1. A blankmask which includes a light-shielding layer and a hard mask film on a transparent substrate, wherein the hard mask film comprises at least one among tin (Sn), chromium (Cr), and tantalum (Ta), wherein a thickness of the hard mask film is 10 \u212b to 100 \u212b, and an etch rate of the hard mask film is 0.6 \u212bsec or more.
2. The blankmask of claim 1, wherein the hard mask film further comprises at least one material among oxygen (O), nitrogen (N), and carbon (C).
3. The blankmask of claim 1, wherein the hard mask film further comprises at least one metal selected from the group consisting of titanium (Ti), vanadium (V), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), hafnium (Hf), tungsten (W), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au); and selectively further comprises at least one material among silicon (Si), oxygen (O), nitrogen (N), and carbon (C).
4. The blankmask of claim 1, wherein the hard mask film is formed of at least one among SnCON, SnON, SnCN, SnCO, SnO, SnC, SnN, Cr, CrCON, CrON, CrCN, CrCO, CrC, CrN, CrO, CrSn, CrSnCON, CrSnON, CrSnCN, CrSnCO, CrSnC, CrSnN, CrSnO, TaSn, TaSnCON, TaSnON, TaSnCN, TaSnCO, TaSnC, TaSnN, TaSnO, CrTaSnCON, CrTaSnON, CrTaSnCN, CrTaSnCO, CrTaSnO, CrTaSnC, and CrTaSnN.
5. The blankmask of claim 1, wherein the light-shielding layer comprises at least one metal and silicon (Si),
wherein the at least one metal comprises at least one selected from the group consisting of titanium (Ti), vanadium (V), chronimum (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), hafnium (Hf), tantalum (Ta), tungsten (W), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), aluminum (Al), magnesium (Mg), lithium (Li), and selenium (Se); and selectively further comprises at least one material among oxygen (O), nitrogen (N), and carbon (C).
6. The blankmask of claim 5, wherein the light-shielding layer is formed as a single-layer film, a multilayer film including a light block layer and an anti-reflective layer, or a continuous film.
7. The blankmask of claim 6, wherein the light-shielding layer comprises a MoSi compound, a MoTaSi compound, or a combination thereof.
8. The blankmask of claim 7, wherein the MoSi compound comprises at least one among MoSi, MoSiCON, MoSiON, MoSiCN, MoSiCO, MoSiO, MoSiC, and MoSiN, and
the MoTaSi compound comprises at least one among MoTaSi, MoTaSiCON, MoTaSiON, MoTaSiCN, MoTaSiCO, MoTaSiC, MoTaSiN, and MoTaSiO.
9. The blankmask of claim 7, wherein the MoTaSi compound has a composition in which the content of Mo is 1 to 40 at %, the content of Ta is 1 to 40 at %, the content of Si is 30 to 80 at %, the content of nitrogen (N) is 0 to 50 at %, the content of oxygen is 0 to 20 at %, and the content of carbon (C) is 0 to 20 at %, and
the MoSi compound has a composition in which the content of Mo is 1 to 40 at %, the content of Si is 40 to 80 at %, the content of nitrogen (N) is 0 to 50 at %, the content of oxygen is 0 to 20 at %, and the content of carbon (C) is 0 to 20 at %.
10. The blankmask of claim 7, wherein a composition ratio of Mo:Ta:Si included in a sputtering target used to form the MoTaSi compound is 2 to 40 at %:2 to 40 at %:20 to 96 at %, and
a composition ratio of Mo:Si included in a sputtering target used to form the MoSi compound is 5 to 40 at %:60 to 95 at %.
11. The blankmask of claim 5, wherein Si(Mo+Ta+N), which is a ratio of silicon (Si) to a composition ratio of the light-shielding layer, is 5.0 or less, and
Si(Mo+N), which is a ratio of silicon (Si) to the composition of the light-shielding layer, is 5.0 or less.
12. The blankmask of claim 1, wherein the hard mask film has a composition in which the content of Cr is 30 to 99 at %, the content of Sn is 1 to 30 at %, the content of oxygen is 0 to 50 at %, the content of nitrogen (N) is 0 to 50 at %, and the content of carbon (C) is 0 to 20 at %.
13. The blankmask of claim 1, wherein the hard mask film is formed using a Cr target and a Sn target, or using a CrSn target,
wherein a composition ratio of Cr:Sn in the CrSn target is 99 at % to 60 at %:1 at % to 40 at %.
14. The blankmask of claim 1, wherein the light-shielding layer has a thickness of 200 \u212b to 700 \u212b, and an optical density of 2.0 to 4.0 and a surface reflectivity of less than 50% at the exposure wavelength, and
a variation in a flatness of the light-shielding layer is less than 0.3 \u03bcm with respect to the transparent substrate.
15. The blankmask of claim 1, further comprising a resist film formed on the hard mask film,
wherein the resist film has a thickness of 300 \u212b to 1,500 \u212b.
16. The blankmask of claim 1, further comprising an etch stopping film disposed between the transparent substrate and the light-shielding layer.
17. The blankmask of claim 1, wherein the light-shielding layer is thermally treated at 200\xb0 C. to 500\xb0 C.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for making a fried legume snack, said method comprising the steps of:
a) hydrating whole legumes with hulls intact;
b) removing surface moisture from the legumes;
c) frying said legumes to an oil content of the legumes of 10% to 20% by weight; and
d) further cooking the partially fried legumes of step c) in a non-oil environment to a moisture level of about 1% to about 4% by weight.
2. The method of claim 1 wherein the hulls of the legumes are physically pierced prior to the frying step c).
3. The method of claim 2 wherein the hulls of the legumes are physically pierced after the hydrating of step a).
4. The method of claim 2 wherein the hulls of the legumes are physically pierced before the hydrating of step a).
5. The method of claim 1 wherein the frying step c) further comprises surface frying.
6. The method of claim 1 wherein the frying step c) further comprises at least two sequential frying stages with a resting period interposed between said at least two sequential frying stages.
7. The method of claim 1 wherein the legumes are fried at step c) to an oil content of about 14% to about 16% by weight.
8. The method of claim 1 wherein the legumes are further cooked at step d) to a moisture level of about 2% to about 3% by weight.
9. The method of claim 1 wherein the legume is selected from the group consisting of peas, lima beans, chickpeas, pinto beans, kidney beans, red beans, black-eyed peas, black beans, soy beans, navy beans, cranberry beans, and mayocoba beans.
10. The method of claim 9 wherein the legume consists of peas.
11. The method of claim 1 wherein the legume is hydrated at step a) to a moisture level of about 45% to about 60% by weight.
12. The method of claim 11 wherein the legume is hydrated to a moisture level of about 50% to about 55% by weight.
13. The method of claim 1 wherein a starch is added to the surface of the legume after step d).
14. The method of claim 13 wherein said starch comprises rice flour.
15. The method of claim 13 wherein said starch comprises wheat starch.
16. The fried legume snack made by the method of claim 1.
17. A fried legume snack comprising individual legume pieces having substantially intact hulls, a moisture content of about 1% to about 4% by weight, and an oil content of about 10% to about 15% by weight.
18. The fried legume snack of claim 17 wherein the legume is selected from the group consisting of peas, lima beans, chickpeas, pinto beans, kidney beans, red beans, black-eyed peas, black beans, soy beans, navy beans, cranberry beans, and mayocoba beans.
19. The fried legume snack of claim 18 wherein the legume consists of peas.
20. The fried legume snack of claim 17 further comprising added starch.
21. The fried legume snack of claim 20 wherein said starch comprises rice flour.
22. The fried legume snack of claim 20 wherein said starch comprises wheat starch.
23. The fried legume snack of claim 17 wherein said legume pieces have been physically pierced prior to cooking.