Author: claimsbot

1. A method for decomposing at least one of organic compound contained in an aqueous solution, comprising:
a step a of adding catalyst particles into the aqueous solution;
a step b of decomposing the organic compound by irradiating the aqueous solution with light having a wavelength of 200 nanometers or more and 400 nanometers or less while stirring the catalyst particles in the aqueous solution; and
a step c of stopping the stirring in the step b, and separating the catalyst particles from the aqueous solution by sedimentation,
wherein the catalyst particles are composed only of titanium dioxide particles and zeolite particles, the titanium dioxide particles are adsorbed on outer surfaces of the zeolite particles, the zeolite particles have a silicaalumina molar ratio of 10 or more, and the catalyst particles are contained in the aqueous solution at a concentration of 0.4 gramsliter or more and 16 gramsliter or less.
2. The method according to claim 1, comprising a step d of adding again the catalyst particles separated by sedimentation in the step c into the aqueous solution after the step c,
wherein the step b and the step c are performed again after the step d.
3. The method according to claim 1,
wherein the catalyst particles are separated by sedimentation in a solid-liquid separation vessel having a filtration membrane in the step c,
the method further comprises a step e of producing treated water from the aqueous solution using the filtration membrane, and
in the step e, the filtration membrane is a filtration membrane obtained by adhering a filter paper made of a resin to each of both sides of a plate-like frame, and the filtration membrane is arranged parallel to a direction in which the catalyst particles sediment.
4. The method according to claim 3, comprising a step f of adding again the catalyst particles separated by sedimentation in the step c into the aqueous solution after the step c,
wherein the step b, the step c and the step e are performed again after the step f.
5. The method according to claim 1, wherein the zeolite particles are zeolite particles treated with an acid aqueous solution to dissolve alumina portions thereof to introduce active sites for adsorbing the titanium dioxide particles directly on the zeolite particles, and then washed with water to remove the acid aqueous solution adhered to surfaces of the zeolite particles.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus comprising:
a grating structure on a mirror substrate etched to have a grating period causing diffracting, out of an optical path, a first incident radiation within a first band around a first wavelength, and
a multi-layer coating deposited on the grating structure that reflects the first incident radiation, in the optical path, within the first band and a second incident radiation within a second band around a second wavelength.
2. The apparatus of claim 1 wherein the grating structure has one of a one-dimensional layout and a two-dimensional layout.
3. The apparatus of claim 1 wherein the grating structure comprises:
a plurality of ridges spaced at the grating period, the ridges having a ridge width and height, the ridge width being approximately proportionally to the grating period with a first proportionality constant, the ridge height being approximately proportionally to the grating period with a second proportionality constant.
4. The apparatus of claim 1 wherein the first wavelength is longer than approximately 60 nm.
5. The apparatus of claim 1 wherein the second wavelength is at approximately 13.4 nm.
6. The apparatus of claim 1 wherein the multi-layer coating comprises:
a plurality of layers of first and second materials having one of high and low atomic numbers, respectively, and high and low densities of charge carriers, respectively.
7. The apparatus of claim 6 wherein the first material is molybdenum (Mo).
8. The apparatus of claim 6 wherein the second material is one of silicon (Si) and beryllium (Be).
9. The apparatus of claim 6 wherein the multi-layer coating further comprises:
a plurality of layers of a compound interspersed within the plurality of the first and second materials.
10. The apparatus of claim 9 wherein the compound is silicon carbide (SiC).
11. An apparatus comprising:
a first multi-layer coating deposited on a mirror substrate to reflect a first incident radiation, in an optical path, within a first band around a first wavelength and a second incident radiation within a second band around a second wavelength; and
a grating structure deposited on the first multi-layer coating, the grating structure being etched to have a grating period causing diffracting, out of the optical path, the second incident radiation within the second band.
12. The apparatus of claim 11 wherein the grating structure comprises:
a plurality of ridges spaced at the grating period, the ridges having a ridge width and height, the ridge width being approximately proportionally to the grating period with a first proportionality constant, the ridge height being approximately proportionally to the grating period with a second proportionality constant.
13. The apparatus of claim 12 wherein each of the ridges comprises:
one of a metal spacer, a second multi-layer coating, and a combination of the metal spacer and the second multi-layer coating, the metal spacer providing grating spacing, the second multi-layer coating reflecting the first incident radiation within the first band and the second incident radiation within the second band.
14. The apparatus of claim 11 further comprises:
a stop layer deposited between the grating structure and the first multi-layer coating to protect the first multi-layer coating during etching the grating structure.
15. The apparatus of claim 11 wherein the first wavelength is at approximately 13.4 nm.
16. The apparatus of claim 13 wherein each of the first and second multi-layer coatings comprises a plurality of layers of first and second materials having one of high and low atomic numbers, respectively, and high and low densities of charge carriers, respectively.
17. The apparatus of claim 16 wherein the first material is molybdenum (Mo).
18. The apparatus of claim 16 wherein the second material is one of silicon (Si) and beryllium (Be).
19. The apparatus of claim 16 wherein each of the first and second multi-layer coatings further comprises:
a plurality of layers of a compound interspersed within the plurality of the first and second materials.
20. The apparatus of claim 19 wherein the compound is silicon carbide (SiC).
21. A method comprises:
etching a grating structure on a mirror substrate to have a grating period causing diffracting, out of an optical path, a first incident radiation within a first band around a first wavelength; and
depositing a multi-layer coating on the grating structure, the multi-layer coating reflecting, in the optical path, the first incident radiation within the first band and a second incident radiation within a second band around a second wavelength.
22. The method of claim 21 wherein etching the grating structure comprises etching the grating structure to have one of a one-dimensional layout and a two-dimensional layout.
23. The method of claim 21 wherein etching the grating structure comprises:
etching a plurality of ridges spaced at the grating period, the ridges having a ridge width and height, the ridge width being approximately proportionally to the grating period with a first proportionality constant, the ridge height being approximately proportionally to the grating period with a second proportionality constant.
24. The method of claim 21 wherein the first wavelength is longer than approximately 60 nm.
25. The method of claim 21 wherein the second wavelength is at approximately 13.4 nm.
26. The method of claim 21 wherein depositing the multi-layer coating comprises:
depositing a plurality of layers of first and second materials having one of high and low atomic numbers, respectively, and high and low densities of charge carriers, respectively.
27. The method of claim 26 wherein the first material is molybdenum (Mo).
28. The method of claim 26 wherein the second material is one of silicon (Si) and beryllium (Be).
29. The method of claim 26 wherein depositing the multi-layer coating further comprises:
interspersing a plurality of layers of a compound within the plurality of the first and second materials.
30. The method of claim 29 wherein the compound is silicon carbide (SiC).
31. A method comprising:
depositing a first multi-layer coating on a mirror substrate, the first multi-layer coating reflecting, in an optical path, a first incident radiation within a first band around a first wavelength and a second incident radiation within a second band around a second wavelength; and
etching a grating structure on the first multi-layer coating to have a grating period causing diffracting, out of the optical path, the second radiation within the second band.
32. The method of claim 31 wherein etching the grating structure comprises:
etching a plurality of ridges spaced at the grating period, the ridges having a ridge width and height, the ridge width being approximately proportionally to the grating period with a first proportionality constant, the ridge height being approximately proportionally to the grating period with a second proportionality constant.
33. The method of claim 32 wherein etching each of the ridges comprises:
etching one of a metal spacer, a second multi-layer coating, and a combination of the metal spacer and the second multi-layer coating, the metal spacer providing grating spacing, the second multi-layer coating reflecting the first incident radiation within the first band and the second incident radiation within the second band.
34. The method of claim 31 further comprises:
depositing a stop layer between the grating structure and the first multi-layer coating to protect the first multi-layer coating during etching the grating structure.
35. The method of claim 31 wherein the first wavelength is at approximately 13.4 nm.
36. The method of claim 33 wherein depositing each of the first and second multi-layer coatings comprises depositing a plurality of layers of first and second materials having one of high and low atomic numbers, respectively.
37. The method of claim 36 wherein the first material is molybdenum (Mo).
38. The method of claim 36 wherein the second material is one of silicon (Si) and beryllium (Be).
39. The method of claim 36 wherein depositing each of the first and second multi-layer coatings further comprises:
interspersing a plurality of layers of a compound within the plurality of the first and second materials.
40. The method of claim 39 wherein interspersing a plurality of layers of the compound comprises interspersing a plurality of layers of silicon carbide (SiC).
41. A system comprising:
a mirror to reflect an extreme ultra violet (EUV) radiation;
a baffle having an opening positioned to stop diffracted radiation rays and allowing actinic radiation rays to pass through the opening; and
a reflective spectral filter positioned to generate the diffracted radiation rays and the actinic radiation rays from the reflected EUV radiation, the reflective spectral filter comprising:
a grating structure on a mirror substrate etched to have a grating period causing diffracting, out of an optical path, a first band around a first wavelength, and
a multi-layer coating deposited on the grating structure that reflects the first incident radiation, in an optical path, within the first band and a second incident radiation within a second band around a second wavelength.
42. The system of claim 41 wherein the grating structure has one of a one-dimensional layout and a two-dimensional layout.
43. The system of claim 41 wherein the grating structure comprises:
a plurality of ridges spaced at the grating period, the ridges having a ridge width and height, the ridge width being approximately proportionally to the grating period with a first proportionality constant, the ridge height being approximately proportionally to the grating period with a second proportionality constant.
44. The system of claim 41 wherein the first wavelength is longer than approximately 60 nm.
45. The system of claim 41 wherein the second wavelength is at approximately 13.4 nm.
46. The system of claim 41 wherein the multi-layer coating comprises:
a plurality of layers of first and second materials having one of high and low atomic numbers, respectively, and high and low densities of charge carriers, respectively.
47. The system of claim 46 wherein the first material is molybdenum (Mo).
48. The system of claim 46 wherein the second material is one of silicon (Si) and beryllium (Be).
49. The system of claim 46 wherein the multi-layer coating further comprises:
a plurality of layers of a compound interspersed within the plurality of the first and second materials.
50. The system of claim 49 wherein the compound is silicon carbide (SiC).
51. A system comprising:
a mirror to reflect an extreme ultra violet (EUV) radiation;
a baffle having an opening positioned to stop diffracted radiation rays and allowing actinic radiation rays to pass through the opening; and
a reflective spectral filter positioned to generate the diffracted radiation rays and the actinic radiation rays from the reflected EUV radiation, the reflective spectral filter comprising:
a first multi-layer coating deposited on a mirror substrate, the first multi-layer coating reflecting a first incident radiation, in an optical path, within a first band around a first wavelength and a second incident radiation within a second band around a second wavelength, and
a grating structure deposited on the first multi-layer coating, the grating structure being etched to have a grating period causing diffracting, out of the optical path, the second incident radiation within the second band.
52. The system of claim 51 wherein the grating structure comprises:
a plurality of ridges spaced at the grating period, the ridges having a ridge width and height, the ridge width being approximately proportionally to the grating period with a first proportionality constant, the ridge height being approximately proportionally to the grating period with a second proportionality constant.
53. The system of claim 52 wherein each of the ridges comprises:
one of a metal spacer, a second multi-layer coating, and a combination of the metal spacer and the second multi-layer coating, the metal spacer providing grating spacing, the second multi-layer coating reflecting the first incident radiation within the first band and the second incident radiation within the second band.
54. The system of claim 51 wherein the reflective spectral filter further comprises:
a stop layer deposited between the grating structure and the first multi-layer coating to protect the first multi-layer coating during etching the grating structure.
55. The system of claim 51 wherein the first wavelength is at approximately 13.4 nm.
56. The system of claim 53 wherein each of the first and second multi-layer coatings comprises a plurality of layers of first and second materials having one of high and low atomic numbers, respectively, and high and low densities of charge carriers, respectively.
57. The system of claim 56 wherein the first material is molybdenum (Mo).
58. The system of claim 56 wherein the second material is one of silicon (Si) and beryllium (Be).
59. The system of claim 56 wherein each of the first and second multi-layer coatings further comprises:
a plurality of layers of a compound interspersed within the plurality of the first and second materials.
60. The system of claim 59 wherein the compound is silicon carbide (SiC).

1. A semiconductor device comprising:
at least one trench lateral power MOSFET on a semiconductor substrate, comprising
a first gate oxide film and first gate electrodes that are positioned in a trench;
a first drain region positioned under a bottom surface of the trench;
first source regions positioned on both sides of the trench;
an extended drain region positioned between the first drain region and the first source regions;
a first drain electrode connected electrically to the first drain region; and
first source electrodes connected electrically to corresponding first source regions; and

at least one planar MOSFET positioned on the semiconductor substrate, comprising
a second gate oxide film and a second gate electrode that are positioned on a surface of the semiconductor substrate;
a second drain region and a second source region that are positioned in a surface layer of the semiconductor substrate on both sides of the second gate electrode;
a second drain electrode connected electrically to the second drain region; and
a second source electrode connected electrically to the second source region,

wherein the first drain electrode, the first source electrodes, the second drain electrode, and the second source electrode are formed by patterning a same metal layer.
2. The semiconductor device according to claim 1, wherein the first gate electrodes and the second gate electrode are formed by patterning a polysilicon layer formed on the surface of the semiconductor substrate and inside the trench.
3. The semiconductor device according to claim 1, wherein an n-channel trench lateral power MOSFET and a p-channel trench lateral power MOSFET are positioned on the semiconductor substrate.
4. The semiconductor device according to claim 1, wherein the at least one trench lateral power MOSFET is positioned in a well region that is positioned in the semiconductor substrate.
5. The semiconductor device according to claim 4, wherein a plurality of trench lateral power MOSFETs of a positioned in the same well region.
6. The semiconductor device according to claim 1, wherein an n-channel planar MOSFET and a p-channel planar MOSFET are positioned on the semiconductor substrate.
7. The semiconductor device according to claim 1, wherein a bipolar transistor is positioned on the semiconductor substrate, and a collector electrode, a base electrode, and an emitter electrode of the bipolar transistor are formed by patterning the metal layer.
8. The semiconductor device according to claim 1, wherein a resistance element is positioned on the semiconductor substrate, and electrodes of the resistance element are formed by patterning the metal layer.
9. The semiconductor device according to claim 2, wherein a capacitance element is positioned on the semiconductor substrate, and an electrode of the capacitance element is formed by patterning the polysilicon layer.
10. The semiconductor device according to claim 1, wherein the first gate oxide film is thicker than the second gate oxide film.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A connector comprising:
a plurality of contacts; and
an insulator having a plurality of through-holes for receiving the plurality of contacts,
wherein each of the plurality of contacts comprises a resilient member and has rolled surfaces as contact surfaces, and two contacts of the plurality of contacts are disposed in each of the plurality of through-holes in such a manner that the contact surfaces of one of said two contacts face the respective contact surfaces of the other one of said two contacts in a direction perpendicular to a pitch array of the contacts that extends in a direction of a length of a connector and also extends in a direction substantially perpendicular to the plane of the contacts.
2. The connector according to claim 1, wherein each of the plurality of contacts includes electric contact portions at upper and lower end portions thereof.
3. The connector according to claim 1, wherein opening portions of the plurality of through-holes are arranged in a linear fashion on at least one surface of the insulator.
4. The connector according to claim 1, wherein said two contacts are disposed in parallel to each other within the through-hole.
5. The connector according to claim 1, wherein engaging portions for fixing the two contacts are formed on an inner wall of each of the plurality of through-holes.
6. Contacts which are used in a pair, each contact comprising:
a pair of contact portions which are formed at both ends of the contact and which come in electrical contact with associated electrodes on two opposed wiring boards which are used in an electronic device; and
a resilient member which couples the pair of contact portions,
wherein the contact portions are formed into rolled surfaces, and the contact portions of one of the contacts used in a pair face the respective contact portions of the other one of the contacts used in a pair in a direction perpendicular to a pitch array of the contacts that extends in a direction of a length of a connector and also extends in a direction substantially perpendicular to the plane of the contacts.
7. The contacts according to claim 6, wherein each of the contacts includes:
a vertically extending columnar portion; and
strip-shaped portions extending from a middle portion of the columnar portion in up-and-down directions in a meandering fashion to the pair of contact portions.
8. The contacts according to claim 6, wherein a plurality of engaging portions for engaging the contact with an inner wall of an insulator, which receives the contact, are formed on the columnar portion.
9. The contacts according to claim 7, wherein the strip-shaped portion includes a U-shaped portion which extends in a horizontal direction, and a U-shaped portion which extends in a vertical direction.
10. An electronic device comprising:
a plurality of wiring boards which are stacked; and
a plurality of connectors which are disposed between the plurality of wiring boards, thereby to electrically connect the plurality of wiring boards,
wherein each of the connectors comprises:
a plurality of sets of contacts, each set being composed of a pair of contacts, each of the contacts comprising a resilient member and having rolled surfaces as contact surfaces, the contact surfaces of one of said pair of contacts facing the respective contact surfaces of the other one of said pair of contacts in a direction perpendicular to a pitch array of the contacts that extends in a direction of a length of a connector; and
an insulator in which a plurality of through-holes each receiving the pair of contacts are formed and also extends in a direction substantially perpendicular to the plane of the contacts.