Author: claimsbot

What is claimed is:

1. A dielectric filter having a notch pattern comprising:
a dielectric block, in which a ground face plated with conductive metal for all the rest portions excepting an upper face thereof and both side given portions of one side wall face connected to the upper face is formed and a plurality of resonator patterns and a plurality of metal patterns plated with the conductive metal are formed on the upper face as a non-conductive part, wherein the resonator patterns are separated from the metal patterns by predetermined distances;
input electrode provided on one portion out of non-conductive portions and formed so that a signal from the outside may be inputted thereto;
at least two resonators formed piercing through upper and lower faces of the dielectric block, a lower end part of which is short-circuited on a lower face as the ground face of the dielectric block, wherein two resonators are connected with each other through a pattern formed on the upper face of the dielectric block in order to resonate and wave-transfer a signal inputted through the input electrode; and
output electrode provided in the rest one portion out of the non-conductive portions on one side wall face of the dielectric block, the output electrode being for outputting a signal resonated in each resonator to the outside.
2. The dielectric filter of claim 1, wherein an electric length of the pattern for coupling the resonators is 4.
3. The dielectric filter of claim 1, wherein the resonator patterns are connected to upper end outer circumference faces of the resonators and distanced from one another to form a plural number of first opening parts which are respectively opened electrically between them.
4. The dielectric filter of claim 1, wherein the metal patterns includes a first set of metal patterns and a second set of metal patterns.
5. The dielectric filter of claim 4, wherein the first set of the metal patterns includes:
a first pattern formed on an upper face center of the dielectric block so as to partition off one out of the first opening parts and extended from one side wall face of the dielectric block as the ground face to a constant portion of the dielectric block upper face as the non-conductive part; and
a second pattern distanced by a given interval from one side of the resonator pattern, for forming a second opening part between the respective resonator patterns and the second pattern and a third opening part between the first pattern and the second pattern.
6. The dielectric filter of claim 4, wherein the first set of the metal patterns includes:
a central pattern formed on the upper face center of the dielectric block so as to partition off the plurality of resonators, both end parts of which are individually connected to both side plated wall faces of the dielectric block;
a pair of third patterns respectively distanced by the constant interval from both sides of the resonator patterns formed on one side of the central pattern; and
a pair of fourth patterns respectively distanced by the constant interval from both sides of the resonator patterns formed on another side of the central pattern.
7. The dielectric filter of claim 4, wherein the first set of the metal patterns includes a pair of fifth patterns respectively distanced by the constant interval from both sides of the respective resonator patterns.
8. The dielectric filter of claim 4, wherein the first set of the metal patterns includes:
a pair of sixth patterns respectively distanced by the constant interval from both sides of the respective resonator patterns; and
a seventh pattern formed on the upper face center of the dielectric block, both end parts of which are individually connected to two of the sixth patterns, two resonator patterns positioned on both sides of said seventh pattern being coupled by the electric field with each other.
9. The dielectric filter of claim 4, wherein the second set of the metal patterns includes;
an input electrode pattern distanced by a constant interval from one side of the plurality of resonators and connected to the input electrode to form an input capacitance at a gap with the input electrode; and
an output electrode pattern distanced by the constant interval from another side of the plurality of resonators and connected to the output electrode to transfer a signal resonated in the resonator to the output electrode.
10. The dielectric filter of claim 3, wherein a size of said first opening part can be controlled so as to control an incline of the notch at a stop band higher than a pass band.
11. The dielectric filter of claim 5, wherein a size of said third opening part can be controlled so as to control the incline of the notch at the stop band lower than the pass band.
12. The dielectric filter of claim 6, wherein said central pattern cuts off an electric field coupling between the resonator patterns positioned on both sides thereof, so that the resonator patterns positioned on one side of the central pattern are coupled by electric field with each other and the resonator patterns positioned on another side of the central pattern are coupled by magnetic field with each other.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for generating a video highlight from video data in a video system comprising a video segment detecting unit and a highlight generator, the method comprising:
dividing in the video segment detecting unit the video data into at least a first video segment and a second video segment, wherein a first image is associated with the first video segment and a second image is associated with the second video segment; and
generating the video highlight by selecting a plurality of images from at least one of the first video segment and the second video segment based on an amount of interval data, wherein the video highlight comprises the plurality of images and is generated based on a reference image determined according to the amount of interval data.
2. The method of claim 1, wherein the video data comprises video data recorded on a storage medium.
3. The method of claim 1, wherein the video data comprises streaming video.
4. The method of claim 1, wherein the video highlight is stored in a storage medium.
5. The method of claim 1, further comprising generating the second image in the second video segment after the first image in the first video segment.
6. The method of claim 1, wherein the video highlight is further generated from images in at least one of the first video segment and the second video segment selected based on importance.
7. The method of claim 1, wherein the video highlight is further generated from images in at least one of the first video segment and the second video segment that have a first level of importance.
8. The method of claim 1, wherein the video highlight excludes images in at least one of the first video segment and the second video segment that are not associated with a first level of importance.
9. The method of claim 1, wherein the at least the first video segment and the second video segment are divided based on scene change points in the video data.
10. The method of claim 1, wherein the plurality of images are selected based on a user input providing a preferred length for a duration of the video highlight comprising the plurality of images and the amount of interval data.
11. A system for generating a video highlight from video data, the system comprising:
a segment detector for dividing the video data into at least a first video segment and a second video segment prior to generating the video highlight, wherein a first image is associated with the first video segment and a second image is associated with the second video segment; and
a highlight generator for generating the video highlight by selecting a plurality of images from at least one of the first video segment and the second video segment based on an amount of interval data, wherein the video highlight comprises the plurality of images and is generated based on a reference image determined according to the amount of interval data.
12. The system of claim 11, wherein the video data comprises video data recorded on a storage medium.
13. The system of claim 11, wherein the video data comprises streaming video.
14. The system of claim 11, wherein the video highlight is stored in a storage medium.
15. The system of claim 11, further comprising generating the second image in the second video segment after the first image in the first video segment.
16. The system of claim 11, wherein the video highlight is further generated from images in at least one of the first video segment and the second video segment selected based on importance.
17. The system of claim 11, wherein the video highlight is further generated from images in at least one of the first video segment and the second video segment that have a first level of importance.
18. The system of claim 11, wherein the video highlight excludes images in at least one of the first video segment and the second video segment that are not associated with a first level of importance.
19. The system of claim 11, wherein the at least the first video segment and the second video segment are divided based on scene change points in the video data.
20. The system of claim 11, wherein the plurality of images are selected based on a user input providing a preferred length for a duration of the video highlight.
21. The method of claim 1, further comprising estimating the amount of interval data for each of the at least first and second video segments, wherein the reference image is determined according to the first or second video segment having a greater amount of interval data.
22. The method of claim 1, further comprising estimating the amount of interval data for each of the at least first and second video segments,
wherein the video highlight is further generated based on at least the first or second video segments selected according to a degree of importance determined using the estimated amount of interval data.
23. The method of claim 1, wherein the amount of interval data is determined by an average value of amounts of information of all images in an interval of the at least first or second video segment.
24. The system of claim 11, wherein the amount of interval data is determined by an average value of amounts of information of all images in an interval of the at least first or second video segment.
25. The system of claim 11, wherein the video highlight is generated using \u2018n\u2019 previous images and \u2018n\u2019 subsequent images of the plurality of images with respect to the reference image.
26. The method of claim 1, wherein the reference image is positioned at a center of the video highlight.
27. The method of claim 1, wherein the reference image comprises a largest amount of information among the plurality of images.
28. The system of claim 11, wherein the reference image is one of the plurality of images.

1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a trench partially through the substrate;
forming a vertical drift region along a sidewall of the trench;
depositing an insulating material within the trench;
forming a channel region along the sidewall of the trench above the insulating material;
forming a gate structure within the trench self-aligned to the channel region; and
forming a source region in a first surface of the substrate contacting the channel region.
2. The method of claim 1, wherein providing the substrate includes:
forming a drain region in the substrate as a second surface of the substrate opposite the first surface of the substrate; and
forming an epitaxial region in the substrate over the drain region.
3. The method of claim 2, further including, wherein forming the vertical drift region includes forming a plurality of doped regions between the source region and drain region.
4. The method of claim 2, further including:
forming an insulating layer over the first surface of the substrate;
forming a first conductive layer over the insulating layer electrically connected to the source region; and
forming a second conductive layer over the second surface of the substrate electrically connected to the drain region.
5. The method of claim 1, wherein forming the gate structure includes:
forming an insulating layer along the sidewall of the trench adjacent to the channel region; and
forming a polysilicon layer within the trench over the insulating layer.
6. The method of claim 1, wherein the channel region is separated from the insulating material.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a trench in the substrate;
forming a vertical drift region along a sidewall of the trench;
depositing an insulating material within the trench;
forming a channel region along the sidewall of the trench;
forming a gate structure within the trench over the insulating material and adjacent to the channel region; and
forming a source region in a first surface of the substrate.
8. The method of claim 7, wherein providing the substrate includes:
forming a drain region in the substrate as a second surface of the substrate opposite the first surface of the substrate; and
forming an epitaxial region in the substrate over the drain region.
9. The method of claim 8, further including:
forming an insulating layer over the first surface of the substrate;
forming a first conductive layer over the insulating layer electrically connected to the source region; and
forming a second conductive layer over the second surface of the substrate electrically connected to the drain region.
10. The method of claim 7, wherein forming the gate structure includes:
forming an insulating layer along the sidewall of the trench adjacent to the channel region; and
forming a polysilicon layer within the trench over the insulating layer.
11. The method of claim 7, wherein the channel region is separated from the insulating material.
12. The method of claim 7, further including forming an ohmic contact region overlapping the source region and epitaxial region.
13. The method of claim 7, further including:
forming an insulating layer over the first surface of the substrate;
forming a first conductive layer through the insulating layer electrically connected to the source region; and
forming a second conductive layer through the insulating layer electrically connected to the gate structure.
14. A method of making a semiconductor device, comprising:
providing a substrate;
forming a trench in the substrate;
forming a vertical drift region along a sidewall of the trench;
forming a channel region along the sidewall of the trench;
forming a gate structure within the trench adjacent to the channel region; and
forming a source region in a first surface of the substrate.
15. The method of claim 14, further including depositing an insulating material within the trench prior to forming the gate structure.
16. The method of claim 15, wherein the channel region is separated from the insulating material.
17. The method of claim 14, wherein providing the substrate includes:
forming a drain region in the substrate as a second surface of the substrate opposite the first surface of the substrate; and
forming an epitaxial region in the substrate over the drain region.
18. The method of claim 17, further including:
forming an insulating layer over the first surface of the substrate;
forming a first conductive layer over the insulating layer electrically connected to the source region; and
forming a second conductive layer over the second surface of the substrate electrically connected to the drain region.
19. The method of claim 14, further including forming the vertical drift region with an angled implant into a sidewall of the trench.
20. A semiconductor device, comprising:
a substrate;
a trench formed in the substrate;
a vertical drift region formed along a sidewall of the trench;
a channel region formed along the sidewall of the trench;
a gate structure formed within the trench adjacent to the channel region; and
a source region formed in a first surface of the substrate.
21. The semiconductor device of claim 20, further including an insulating material deposited within the trench.
22. The semiconductor device of claim 21, wherein the channel region is separated from the insulating material.
23. The semiconductor device of claim 20, wherein the substrate includes:
a drain region formed in the substrate as a second surface of the substrate opposite the first surface of the substrate; and
an epitaxial region formed in the substrate over the drain region.
24. The semiconductor device of claim 20, further including:
an insulating layer formed over the first surface of the substrate;
a first conductive layer formed over the insulating layer electrically connected to the source region; and
a second conductive layer formed over the second surface of the substrate electrically connected to the drain region.
25. The semiconductor device of claim 20, wherein the gate structure includes:
an insulating layer formed along the sidewall of the trench adjacent to the channel region; and
a polysilicon layer formed within the trench over the insulating layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1-7. (canceled)
8. A device for monitoring a conveyor belt, the device comprising:
the conveyor belt having an object to be detected;
a shaft having a flat surface facing the conveyor belt;
a guide roller rotatively supported around the shaft via a bearing to form a space within the guide roller; and
a sensor on the flat surface of the shaft to face the conveyor belt to detect variation of the object of the conveyor belt.
9. The device of claim 8, further comprising a cable from the sensor, a cavity being formed at an axial end of the shaft, a through hole being formed through a circumference of the shaft, the cable passing through the through hole and the cavity and being pulled out of the axial end of the shaft.
10. The device of claim 8 wherein a plurality of shafts and a plurality of guide rollers are provided, the sensor being provided on at least one of the plurality of shafts.
11. The device of claim 8 wherein a plurality of shafts and a plurality of guide rollers are provided along width of the conveyor belt, the sensor being provided on the shaft in the space of the guide roller.
12. The device of claim 8 wherein the guide roller always contacts the conveyor belt.
13. The device of claim 8 wherein the object of the conveyor belt comprises a magnet, while the sensor comprises a magnetic sensor detecting magnetic strength from the object.
14. The device of claim 8 further comprising a closure and a bracket, the closure horizontally engaging with the shaft at an end and having a noncircular cross section, the closure fitting in a noncircular axial hole of the bracket to allow the sensor on the shaft to always face a surface of the conveyor belt on which materials are not conveyed.