Author: claimsbot

We claim:

1. A method for processing a telephone call from a wireless subscriber unit that is part of a wireless telephone system, comprising:
(a) receiving a request to make said telephone call to a receiving subscriber unit;
(b) devocoding vocoded data from said wireless subscriber unit if said receiving subscriber unit is a wire-based subscriber unit; and
(c) delivering said vocoded data to said receiving subscriber unit if said receiving subscriber unit is a wireless subscriber unit.
2. The method as set forth in claim 1 wherein said delivering includes:
(c.1) routing said vocoded data to said receiving subscriber unit within said wireless telephone system if said receiving subscriber unit is part of said wireless telephone system; and
(c.2) routing said vocoded data through a long distance telecommunications system if said receiving subscriber unit is part of a second wireless telephone system.
3. The method as set forth in claim 2 wherein said routing said vocoded data through a long distance telecommunications system includes:
establishing an all-digital link to said second wireless telephone system; and
delivering said vocoded data to said second wireless system over said all-digital link.
4. The method as set forth in claim 3 wherein said all-digital link is an ATM network.
5. The method as set forth in claim 3 wherein said all-digital link passes through a local public switched telephone network and a long distance telecommunications system.
6. The method as set forth in claim 1 further comprising:
receiving a conference call request from said wireless subscriber unit directed to a third subscriber unit;
converting said vocoded data from said wireless subscriber unit into combinable data;
generating combined data by combining said combinable data and data from said third subscriber unit; and
generating combined vocoded data by vocoding said combined data and transmitting said combined vocoded data to said receiving subscriber unit.
7. The method as set forth in claim 6 wherein said combinable data is pulse code modulated data.
8. The method as set forth in claim 1 further comprising:
detecting an incoming call to said wireless subscriber unit from a third subscriber unit;
allocating signal processing resources to place data from said third subscriber unit into vocoded format if said third subscriber unit is part of another telephone system; and
transmitting said data from said third subscriber unit to said wireless subscriber unit when call waiting is activated.
9. A cellular telephone system for processing a telephone call from a requesting subscriber unit that is part of a wireless telephone system directed to a receiving subscriber unit comprising:
signal routing circuitry;
signal processing circuitry for processing vocoded data; and
a call control processor, coupled to said signal processing circuitry and said signal routing circuitry, for configuring said signal routing circuitry to bypass said signal processing circuitry if said receiving subscriber unit is part of said cellular telephone system, and for configuring said signal processing circuitry to devocode said vocoded data if said receiving subscriber unit is wire-based.
10. The cellular telephone system as set forth in claim 9 wherein said call control processor requests an all-digital connection to said receiving subscriber unit if said receiving subscriber unit is part of a second wireless telephone system, and configures said signal routing circuitry to deliver said vocoded data to said receiving subscriber unit through said all-digital connection.
11. The cellular telephone system as set forth in claim 10 wherein said all-digital connection passes through a local public switched telephone network and a long distance telecommunications system.
12. The cellular telephone system as set forth in claim 10 wherein said all-digital connection is an asynchronous transfer mode network.
13. The cellular telephone system as set forth in claim 9 wherein said signal routing circuitry further comprises an interconnect subsystem.
14. The cellular telephone system as set forth in claim 9 wherein said call control processor configures said signal processing circuitry to convert said vocoded data into tones if said receiving subscriber unit is part of a second wireless telephone system, and configures said signal routing circuitry to deliver said tones to a long distance telecommunications carrier.
15. The cellular telephone system as set forth in claim 9 wherein:
said call control processor receives a conference call request from said wireless subscriber unit directed to a third subscriber unit, and configures said signal processing circuitry to convert said vocoded data from said wireless subscriber unit into combinable data, to generate combined data by combining said combinable data and data from said third subscriber unit, and to generate combined vocoded data by vocoding said combined data and transmitting said combined vocoded data to said receiving subscriber unit.
16. The cellular telephone systems as set forth in claim 15 wherein said combinable data is pulse code modulated data.
17. The cellular telephone system as set forth in claim 9 wherein:
said call control processor detects an incoming call to said wireless subscriber unit from a third subscriber unit and configures said signal processing resources to place data from said third subscriber unit into vocoded format if said third subscriber unit is part of another telephone system if call waiting is activated.
18. A wireless telephone system for processing a telephone call from a requesting subscriber unit that is part of a wireless telephone system directed to a receiving subscriber unit comprising:
means for routing digital information;
means for processing vocoded data; and
means for configuring said means for routing to bypass said means for processing if said receiving subscriber unit is part of said wireless telephone system, and for configuring said means for processing to devocode said vocoded data if said receiving subscriber unit is wire based, said means for configuring being coupled to said means for processing and said means for routing.
19. The wireless telephone system of claims 18 wherein said means for configuring configures said means for routing to route said vocoded data to said receiving subscriber unit within said wireless telephone system if said receiving subscriber unit is part of said wireless subscriber system, and to route said vocoded data through a long distance telecommunication service if said receiving subscriber unit is part of a second wireless telephone system.
20. The wireless telephone system as set forth in claim 19 wherein said means for routing comprises an interconnect subsystem;
21. The wireless telephone system as set forth in claim 20 wherein said means for configuring configures said means for processing to convert said vocoded data into tones, and configures said means for routing to deliver said signal to a long distance telecommunications carrier, if said receiving subscriber unit is part of a second wireless telephone system.
22. The wireless telephone system as set forth in claim 21 wherein said means for configuring requests an all-digital connection to said receiving subscriber unit if said receiving subscriber unit is part of a second wireless telephone system, and configures said means for routing to deliver said vocoded data to said receiving subscriber unit through said all-digital connection if said al digital connection is supplied.
23. The wireless telephone system as set forth in claim 22 wherein said all-digital connection passes through a local public switched telephone network and a long distance telecommunications system.
24. The wireless telephone system as set forth in claim 23 wherein said all-digital connection is an asynchronous transfer mode network.
25. The wireless telephone system as set forth in claim 18 wherein:
said means for controlling receives a conference call request from said wireless subscriber unit directed to a third subscriber unit, and configures said means for processing to convert said vocoded data from said wireless subscriber unit into combinable data, to generate combined data by combining said combinable data and data from said third subscriber unit, and to generate combined vocoded data by vocoding said combined data and transmitting said combined vocoded data to said receiving subscriber unit.
26. The wireless telephone systems as set forth in claim 25 wherein said combinable data is pulse code modulated data.
27. The wireless telephone system as set forth in claim 18 wherein:
said means for configuring detects an incoming call to said wireless subscriber unit from a third subscriber unit and configures said means for processing to place data from said third subscriber unit into vocoded format if said third subscriber unit is part of another telephone system.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of determining bioequivalence between a reference brand-name drug and a generic drug product for administering to a subject, the method comprising:
a. determining pharmacokinetic parameters of the reference brand-name drug and the generic drug product
b. determining toxicity associated with administration of the reference brand-name drug and the generic drug product
c. comparing the pharmacokinetic parameters and the toxicity profiles of the reference brand-name drug and the generic drug product
wherein equivalent pharmacokinetic parameters combined with equivalent toxicity profiles of the reference brand-name drug and the generic drug product indicate bioequivalence of the reference brand-name drug and the generic drug product when administered to the subject.
2. The method of claim 1, wherein the generic drug is a pegylated liposomal doxorubicin (PLD).
3. The method of claim 1, wherein the reference brand-name drug is Doxorubicin HCl Liposome Injection (Doxil).
4. The method of claim 1, wherein the toxicity is skin toxicity.
5. The method of claim 1, wherein the toxicity is palmar plantar erythrodysesthesia (PPE).
6. The method of claim 1, wherein the toxicity profile is PPE severity grade, dose reduction or delays caused by PPE.
7. The method of claim 5 or 6, wherein PPE serves as an in-vivo bioassay indicative of tissue bioavailability of the generic drug product and the reference brand-name drug.
8. The method of claim 1, wherein the pharmacokinetic parameter is selected from the group consisting of absorption rate constant, bioavailability, apparent volume of distribution, steady-state volume of distribution, unbound fraction, rate of elimination, clearance, renal clearance, metabolic clearance, fraction excreted unchanged, elimination rate constant, biologic half-life, maximum concentration, and area under the concentration vs. time curve (AUC).
9. The method of claim 1, wherein levels of total doxorubicin and its metabolite, doxorubicinol in plasma and urine are measured.
10. A method of claim 9, wherein the levels of liposome-associated and free doxorubicin in plasma are measured.
11. A method of claim 10, wherein the proportion of liposome associated to free doxorubicin in plasma is an indication of bioavailability of doxorubicin in plasma.
12. A method of claim 11, wherein a high proportion of liposome-associated doxorubicin is an indication of lack of bioavailability in plasma.
13. The method of claim 1, wherein the pharmacokinetic parameter is a delay in the appearance of doxorubicinol in plasma.
14. A method of claim 13, wherein equivalent delay in the appearance of doxorubicinol in plasma of the drug product relative to the reference brand-name drug combined with equivalent AUC of doxorubicinol in plasma of the drug product relative to the reference brand-name drug indicate equivalent tissue bioavailability of the generic drug product relative to the reference brand-name drug.
15. A method of claims 8 and 14, wherein equivalent PK parameters and tissue bioavailability of the drug product relative to the reference brand-name drug indicate bioequivalence between the drug product and the reference brand-name drug.
16. The method of claim 1, wherein the bioequivalence is met if the 90% confidence interval (CI) of the mean Cmax, AUC(0-t) and AUC(0-\u221e) of the generic drug product relative to the reference brand-name drug is within 80% to 125%.
17. The method of claim 1, wherein the bioequivalence determined meets the requirements set by the FDA.
18. The method of claim 1, wherein the subject is a mammal.
19. The method of claim 1, wherein the subject is a human.
20. The method of claim 1, wherein the method is used to identify a generic drug product having an effective bioequivalence to the reference brand-name drug for administering to a subject.
21. The method of claim 1, wherein the method is used to identify generic PLD products having an effective bioequivalence to doxorubicin hydrochloric acid liposome injection (Doxil) for administering to a subject.
22. A method of assessing bioequivalence between a generic pegylated liposomal doxorubicin (PLD) product and a reference doxorubicin hydrochloric acid liposome injection (Doxil) for administering to a subject, the method comprising:
a. determining pharmacokinetic parameters of doxorubicin hydrochloric acid liposome injection (Doxil) and the generic PLD product
b. determining toxicity associated with administration of doxorubicin hydrochloric acid liposome injection (Doxil) and the generic PLD product
c. comparing the pharmacokinetic parameters and the toxicity profiles of doxorubicin hydrochloric acid liposome injection (Doxil) and the generic PLD product
wherein equivalent pharmacokinetic parameters plus equivalent toxicity profiles of Doxil and the generic PLD product indicate bioequivalence of Doxil and the generic PLD product when administered to the subject.
23. The method of claim 22, wherein the toxicity is skin toxicity.
24. The method of claim 22, wherein the toxicity is palmar plantar erythrodysesthesia (PPE).
25. The method of claim 22, wherein the toxicity profile is PPE toxicity grade or dose modifications.
26. The method of claim 24 or 25, wherein PPE is indicative of tissue bioavailability of the generic PLD product and Doxil.
27. The method of claim 22, wherein the pharmacokinetic parameter is selected from the group consisting of absorption rate constant, bioavailability, apparent volume of distribution, steady-state volume of distribution, unbound fraction, rate of elimination, clearance, renal clearance, metabolic clearance, fraction excreted unchanged, elimination rate constant, biologic half-life, maximum concentration, and Area under Curve.
28. The method of claim 22, wherein levels of doxorubicin and its metabolite, doxorubicinol in plasma and urine are measured.
29. The method of claim 22, wherein the pharmacokinetic parameter is a delay in the appearance of doxorubicinol in plasma.
30. The method of claim 22, wherein the bioequivalence is met if the 90% confidence interval (CI) of the mean Cmax, AUC(0-t) and AUC(0-\u221e) of the generic drug product relative to the reference brand-name drug is within 80% to 125%.
31. The method of claim 22, wherein the bioequivalence determined meets the requirements set by the FDA.
32. The method of claim 22, wherein the subject is a mammal.
33. The method of claim 22, wherein the subject is a human.
34. The method of claim 22, wherein the method is used to identify generic PLD products having an effective bioequivalence to doxorubicin hydrochloric acid liposome injection (Doxil) for administering to a subject.
35. A kit for determining bioequivalence between doxorubicin hydrochloric acid liposome injection (Doxil) and a generic PLD product, the kit comprising:
a. a generic PLD product
b. reagents for performing in vitro and in vivo pharmacokinetic assays
c. instructions for using the kit
36. The kit of claim 35 further comprising more than one generic PLD product.
37. The kit of claim 35 further comprising an instrument for performing in vivo pharmacokinetic study.
38. The kit of claim 35 further comprising a computer readable program or software for performing pharmacokinetic andor statistical analysis.
39. A method of determining bioequivalence between an FDA-approved reference drug product and a pharmaceutically equivalent product that is produced using a manufacturing change relative to the reference product, the method comprising:
a. determining pharmacokinetic parameters of the reference drug and the pharmaceutically equivalent product
b. determining toxicity associated with administration of the reference drug and the pharmaceutically equivalent product
c. comparing the pharmacokinetic parameters and the toxicity profiles of the reference drug and the pharmaceutically equivalent product
wherein equivalent pharmacokinetic parameters combined with equivalent toxicity profiles of the reference drug and a pharmaceutically equivalent product indicate bioequivalence of the reference drug with the pharmaceutically equivalent product made with a manufacturing change.
40. The method of claim 39, wherein the manufacturing change is a new manufacturing site andor equipment.
41. The method of claim 39, wherein the manufacturing change is an alternative process or process step.
42. The method of claim 39, wherein the manufacturing change is a new source of raw materials.
43. The method of claim 39, wherein the pharmaceutically equivalent drug is a pegylated liposomal doxorubicin (PLD).
44. The method of claim 39, wherein the reference drug is Doxorubicin HCl Liposome Injection (Doxil).
45. The method of claim 39, wherein the toxicity is skin toxicity.
46. The method of claim 39, wherein the toxicity is palmar plantar erythrodysesthesia (PPE).
47. The method of claim 39, wherein the toxicity profile is PPE toxicity grade or dose modifications.
48. The method of claim 46 or 47, wherein PPE is indicative of tissue bioavailability of the pharmaceutically equivalent product and the reference drug.
49. The method of claim 39, wherein the pharmacokinetic parameter is selected from the group consisting of absorption rate constant, bioavailability, apparent volume of distribution, steady-state volume of distribution, unbound fraction, rate of elimination, clearance, renal clearance, metabolic clearance, fraction excreted unchanged, elimination rate constant, biologic half-life, maximum concentration, and area under the concentration vs. time curve (AUC).
50. The method of claim 39, wherein levels of doxorubicin and its metabolite, doxorubicinol in plasma and urine are measured.
51. The method of claim 39, wherein the pharmacokinetic parameter is a delay in the appearance of doxorubicinol in plasma.
52. The method of claim 39, wherein the bioequivalence is met if 90% confidence interval (CI) of the mean Cmax, AUC(0-t) and AUC(0-\u221e) of the pharmaceutically equivalent drug product relative to the reference drug is within 80% to 125%.
53. The method of claim 39, wherein the bioequivalence determined meets the requirements set by the FDA.

1. An Ni-based superalloy component having a three-layer configuration of an Ni-based superalloy substrate, a bond coat layer and a heat-resistant ceramic top coat layer having a thermal barrier function, wherein the alloy material of the bond coat layer has a composition including Co of at most 15.0% by mass, Cr of from 0.1% by mass to 7.5% by mass, Mo of at most 3.0% by mass, W of from 4.1% by mass to 10.0% by mass, Al of from 6.0% by mass to 10.0% by mass, Ti of at most 2.0% by mass, Ta of from 5.0% by mass to 15.0% by mass, Hf of at most 1.5% by mass, Y of at most 1.0% by mass, Nb of at most 2.0% by mass and Si of at most 2.0% by mass with a balance of Ni and inevitable impurities, and the Ni-based superalloy substrate has a composition including Al of from 1.0% by mass to 10.0% by mass, Ta of from 0% by mass to 14.0% by mass, Mo of from 0% by mass to 10.0% by mass, W of from 0% by mass to 15.0% by mass, Re of from 0% by mass to 10.0% by mass, Hf of from 0% by mass to 3.0% by mass, Cr of from 0% by mass to 20.0% by mass, Co of from 0% by mass to 20% by mass, Ru of from 0% by mass to 14.0% by mass, Nb of from 0% by mass to 4.0% by mass, Ti of from 0% by mass to 4.0% by mass and Si of from 0% by mass to 2.0% by mass with a balance of Ni and inevitable impurities.
2. An Ni-based superalloy component having a three-layer configuration of an Ni-based superalloy substrate, a bond coat layer and a heat-resistant ceramic top coat layer having a thermal barrier function, wherein the alloy material of the bond coat layer has a composition including Co of at most 12.0% by mass, Cr of from 0.1% by mass to 6.0% by mass, Mo of at most 3.0% by mass, W of from 4.1% by mass to 9.0% by mass, Al of from 6.5% by mass to 9.5% by mass, Ti of at most 2.0% by mass, Ta of from 5.0% by mass to 15.0% by mass, Hf of at most 1.5% by mass, Y of from 0.01% by mass to 1.0% by mass, Nb of at most 2.0% by mass and Si of at most 2.0% by mass with a balance of Ni and inevitable impurities, and the Ni-based superalloy substrate has a composition including Al of from 3.5% by mass to 7.0% by mass, Ta of 2.0% by mass to 12.0% by mass, Mo of from 0% by mass to 4.5% by mass, W of from 0% by mass to 10.0% by mass, Re of from 0% by mass to 10.0% by mass, Hf of from 0% by mass to 0.50% by mass, Cr of from 1.0% by mass to 15.0% by mass, Co of from 0% by mass to 16% by mass, Ru of from 0% by mass to 14.0% by mass, Nb of from 0% by mass to 2.0% by mass, Ti of from 0% by mass to 3.0% by mass and Si of from 0% by mass to 2.0% by mass with a balance of Ni and inevitable impurities.
3. The Ni-based superalloy component according to claim 1, wherein the bond coat layer is formed according to a low-pressure plasma spraying method or a high-velocity oxygen fuel spraying method.
4. The Ni-based superalloy component according to claim 2, wherein the bond coat layer is formed according to a low-pressure plasma spraying method or a high-velocity oxygen fuel spraying method.
5. The Ni-based superalloy component according to claim 1, wherein the top layer includes a Zr oxide or a Hf oxide to which an oxide of a rare earth metal such as Y, La, Ga, Sm or the like or an Mg oxide is added.
6. The Ni-based superalloy component according to claim 2, wherein the top layer includes a Zr oxide or a Hf oxide to which an oxide of a rare earth metal such as Y, La, Ga, Sm or the like or an Mg oxide is added.
7. The Ni-based superalloy component according to claim 1, wherein the pore area of the bond coat layer is at most 5 \u03bcm2 per 1000 \u03bcm2.
8. The Ni-based superalloy component according to claim 2, wherein the bond coat layer is formed according to a low-pressure plasma spraying method, and the pore area of the bond coat layer is at most 3 \u03bcm2 per 1000 \u03bcm2.
9. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 1.
10. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 2.
11. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 3.
12. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 4.
13. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 5.
14. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 6.
15. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 7.
16. A heat-resistant gas turbine component that includes the Ni-based superalloy component of claim 8.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A sub-circuit power supply circuit comprising:
a first voltage rail that is adapted to provide a first voltage;
a second voltage rail that is adapted to provide a second voltage;
a third voltage rail that is adapted to provide a third voltage;
a fourth voltage rail that is adapted to provide a fourth voltage;
a first supply voltage output;
a second supply voltage output;
a footer circuit that is coupled to the third voltage rail, the fourth voltage rail, and the second supply voltage output; and
a header circuit having:
a transistor having a source, a drain, a gate, and body, wherein the source of the transistor is coupled to the first voltage rail, and wherein the drain of the transistor is coupled to the first supply voltage output, and wherein the gate of the transistor responsive to an activation signal so as to couple the first voltage rail to the first supply voltage output; and
a connection unit that is coupled to the second voltage rail, the body of the transistor and the first supply voltage output, wherein the connection unit is responsive to the activation signal to couple the body of the transistor to the first supply voltage output so as to bias the body of the transistor to lower a threshold voltage of the transistor when the transistor is turned on, and to couple the body of the transistor to the second voltage rail to bias the body of the transistor to raise the threshold voltage when the transistor is turned off.
2. The circuit of claim 1, wherein the circuit further comprises a state-maintaining voltage circuit that is coupled between the first voltage rail and the first supply voltage output, wherein the state-maintaining voltage circuit is configured to provide a fifth voltage, which is different from the first voltage, to the first supply voltage output when the transistor is turned off.
3. The circuit of claim 1, wherein the transistor further comprises a first transistor, and wherein the activation signal further comprises a first activation signal, and wherein the footer circuit further comprises:
a second transistor having a source, a drain, a gate, and a body, wherein the source of the second transistor is coupled to the third voltage rail, and wherein the drain of the second transistor is coupled to the second supply voltage output, and wherein the gate of the second transistor is responsive to a second activation signal so as couple the third voltage rail to the second supply voltage output; and
a second connection unit that is coupled to the second voltage source, the body of the second transistor and the second supply voltage output, wherein the second connection unit is responsive to the second activation signal to couple the body of the second transistor to the second supply voltage output so as to bias the body of the second transistor to lower a threshold voltage of the second transistor when the second transistor is turned on, and to couple the body of the second transistor to the fourth voltage rail to bias the body of the second transistor to raise the threshold voltage of the second transistor when the second transistor is turned off.
4. The circuit of claim 3, wherein the header circuit further comprises: a first state-maintaining voltage circuit that is coupled between the first voltage rail and the first supply voltage, wherein the first state-maintaining voltage circuit is configured to provide a fifth voltage, which is different from the first voltage, to the first supply voltage output when the transistor is turned off, and wherein the footer circuit further comprises a second state-maintaining voltage circuit that is coupled between the third voltage rail and the second supply voltage output, wherein the second state-maintaining voltage circuit is configured to provide a sixth voltage, which is different from the third voltage, to the second supply voltage output when the second transistor is turned off.
5. The circuit of claim 4, wherein the header and footer circuits further comprise first and second control units that respectively provide the first activation signal and the second activation signal.
6. The circuit of claim 5, wherein the first activation signal and the second activation signal are the same or complementary signals.
7. The circuit of claim 1, wherein the connection unit further comprises:
a first body region switch that is coupled between the body of the transistor and the second voltage rail, wherein the first body region switch is responsive to the activation signal so as to couple the body of the transistor to the second voltage source to bias the body of the transistor to raise the threshold voltage of the transistor when the transistor is turned off; and
a second body region switch that is coupled between the body of the transistor and the first supply voltage output, wherein the second body region switch is responsive to the activation signal so as to couple the body of the transistor to the supply voltage output to bias the body of the transistor to lower the threshold voltage of the transistor when the first transistor is turned on.
8. The circuit of claim 7, wherein the transistor is a first p-channel MOSFET (PMOS) transistor, and wherein the first body region switch comprises a second PMOS transistor having a source and a drain coupled to the body of the transistor and the second voltage source, respectively, and having a gate coupled to receive the activation signal or its complement, and wherein the second body region switch comprises a third p-channel MOSFET transistor having a source and a drain coupled to the body of the transistor and the supply voltage output, respectively, and having a gate coupled to receive the complement of the signal applied to the gate of the second p-channel MOSFET transistor.
9. The circuit of claim 8, wherein the first voltage rail is a header power supply bus, and wherein the second voltage rail is a header inputoutput (IO) supply bus, and wherein the second voltage is greater than the first voltage.
10. A sub-circuit power supply comprising:
a header supply bus that provides a header supply bus voltage;
a header IO supply bus that provides a header IO supply bus voltage, wherein the header IO supply bus voltage is greater than the header supply bus voltage;
a header virtual supply voltage output;
a first footer supply bus that provides a first footer supply bus voltage;
a second footer supply bus that provides a second footer supply bus voltage;
a footer virtual supply voltage output;
a header circuit including:
a first PMOS transistor that is coupled to the header supply bus at its source, and the header virtual supply voltage output at its drain, and that receives a header activation signal at its gate, wherein the first PMOS transistor couples the header supply bus to the header virtual supply voltage output when the first PMOS transistor is on;
a second PMOS transistor that is coupled between the body of the first PMOS transistor and the header IO supply bus and that receives the header activation signal at its gate, wherein the second PMOS transistor couples the header IO supply bus to bias the body of the first PMOS transistor to raise a threshold voltage of the first PMOS transistor when the first PMOS transistor is off; and
a third PMOS transistor that is coupled between the body of the first PMOS transistor and the header virtual supply voltage output and that receives the header activation signal at its gate, wherein the third PMOS transistor couples the body of the first PMOS transistor to the header virtual supply voltage output to bias the body of the first PMOS transistor to lower the threshold voltage of the first PMOS transistor when the first PMOS transistor is on.
11. The circuit of claim 10, wherein the header circuit further comprises a state-maintaining header voltage circuit that is coupled between the header supply bus and the header virtual supply voltage output.
12. The circuit of claim 10, wherein the footer circuit further comprises:
a first n-channel MOSFET (NMOS) transistor that is coupled to the first footer supply bus at its source, and the footer virtual supply voltage output at its, and that receives a footer activation signal at its gate, wherein the first NMOS transistor couples the first footer supply bus to the footer virtual supply voltage output when the first NMOS transistor is on;
a second NMOS transistor that is coupled between the body of the first NMOS transistor and the second footer supply bus and that receives the footer activation signal, wherein the second NMOS transistor couples the first footer supply bus to bias the body of the first NMOS transistor to raise a threshold voltage of the first NMOS transistor when the first NMOS transistor is off; and
a third NMOS transistor that is coupled between the body of the second NMOS transistor and the footer virtual supply voltage output and that receives the footer activation signal at its gate, wherein couples the body of the first NMOS transistor to the footer virtual supply voltage output to bias the body of the first NMOS transistor to lower the threshold voltage of the first NMOS transistor when the first NMOS transistor is on.
13. The circuit of claim 12, wherein the header circuit further comprises a state-maintaining header voltage circuit that is coupled between the header supply bus and the header virtual supply voltage output, and wherein the footer circuit further comprises a state-maintaining footer voltage circuit that is coupled between the first footer supply bus and the footer virtual supply voltage output.
14. A sub-circuit power supply including a footer circuit comprising:
a substrate voltage supply source;
an alternate voltage supply source;
a footer virtual supply voltage output;
an n-channel MOSFET footer transistor having a source coupled to the substrate voltage supply source, a drain coupled to the footer virtual supply voltage output, a gate, and a body region; the footer transistor having a threshold voltage, and being responsive to a footer activation signal applied to the gate to turn on the footer transistor and couple the substrate voltage supply source to the footer virtual supply voltage output;
a first n-channel MOSFET transistor switch coupled between the footer transistor body region and the alternate voltage supply source; the first n-channel MOSFET transistor switch being responsive to the footer activation signal to couple the substrate voltage supply source to bias the body region to raise the threshold voltage when the footer transistor is turned off; and
a second n-channel MOSFET transistor switch coupled between the footer transistor body region and the footer virtual supply voltage output; the second n-channel MOSFET transistor switch being responsive to the footer activation signal to couple the footer transistor body region to the footer virtual supply voltage output to bias the footer transistor body region to lower the threshold voltage when the footer transistor is turned on.
15. A method of providing power to a sub-circuit comprising:
applying an activation signal to a gate of a transistor, to turn on the transistor and couple a first voltage source to an output to supply voltage to the sub-circuit;
responsive to the activation signal, coupling a body region of the transistor to the output to bias the body region to lower a threshold voltage of the transistor when the transistor is turned on;
responsive to the activation signal, coupling the body region of the transistor to a second voltage source to bias the body region to raise the threshold voltage when the transistor is turned off;
applying a second activation signal to a gate of a second transistor, to turn on the second transistor and couple a third voltage source to a second output to supply voltage to the sub-circuit;
responsive to the second activation signal, coupling a body region of the second transistor to the second output to bias the second transistor body region to lower a threshold voltage of the second transistor when the second transistor is turned on; and
responsive to the second activation signal, coupling the body region of the second transistor to a fourth voltage source to bias the second transistor body region to raise the second transistor threshold voltage when the second transistor is turned off.
16. The method of claim 15, further comprising using a first state-maintaining voltage circuit coupled between the first voltage source and the supply voltage output to provide a voltage, different than voltage at the first voltage source, to the supply voltage output when the transistor is turned off; and using a second state-maintaining voltage circuit coupled between the third voltage source and the second supply voltage output to provide another voltage, different than voltage at the third voltage source, to the second supply voltage output when the second transistor is turned off.
17. The method of claim 16, further comprising providing the activation signal and the second activation signal, wherein the activation signal and the second activation signal are the same or complementary signals.
18. A method of providing power to a sub-circuit comprising:
applying a header activation signal to a gate of a p-channel MOSFET (PMOS) header transistor, to turn on the header transistor and couple a header supply bus to a header virtual supply voltage output;
responsive to the header activation signal, switching a first PMOS transistor switch to couple a body region of the header transistor to the header virtual supply voltage output to bias the body region to lower a threshold voltage of the header transistor when the header transistor is turned on;
responsive to the header activation signal, switching a second PMOS transistor switch to couple the body region of the header transistor to a header source of higher voltage than voltage of the header supply bus to bias the body region to raise the threshold voltage when the header transistor is turned off;
applying a footer activation signal to a gate of an n-channel MOSFET (NMOS) footer transistor, to turn on the footer transistor and couple a substrate voltage supply source to a footer virtual supply voltage output;
responsive to the footer activation signal, switching a first NMOS transistor switch to couple a body region of the footer transistor to the footer virtual supply voltage output to bias the footer transistor body region to lower a threshold voltage of the footer transistor when the footer transistor is turned on; and
responsive to the footer activation signal, switching a second NMOS transistor switch to couple the body region of the transistor to a an alternate voltage supply source to bias the body region to raise the threshold voltage when the footer transistor is turned off.