Author: claimsbot

What is claimed is:

1. A semiconductor memory device comprising:
a semiconductor substrate;
a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers;
a first contact connected to the first diffusion layer;
a first conductive oxygen barrier film electri- cally connected to the first contact and covering at least the upper surface of the first contact;
a first ferroelectric capacitor including a first electrode, a second electrode and a first ferroelectric film interposed between the first and second electrodes; and
a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
2. The semiconductor memory device according to claim 1, wherein the first conductive oxygen barrier film is formed of a material containing one of Ir, IrO2, Ru, and RuO2.
3. The semiconductor memory device according to claim 1, wherein the first connecting member includes:
a first wiring formed above the first ferroelectric capacitor;
a second contact connected to the first wiring and to the first electrode; and
a third contact connected to the first wiring and to the first conductive oxygen barrier film.
4. The semiconductor memory device according to claim 1, further comprising a second ferroelectric capacitor including a third electrode, the second electrode and a second ferroelectric film interposed between the third electrode and the second electrode, wherein the second electrode is shared by the first and second ferroelectric capacitors.
5. The semiconductor memory device according to claim 1, further comprising:
a first insulating film formed on the semiconductor substrate and on the first transistor and having the first conductive oxygen barrier film formed on a part of the upper surface of the first insulating film; and
a first insulating oxygen barrier film formed on the first insulating film and on the first conductive oxygen barrier film.
6. The semiconductor memory device according to claim 1, further comprising:
a first insulating film formed on the semiconductor substrate and on the first transistor; and
a first insulating oxygen barrier film formed on the first insulating film and having the first conductive oxygen barrier film formed on a part of the upper surface of the first insulating oxygen barrier film.
7. The semiconductor memory device according to claim 1, further comprising:
a first insulating film formed on the semiconductor substrate and on the first transistor and having an upper surface equal to the upper surface of the first conductive oxygen barrier film; and
a first insulating oxygen barrier film formed on the first insulating film and on the first conductive oxygen barrier film.
8. The semiconductor memory device according to any one of claims 5 to 7, wherein the first insulating oxygen barrier film is formed of a material containing one of Al2O3, SiN, SiON, TiO2 and PZT.
9. The semiconductor memory device according to claim 1, further comprising a side wall insulating film formed on each of the side surfaces of the first ferroelectric capacitor,
wherein the first connecting member is provided by a contact formed in self-alignment with the side wall insulating film.
10. The semiconductor memory device according to claim 5, wherein the side wall insulating film is formed of a material containing one of Al2O3, SiN, SiON, TiO2 and PZT.
11. The semiconductor memory device according to claim 1, further comprising:
a second contact connected to the second diffusion layer;
a second conductive oxygen barrier film electrically connected to the second contact and covering at least the upper surface of the second contact; and
a second connecting member connected to the second conductive oxygen barrier film and to the second electrode.
12. The semiconductor memory device according to claim 11, wherein the second connecting member is formed of a material containing one of Pt, Ir, IrO2, Ru, RuO2, and SRO.
13. The semiconductor memory device according to claim 11, wherein the first connecting member comprises:
a first wiring;
a second contact connected to the first wiring and to the first electrode;
a third contact connected to the first wiring; and
a fourth contact connected to the third contact and to the first conductive oxygen barrier film.
14. The semiconductor memory device according to claim 13, wherein the fourth connecting member is formed of a material containing one of Pt, Ir, IrO2, Ru, RuO2, and SRO.
15. The semiconductor memory device according to claim 13, wherein the fourth contact and the second connecting member are formed of the same material.
16. The semiconductor memory device according to claim 11, wherein the second connecting member is provided by a contact or a wiring.
17. The semiconductor memory device according to claim 16, wherein the wiring has edge portions and a central portion, the side surfaces of the edge portions of the wiring being coincident with the side surfaces of the edge portions of the second electrode, and the central portion of the wiring being recessed from the edge portions and being in contact with the second conductive oxygen barrier film.
18. The semiconductor memory device according to claim 16, wherein the wiring is equal to the second electrode in the planar shape.
19. The semiconductor memory device according to claim 1, further comprising:
a second contact connected to the second diffusion layer;
a second conductive oxygen barrier film electrically connected to the second contact and covering at least the upper surface of the second contact;
a second ferroelectric capacitor including a third electrode, a fourth electrode, and a second ferroelectric film interposed between the third and fourth electrodes; and
a second connecting member electrically connected to the second conductive oxygen barrier film, and the second and fourth electrodes.
20. The semiconductor memory device according to claim 19, wherein the first electrode, the second electrode and the first ferroelectric film are equal to each other in the planar shape, and the third electrode, the fourth electrode and the second ferroelectric film are equal to each other in the planar shape.
21. The semiconductor memory device according to claim 1, further comprising:
a second transistor formed on the semiconductor substrate and including a second gate electrode, the second diffusion layer and a third diffusion layer;
a second contact connected to the second diffusion layer;
a second conductive oxygen barrier film electrically connected to the second contact and covering at least the upper surface of the second contact;
a second ferroelectric capacitor including a third electrode, a fourth electrode, and a second ferroelectric film interposed between the third and fourth electrodes;
a second connecting member connected to the third electrode and to the second conductive oxygen barrier film;
a first side wall insulating film formed on each of the both side surfaces of the first ferroelectric capacitor;
a second side wall insulating film formed on each of the both side surfaces of the second ferroelectric capacitor; and
a third connecting member connected to the second electrode and to the second conductive oxygen barrier film, formed in self-alignment with the first and second side wall insulating films, and formed of a single contact.
22. The semiconductor memory device according to claim 1, further comprising:
a second contact connected to the second diffusion layer;
a second conductive oxygen barrier film electrically connected to the second contact, covering at least the upper surface of the second contact, and being equal to the second electrode in the planar shape; and
a second connecting member connected to the second conductive oxygen barrier film and to the second electrode.
23. The semiconductor memory device according to claim 22, wherein the first connecting member further comprises:
a first wiring formed above the first ferroelectric capacitor;
a third contact connected to the first wiring and to the first electrode;
a third connecting member formed on the first conductive oxygen barrier film and formed of a material equal to the material of the second connecting member;
a second wiring formed on the third connecting member, formed of a material equal to the material of the second electrode, and having a planar shape equal to the planar shape of the first conductive oxygen barrier film; and
a fourth contact connected to the first wiring and to the second wiring.
24. The semiconductor memory device according to claim 1, further comprising a second conductive oxygen barrier film formed in a peripheral circuit portion and used as a wiring.
25. The semiconductor memory device according to claim 1, wherein a plurality of cells, the first and second diffusion layers of the first transistor being connected, respectively, to the first and second electrodes of the first ferroelectric capacitor in each cell, are connected in series.
26. A method of manufacturing a semiconductor memory device, comprising:
forming on a semiconductor substrate a first transistor including a first gate electrode and first and second diffusion layers;
forming a first contact connected to the first diffusion layer;
forming on the first contact a first conductive oxygen barrier film covering at least the upper surface of the first contact;
forming above the first conductive oxygen barrier film a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes; and
forming a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
27. The method of manufacturing a semiconductor memory device according to claim 26, wherein the first connecting member includes:
a second contact connected to the first electrode;
a third contact connected to the first conductive oxygen barrier film; and
a first wiring connected to the second contact and to the third contact.
28. The method of manufacturing a semiconductor memory device according to claim 26, wherein:
a second ferroelectric capacitor including a third electrode, the second electrode, and a second ferroelectric film interposed between the third electrode and the second electrode is formed simultaneously with formation of the first ferroelectric capacitor; and
the second electrode is shared by the first and second ferroelectric capacitors.
29. The method of manufacturing a semiconductor memory device according to claim 26, further comprising forming a first insulating oxygen barrier film on the first conductive oxygen barrier film after formation of the first conductive oxygen barrier film.
30. The method of manufacturing a semiconductor memory device according to claim 26, further comprising:
forming, after formation of the first contact, a first insulating film including a first trench permitting the upper surface of the first contact to be exposed to the outside;
forming a conductive film to fill the first trench and to cover the first insulating film; and
planarizing the conductive film until the upper surface of the first insulating film is exposed to the outside to form the first conductive oxygen barrier film.
31. The method of manufacturing a semiconductor memory device according to claim 26, further comprising:
forming, after formation of the first ferroelectric capacitor, side wall insulating films on both side surfaces of the first ferroelectric capacitor; and
forming the first connecting member in self-alignment with the side wall insulating films.
32. The method of manufacturing a semiconductor memory device according to claim 26, further comprising:
forming a second contact connected to the second diffusion layer simultaneously with formation of the first contact;
forming on the second contact a second conductive oxygen barrier film covering at least the upper surface of the second contact simultaneously with formation of the first conductive oxygen barrier film; and
forming a second connecting member connected to the second conductive oxygen barrier film and to the second electrode.
33. The method of manufacturing a semiconductor memory device according to claim 32, further comprising forming a third contact connected to the first connecting member and to the first conductive oxygen barrier film simultaneously with formation of the second connecting member.
34. The method of manufacturing a semiconductor memory device according to claim 32, formation of the second connecting member further comprises:
forming, after formation of the first and second conductive oxygen barrier films, a first insulating film on the first and second conductive oxygen barrier films;
selectively removing the first insulating film to expose the upper surface of the second conductive oxygen barrier film to the outside;
forming a wiring material layer filling the first trench and covering the first insulating film;
forming a second insulating film on the wiring material layer filling the first trench;
forming an electrode material layer of the second electrode to cover the second insulating film and the wiring material layer; and
patterning the wiring material layer and the electrode material layer simultaneously to form the second contact member and the second electrode.
35. The method of manufacturing a semiconductor memory device according to claim 26, further comprising:
forming a second contact connected to the second diffusion layer simultaneously with formation of the first contact;
forming on the second contact a second conductive oxygen barrier film covering at least the upper surface of the second contact simultaneously with formation of the first conductive oxygen barrier film;
forming a second connecting member material layer connected to the second conductive oxygen barrier film and the second electrode;
forming a first electrode material layer, a first ferroelectric film and a second electrode material layer in the order mentioned on the second connecting member material layer; and
patterning simultaneously the first electrode material layer, the first ferroelectric film and the second electrode material layer to form the first ferroelectric capacitor and the second ferroelectric capacitor which are electrically connected to each other via the second connecting member.
36. A method of manufacturing a semiconductor memory device, comprising:
forming on a semiconductor substrate a first transistor including a first gate electrode and first and second diffusion layers, and a second transistor including a second gate electrode, the second diffusion layer and a third diffusion layer;
forming a first contact connected to the first diffusion layer and a second contact connected to the second diffusion layer;
forming on the first contact a first conductive oxygen barrier film covering at least the upper surface of the first contact and on the second contact a second conductive oxygen barrier film covering at least the upper surface of the second contact;
forming a first connecting member connected to the first conductive oxygen barrier film and a second connecting member connected to the second conductive oxygen barrier film;
forming a first ferroelectric capacitor including a first electrode, a second electrode and a first ferroelectric film interposed between the first and second electrodes and connected to the first electrode and to the first connecting member, and a second ferroelectric capacitor including a third electrode, a fourth electrode and a second ferroelectric film interposed between the third and fourth electrodes and connected to the third electrode and to the second connecting member;
forming first side wall insulating films on both side surfaces of the first ferroelectric capacitor, and second side wall insulating films on both side surfaces of the second ferroelectric capacitor; and
forming a third connecting member formed of a single contact connected to the second electrode and to the second conductive oxygen barrier film in self-alignment with the first and second side wall insulating films.
37. A method of manufacturing a semiconductor memory device, comprising:
forming on a semiconductor substrate a first transistor including a first gate electrode and first and second diffusion layers;
forming a first contact connected to the first diffusion layer and a second contact connected to the second diffusion layer;
forming a conductive oxygen barrier material layer to cover the first and second contacts;
forming a first insulating film on the conductive oxygen barrier material layer;
forming within the first insulating film third and fourth contacts positioned above the first and second contacts;
forming successively a first electrode material layer, a ferroelectric material layer and a second electrode material layer on each of the first insulating film and the third and fourth contacts;
patterning the ferroelectric material layer and the second electrode material layer; and
patterning the first electrode material layer, the first insulating film and the conductive oxygen barrier material layer to form a first conductive oxygen barrier film connected to the first and third contacts, the second conductive oxygen barrier film connected to the second and fourth contacts, and a ferroelectric capacitor connected to the fourth contact.
38. The method of manufacturing a semiconductor memory device according to claim 37, further comprising forming on the third contact a wiring layer formed of the first electrode material in patterning the first electrode material layer.
39. The method of manufacturing a semiconductor memory device according to claim 26, further comprising forming a second conductive oxygen barrier film used as a wiring in the peripheral circuit portion simultaneously with formation of the first conductive oxygen barrier film.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of controlling a machine during an excavating operation, comprising:
deploying stabilizers to ground contact to stabilize the machine at a first excavation site set-up position;
excavating with an excavating assemblage during a first excavating phase while the machine is stabilized at the first excavation site set-up position;
initiating an automated machine preparation for repositioning mode for preparing the machine, after the first excavating phase, for repositioning to a second excavation site set-up position for a second excavating phase, by activating an input device to send input signals to a controller;
delivering output signals from the controller to control automated machine preparation for repositioning to the second excavation site set-up position; and
driving the machine along the excavation site from the first excavation site set-up position to the second excavation site set-up position.
2. The method of claim 1, wherein delivering output signals includes delivering output signals to:
reduce machine engine speed to a level below the machine engine speed employed during excavating;
retract the stabilizers from ground contact;
move the excavating assemblage to a stowed position; and
engage a machine transmission gear suitable for facilitating machine repositioning.
3. The method of claim 2, including,
during the automated preparation for machine repositioning mode, delivering output signals from the controller to further reduce machine engine speed to idle after the stabilizers are retracted and the excavating assemblage is moved to stowed position, and before engagement of a machine transmission gear suitable for facilitating machine repositioning.
4. The method of claim 2, wherein the machine includes a front loader assembly including a loader bucket, further including:
forcing the loader bucket into ground contact to further stabilize the machine during the first excavating phase at the first set-up position;
and wherein delivering output signals includes delivering output signals to retract the loader bucket from ground contact.
5. The method of claim 4, wherein initiating an automated machine preparation for repositioning mode includes activating a touch screen display, and delivering output signals includes delivering output signals to, in the following order:
reduce machine engine speed to a level below the machine engine speed employed during excavating;
move the excavating assemblage to a stowed position;
retract the loader bucket from ground contact;
retract the stabilizers from ground contact;
further reduce machine engine speed; and
shift a machine transmission into a gear suitable to facilitate machine repositioning.
6. The method of claim 1, wherein initiating an automated machine preparation for repositioning mode includes at least one of:
activating a touch screen display;
moving a toggle switch;
pressing a button; or
manipulating a control lever.
7. The method of claim 1, further including
excavating a portion of a trench at the first excavation site set-up position and during the first excavating phase;
preparing the machine for repositioning during the automated machine preparation for repositioning mode; and
excavating another portion of the trench at the second set-up position and during the second excavating phase.
8. The method of claim 1, wherein delivering output signals includes delivering output signals to at least one of:
reduce machine engine speed to a level below the machine engine speed employed during excavating;
retract the stabilizers from ground contact;
move the excavating assemblage to a stowed position; or
engage a machine transmission gear suitable for facilitating machine repositioning.
9. The method of claim 1, wherein delivering output signals includes delivering output signals to:
retract the stabilizers from ground contact; and
move the excavating assemblage to a stowed position.
10. The method of claim 9, wherein delivering output signals further includes delivering output signals to reduce machine engine speed to a level below the machine engine speed employed during excavating.
11. A system for controlling a machine during an excavating operation, comprising:
an excavating assemblage;
a plurality of machine elements configured to facilitate machine set-up during an excavating operation; and
a control system configured to control the excavating assemblage to excavate material during a first excavating phase at a first excavation site machine set-up position, the control system being configured to control the plurality of machine elements during an automated machine preparation for repositioning mode after the first excavating phase, for preparing the machine for movement along the excavation site from the first excavation site machine set-up position to a second excavation site set-up position for a second excavating phase.
12. The system of claim 11, wherein the control system includes an input device for permitting operator input, and a control module for receiving input signals from the input device and for delivering output signals at least to the plurality of machine elements for controlling the plurality of machine elements during the automated machine preparation for repositioning mode.
13. The system of claim 12, wherein the input device includes at least one of a touch screen display, a joystick, a switch, or a button.
14. The system of claim 11, wherein the plurality of machine elements includes a pair of stabilizers mounted on the machine and configured to be deployed into ground contact for stabilizing the machine during the first excavating phase, and wherein the control system is configured to retract the stabilizers from ground contact during the automated machine preparation for repositioning mode.
15. The system of claim 11, wherein the excavating assemblage includes a backhoe mechanism including a swing assembly, a boom, a stick, and a bucket, and wherein the control system is configured to move the backhoe mechanism to a stowed position during the automated machine preparation for repositioning mode.
16. The system of claim 15, wherein the backhoe mechanism is mounted at the rear of the machine, and wherein one of the plurality of machine elements includes a front loader assembly mounted at the front of the machine.
17. The system of claim 16, wherein the front loader assembly includes a loader bucket configured to be moved into ground contact during the first excavating phase, and wherein the control system is configured to retract the loader bucket from ground contact during the automated machine preparation for repositioning mode.
18. A machine for excavating during a plurality of excavating phases, comprising:
an engine and a transmission mounted on the machine;
an excavating assemblage including a boom pivoted to the machine, a stick pivoted to the boom, and a bucket pivoted to the stick; and
a control system configured to control the excavating assemblage to excavate material during a first excavating phase at a first excavation site machine set-up position, the control system being configured to control machine elements during an automated machine preparation for repositioning mode after the first excavating phase, for preparing the machine for movement along the excavation site from the first excavation site machine set-up position to a second excavation site set-up position for a second excavating phase.
19. The machine of claim 18, including a pair of stabilizers movably mounted to the machine for ground contact during an excavating phase, a front loader bucket movably attached at the front of the machine for ground contact during the first excavating phase, and wherein the boom is pivoted at the rear of the machine.
20. The machine of claim 19, wherein the control system includes a touch screen display configured to enable a machine operator to initiate the automated machine preparation for repositioning mode and a control module configured for receiving input signals from the touch screen display and configured for delivering output signals to:
reduce machine engine speed to a level below the machine engine speed employed during excavating;
move the excavating assemblage to a stowed position;
retract the loader bucket from ground contact;
retract the pair of stabilizers from ground contact;
further reduce machine engine speed; and
engage a transmission gear suitable for machine repositioning.
21. The machine of claim 19, wherein, during the automated machine preparation for repositioning mode, the control system is configured to initiate retraction of the loader bucket from ground contact, initiate retraction of the stabilizers from ground contact, and initiate shifting of the transmission into a gear suitable for machine repositioning.
22. The machine of claim 18, wherein the control system includes an operator input device configured to permit an operator to initiate the automated machine preparation for repositioning mode.
23. The machine of claim 22, including:
an operator station including a seat movable to a position facing toward the machine front and movable to a position facing toward the machine rear;
wherein the input device is positioned proximate the operator station so as to enable an operator to initiate the automated machine preparation for repositioning mode, for repositioning the machine when the operator is in the seat and the seat is in a position facing toward the machine rear.
24. The machine of claim 18, wherein the control system includes a touch screen display configured to enable a machine operator to initiate the automated machine preparation for repositioning mode and includes a control module configured to receive input signals and to deliver output signals to:
move the excavating assemblage to a stowed position;
reduce machine engine speed to a level below the machine engine speed employed during excavating; and
retract a front loader bucket from ground contact.
25. The machine of claim 24, wherein the control module is further configured to deliver output signals to:
retract a pair of stabilizers movably mounted to the machine from ground contact;
further reduce machine engine speed; and
engage a transmission gear suitable for machine repositioning.
26. The machine of claim 18, wherein the control system includes a touch screen display configured to enable a machine operator to initiate the automated machine preparation for repositioning mode and includes a control module configured to receive input signals and to deliver output signals to at least one of:
reduce machine engine speed to a level below the machine engine speed employed during excavating;
move the excavating assemblage to a stowed position;
retract a front loader bucket from ground contact;
retract a pair of stabilizers movably mounted to the machine from ground contact;
further reduce machine engine speed; or
engage a transmission gear suitable for machine repositioning.

1. A method comprising
selecting a vertebral body for treatment having a cortical wall enclosing a cancellous bone volume,
establishing a percutaneous access having a longitudinal axis leading to the cancellous bone volume,
introducing a device into the vertebral body through the percutaneous access path, the device defining a deflected path along a deflected axis angled with respect to the longitudinal axis,
manipulating the device to modify the cancellous bone volume for introduction of bone filling material, and
introducing bone filling material into the cancellous bone volume modified by the device including introducing bone filling material along the percutaneous path and along the deflected path, and directing discharge of the bone filling material into the cancellous bone volume through an opening that is oriented at an angle relative to the deflected axis.
2. A method according to claim 1
wherein the percutaneous path comprises a transpedicular path.
3. A method according to claim 1
wherein the percutaneous path comprises a postero-lateral path.
4. A method according to claim 1
wherein the percutaneous path is established, at least in part, by a cannula.
5. A method according to claim 4
wherein introducing bone filling material into the cancellous bone volume includes withdrawing the cannula along the longitudinal axis while directing discharge of the bone filling material through the discharge opening.
6. A method according to claim 1 wherein the discharge-opening is oriented at generally a right angle relative to the deflected axis.
7. A method according to claim 1
wherein the opening comprises a side discharge port.
8. A method according to claim 1
wherein directing discharge of the bone filling material into the cancellous bone volume includes altering the orientation of the opening.
9. A method according to claim 1
wherein modifying the cancellous bone volume includes contacting cancellous bone with the device.
10. A method according to claim 1
wherein modifying the cancellous bone volume includes expanding the device for contact with cancellous bone.
11. A method according to claim 1
wherein modifying the cancellous bone volume includes inflating the device for contact with cancellous bone.
12. A method according to claim 1
wherein modifying the cancellous bone volume includes manipulating the device to create a cavity in cancellous bone.
13. A method according to claim 1
wherein modifying the cancellous bone volume includes manipulating the device to move fractured cortical bone.
14. A method according to claim 1
wherein the bone filling material comprises bone cement.
15. A method according to claim 1
wherein introducing bone filling material into the cancellous bone volume includes coupling a delivery tube to an injector of bone filling material, advancing the delivery tube along the percutaneous path, and operating the injector to convey bone filling material along the percutaneous path through the delivery tube.
16. A method according to claim 15
wherein the delivery tube includes a threaded coupling for coupling the delivery tube to the injector.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for polishing a wafer comprising:
a carrier;
at least one membrane dividing said carrier to form at least two chambers;
a retainer ring disposed on an edge of said polishing head; and
a chucking ring disposed on a lower portion of said polishing head.
2. The apparatus according to claim 1,
wherein said polishing head further includes a center supporter disposed in said carrier to provide a first chamber, and a middle supporter disposed in said carrier on the same plane as that of the center supporter, to provide a second chamber;
wherein said membrane is composed of first and second membranes enclosing said center and middle supporters separable from surface portions of said supporters; and
wherein said chucking ring is disposed in said carrier to provide a third chamber.
3. The apparatus according to claim 2, wherein a plurality of first holes are formed in said surface portion of said center supporter to communicate with said first chamber, a plurality of second holes are formed in said surface portion of said middle supporter to communicate with said second chamber, and a plurality of third holes are formed in said chucking ring to communicate with said third chamber.
4. The apparatus according to claim 2, wherein said chucking ring is disposed between said center supporter and said middle supporter.
5. The apparatus according to claim 2, wherein said chucking ring is disposed between said middle supporter and an inner surface of said carrier.
6. The apparatus according to claim 2, wherein said first, second and third chambers have respective first, second and third fluid passages communicating externally to said polishing head.
7. The apparatus according to claim 2, wherein said middle supporter is composed of a ring shape.
8. The apparatus according to claim 7, wherein said second membrane is composed of a ring shape corresponding to said middle supporter.
9. The apparatus according to claim 1, wherein films are adhered on said chucking ring around said third holes to operate as a medium in chucking and releasing of said wafer.
10. The apparatus according to claim 2, wherein edges of said surface portions of said center and middle supporters are rounded or chamfered.
11. An apparatus for polishing a wafer comprising:
a supporting portion having an abrasive pad disposed thereon;
a polishing head disposed over said abrasive pad; and
said polishing head comprising:.
a carrier;
at least one membrane dividing said carrier to form at least two chambers;
a retainer ring disposed on an edge of said polishing head; and
a chucking ring disposed on a lower portion of said polishing head.
12. The apparatus according to claim 11, wherein said chucking ring is located between a center supporter and a middle supporter disposed in the carrier.
13. The apparatus according to claim 11, wherein said chucking ring is located between a center supporter and a middle supporter disposed in the carrier between a middle supporter and an inner surface of the carrier.
14. A method for polishing a wafer, comprising the steps of:
vacuum-absorbing a wafer through a vacuum hole of a membrane positioned under a polishing head;
locating the vacuum-absorbed wafer on a polishing pad; and
polishing the wafer.
15. The method of claim 14 wherein vacuum-absorbing comprises drawing a vacuum on a fluid path formed through a supporter of the polishing head on which the membrane is mounted.
16. The method of claim 15 wherein the vacuum hole of the membrane comprises multiple first vacuum holes and wherein the supporter includes multiple second vacuum holes in alignment with the multiple first vacuum holes, and wherein the fluid path is in communication with the multiple second vacuum holes.
17. The method of claim 16 wherein, during vacuum absorbing, each of the first vacuum holes forms a seal about the corresponding second vacuum hole.
18. The method of claim 16 wherein a plurality of film structures are disposed on an outer surface of the supporter about each of the multiple second holes, each of the films mating with the corresponding first vacuum hole formed in the membrane.