)(diisopropylamino)tungsten, bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)zirconium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)titanium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)molybdenum, bis(dimethylamino)bis(bis(trimethylsilyl)amino)tungsten, tris(dimethylamino)(bis(trimethylsilyl)amino)hafnium, tris(dimethylamino)(bis(trimethylsilyl)amino)zirconium, tris(dimethylamino)(bis(trimethylsilyl)amino)titanium, tris(dimethylamino)(bis(trimethylsilyl)amino)molybdenum, tris(dimethylamino)(bis(trimethylsilyl)amino)tungsten, tris(diethylamino)(dimethylamino)silane, bis(diisopropylamino)bis(dimethylamino)silane, (t-butylimino)diisopropylaminobis(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)niobium, (di-t-butylamino)bis(bis(trimethylsilyl)amino)lanthanum, and di-t-buylamino)bis(cyclopentadienyl)lanthanum.
18. The process of claim 14 wherein the heteroleptic organometallic compound yield is 60% or greater.
19. A method for producing a film, coating or powder by decomposing a heteroleptic organometallic precursor compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are selected from hydrogen, a substituted or unsubstituted, saturated or unsaturated, aliphatic hydrocarbon, aromatic hydrocarbon, cycloaliphatic hydrocarbon, aliphatic heteroatom-containing group, aromatic heterocycle, cycloaliphatic heterocycle, or mixtures thereof; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; wherein said heteroleptic organometallic precursor compound is a liquid at 20\xb0 C.; thereby producing the film, coating or powder.
20. The method of claim 19 wherein the decomposing of said heteroleptic organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.
21. The method of claim 19 wherein said heteroleptic organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.
22. The method of claim 21 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a metal aluminate, a semiconductor, an insulator and a barrier material.
23. The method of claim 21 wherein said substrate is a patterned wafer.
24. The method of claim 19 wherein said film, coating or powder is produced by a gas phase deposition.
25. The method of claim 19 wherein said film, coating or powder is produced by a chemical vapor deposition or atomic layer deposition.
26. A mixture comprising (a) a heteroleptic organometallic precursor compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are selected from hydrogen, a substituted or unsubstituted, saturated or unsaturated, aliphatic hydrocarbon, aromatic hydrocarbon, cycloaliphatic hydrocarbon, aliphatic heteroatom-containing group, aromatic heterocycle, cycloaliphatic heterocycle, or mixtures thereof; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; wherein said heteroleptic organometallic precursor compound is a liquid at 20\xb0 C., and (b) one or more different organometallic precursor compounds.
27. The mixture of claim 26 wherein said one or more other organometallic precursor compounds are selected from a homoleptic organometallic precursor compound or a heteroleptic organometallic precursor compound.
28. The mixture of claim 26 wherein said one or more other organometallic precursor compounds are selected from a hafnium-containing, aluminum-containing, strontium-containing, barium-containing, or titanium-containing organometallic precursor compound.
29. A heteroleptic organometallic compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are independently selected from a substituted or unsubstituted, saturated or unsaturated, cyclic amido or amino group comprising aziridinyl, azetidinyl, pyrrolidinyl, thiazolidinyl, piperidinyl, pyrrolyl, pyridinyl, pyrimidinyl, pyrrolinyl, pyrazolyl, thiazolyl, oxazolyl, imidazolyl, imidazolidinonyl, imidazolidinethionyl, quinolinyl, isoquinolinyl, carbazolyl, triazolyl, indolyl and purinyl; or wherein L1 and L2 are different and are independently selected from dimethylamide, ethylmethylamide, diethylamide, isopropylmethylamide, diisopropylamide, di-tert-amylamide, tert-butylisopropylamide, di-tert-butylamide, dicyclohexylamide, tert-butyltrimethylsilylamide, diethyltetramethyldisilazane (amide), hexamethyldisilazane (amide), and t-butoxide; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M.
30. A heteroleptic organometallic compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; wherein said heteroleptic organometallic compound is selected from bis(diisopropylamino)bis(dimethylamino)hafnium, bis(diisopropylamino)bis(dimethylamino)zirconium, bis(diisopropylamino)bis(dimethylamino)titanium, bis(diisopropylamino)bis(dimethylamino)molybdenum, bis(diisopropylamino)bis(dimethylamino)tungsten, bis(di-t-butylamino)bis(dimethylamino)hafnium, bis(di-t-butylamino)bis(dimethylamino)zirconium, bis(di-t-butylamino)bis(dimethylamino)titanium, bis(di-t-butylamino)bis(dimethylamino)molybdenum, bis(di-t-butylamino)bis(dimethylamino)tungsten, bis(ethylmethylamino)bis(diisopropylamino)hafnium bis(ethylmethylamino)bis(diisopropylamino)zirconium, bis(ethylmethylamino)bis(diisopropylamino)titanium, bis(ethylmethylamino)bis(diisopropylamino)molybdenum, bis(ethylmethylamino)bis(diisopropylamino)tungsten, bis(diethylamino)bis(diisopropylamino)hafnium bis(diethylamino)bis(diisopropylamino)zirconium, bis(diethylamino)bis(diisopropylamino)titanium, bis(diethylamino)bis(diisopropylamino)molybdenum, bis(diethylamino)bis(diisopropylamino)tungsten, tris(diisopropylamino)(dimethylamino)hafnium tris(diisopropylamino)(dimethylamino)zirconium, tris(diisopropylamino)(dimethylamino)titanium, tris(diisopropylamino)(dimethylamino)molybdenum, tris(diisopropylamino)(dimethylamino)tungsten, tris(diethylamino)(diisopropylamino)hafnium, tris(diethylamino)(diisopropylamino)zirconium, tris(diethylamino)(diisopropylamino)titanium, tris(diethylamino)(diisopropylamino)molybdenum, tris(diethylamino)(diisopropylamino)tungsten, bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)zirconium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)titanium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)molybdenum, bis(dimethylamino)bis(bis(trimethylsilyl)amino)tungsten, tris(dimethylamino)(bis(trimethylsilyl)amino)hafnium, tris(dimethylamino)(bis(trimethylsilyl)amino)zirconium, tris(dimethylamino)(bis(trimethylsilyl)amino)titanium, tris(dimethylamino)(bis(trimethylsilyl)amino)molybdenum, tris(dimethylamino)(bis(trimethylsilyl)amino)tungsten, tris(diethylamino)(dimethylamino)silane, bis(diisopropylamino)bis(dimethylamino)silane, (t-butylimino)diisopropylaminobis(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)niobium, (di-t-butylamino)bis(bis(trimethylsilyl)amino)lanthanum, and di-t-buylamino)bis(cyclopentadienyl)lanthanum.
31. A method for producing a film, coating or powder by decomposing a heteroleptic organometallic precursor compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are independently selected from a substituted or unsubstituted, saturated or unsaturated, cyclic amido or amino group comprising aziridinyl, azetidinyl, pyrrolidinyl, thiazolidinyl, piperidinyl, pyrrolyl, pyridinyl, pyrimidinyl, pyrrolinyl, pyrazolyl, thiazolyl, oxazolyl, imidazolyl, imidazolidinonyl, imidazolidinethionyl, quinolinyl, isoquinolinyl, carbazolyl, triazolyl, indolyl and purinyl; or wherein L1 and L2 are different and are independently selected from dimethylamide, ethylmethylamide, diethylamide, isopropylmethylamide, diisopropylamide, di-tert-amylamide, tert-butylisopropylamide, di-tert-butylamide, dicyclohexylamide, tert-butyltrimethylsilylamide, diethyltetramethyldisilazane (amide), hexamethyldisilazane (amide), and t-butoxide; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; thereby producing the film, coating or powder.
32. A method for producing a film, coating or powder by decomposing a heteroleptic organometallic precursor compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; thereby producing the film, coating or powder; wherein said heteroleptic organometallic precursor compound is selected from bis(diisopropylamino)bis(dimethylamino)hafnium, bis(diisopropylamino)bis(dimethylamino)zirconium, bis(diisopropylamino)bis(dimethylamino)titanium, bis(diisopropylamino)bis(dimethylamino)molybdenum, bis(diisopropylamino)bis(dimethylamino)tungsten, bis(di-t-butylamino)bis(dimethylamino)hafnium, bis(di-t-butylamino)bis(dimethylamino)zirconium, bis(di-t-butylamino)bis(dimethylamino)titanium, bis(di-t-butylamino)bis(dimethylamino)molybdenum, bis(di-t-butylamino)bis(dimethylamino)tungsten, bis(ethylmethylamino)bis(diisopropylamino)hafnium bis(ethylmethylamino)bis(diisopropylamino)zirconium, bis(ethylmethylamino)bis(diisopropylamino)titanium, bis(ethylmethylamino)bis(diisopropylamino)molybdenum, bis(ethylmethylamino)bis(diisopropylamino)tungsten, bis(diethylamino)bis(diisopropylamino)hafnium bis(diethylamino)bis(diisopropylamino)zirconium, bis(diethylamino)bis(diisopropylamino)titanium, bis(diethylamino)bis(diisopropylamino)molybdenum, bis(diethylamino)bis(diisopropylamino)tungsten, tris(diisopropylamino)(dimethylamino)hafnium tris(diisopropylamino)(dimethylamino)zirconium, tris(diisopropylamino)(dimethylamino)titanium, tris(diisopropylamino)(dimethylamino)molybdenum, tris(diisopropylamino)(dimethylamino)tungsten, tris(diethylamino)(diisopropylamino)hafnium, tris(diethylamino)(diisopropylamino)zirconium, tris(diethylamino)(diisopropylamino)titanium, tris(diethylamino)(diisopropylamino)molybdenum, tris(diethylamino)(diisopropylamino)tungsten, bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)zirconium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)titanium, bis(dimethylamino)bis(bis(trimethylsilyl)amino)molybdenum, bis(dimethylamino)bis(bis(trimethylsilyl)amino)tungsten, tris(dimethylamino)(bis(trimethylsilyl)amino)hafnium, tris(dimethylamino)(bis(trimethylsilyl)amino)zirconium, tris(dimethylamino)(bis(trimethylsilyl)amino)titanium, tris(dimethylamino)(bis(trimethylsilyl)amino)molybdenum, tris(dimethylamino)(bis(trimethylsilyl)amino)tungsten, tris(diethylamino)(dimethylamino)silane, bis(diisopropylamino)bis(dimethylamino)silane, (t-butylimino)diisopropylaminobis(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)tantalum, bis(diisopropylamino)tris(dimethylamino)niobium, (di-t-butylamino)bis(bis(trimethylsilyl)amino)lanthanum, and di-t-buylamino)bis(cyclopentadienyl)lanthanum.
33. A mixture comprising (a) a heteroleptic organometallic precursor compound represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M, and (b) one or more different organometallic precursor compounds selected from a homoleptic organometallic precursor compound or a heteroleptic organometallic precursor compound.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A stirring tool for preparing food, comprising:
a stirring blade mounted on a blade mount, the blade mount being fixed to a rotating shaft, the stirring blade being rotated by a driving force; and
a hollow blade cover which covers a periphery of the stirring blade;
wherein the stirring blade is formed in the shape of a rectangular plate, and a portion of a radially inward edge of the stirring blade is joined with the blade mount, said portion of the radially inward edge extending in a lengthwise direction along the blade mount;
wherein the stirring blade has an edge part that faces an inner circumferential face of the blade cover and extends adjacent to the inner circumferential face; and
wherein the blade cover has openings at the end of the blade cover and in a peripheral wall of the blade cover for circulation of the stirred ingredients, at least a portion of the said edge part that faces the inner circumferential face can be seen through an opening when the rotating blade rotates.
2. The stirring tool recited in claim 1, wherein the opening provided in the peripheral wall of the blade cover is a hole.
3. The stirring tool recited in claim 2, wherein the hole is formed so as to be elongate in the direction of the axis of rotation.
4. The stirring tool recited in claim 3,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
5. The stirring tool recited in claim 2 wherein the axial length of said edge part that faces the inner circumferential face, projected in a direction perpendicular to the axis of rotation, is no less than the axial length of the hole, and the portion corresponding to the axial length of said edge part that faces the inner circumferential face, projected in a direction perpendicular to the axis, extends over the entire axial length of said hole.
6. The stirring tool recited in claim 5,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
7. The stirring tool recited in claim 2,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
8. The stirring tool recited in claim 1, wherein a gap between the edge part that faces the inner circumferential face and the inner circumferential face of the blade cover is no greater than 1.0 mm.
9. The stirring tool recited in claim 8,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
10. The stirring tool recited in claim 1, wherein the number of stirring blades is less than the number of openings provided in the peripheral wall of the blade cover.
11. The stirring tool recited in claim 10,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
12. The stirring tool recited in claim 1, wherein the plane constituted by the inner circumferential face of the blade cover is cylindrical.
13. The stirring tool recited in claim 12,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
14. The stirring tool recited in claim 1,
wherein the blade mount is affixed to an end of the rotating shaft and four stirring blades are mounted on the blade mount;
wherein the stirring blades are mounted at a fixed distance from the rotating shaft;
wherein the stirring blades are parallel to the rotating shaft in the lengthwise directions thereof; and
wherein the four stirring blades are mounted so as to extend in the radial direction, so as to form a cross with the rotating shaft in the center.
15. The stirring tool recited in claim 1, wherein said portion of the radially inward edge is part of a longer edge dimension of the rectangular blade relative to a shorter edge dimension of the rectangular blade.
16. The stirring tool recited in claim 15, wherein said rectangular plate is sized and oriented in a manner so as not to completely block an axially-extending opening among said openings in the peripheral wall of the blade cover when the rotating blade rotates.