1461150534-22a6a01b-d436-48d4-b97d-b1e43df25727

What is claimed is:

1. A multiple seed layer structure used to fabricate devices, said multiple seed layer structure comprises:
a substrate;
a patterned insulating layer formed on said substrate, said patterned insulating layer including at least one opening and a top field surface surrounding said at least one opening;
a barrier layer disposed over said patterned insulating layer including over inside bottom and sidewalls surfaces of the at least one opening;
a first seed layer disposed over the barrier layer, said first seed layer is formed by a first deposition technique;
a second seed layer disposed over the first seed layer, said second seed layer is formed by a second deposition technique, the first and second deposition techniques being different; and
an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
2. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a substantially conformal deposition technique and the second deposition technique comprises a substantially non-conformal deposition technique.
3. The multiple seed layer structure of claim 2 wherein said second seed layer being thicker than said first seed layer over the field.
4. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a chemical vapor deposition or electroless deposition technique and the second deposition technique comprises a physical vapor deposition technique.
5. The multiple seed layer structure of claim 4 wherein the first deposition technique comprises a chemical vapor deposition technique.
6. The multiple seed layer structure of claim 4 wherein said second seed layer being thicker than said first seed layer over the field.
7. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a substantially non-conformal deposition technique and the second deposition technique comprises a substantially conformal deposition technique.
8. The multiple seed layer structure of claim 7 wherein said first seed layer being thicker than said second seed layer over the field.
9. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a physical vapor deposition technique and the second deposition technique comprises a chemical vapor deposition technique or electroless deposition technique.
10. The multiple seed layer structure of claim 9 wherein the second deposition technique comprises a chemical vapor deposition technique.
11. The multiple seed layer structure of claim 9 wherein said first seed layer being thicker than said second seed layer over the field.
12. The multiple seed layer structure of claim 1 wherein the electroplated metallic layer comprises Cu.
13. The multiple seed layer structure of claim 1 wherein the electroplated metallic layer comprises Ag.
14. The multiple seed layer structure of claim I wherein the first and second seed layers comprise a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
15. The multiple seed layer structure of claim 1 wherein the first and second seed layers comprise Cu.
16. The multiple seed layer structure of claim 1 wherein the barrier layer is selected from a group consisting of Ta, TaNX, Cr, CrNX, Ti, TiNX, W, WNX, or alloys comprising one or more of these materials.
17. The multiple seed layer structure of claim 1 wherein the barrier layer is deposited by a chemical vapor deposition technique.
18. The multiple seed layer structure of claim 1 wherein the barrier layer is deposited by a physical vapor deposition technique.
19. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a substantially conformal deposition technique and the second deposition technique comprises a substantially non-conformal deposition technique and further comprising at least one additional seed layer deposited over the second seed layer prior to electroplating.
20. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a substantially conformal deposition technique and the second deposition technique comprises a substantially non-conformal deposition technique and further comprising at least one additional seed layer deposited under the first seed layer.
21. The multiple seed layer structure of claim 19 wherein the at least one additional seed layer is formed by a substantially conformal deposition technique.
22. The multiple seed layer structure of claim 20 wherein the at least one additional seed layer is formed by a substantially non-conformal deposition technique.
23. The multiple seed layer structure of claim 21 wherein the first deposition technique comprises a chemical vapor deposition technique, the second deposition technique comprises a physical vapor deposition technique, and the at least one additional seed layer is formed by a chemical vapor deposition technique.
24. The multiple seed layer structure of claim 22 wherein the at least one additional seed layer is formed by a physical vapor deposition technique.
25. The multiple seed layer structure of claim 1 wherein the first deposition technique comprises a substantially non-conformal deposition technique and the second deposition technique comprises a substantially conformal deposition technique and further comprising at least one additional seed layer formed over the second seed layer prior to electroplating.
26. The multiple seed layer structure of claim 25 wherein the at least one additional seed layer is formed by a substantially non-conformal deposition technique.
27. The multiple seed layer structure of claim 26 wherein the first deposition technique comprises a physical vapor deposition technique, the second deposition technique comprises a chemical vapor deposition technique, and the at least one additional seed layer is formed by a physical vapor deposition technique.
28. A metallic interconnect fabricated by using the multiple seed layer structure of claim 1, wherein the electroplated metallic layer overlying the opening and overlying the field, and the first and second seed layers overlying the field, and the barrier layer overlying the field, are substantially removed by a removal technique, said removal technique comprises one or more of a mechanical polishing technique, a chemical mechanical polishing technique, a wet etching technique, and a dry etching technique.
29. The metallic interconnect of claim 28 wherein the first deposition technique comprises a substantially conformal deposition technique and the second deposition technique comprises a substantially non-conformal deposition technique.
30. The metallic interconnect of claim 29 wherein said second seed layer being thicker than said first seed layer over the field.
31. The metallic interconnect of claim 28 wherein:
the first deposition technique comprises a chemical vapor deposition (CVD) technique or an electroless technique; and
the second deposition technique comprises a physical vapor deposition (PVD) technique.
32. The metallic interconnect of claim 31 wherein the first deposition technique comprises a chemical vapor deposition (CVD) technique.
33. The metallic interconnect of claim 31 wherein said second seed layer being thicker than said first seed layer over the field.
34. The metallic interconnect of claim 28 wherein the first deposition technique comprises a substantially non-conformal deposition technique and the second deposition technique comprises a substantially conformal deposition technique.
35. The metallic interconnect of claim 34 wherein said first seed layer being thicker than said second seed layer over the field.
36. The metallic interconnect of claim 28 wherein:
the first deposition technique comprises a physical vapor deposition (PVD) technique; and
the second deposition technique comprises a chemical vapor deposition (CVD) or an electroless technique.
37. The metallic interconnect of claim 36 wherein the second deposition technique comprises a chemical vapor deposition (CVD) technique.
38. The metallic interconnect of claim 36 wherein said first seed layer being thicker than said second seed layer over the field.
39. The metallic interconnect of claim 29 wherein the first seed layer and the second seed layer comprise a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
40. The metallic interconnect of claim 34 wherein the first seed layer and the second seed layer comprise a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
41. The metallic interconnect of claim 29 wherein the first and second seed layers comprise Cu.
42. The metallic interconnect of claim 34 wherein the first and second seed layers comprise Cu.
43. The metallic interconnect of claim 33 wherein the first seed layer has a thickness in a range of about 50 to about 500 over the field and the second seed layer has a thickness in a range of about 100 to about 2,000 over the field.
44. The metallic interconnect of claim 33 wherein the first seed layer has a thickness in a range of about 100 to about 300 over the field and the second seed layer has a thickness in a range of about 300 to about 1,000 over the field.
45. The metallic interconnect of claim 38 wherein the first seed layer has a thickness in a range of about 100 to about 2,000 over the field and the second seed layer has a thickness in a range of about 50 to about 500 over the field.
46. The metallic interconnect of claim 38 wherein the first seed layer has a thickness in a range of about 300 to about 1,000 over the field and the second seed layer has a thickness in a range of about 100 to about 300 over the field.
47. The metallic interconnect of claim 28 wherein the barrier layer is selected from a group consisting of Ta, TaNX, Cr, CrNX, Ti, TiNX, W, WNX, or alloys comprising one or more of these materials.
48. The metallic interconnect of claim 28 wherein the barrier layer is deposited by a chemical vapor deposition technique.
49. The metallic interconnect of claim 28 wherein the barrier layer is deposited by a physical vapor deposition technique.
50. The metallic interconnect of claim 28 wherein the barrier layer has a thickness in a range of about 30 to about 500 .
51. The metallic interconnect of claim 28 wherein the barrier layer has a thickness in a range of about 50 to about 300 .
52. A multiple seed layer structure used to fabricate copper interconnects, said multiple seed layer structure comprising:
a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer deposited over the patterned insulating layer including overlying the field and inside surfaces of the at least one opening, the barrier layer comprising a refractory metal or an alloy comprising a refractory metal;
a first copper seed layer, formed by chemical vapor deposition, disposed over the barrier layer, the first copper seed layer substantially continuously covering inside surfaces of the at least one opening;
a second copper seed layer, formed by physical vapor deposition, disposed over the first copper seed layer, said second seed layer being thicker than said first seed layer over the field; and
electroplated copper over the second seed layer.
53. A multiple seed layer structure used to fabricate copper interconnects, said multiple seed layer structure comprising:
a patterned insulating layer formed over a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer formed over the patterned insulating layer including overlying the field and inside surfaces of the at least one opening, the barrier layer comprising a refractory metal or an alloy comprising a refractory metal;
a first copper seed layer, formed by physical vapor deposition, disposed over the barrier layer;
a second copper seed layer, formed by chemical vapor deposition, disposed over the first copper seed layer, the second copper seed layer substantially continuously covering inside surfaces of the at least one opening, said first seed layer being thicker than said second seed layer over the field; and
electroplated copper over the second seed layer.
54. A multiple seed layer structure used to fabricate metallic interconnects, said multiple seed layer structure comprising:
a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer formed over the field and inside surfaces of the at least one opening;
two or more seed layers deposited over the barrier layer using two or more different deposition techniques; and
an electroplated metallic layer formed over the two or more seed layers, the electroplated metallic layer comprising a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
55. A metallic filled via or trench interconnect fabricated by using a multiple seed layer structure, said multiple seed layer structure comprising:
a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer disposed over the patterned insulating layer, including inside surfaces of the at least one opening;
a substantially conformal seed layer disposed over the barrier layer, including inside surfaces of the at least one opening, said substantially conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals;
a substantially non-conformal seed layer disposed over the substantially conformal seed layer, said substantially non-conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field; and
an electroplated metallic layer deposited over the substantially non-conformal seed layer, said electroplated metallic layer comprising a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
56. A metallic filled via or trench interconnect fabricated by using a multiple seed layer structure, said multiple seed layer structure comprising:
a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer disposed over the patterned insulating layer, including inside surfaces of the at least one opening;
a substantially non-conformal seed layer disposed over the barrier layer, said substantially non-conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals;
a substantially conformal seed layer disposed over the substantially non-conformal seed layer, said substantially conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field; and
an electroplated metallic layer deposited over the substantially conformal seed layer, said electroplated metallic layer comprising a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
57. A metallic interconnect, said metallic interconnect comprises:
a barrier layer disposed over an opening in an insulating layer including over inside bottom and sidewall surfaces of the opening;
a first seed layer disposed over the barrier layer, which first seed layer is formed by a first deposition technique;
a second seed layer disposed over the first seed layer, which second seed layer is formed by a second deposition technique, the first and second deposition techniques being different; and
an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for training soccer players comprising:
1) providing a soccer ball;
2) providing a ball catching system comprising:
(a) a frame comprising a rigid horizontal member and two rigid vertical members;
(b) a soccer training net comprising a flexible body component having a top edge, a bottom edge and two side edges, said body component having a plurality of pockets covering all the surface of said soccer training net, said pockets having a substantially square aperture, said pockets consisting of two rectangular nets, a front net with a predetermined aperture larger than the diameter of said soccer ball and a rear net with a predetermined aperture smaller than the diameter of said soccer ball whereby said soccer training net can capture and hold in place at point of impact approximately 90% of said soccer balls passing through said apertures of said front net, whereby said soccer training net can capture and hold in place at point of impact approximately 80% of said soccer balls hitting back of said soccer training net, wherein the two side edges of said rear net are approximately 1.75 to 2.50 times the length of the two side edges of said front net;
(c) said soccer training net being attached on said frame:
(d) said soccer training net being secured to the ground,

3) providing several flags, said flags being capable of being attached to any of said pockets on said soccer training net whereby soccer players can improve shooting skills and accuracy and develop a variety of penalty shots and the art of bending said soccer ball.
2. The method of claim 1 including the step of providing the said front net and said rear net in different colors.
3. The method of claim 1 including the step of having the said front net and said rear net made of material selected from the group consisting of synthetic and natural fibers such as knitted nylon, cotton, hemp, polypropylene, polyethylene, rayon and polyester.
4. The method of claim 1 whereby said front net and said rear net are joined together with threads from the group consisting of synthetic and natural fibers such as knitted nylon, cotton, hemp, polypropylene, polyethylene, rayon and polyester.
5. The method of claim 1 including the step of developing and using practice drills using both sides of said soccer training net whereby several drills can be conducted simultaneously, saving valuable coaching time, increasing player participation and providing a superior cardiovascular workout for players.
6. The method of claim 1 whereby the said flags can be of different colors.
7. A method for training soccer players comprising:
1) providing a soccer ball;
2) providing a ball catching system comprising:
(a) a frame comprising a rigid horizontal member and two rigid vertical members;
(b) a soccer training net comprising a flexible body component having a top edge, a bottom edge and two side edges, said body component having a plurality of pockets covering all the surface of said soccer training net, said pockets having a substantially square aperture, said pockets consisting of two rectangular nets, a front net with a predetermined aperture larger than the diameter of said soccer ball and a rear net with a predetermined aperture smaller than the diameter of said soccer ball whereby said soccer training net can capture and hold in place at point of impact approximately 90% of said soccer balls passing through said apertures of said front net, whereby said soccer training net can capture and hold in place at point of impact approximately 80% of said soccer balls hitting back of said soccer training net, wherein the vertical length of said rear net in each pocket are approximately 1.75 to 2.50 times the vertical length of said front net;
(c) said soccer training net being attached on said frame;
(d) said soccer training net being secured to the ground,

3) providing several flags, said flags being capable of being attached to any of said pockets on said soccer training net whereby soccer players can improve shooting skills and accuracy and develop a variety of penalty shots and the art of bending said soccer ball.
8. The method of claim 7 including the step of providing the said front net and said rear net in different colors.
9. The method of claim 7 including the step of having the said front net and said rear net made of material selected from the group consisting of synthetic and natural fibers such as knitted nylon, cotton, hemp, polypropylene, polyethylene; rayon and polyester.
10. The method of claim 7 whereby said front net and said rear net are joined together with threads from the group consisting of synthetic and natural fibers such as knitted nylon, cotton, hemp, polypropylene, polyethylene, rayon and polyester.
11. The method of claim 7 including the step of developing and using practice drills using both sides of said soccer training net whereby several drills can be conducted simultaneously, saving valuable coaching time, increasing player participation and providing a superior cardiovascular workout for players.
12. The method of claim 7 whereby the said flags can be of different colors.

1461150523-020a6b78-f3ed-44eb-adee-0ca66c824047

1. A method for manufacturing a SERS sensing device, the method comprising:
providing a silicon substrate;
creating a silane layer on a surface of the silicon substrate; and
creating a plurality of plasmonic nanostructures on the silane layer, wherein the:

creating a plurality of plasmonic nanostructures on the silane layer comprises completely covering the silane layer with a metallic plasmonic layer.
2. The method according to claim 1, wherein creating the silane layer comprises immersing the substrate in a silane solution for 2.5 to 17 hours.
3. The method according to claim 1, wherein creating a plurality of plasmonic nanostructures further comprises:
depositing a resist coating on the metallic plasmonic layer;
lithographically patterning the resist coating;
etching the metallic plasmonic layer and the silane layer using the patterned resist coating as a mask; and
removing the patterned resist coating.
4. The method according to claim 1, further comprising depositing receptor molecules on the surface of the silicon substrate, the receptor molecules being configured to bind to plasmonic nanostructures and to bind an analyte.
5. The method according to claim 4, wherein the analyte is glucose and wherein the receptor molecules are boronic acid derivatives.
6. The method according to claim 1, wherein the silane layer is a mercapto-silane layer.
7. The method according to claim 1, wherein the metallic plasmonic layer is a gold, silver or copper layer.
8. The method according to claim 1, wherein the SERS sensing device is manufactured using CMOS compatible process steps.
9. A SERS sensing device obtainable by the method of claim 1.
10. An implantable SERS sensing device, the device comprising:
a silicon substrate;
a plurality of plasmonic nanostructures located on a surface of the silicon substrate, each plasmonic nanostructure comprising a silane layer and a metallic plasmonic layer. wherein:

the silane layer and the metallic plasmonic layer of different plasmonic nanostructures are separated from each other, the silane layer thereby being only present in between the silicon substrate and the metallic plasmonic layer.
11. The implantable SERS sensing device according to claim 10, wherein the adhesion strength between the metallic plasmonic layer of each plasmonic nanostructure and the silicon substrate is at least 44 Nmm2.
12. The implantable SERS sensing device according to claim 10, wherein the silane layer is a mercapto-silane layer.
13. The implantable SERS sensing device according claim 10, wherein a plasmonic nanostructure comprises a receptor molecule configured to bind an analyte.
14. The implantable SERS sensing device according to claim 13, wherein the analyte is glucose and wherein the receptor molecule is a boronic acid derivative.
15. The implantable SERS sensing device according to claim 10, wherein the metallic plasmonic layer is a gold, silver or copper layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An audio or video decoder for decoding an encoded multi-channel audio or video signal, the encoded multi-channel audio or video signal comprising an encoded first combination signal generated based on a combination rule for combining a first channel audio or video signal and a second channel audio or video signal of a multi-channel audio or video signal, an encoded prediction residual signal and prediction information, comprising:
a signal decoder for decoding the encoded first combination signal to acquire a decoded first combination signal, and for decoding the encoded residual signal to acquire a decoded residual signal; and
a decoder calculator for calculating a decoded multi-channel signal comprising a decoded first channel signal, and a decoded second channel signal using the decoded residual signal, the prediction information, the decoded first combination signal and a prediction direction indicator, so that the decoded first channel signal and the decoded second channel signal are at least approximations of the first channel signal and the second channel signal of the multi-channel signal.
2. The audio or video decoder in accordance with claim 1, in which the prediction direction indicator is comprised by the encoded multi-channel signal, and in which the audio or video decoder further comprises an input interface for extracting the prediction direction indicator and for forwarding the prediction direction indicator to the decoder calculator.
3. The audio or video decoder in accordance with claim 1, in which the decoder calculator is configured for using a first calculation rule for calculating the decoded multi-channel signal in case of a first state of the prediction direction indicator and for using a second different calculation rule for calculating the decoded multi-channel signal in case of a second different state of the prediction direction indicator.
4. The audio or video decoder in accordance with claim 3, in which the decoded first combination signal comprises a mid signal, in which the first calculation rule comprises the calculation of a side signal from the decoded first combination signal and the decoded residual signal; or
in which the decoded first combination signal comprises a side signal, and in which the second calculation rule comprises the calculation of a mid signal from the decoded first combination signal and the decoded residual signal.
5. The audio or video decoder in accordance with claim 3, in which the decoded first combination signal comprises a mid signal, and in which the first calculation rule comprises the calculation of the decoded first channel signal and the calculation of the decoded second channel signal using the mid signal, the prediction information and the decoded residual signal without an explicit calculation of the side signal; or
in which the decoded first combination signal comprises a side signal, and in which the second calculation rule comprises the calculation of the decoded first channel signal and the calculation of the decoded second channel signal using the side signal, the prediction information and the decoded residual signal without an explicit calculation of the mid signal.
6. The audio or video decoder in accordance with claim 1, in which the decoder calculator is configured for using the prediction information where the prediction information comprises a real-valued portion different from zero andor an imaginary portion different from zero.
7. The audio or video decoder of claim 1, in which the decoder calculator comprises:
a predictor for applying the prediction information to the decoded first combination signal or to a signal derived from the decoded first combination signal to acquire a prediction signal;
a combination signal calculator for calculating a second combination signal by combining the decoded residual signal and the prediction signal; and
a combiner for combining the decoded first combination signal and the second combination signal to acquire a decoded multi-channel audio or video signal comprising the decoded first channel signal and the decoded second channel signal,
wherein in case of a first state of the prediction direction indicator, the first combination signal is a sum signal and the second combination signal is a difference signal, or
wherein in case of a second state of the prediction direction indicator, the first combination signal is a difference signal and the second combination signal is a sum signal.
8. The audio or video decoder in accordance with claim 1,
in which the encoded first combination signal and the encoded residual signal have been generated using an aliasing generating time-spectral conversion,
wherein the decoder further comprises:
a spectral-time converter for generating a time-domain first channel signal and a time-domain second channel signal using a spectral-time conversion algorithm matched to the time-spectral conversion algorithm;
an overlapadd processor for conducting an overlap-add processing for the time-domain first channel signal and for the time-domain second channel signal to acquire an aliasing-free first time-domain signal and an aliasing-free second time-domain signal.
9. The audio or video decoder in accordance with claim 1, in which the prediction information comprises a real-valued factor different from zero,
in which the predictor is configured for multiplying the decoded first combination signal by the real factor to acquire a first part of the prediction signal, and
in which the combination signal calculator is configured for linearly combining the decoded residual signal and the first part of the prediction signal.
10. The audio or video decoder in accordance with claim 1, in which the prediction information comprises an imaginary factor different from zero,
in which the predictor is configured for estimating an imaginary part of the decoded first combination signal using a real-valued part of the decoded first combination signal,
in which the predictor is configured for multiplying the imaginary part of the decoded first combination signal by the imaginary factor of the prediction information to acquire a second part of the prediction signal; and
in which the combination signal calculator is configured for linearly combining the first part of the prediction signal and the second part of the prediction signal and the decoded residual signal to acquire a second combination signal.
11. The audio or video decoder in accordance with claim 7,
in which the predictor is configured for filtering at least two time-subsequent frames, where one of the two time-subsequent frames precedes or follows a current frame of the first combination signal to acquire an estimated imaginary part of a current frame of the first combination signal using a linear filter.
12. The audio or video decoder in accordance with claim 7,
in which the decoded first combination signal comprises a sequence of real-valued signal frames, and
in which the predictor is configured for estimating an imaginary part of the current signal frame using only the current real-valued signal frame or using the current real-valued signal frame and either only one or more preceding or only one or more following real-valued signal frames or using the current real-valued signal frame and one or more preceding real-valued signal frames and one or more following real-valued signal frames.
13. An audio or video encoder for encoding a multi-channel audio or video signal comprising two or more channel signals, comprising:
an encoder calculator for calculating a first combination signal and a prediction residual signal using a first channel signal and a second channel signal and prediction information and a prediction direction indicator, so that a prediction residual signal, when combined with a prediction signal derived from the first combination signal or a signal derived from the first combination signal and the prediction information results in a second combination signal, the first combination signal and the second combination signal being derivable from the first channel signal and the second channel signal using a combination rule;
an optimizer for calculating the prediction information so that the prediction residual signal fulfills an optimization target;
a prediction direction calculator for calculating a prediction direction indicator indicating a prediction direction associated with the prediction residual signal;
a signal encoder for encoding the first combination signal and the prediction residual signal to acquire an encoded first combination signal and an encoded prediction residual signal; and
an output interface for combining the encoded first combination signal, the encoded prediction residual signal and the prediction information to acquire an encoded multi-channel audio or video signal.
14. The audio or video encoder in accordance with claim 13, in which the encoder calculator comprises:
a combiner for combining the first channel signal and the second channel signal in two different ways to acquire the first combination signal and the second combination signal;
a predictor for applying the prediction information to the first combination signal or a signal derived from the first combination signal to acquire a prediction signal or for applying prediction information to the second combination signal or a signal derived from the second combination signal to acquire a prediction signal depending on the prediction direction indicator; and
a residual signal calculator for calculating the prediction residual signal by combining the prediction signal and the second combination signal or by combining the prediction signal and the first combination signal depending on the prediction direction indicator.
15. The audio or video encoder in accordance with claim 13,
in which the first channel signal is a spectral representation of a block of samples;
in which the second channel signal is a spectral representation of a block of samples,
wherein the spectral representations are either pure real-valued spectral representations or pure imaginary spectral representations,
in which the optimizer is configured for calculating the prediction information as a real-valued factor different from zero andor as an imaginary factor different from zero, and
in which the encoder calculator comprises a real-to-imaginary transformer or an imaginary-to-real transformer for deriving a transform spectral representation from the first combination signal or from the second combination signal depending on the prediction direction indicator, and
in which the encoder calculator is configured to calculate the first combination signal or the second combination signal depending on the prediction direction indicator and to calculate the prediction residual signal from the transformed spectrum and the imaginary factor.
16. The encoder in accordance with claim 13,
in which the predictor is configured for multiplying the first combination signal by a real part of the prediction information to acquire a first part of the prediction signal;
for estimating an imaginary part of the first combination signal or of the second combination signal using the first combination signal or the second combination signal;
for multiplying the imaginary part of the first or the second combined signal by an imaginary part of the prediction information to acquire a second part of the prediction signal; and
wherein the residual calculator is configured for linearly combining the first part signal of the prediction signal or the second part signal of the prediction signal and the second combination signal or the first combination signal to acquire the prediction residual signal.
17. A method of decoding an encoded multi-channel audio or video signal, the encoded multi-channel audio or video signal comprising an encoded first combination signal generated based on a combination rule for combining a first channel audio or video signal and a second channel audio or video signal of a multi-channel audio or video signal, an encoded prediction residual signal and prediction information, comprising:
decoding the encoded first combination signal to acquire a decoded first combination signal, and decoding the encoded residual signal to acquire a decoded residual signal; and
calculating a decoded multi-channel signal comprising a decoded first channel signal, and a decoded second channel signal using the decoded residual signal, the prediction information and the decoded first combination signal, so that the decoded first channel signal and the decoded second channel signal are at least approximations of the first channel signal and the second channel signal of the multi-channel signal, wherein the prediction information comprises a real-valued portion different from zero andor an imaginary portion different from zero.
18. A method of encoding a multi-channel audio or video signal comprising two or more channel signals, comprising:
calculating a first combination signal and a prediction residual signal using a first channel signal and a second channel signal and prediction information, so that a prediction residual signal, when combined with a prediction signal derived from the first combination signal or a signal derived from the first combination signal and the prediction information results in a second combination signal, the first combination signal and the second combination signal being derivable from the first channel signal and the second channel signal using a combination rule;
calculating the prediction information so that the prediction residual signal fulfills an optimization target;
encoding the first combination signal and the prediction residual signal to acquire an encoded first combination signal and an encoded residual signal; and
combining the encoded first combination signal, the encoded prediction residual signal and the prediction information to acquire an encoded multi-channel audio or video signal.
19. A computer program for performing, when running on a computer or a processor, the method of decoding an encoded multi-channel audio or video signal, the encoded multi-channel audio or video signal comprising an encoded first combination signal generated based on a combination rule for combining a first channel audio or video signal and a second channel audio or video signal of a multi-channel audio or video signal, an encoded prediction residual signal and prediction information, said method comprising:
decoding the encoded first combination signal to acquire a decoded first combination signal, and decoding the encoded residual signal to acquire a decoded residual signal; and
calculating a decoded multi-channel signal comprising a decoded first channel signal, and a decoded second channel signal using the decoded residual signal, the prediction information and the decoded first combination signal, so that the decoded first channel signal and the decoded second channel signal are at least approximations of the first channel signal and the second channel signal of the multi-channel signal, wherein the prediction information comprises a real-valued portion different from zero andor an imaginary portion different from zero.
20. A computer program for performing, when running on a computer or a processor, the method of encoding a multi-channel audio or video signal comprising two or more channel signals, said method comprising:
calculating a first combination signal and a prediction residual signal using a first channel signal and a second channel signal and prediction information, so that a prediction residual signal, when combined with a prediction signal derived from the first combination signal or a signal derived from the first combination signal and the prediction information results in a second combination signal, the first combination signal and the second combination signal being derivable from the first channel signal and the second channel signal using a combination rule;
calculating the prediction information so that the prediction residual signal fulfills an optimization target;
encoding the first combination signal and the prediction residual signal to acquire an encoded first combination signal and an encoded residual signal; and
combining the encoded first combination signal, the encoded prediction residual signal and the prediction information to acquire an encoded multi-channel audio or video signal.
21. An encoded multi-channel audio or video signal comprising an encoded first combination signal generated based on a combination rule for combining a first channel audio or video signal and a second channel audio or video signal of a multi-channel audio or video signal, an encoded prediction residual signal, prediction information, and a prediction direction indicator indicating a prediction direction associated with the encoded prediction residual signal.