1. A structure of a salicided MOS device and a one-sided salicided MOS device, comprising:
a semiconductor substrate;
a first MOS device and a second MOS device formed on the substrate, wherein the first MOS device comprises a first gate structure formed on the substrate, first and second doped regions formed in the substrate, and the second MOS device comprises a second gate structure formed on the substrate, and third and fourth doped regions formed in the substrate;
a spacer formed on a sidewall of the second gate structure, wherein the spacer is located on part of the fourth doped region;
a conformal insulation layer formed over the fourth doped region and a side of the second gate structure near the fourth doped region, wherein part of the conformal insulation layer overlies the spacer;
a salicided layer formed on the first gate structure, the first doped region, the second doped region, the second gate structure and the third doped region but not the fourth doped region; and
a capacitor electrically coupled to the fourth doped region, wherein part of the conformal insulation layer overlies the capacitor.
2. The structure according to claim 1, wherein the conformal insulation layer is manufactured by the steps of:
forming a conformal previous insulation layer on the first MOS device, the second MOS device and the substrate;
forming a sacrificial layer on the previous insulation layer;
etching back the sacrificial layer until the previous insulation layer on top surfaces of the first and the second gate structures is exposed, wherein a remaining sacrificial layer is left above the substrate;
removing the previous insulation layer on the top surfaces of the first and second gate structures;
removing the remaining sacrificial layer; and
removing the previous insulation layer on the first, second, and third doped regions.
3. The structure according to claim 2, wherein the sacrificial layer is an organic layer.
4. The structure according to claim 1, further comprising a first spacer formed on a first sidewall of the first gate structure, a second spacer formed on a second sidewall of the first gate structure and a third spacer formed on a third sidewall of the second gate structure, wherein the first spacer is located on part of the first doped region, the second spacer is located on part of the second doped region and the third spacer is located on part of the third doped region.
5. The structure according to claim 1, wherein a double insulator comprising the spacer and part of the conformal insulation layer is disposed on the sidewall of the second gate structure.
6. A structure of a one-sided salicided MOS device, suitable for a CMOS image sensor, the CMOS image sensor comprising:
a semiconductor substrate;
a MOS device formed on the substrate, wherein the MOS device has a gate structure on the substrate, first and second doped regions formed in the substrate, a first spacer formed on a first sidewall of the gate structure and a second spacer formed on a second sidewall of the gate structure, wherein the first spacer is located on part of the first doped region and the second spacer is located on part of the second doped region;
a photodiode region formed in the substrate, wherein the photodiode region electrically couples to the second doped region;
a conformal insulation layer formed on the second doped region, the second spacer and the photodiode region; and
a salicided layer formed on the gate structure and the first doped region but not the second doped region and the photodiode region, wherein the conformal insulation layer is lower than a top surface of the salicided layer on the gate structure;
wherein a double insulator, comprising the second spacer and part of the conformal insulation layer, is disposed on the second sidewall of the gate structure, and a single insulator, comprising the first spacer, is disposed on the first sidewall of the gate structure.
7. The structure according to claim 6, wherein the conformal insulation layer is manufactured by the steps of:
forming a conformal previous insulation layer on the MOS device, the photodiode region and the substrate;
forming an organic layer on the previous insulation layer;
performing anisotropic etching to remove part of the organic layer until the previous insulation layer on the top surface of the gate structure is exposed, wherein a remaining organic layer is left above the substrate;
removing the previous insulation layer on the top surface of the gate structure;
removing the remaining organic layer; and
removing the previous insulation layer on the first doped region.
8. The structure according to claim 7, wherein the conformal previous insulation layer is a SiO2 layer.
9. The structure according to claim 7, wherein the organic layer comprises propylene glycol monomethyl ether.
10. The structure according to claim 6, wherein part of the conformal insulation layer directly overlies a top surface of the photodiode region.
11. The structure according to claim 6, wherein the first and second spacers comprise SiN or SiON.
12. The structure according to claim 6, wherein the conformal insulation layer is a SiO2 layer.
13. The structure according to claim 6, wherein the salicided layer is a tungsten suicide, titanium silicide, molybdenum silicide, tantalum suicide or cobalt silicide layer.
14. A structure of a salicided MOS device and a one-sided salicided MOS device, comprising:
a semiconductor substrate;
a first MOS device and a second MOS device formed on the substrate, wherein the first MOS device comprises a first gate structure formed on the substrate, first and second doped regions formed in the substrate, and the second MOS device comprises a second gate structure formed on the substrate, and third and fourth doped regions formed in the substrate;
a conformal insulation layer formed over the fourth doped region and a side of the second gate structure near the fourth doped region;
a salicided layer formed on the first gate structure, the first doped region, the second doped region, the second gate structure and the third doped region but not the fourth doped region, wherein the conformal insulation layer is lower than a top surface of salicided layer on the second gate structure; and
a capacitor electrically coupled to the fourth doped region, wherein part of the conformal insulation layer overlies the capacitor.
15. The structure according to claim 14, wherein the conformal insulation layer is manufactured by the steps of:
forming a conformal previous insulation layer on the first MOS device, the second MOS device and the substrate;
forming a sacrificial layer on the previous insulation layer;
etching back the sacrificial layer until the previous insulation layer on top surfaces of the first and the second gate structures is exposed, wherein a remaining sacrificial layer is left above the substrate;
removing the previous insulation layer on the top surfaces of the first and second gate structures;
removing the remaining sacrificial layer; and
removing the previous insulation layer on the first, second, and third doped regions.
16. The structure according to claim 14, further comprising a first spacer formed on a first sidewall of the first gate structure, a second spacer formed on a second sidewall of the first gate structure, a third spacer formed on a third sidewall of the second gate structure and a fourth spacer formed on a fourth sidewall of the second gate structure, wherein the first spacer is located on part of the first doped region, the second spacer is located on part of the second doped region, the third spacer is located on part of the third doped region and the fourth spacer is located on part of the fourth doped region, wherein part of the conformal insulation layer overlies the fourth spacer.
17. The structure according to claim 16, wherein a double insulator comprising the fourth spacer and part of the conformal insulation layer is disposed on the fourth sidewall of the second gate structure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for preparing a spinning solution of ultra-high molecular weight polyethylene fiber, comprising:
mixing a dissolved solution of ultra-high molecular weight polyethylene with a swollen solution of ultra-high molecular weight polyethylene at a weight ratio of 0.42 to 2.85, to obtain a spinning solution in which the content of the ultra-high molecular weight polyethylene is 10% to 15% by weight;
wherein the swollen solution of ultra-high molecular weight polyethylene has a degree of swelling of 1 to 2;
wherein the content of the ultra-high molecular weight polyethylene in the swollen solution of ultra-high molecular weight polyethylene is 10 to 50% by weight; and
wherein the weight ratio of the ultra-high molecular weight polyethylene in the swollen solution of ultra-high molecular weight polyethylene to the ultra-high molecular weight polyethylene in the dissolved solution of ultra-high molecular weight polyethylene is 2.5 to 70;
wherein the swollen solution of ultra-high molecular weight polyethylene is prepared by:
adding a powder of ultra-high molecular weight polyethylene to a first portion of a solvent under stirring;
adding a second portion of the solvent and a first emulsified solvent to the first portion of the solvent to obtain a first mixture; and
heating the first mixture to 90\xb0 C. to 130\xb0 C. and holding at a temperature for swelling to obtain the swollen solution of ultra-high molecular weight polyethylene;
wherein the first emulsified solvent is formed from a third portion of the solvent, an antioxidant and a surfactant through emulsification; and
wherein the weight ratio of the first portion of the solvent:the second portion of the solvent:the third portion of the solvent:the antioxidant:the surfactant is 45 to 55:45 to 55:1 to 20:0.5 to 5:0.05 to 0.1; and
wherein the dissolved solution of ultra-high molecular weight polyethylene is prepared by:
adding a second emulsified solvent, a fourth emulsified solvent and a fifth portion of solvent to a fourth portion of the solvent under well stirring to obtain a second mixture, and then heating the second mixture to 100\xb0 C. to 190\xb0 C. under stirring to obtain the dissolved solution of ultra-high molecular weight polyethylene;
wherein the second emulsified solvent is formed from a sixth portion of the solvent and the ultra-high molecular weight polyethylene in a proportion of 1 to 5:0.4 to 0.6 through emulsification;
wherein the fourth emulsified solvent is formed from a seventh portion of the solvent and an antioxidant through emulsification; and
wherein the weight ratio of the fourth portion of the solvent:the fifth portion of the solvent:the sixth portion of the solvent:the seventh portion of the solvent is 67 to 75:15 to 25:2 to 10:2 to 4.
2. The method of claim 1, wherein the weight ratio of the dissolved solution of ultra-high molecular weight polyethylene to the swollen solution of ultra-high molecular weight polyethylene is 1.0 to 2.5.
3. The method of claim 2, wherein the content of the ultra-high molecular weight polyethylene in the swollen solution of ultra-high molecular weight polyethylene is 20 to 30% by weight.
4. The method of claim 3, wherein the weight ratio of the ultra-high molecular weight polyethylene in the swollen solution of ultra-high molecular weight polyethylene to the ultra-high molecular weight polyethylene in the dissolved solution of ultra-high molecular weight polyethylene is 10 to 30.
5. The method of claim 4, wherein the content of the ultra-high molecular weight polyethylene in the spinning solution of ultra-high molecular weight polyethylene fiber is 11% to 14% by weight.
6. The method of claim 5, wherein the content of the ultra-high molecular weight polyethylene in the spinning solution of ultra-high molecular weight polyethylene fiber is 12% to 13% by weight.
7. The method of claim 1, wherein a weight average molecular weight of the ultra-high molecular weight polyethylene in the spinning solution of ultra-high molecular weight polyethylene fiber is 3\xd7106 to 5\xd7106.
8. The method of claim 7, wherein a solvent in the spinning solution of ultra-high molecular weight polyethylene fiber is a mixed solvent obtained by mixing cyclane and alkane in a proportion of 85\u02dc90:10 to 15, and wherein the cyclane has 25 to 50 carbon atoms and the alkane has 25 to 50 carbon atoms.