1461150901-63bdbf8b-756b-4738-a0f9-3e295e4ddf78

1-12. (canceled)
13. A method for synchronizing a radio communication system divided up into radio cells, comprising:
transmitting data by a timeslot multiple access method with each radio cell having a base station for providing radio coverage to a plurality of mobile stations assigned to the radio cell;
receiving at each base station signals from mobile stations assigned to the radio cell of the base station and signals from mobile stations assigned to adjacent radio cells;
determining the number of mobile stations at the base station, on the basis of the signals received from the mobile stations and comparing the number at the base station with a predefined threshold value;
if the number of mobile stations is below the threshold value, then using a first synchronization method for synchronizing the base station and the mobile stations assigned to the base station, the first synchronization method corresponding to an assigned transmission standard of the radio communication system;
if the number of mobile stations exceeds the threshold value, then using a second synchronization method in which the base station evaluates the signals received from the mobile stations to determine a time synchronization value and a frequency synchronization value to which the base station synchronizes itself;
if the number of mobile stations exceeds the threshold value, then receiving at the mobile station a signal from the base station of the radio cell to which the mobile station is assigned and signals from base stations of adjacent radio cells; and
if the number of mobile stations exceeds the threshold value, then evaluating the base station signals received at the mobile station to determine a time synchronization value and a frequency synchronization value to which the mobile station synchronizes itself.
14. The method as claimed in claim 13, wherein base stations of adjacent radio cells use radio transmission resources from a stock that is collectively assigned to the base stations for data transmission purposes.
15. The method as claimed in claim 13, wherein with the second synchronization method each base station uses timeslots from carrier frequencies collectively assigned to the base station and base stations of adjacent radio cells, the timeslots being used as radio transmission resources.
16. The method as claimed in claim 13, wherein
with the second synchronization method base stations of at least two adjacent radio cells simultaneously and jointly employ a common timeslot of a common carrier frequency for providing radio coverage to respectively assigned mobile stations, and
the common timeslot is selected from collectively assigned radio transmission resources taking account of an interference situation in the common timeslot.
17. The method as claimed in one of the preceding claims, wherein with the second synchronization method both the base station and the mobile stations adjust carrier frequencies and timeslot transmitting instants on a subscriber-specific basis.
18. The method as claimed in one of the preceding claims, wherein co-channel interference is minimized at the base station andor the mobile stations using an interference suppression method.
19. The method as claimed in claim 13, wherein radio transmission resources are assigned at each base station in such a way that co-channel interference on adjacent radio cells is minimized.
20. The method as claimed in claim 13, wherein the radio communication system uses an OFDM radio transmission method.
21. The method as claimed in claim 13, wherein the radio communication system uses a TDD or FDD radio transmission method.
22. The method as claimed in claim 13, wherein with the second synchronization method a time deviation is determined by correlation and a frequency deviation is determined by ascertaining a phase rotation of consecutive symbols following a transformation into the frequency range.
23. The method as claimed in claim 13, wherein the second synchronization method is performed without additional signaling using a higher protocol layer between the base station and mobile stations assigned to the radio cell of the base station.
24. The method as claimed in claim 13, wherein to select the first or second synchronization method, the number of mobile stations is compared using a time-dependent hysteresis function specified by a threshold value range.
25. The method as claimed in claim 14, wherein with the second synchronization method each base station uses timeslots from carrier frequencies collectively assigned to the base station and base stations of adjacent radio cells, the timeslots being used as radio transmission resources.
26. The method as claimed in claim 25, wherein
with the second synchronization method base stations of at least two adjacent radio cells simultaneously and jointly employ a common timeslot of a common carrier frequency for providing radio coverage to respectively assigned mobile stations, and
the common timeslot is selected from collectively assigned radio transmission resources taking account of an interference situation in the common timeslot.
27. The method as claimed in 26, wherein with the second synchronization method both the base station and the mobile stations adjust carrier frequencies and timeslot transmitting instants on a subscriber-specific basis.
28. The method as claimed in 27, wherein co-channel interference is minimized at the base station andor the mobile stations using an interference suppression method.
29. The method as claimed in claim 28, wherein radio transmission resources are assigned at each base station in such a way that co-channel interference on adjacent radio cells is minimized.
30. The method as claimed in claim 29, wherein the radio communication system uses an OFDM radio transmission method.
31. The method as claimed in claim 30, wherein the radio communication system uses a TDD or FDD radio transmission method.
32. The method as claimed in claim 31, wherein with the second synchronization method a time deviation is determined by correlation and a frequency deviation is determined by ascertaining a phase rotation of consecutive symbols following a transformation into the frequency range.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method for dynamically controlling of a multiple actuator-sensor smart matter dynamic control system, comprising:
predicting future behavior of the multiple actuator-sensor smart matter dynamic control system using a plurality of control system models;
determining at least one control system model which is more successful than at least one other model of the plurality of models in predicting the future behavior of the multiple actuator-sensor smart matter dynamic control system;
increasing a weight of the at least one more successful control system model in the plurality of control system models used to predict future behavior of the multiple actuator-sensor smart matter dynamic control system relative to the weight of the at least one other model; and
using the at least one more successful control system model with the increased weight to control the multiple actuator-sensor smart matter dynamic control system.
2. The method of claim 1, wherein the plurality of control system models comprises N control system models and each of the N control system models is initially assigned a weight wi such that
8
i
=
1

N
w
i
=
1.
3. The method of claim 2, wherein using an ith model includes investing a certain fraction ai of the weight wi of the ith model, where 0<ai<1.
4. The method of claim 3, wherein each model is used to predict, at a current time t, a future state of the multiple actuator-sensor smart matter dynamic control system at a later time (tt):
xi(t;x(t),u(t)).
5. The method of claim 4, wherein the invested amount is split between the N models according to the formula
9
w
i

n
e
w
=
(

1
–
a

)
w
i

o
l
d
+

a
1
(
e
i
2

+
2
)
j
=
1

N
1
(
e
j
2

+
2
)
6. The method of claim 1, further including repeating the steps within one or more selectable time periods.
7. The method of claim 1, further including the sum of prediction error over a finite interval
8. The method of claim 1, including the actuation and the error to weight new models.
9. A dynamical controller of a multiple actuator-sensor smart matter dynamical control system, comprising:
means to predict a future behavior of a multiple actuator-sensor smart matter dynamical control system using a plurality of control system models;
means determining at least one control system model which is more successful than other models in the plurality of models in predicting future behavior of the multiple actuator-sensor smart matter dynamical control system;
means increasing the weight of the at least one more successful control system model in the plurality of control system models used to predict future behavior of the multiple actuator-sensor smart matter dynamical control system; and
means using the at least one more successful control system model to control the multiple actuator-sensor smart matter dynamical control system.
10. The controller of claim 9, wherein the plurality of control system models comprises N control system models, and each of the N control system models is initially assigned a weight wi such that
10
i
=
1

N
w
i
=
1
11. The controller of claim 9, wherein using an ith model includes investing a certain fraction a1 of the weight w1 of the ith model, where 0<ai<1.
12. The controller of claim 9, wherein each model is used to predict, at a current time t, a future state of the multiple actuator-sensor smart matter dynamical control system at a later time (tt):
xi(t;x(t),u(t))..
13. The controller of claim 11, wherein the invested amount is split between the models according to the formula
11
w
i

n
e
w
=
(

1
–
a

)
w
i

o
l
d
+

a
1
(
i
2

+
2
)
j
=
1

N
1
(
j
2

+
2
)
14. A dynamical controller of a multiple actuator-sensor smart matter dynamical control system, comprising:
a prediction circuit usable to predict a future behavior of the multiple actuator-sensor smart matter dynamical control system using a plurality of control system models;
a success determination circuit usable to determine at least one control system model which is more successful than at least one other model in the plurality of models in predicting the future behavior of the multiple actuator-sensor smart matter dynamical control system;
a weight increasing circuit usable to increase the weight of the at least one more successful control system model relative to the at least one other model; and
a controller that uses at least the at least one more successful control system models to control the multiple actuator-sensor smart matter dynamical control system.
15. The controller of claim 14, wherein the plurality of control system models comprises N control system models; and each of the N control system models is initially assigned a weight wi such that
12
i
=
1

N
w
i
=
1
16. The controller of claim 14, wherein using an ith model includes investing a certain fraction ai of the weight wi of the ith model, where, 0<ai<1.
17. The controller of claim 14, wherein each model is used to predict, at a current time t, a future state of the multiple actuator-sensor smart matter dynamical control system at a later time (tt):
xi(t;x(t),u(t)).
18. The controller of claim 16, wherein the invested amount is split between the models according to the formula
13
w
i

n
e
w
=
(

1
–
a

)
w
i

o
l
d
+

a
1
(
i
2

+
2
)
j
=
1

N
1
(
j
2

+
2
)

1461150890-42781b99-4c98-4d70-a5b4-a516005ca00b

1. A monolithic, three-dimensional memory device, comprising:
a substrate having a major surface;
a plurality of electrically conductive word lines over the major surface of the substrate, wherein each word line is elongated in a first direction that is substantially parallel to the major surface of the substrate and the plurality of word lines are spaced apart from one another in a second direction that is substantially perpendicular to the major surface of the substrate, and an electrically insulating material is located between each of the spaced apart word lines;
an electrically conductive bit line extending in a direction substantially perpendicular to the major surface of the substrate and adjacent to each of the plurality of word lines;
a non-volatile memory element material located between the bit line and each of the plurality of word lines; and
a plurality of middle electrodes comprising an electrically conductive material located between the bit line and each of the plurality of word lines, wherein the plurality of middle electrodes are discrete electrodes which are isolated from one another in at least the second direction.
2. The device of claim 1, further comprising:
a non-linear element located between the bit line and each of the plurality of word lines.
3. The device of claim 2, wherein each of the middle electrodes is adjacent to the non-volatile memory element material and electrically connects the non-volatile memory element material in series with the non-linear element.
4. The device of claim 2, wherein the non-linear element comprises a Schottky junction.
5. The device of claim 2, wherein the non-linear element comprises a tunnel junction.
6. The device of claim 2, wherein the non-linear element comprises a metal-insulator-metal (MIM) junction.
7. The device of claim 2, wherein the non-linear element is formed by providing a layer of insulating material over at least one side surface of the bit line.
8. The device of claim 1, wherein the plurality of middle electrodes are located between the non-volatile memory element material and the bit line.
9. The device of claim 1, wherein the plurality of middle electrodes are located between the non-volatile memory element and the word lines.
10. The device of claim 1, wherein the bit line comprises a generally pillar-shaped structure having at least one side surface, and the non-volatile memory element material comprises a continuous layer that extends over a side surface of the bit line and adjacent to each of the plurality of word lines.
11. The device of claim 10, wherein:
the layer of non-volatile memory element material comprises a plurality of clam shape portions adjacent to each of the plurality of word lines;
each of the clam shape portions surrounds a respective one of the plurality of middle electrodes on three sides;
the bit line comprises the generally pillar-shaped structure having a substantially rectangular cross section;
the non-linear element is located adjacent to all four sidewalls of the substantially-pillar shaped bit line; and
the a plurality of middle electrodes are located adjacent to two of four sidewalls of the substantially-pillar shaped bit lines.
12. The device of claim 1, wherein the monolithic, three-dimensional memory device comprises a ReRAM memory device.
13. The device of claim 1, wherein the electrically conductive bit line comprises a local bit line that is electrically connected to a global bit line via a select transistor.
14. The device of claim 1, wherein the non-volatile memory element material comprises a material in which discrete regions of the material located between the bit line and each of the plurality of word lines are controllably alternated between a more conductive state and a less conductive state by appropriate voltages applied to the bit line and the respective word line.
15. The device of claim 14, wherein the non-volatile memory element material comprises a metal oxide.
16. A method of fabricating a memory device, comprising:
providing a stack of alternating layers of a first material and a second material different than the first material over a major surface of a substrate, the first material comprising an electrically conductive word line material and the second material comprising an electrically insulating material;
etching the stack through a mask to form at least one opening having a sidewall defined by the alternating layers of the first material and the second material;
selectively removing the first material relative to the second material through the opening to provide a plurality of recessed portions along the sidewall of the opening;
forming a non-volatile memory element material over the sidewall of the opening and within the recessed portions;
forming an electrically conductive electrode material over the non-volatile memory element material and filling the recessed portions along the sidewall of the opening;
removing a portion of the electrically conductive electrode material from the opening to provide a plurality of isolated electrodes within the recessed portions; and
forming an electrically conductive bit line material within the opening.
17. The method of claim 16, further comprising:
forming a non-linear element between each of the plurality of electrodes and the bit line material within the opening.
18. The method of claim 17, wherein forming a non-linear element comprises forming a layer of insulating material over the non-volatile memory element material and the plurality of electrodes on the sidewall of the opening, wherein the bit line material is formed in the opening over the layer of insulating material.
19. The method of claim 17, wherein the non-linear element comprises a Schottky junction.
20. The method of claim 17, wherein the non-linear element comprises a tunnel junction.
21. The method of claim 17, wherein the non-linear element comprises a metal-insulator-metal (MIM) junction.
22. The method of claim 17, wherein etching the stack through a mask to form at least one opening comprises etching the stack to form a plurality of trenches extending in a first direction substantially parallel to the major surface of the substrate, wherein the layers of the first material in the stack form a plurality of word lines defined between adjacent trenches and elongated in the first direction, and the word lines are spaced apart in a second direction substantially perpendicular to the major surface of the substrate by the alternating layers of the second material.
23. The method of claim 22, wherein each trench comprises two opposing sidewalls defined by the alternating layers of the first material and the second material, wherein the recessed portions are formed along both opposing sidewalls, and the non-volatile memory element material is formed over both opposing trench sidewalls and within the recessed portions.
24. The method of claim 23, further comprising:
filling the plurality of trenches with an insulating material; and
etching the insulating material through a mask to form a plurality of bit line openings in the trench separated by the insulating material, wherein the non-volatile memory element material is exposed on two opposing sidewalls of the bit line openings.
25. The method of claim 24, wherein forming the electrically conductive electrode material comprises at least partially filling the bit line openings with the electrode material, and removing a portion of the electrode material comprises etching the electrode material, stopping the etching at the non-volatile memory element material and the insulating material while leaving isolated portions of the electrode material within the recessed portions along the opposing sidewalls of the bit line openings.
26. The method of claim 25, further comprising:
slimming the mask after the step of at least partially filling the bit line openings with the electrode material and after the step of etching the electrode material; and
forming a layer of an insulating material over the non-volatile memory element material and the isolated electrodes along the sidewalls of the bit line openings to form the non-linear element.
27. The method of claim 26, wherein the layer of insulating material is formed via atomic layer deposition (ALD) over all sidewalls of the bit line opening.
28. The method of claim 25, wherein:
forming the electrically conductive bit line material comprises depositing the bit line material within the bit line openings to form a plurality of substantially-pillar shaped bit lines having a substantially rectangular cross section;
the non-linear element is located adjacent to all four sidewalls of the substantially-pillar shaped bit lines; and
the isolated portions of the electrode material are located adjacent to two of four sidewalls of the substantially-pillar shaped bit lines.
29. The method of claim 17, wherein selectively removing the first material relative to the second material comprises etching through the opening using an etching process having a higher etching rate for the first material than for the second material of the stack of alternating layers.
30. The method of claim 17, wherein the memory device comprises a ReRAM memory device.
31. A method of fabricating a memory device, comprising:
providing a stack of alternating layers of a first material and a second material different than the first material over a major surface of a substrate, the first material comprising an electrically conductive word line material and the second material comprising an electrically insulating material;
etching the stack through a mask to form at least one opening having a sidewall defined by the alternating layers of the first material and the second material;
selectively removing the first material relative to the second material through the opening to provide a plurality of recessed portions along the sidewall of the opening;
forming a non-linear element material over the sidewall of the opening and within the recessed portions;
forming an electrically conductive electrode material over the non-linear memory element material and filling the recessed portions along the sidewall of the opening;
removing a portion of the electrically conductive electrode material from the opening to provide a plurality of isolated electrodes within the recessed portions;
forming a non-volatile memory element material over the sidewall of the opening and adjacent to the plurality of isolated electrodes; and
forming an electrically conductive bit line material within the opening and adjacent to the non-volatile memory element material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A fuel cell, comprising:
a fuel electrode;
an oxidant electrode;
a fuel supply port; and
a porous material layer for transferring a liquid fuel from the fuel supply port to the fuel electrode;
wherein the porous material layer has different values of at least one of a porosity, a permeability and a tortuosity factor depending on the distance of a site of the porous material layer from at least one of the fuel supply port and the fuel electrode.
2. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members, and at least one of the porous material members is arranged in contact with the fuel electrode; and
the farther from the fuel supply port, the higher value of at least one of the porosity and the permeability of the porous material member in contact with the fuel electrode or the lower value of the tortuosity factor of the porous material member in contact with the fuel electrode.
3. The fuel cell according to claim 1, wherein the porous material layer contains particles having a diameter d, and the relationship between the diameter d of the particle and at least one of the porosity and the permeability of the porous material layer satisfies formula (1) given below:
d
=

C
\xd7
K
\u2061

(

1
–
\u025b

)
2
\u025b
3
(
1
)
where d denotes the particle diameter, \u03b5 denotes the porosity, K denotes the permeability, and C denotes a proportional constant falling within a range of between the proportional constant of Carman-Kozeny formula and the proportional constant of Blake-Kozeny formula including the proportional constant of Carman-Kozeny formula and the proportional constant of Blake-Kozeny formula.
4. The fuel cell according to claim 1, wherein the porous material layer includes a laminate prepared by stacking a plurality of porous material members, at least one of the porous material members having different values of at least one of the porosity, the permeability and the tortuosity factor from the other porous material members, and having the thickness to be gradually increased or decreased depending on the distance from the fuel supply port.
5. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members, and the thickness of at least one of the porous material members is gradually decreased with increase in the distance from the fuel supply port.
6. The fuel cell according to claim 1, wherein the porous material layer includes a laminate prepared by stacking a first porous material member having the thickness gradually increased with increase in the distance from the fuel supply port, and a second porous material member smaller than the first porous material member in at least one of the porosity and the permeability, and having the thickness gradually decreased with increase in the distance of a site of the second porous material member from the fuel supply port.
7. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members differing from each other in at least one of the porosity, the permeability and the tortuosity factor, and these porous material members are arranged along the fuel electrode in the order of the value of the porosity, the permeability or the tortuosity factor such that, the farther from the fuel supply port, the higher value of at least one of the porosity and the permeability of the porous material member in contact with the fuel electrode or the lower value of the tortuosity factor of the porous material member in contact with the fuel electrode.
8. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members, and the contact area of at least one of the porous material members with the adjacent porous material member is increased with increase in the distance of a site of the porous material layer from the fuel supply port.
9. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members and at least one shielding member, and the shielding member is arranged between the porous material members such that the area of the surface of at least one of the porous material members on the side of the fuel electrode is gradually increased with increase in the distance from the fuel supply port.
10. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members and at least one shielding member, and the porous material members are inserted into through-holes open in the shielding member such that the open area per unit area of the porous material layer is increased with increase in the distance of a site of the shielding member from the fuel supply port.
11. The fuel cell according to claim 1, wherein the porous material layer includes a plurality of porous material members and a plurality of shielding members, and the shielding members are inserted into through-holes open in the porous material member such that the open area per unit area of the porous material layer is decreased with increase in the distance of a site of the porous material member from the fuel supply port.
12. The fuel cell according to claim 1, wherein the porous material layer is compressed at least partially.
13. The fuel cell according to claim 1, wherein the porous material layer includes a porous material member that is compressed such that the compression ratio is decreased with increase in the distance from the fuel supply port.
14. The fuel cell according to claim 1, wherein the porous material layer includes a porous material member having a tortuosity factor of 1.
15. A fuel cell, comprising:
a fuel electrode;
an oxidant electrode;
a fuel supply port; and
first and second porous material layers for transferring a liquid fuel from the fuel supply port to the fuel electrode;
wherein:
the first porous material layer has different values of at least one of a porosity, a permeability and a tortuosity factor depending on the distance of a site of the first porous material layer from at least one of the fuel supply port and the fuel electrode; and
the second porous material layer is formed of a single porous material member.
16. The fuel cell according to claim 15, wherein the first porous material layer is arranged in contact with the fuel electrode.
17. The fuel cell according to claim 15, wherein the first porous material layer includes a plurality of porous material members differing from each other in at least one of the porosity, the permeability and the tortuosity factor, and these porous material members are arranged along the fuel electrode in the order of the value of the porosity, the permeability or the tortuosity factor such that, the farther from the fuel supply port, the higher value of at least one of the porosity and the permeability of the porous material member in contact with the fuel electrode or the lower value of the tortuosity factor of the porous material member in contact with the fuel electrode.
18. The fuel cell according to claim 15, wherein the first porous material layer includes a laminate prepared by stacking a first porous material member having the thickness gradually increased with increase in the distance from the fuel supply port, and a second porous material member smaller than the than the first porous material member in at least one of the porosity and the permeability, and having the thickness gradually decreased with increase in the distance of a site of the second porous material member from the fuel supply port.
19. The fuel cell according to claim 15, wherein the first material layer includes a shielding member, porous material members inserted into through-holes open in the shielding member such that the open area per unit area of the first porous material layer is increased with increase in the distance from the fuel supply port, and a compressed porous material member that is compressed such that the compression ratio is decreased with increase in the distance from the fuel supply port.
20. A fuel cell, comprising:
a fuel electrode;
an oxidant electrode;
a fuel supply port; and
first and second porous material layers for transferring a liquid fuel from the fuel supply port to the fuel electrode;
wherein:
the first porous material layer is formed of a single porous material member; and
the second porous material layer includes a plurality of porous material members, and the contact area of at least one of the porous material members with the first porous material layer is increased with increase in the distance of a site of the second porous material layer from the fuel supply port.