Author: claimsbot

1. A mobile station executed method for updating a signal-to-interference ratio (SIR) target during a discontinuous transmission (DTX) period of a downlink transport channel having a network specified quality target value, comprising:
measuring a quality of another downlink transport channel for which the network has not specified a quality target value; and
updating the SIR target in accordance with the measured quality.
2. A method as in claim 1, where the downlink transport channel for which the network has not specified a quality target value is on a power controlled physical channel, and where updating uses the measured quality.
3. A method as in claim 1, where the downlink transport channel for which the network has not specified a quality target value is on a non-power controlled physical channel, and where updating comprises determining a mapping function, applying the mapping function to the measured quality to obtain a weighted quality, and using the weighted quality for updating the SIR target.
4. A method as in claim 1, where the mobile station conforms to a wide bandwidth, code division multiple access (WCDMA) third generation partnership project (3GPP) air interface standard.
5. A method as in claim 1, where the specified quality is comprised of a Block Error Rate (BLER).
6. A mobile station comprising a controller operating under a stored program for updating a signal-to-interference ratio (SIR) target during a discontinuous transmission (DTX) period of a downlink transport channel having a network specified quality target value, further comprising circuitry for measuring a quality of another downlink transport channel for which the network has not specified a quality target value, and said controller being responsive to the measured quality for updating the SIR target in accordance with the measured quality.
7. A mobile station as in claim 6, where the downlink transport channel for which the network has not specified a quality target value is on a power controlled physical channel, and where the controller operates for updating the SIR target using the measured quality.
8. A mobile station as in claim 6, where the downlink transport channel for which the network has not specified a quality target value is on a non-power controlled physical channel, and where the controller operates for updating the SIR target by determining a mapping function, applying the mapping function to the measured quality to obtain a weighted quality, and uses the weighted quality for updating the SIR target.
9. A mobile station as in claim 6, where the mobile station conforms to a wide bandwidth, code division multiple access (WCDMA) third generation partnership project (3GPP) air interface standard.
10. A mobile station as in claim 6, where the specified quality is comprised of a Block Error Rate (BLER).
11. A mobile station executed outer loop power control method for updating a signal-to-interference ratio (SIR) target during a discontinuous transmission (DTX) period of a downlink transport channel having a network specified Block Error Rate (BLER) target value, comprising:
obtaining a BLER value of another downlink transport channel for which the network has not specified a quality target value; and
updating the SIR target in accordance with the obtained BLER value.
12. A method as in claim 11, where updating further comprises determining whether the downlink transport channel for which the network has not specified a quality target value is on a power controlled physical channel or a non-power controlled physical channel, and if the downlink transport channel for which the network has not specified a quality target value is determined to be on a non-power controlled physical channel, further comprising determining a mapping function, applying the mapping function to the obtained quality to derive a weighted quality, and using the weighted quality for updating the SIR target.
13. A method as in claim 11, where the mobile station conforms to a wide bandwidth, code division multiple access (WCDMA) third generation partnership project (3GPP) air interface standard.
14. An outer loop power control method for updating a signal-to-interference ratio (SIR) target during a discontinuous transmission (DTX) period of a transport channel having a network specified Block Error Rate (BLER) target value, comprising:
obtaining a BLER value of another transport channel for which the network has not specified a quality target value; and
updating the SIR target in accordance with the obtained BLER value.
15. A computer program product comprising a computer useable medium including a computer readable program, wherein the computer readable program when executed on the computer causes the computer to operate a mobile station by operations comprising:
updating a signal-to-interference ratio (SIR) target during a discontinuous transmission (DTX) period of a downlink transport channel having a network specified quality target value by determining a quality of another downlink transport channel for which the network has not specified a quality target value and updating the SIR target in accordance with the determined quality.
16. The computer program product as in claim 15, where the downlink transport channel for which the network has not specified a quality target value is on a power controlled physical channel, and where updating uses the determined quality.
17. The computer program product as in claim 15, where the downlink transport channel for which the network has not specified a quality target value is on a non-power controlled physical channel, and where updating comprises determining a mapping function, applying the mapping function to the determined quality to obtain a weighted quality, and using the weighted quality for updating the SIR target.
18. A device comprising:
means for receiving a signal from a network; and
means for updating a signal-to-interference ratio (SIR) target during a discontinuous transmission (DTX) period of a downlink transport channel having a network specified quality target value, comprising means for determining a quality of another downlink transport channel for which the network has not specified a quality target value and for updating the SIR target in accordance with the determined quality.
19. The device as in claim 18, where the downlink transport channel for which the network has not specified a quality target value is on a power controlled physical channel, and where said updating means uses the determined quality.
20. The device as in claim 18, where the downlink transport channel for which the network has not specified a quality target value is on a non-power controlled physical channel, and where said updating means further comprises means for determining a mapping function, for applying the mapping function to the determined quality to obtain a weighted quality, and where said updating means uses the weighted quality for updating the SIR target.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method of repairing a flat panel display, comprising steps of:
(a) providing a substrate having a first vertically-extended data line, a second vertically-extended data line, a first horizontally-extended gate line, and a second horizontally-extended gate line for defining a first pixel region and a second pixel region thereby, a first pixel electrode and a second pixel electrode positioned in the first pixel region and a second region respectively, the first data line having an opening, and a first broken point and a second broken point of the first data line being formed between the opening in the second pixel region;
(b) electrically connecting the first data line and the first pixel electrode within the first pixel region;
(c) electrically connecting the first pixel electrode and the second pixel electrode; and
(d) electrically connecting the second pixel electrode and the second broken point of the first data line within the second pixel region.
2. The method according to claim 1, wherein the first pixel region is adjacent to the second pixel region.
3. The method according to claim 1, wherein the substrate further comprises a third pixel region between the first pixel region and the second pixel region.
4. The method according to claim 1, wherein the substrate further comprises conductive materials formed at different levels, the electrical connection between the first data line and the first pixel electrode is formed by connecting the conductive materials at different levels.
5. The method according to claim 1, wherein the first pixel region and the second pixel region comprise:
a first metal layer for forming a first gate electrode, a second gate electrode, the first gate line, the second gate line, and a bottom capacitor electrode, the bottom capacitor electrode being formed at a predetermined area of the first gate line;
a first electrical connecting layer near the first gate electrode;
a second electrical connecting layer near the bottom capacitor electrode;
a third electrical connecting layer near the second gate electrode;
an insulating layer covering the first metal layer;
a second metal layer formed above the insulating layer and patterned to form the first data line, the second data line, a first drainsource electrode, a second drainsource electrode, and an upper capacitor electrode,
the first data line and the first drain electrode respectively having a first protruding portion and a first drain extending portion above the first electrical connecting layer, the first data line and the second drain electrode respectively having a second protruding portion and a second drain extending portion above the third electrical connecting layer, and the upper capacitor electrode being formed above the bottom capacitor electrode and extending to cover the second electrical connecting layer;
a protection layer formed on the second metal layer and comprising a first contact hole and a second contact hole; and
a conductive layer formed on the protection layer and patterned as the first pixel electrode and the second electrode,
the first pixel electrode is connected to the first drain electrode via the first contact hole, and the second pixel electrode is connected to the upper capacitor electrode via the second contact hole.
6. The method according to claim 5, wherein the step (b) comprises steps of:
providing a first repair point on the first protruding portion of the first data line in the first pixel region;
using laser fusing technique to remove a part of the insulating layer on the first repair point to electrically connect the first data line and the first electrical connecting layer;
providing a second repair point on the first drain extending portion in the first pixel region; and
using laser fusing technique to remove a part of the insulating layer on the second repair point to electrically connect first drain electrode and the first electrical connecting layer.
7. The method according to claim 6, wherein the step (c) comprises steps of:
providing a third repair point on the second electrical connecting layer;
using laser fusing technique to remove a part of the insulating layer on the third repair point to electrically connect the first pixel electrode and the second electrical connecting layer;
providing a fourth repair point on the upper capacitor electrode; and
using laser fusing technique to remove a part of the insulating layer on the fourth repair point to electrically connect the second electrical connecting layer and the upper capacitor electrode.
8. The method according to claim 7, wherein the step (d) comprises steps of:
providing a fifth repair point on the second drain extending portion in the second pixel region;
using laser fusing technique to remove a part of the insulating layer on the fifth repair point to electrically connect the third electrical connecting layer and the second drain electrode;
providing a sixth repair point on the second protruding portion of the first data line in the second pixel region; and
using laser fusing technique to remove a part of the insulating layer on the sixth repair point to electrically connecting the first data line and the third electrical connecting layer.
9. The method according to claim 5, wherein the first electrical connecting layer and the third electrical connecting layer are formed by the first metal layer.
10. The method according to claim 5, wherein the first electrical connecting layer, the third electrical connecting layer and the conductive layer are made of the same material.
11. The method according to claim 5, wherein the second electrical connecting layer is formed of one material in the group consisting of the first metal layer, the second metal layer and the conductive layer.
12. The method according to claim 1, wherein the first pixel region and the second pixel region comprise:
a first metal layer for forming a first gate electrode, a second gate electrode, the first gate line, the second gate line, and a bottom capacitor electrode, the bottom capacitor electrode being formed at a predetermined area of the first gate line;
a first electrical connecting layer near the first gate electrode;
a second electrical connecting layer near the bottom capacitor electrode;
a third electrical connecting layer near the second gate electrode;
an insulating layer covering the first metal layer;
a second metal layer formed above the insulating layer and patterned to form the first data line, the second data line, a first drainsource electrode, and a second drainsource electrode,
the first data line and the first drain electrode respectively having a first protruding portion and a first drain extending portion above the first electrical connecting layer, the first data line and the second drain electrode respectively having a second protruding portion and a second drain extending portion above the third electrical connecting layer;
a protection layer formed above the second metal layer and comprising a first contact hole; and
a conductive layer positioned on the protection layer and patterned to form the first pixel electrode, the second electrode and an upper capacitor electrode;
the upper capacitor electrode is connected to the second pixel electrode and extended to cover the bottom capacitor electrode and the second electrical connecting layer, the first pixel electrode is connected to the first drain electrode via the first contact hole.
13. The method according to claim 12, wherein the step (b) comprises steps of:
electrically connecting the first protruding portion of the first data line and the first electrical connecting layer in the first pixel region; and
electrically connecting the first electrical connecting layer and the first drain extending portion of the first drain electrode.
14. The method according to claim 13, wherein the step (d) comprises steps of:
electrically connecting the third electrical connecting layer and the second drain extending portion of the second drain electrode; and
electrically connecting the second protruding portion of the first data line and the third electrical connecting layer.
15. The method according to claim 14, wherein the step (c) comprises steps of:
electrically connecting the first pixel electrode and the second electrical connecting layer;
electrically connecting the second electrical connecting layer and the upper capacitor electrode so as to connect the first and second pixel electrodes.
16. The method according to claim 14, wherein the first pixel electrode further comprises a pixel protruding portion overlapping the upper capacitor electrode, and the step (c) uses laser fusing technique to electrically connect the first pixel electrode and the upper capacitor electrode.
17. The method according to claim 12, wherein the first electrical connecting layer, the third electrical connecting layer and the first metal layer are made of the same material.
18. The method according to claim 12, wherein the first electrical connecting layer, the third electrical connecting layer and the conductive layer are made of the same material.
19. The method according to claim 12, wherein the second electrical connecting layer is formed of one material in the group consisting of the first metal layer and the second metal layer.
20. The method according to claim 12, wherein the first drain electrode and the second drain electrode are formed by one material in the group consisting of the second metal layer and the conductive layer.

1. A robust coiled electrode for an electrochemical cell, comprising
an elongated electrode assembly having a coiled and generally flat configuration, said assembly having a final winding, and wherein a lateral thickness dimension of the final winding is less than the remaining, inner windings; and
an unperforated, substantially planar current collector configured to be coupled to an outer surface portion of the final winding.
2. A coiled electrode according to claim 1, wherein the elongated electrode assembly further comprises: a first relatively thick member and a second relatively thin member coupled together to form an overlapping region.
3. A coiled electrode according to claim 2, further comprising: a spacer member disposed on a portion of an inner face of the final winding of the electrode assembly.
4. A coiled electrode according to claim 3, wherein said spacer member has a shape corresponding to the current collector and at least partially extends beyond a peripheral edge of the current collector.
5. A coiled electrode assembly according to claim 4, wherein said spacer member at least partially overlaps at least a portion of the overlapping region.
6. A coiled electrode according to claim 2, wherein said electrode assembly further comprises a sheet-type dielectric separator disposed over at least the exposed surface of the current collector.
7. A coiled electrode according to claim 6, wherein said dielectric separator substantially surrounds the electrode assembly.
8. A coiled electrode according to claim 7, wherein said dielectric separator further comprises: at least two layers of separator material.
9. A coiled electrode according to claim 8, wherein a peripheral edge of said at least two layers of separator material are sealed together to form a dielectric pouch around said electrode assembly.
10. A coiled electrode according to claim 2, wherein a portion of said current collector covers at least a portion of the overlapping region.
11. A coiled electrode according to claim 10, wherein said current collector is disposed closely adjacent to the terminal end of the final winding.
12. A coiled electrode according to claim 2, wherein at least a portion of the current collector is disposed adjacent at least a portion of the overlapping region.
13. A coiled electrode according to claim 3, wherein said spacer member comprises at least two sheets of material.
14. A coiled electrode according to claim 2, wherein said elongated electrode assembly comprises a lithium material.
15. A coiled electrode according to claim 14, wherein said current collector comprises: a nickel material, a copper material, a titanium material, or an alloy thereof.
16. A coiled electrode according to claim 6, further comprising an additional portion of separator material disposed adjacent a planar portion of the proximal, interior end of the elongated electrode assembly.
17. A coiled electrode according to claim 1, further comprising:
a reinforcing member coupled to the overlapping region.
18. A coiled electrode according to claim 17, wherein said reinforcing member comprises an alkali metal.
19. A coiled electrode according to claim 18, wherein said alkali metal comprises a lithium material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of handling a composition comprising placing a composition into contact with a material wherein said composition is in the molten state and said composition comprises at least 80% by weight of a rare-earth halide of formula AeLnfX(3f+e) wherein Ln represents one or more rare earth elements, X represents one or more halogen atoms chosen from Cl, Br and I, and A represents one or more alkali metals chosen from K, Li, Na, Rb and Cs, e and f representing values such that:
e, which may be zero, is less than or equal to 2f,
f is greater than or equal to 1,
wherein said material comprises at least 20% carbon by weight, the surface of said material that is in contact with said composition comprises at least 20% carbon by weight and said composition in the molten state coming into contact with said material is at a temperature above 500\xb0 C.
2. The method as claimed in claim 1, wherein the material forms part of a crucible.
3. The method as claimed in claim 2, wherein the same crucible is used in the method at least five times, the crucible returning to ambient temperature between each time.
4. The method as claimed in claim 2, wherein the same crucible is used in the method at least ten times, the crucible returning to ambient temperature between each time.
5. The method as claim 1, wherein the material comprises graphite or amorphous carbon.
6. The method as claimed in claim 5, wherein the material comprises a graphite substrate and a lining intended to come into contact with the composition comprising the rare-earth halide.
7. The method as claimed in claim 6, wherein the lining is made of pyrolytic carbon.
8. The method as claimed in claim 6, wherein the lining is made of silicon carbide.
9. The method as claimed in claim 5, wherein the material is entirely made of graphite or of amorphous carbon.
10. The method as claimed in claim 1, wherein contact takes place between 500\xb0 C. and 1000\xb0 C.
11. The method as claimed in claim 1, wherein the composition comprises at least 10% by weight of at least one rare earth element.
12. The method as claimed in claim 1, wherein the composition comprises at least 20% by weight of at least one rare earth element.
13. The method as claimed in claim 1, wherein the handling is carried out under an oxygenwater partial pressure of less than 10 millibars.
14. The method as claimed in claim 1, wherein the handling takes place within the context of the growth, from the composition, of a single crystal comprising the rare-earth halide.
15. The method as claimed in claim 14, wherein the growth is carried out with a growth rate of less than 5 mmh.
16. The method as claimed in claim 14, wherein the growth is of the Bridgeman type.
17. The method as claimed in claim 14, wherein the growth is of the Kyropoulos or Czochralski type.
18. The method as claimed in claim 14, wherein the single crystal is of formula AeLnfX(3f+e) in which Ln represents one or more rare earth elements, X represents one or more halogen atoms chosen from Cl, Br and I, and A represents one or more alkali metals chosen from K, Li, Na, Rb and Cs, e and f representing values such that:
e, which may be zero, is less than or equal to 2f,
f is greater than or equal to 1.
19. The method as claimed in claim 18, wherein the single crystal is of formula ALn2X7 in which Ln represents one or more rare earth elements and X represents one or more halogen atoms, chosen from Cl, Br and I, A representing Rb or Cs.
20. The method as claimed in claim 18, wherein the composition comprises LaCl3 andor LaBr3 andor GdBr3 andor LaxGd(1-x)Br3 with x ranging from 0 to 1.
21. The method as claimed in claim 18, wherein the composition also comprises CeCl3 andor CeBr3.
22. The method as claimed in claim 1, wherein the material is heated by graphite elements.