Author: claimsbot

What is claimed is:

1. A semiconductor memory device comprising:
a plurality of memory cell regions, each comprising at least one memory cell;
a non-volatile memory section which accepts external writing; and
unselecting means for designating at least one of the plurality of memory cell regions to be inaccessible based on data written to the non-volatile memory section,
wherein at least one operation type is performed for at least one accessible memory cell region, which is not designated to be inaccessible, among the plurality of memory cell regions.
2. A semiconductor memory device according to claim 1, further comprising address conversion means for assigning a consecutive sequence of external addresses to the at least one accessible memory cell region.
3. A semiconductor memory device according to claim 2, wherein, if an internal address which is generated by adding a predetermined value to an external address coincides with an existing internal address when assigning the consecutive sequence of external addresses to the at least one accessible memory cell region, one of the plurality of memory cell regions corresponding to the generated internal address is designated to be inaccessible.
4. A semiconductor memory device according to claim 1, wherein, based on the data written to the non-volatile memory section, the unselecting means designates at least one of the plurality of memory cell regions to be inaccessible to one operation type among the at least one operation type, and yet accessible to the other operation types among the at least one operation type.
5. A semiconductor memory device according to claim 1,
wherein the semiconductor memory device comprises a plurality of memory cell blocks capable of accepting a block erase operation, and
wherein, when designating at least one of the plurality of memory cell regions to be inaccessible based on the data written to the non-volatile memory section, the unselecting means designates at least one of the plurality of memory cell blocks to be inaccessible.
6. A semiconductor memory device according to claim 5, wherein the plurality of memory cell blocks includes at least one memory cell block having a different capacity.
7. A semiconductor memory device according to claim 5,
wherein the semiconductor memory device comprises a plurality of banks, each comprising the plurality of memory cell blocks, such that the plurality of memory cell blocks are capable of dual work operation, and
wherein, when designating at least one of the plurality of memory cell regions to be inaccessible based on the data written to the non-volatile memory section, the unselecting means designates at least one of the plurality of banks to be inaccessible.
8. A semiconductor memory device according to claim 7, wherein at least one of the plurality of banks includes at least one memory cell block having a different capacity.
9. A semiconductor memory device according to claim 6, wherein the address conversion means is capable of changing an address position of the at least one memory cell block having the different capacity.
10. A semiconductor memory device according to claim 1, wherein the non-volatile memory section is provided in a portion of a non-volatile memory cell which is capable of programming at once.
11. A method for restoring the semiconductor memory device according to claim 1 when the semiconductor memory device includes a defective memory cell, comprising the steps of:
storing an address of the defective memory cell in the non-volatile memory section; and
designating, by means of the unselecting means, one of the plurality of memory cell regions that includes the defective memory cell to be inaccessible, based on the data written to the non-volatile memory section.
12. A method according to claim 11, further comprising the step of:
designating, by means of the unselecting means, one of the plurality of memory cell regions that includes the defective memory cell to be inaccessible only to an operation type which causes an error, based on the data written to the non-volatile memory section.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An electric operation apparatus comprising:
a high-frequency generating device which generates high-frequency current for treating the body anatomy;
an active electrode which supplies to adapted to supply the body anatomy with the high-frequency current generated by the high-frequency generating device;
a solution supply device which supplies a conductive solution around the active electrode;
a return electrode which returns, via the conductive solution supplied by the solution supply device, the high-frequency current supplied to the body anatomy from the active electrode in the conductive solution;
a sensor which detects a conductive state of the high-frequency current that flows between the active electrode and the return electrode;
a control device which determines a state of bubbles generated around the active electrode and which changes an operation mode, based on the conductive state of the high-frequency current detected by the sensor, the control device has a first operation mode for starting the discharge operation using the active electrode and a second operation mode for changing the conductive state of the high-frequency current after the start of discharge operation in the first operation mode; and
an air supply device which supplies air near the active electrode arranged in the conductive solution, the control device controlling the air supply device and changing the operation mode.
2. An electric operation apparatus according to claim 1, wherein the control device operates the air supply device in the first operation mode, and stops the operation of the air supply device in the second operation mode.
3. An electric operation apparatus according to claim 1, wherein the control device operates the air supply device after outputting the high-frequency current to the active electrode only when no discharge operation starts in the active electrode, and stops the air supply device when the discharge operation starts in the active electrode.
4. An electric operation apparatus comprising:
a high-frequency generating device which generates high-frequency current for treating the body anatomy;
an active electrode which supplies to adapted to supply the body anatomy with the high-frequency current generated by the high-frequency generating device;
a solution supply device which supplies a conductive solution around the active electrode;
a return electrode which returns, via the conductive solution supplied by the solution supply device, the high-frequency current supplied to the body anatomy from the active electrode in the conductive solution;
a sensor which detects a conductive state of the high-frequency current that flows between the active electrode and the return electrode;
a control device which determines a state of bubbles generated around the active electrode and which changes an operation mode, based on the conductive state of the high-frequency current detected by the sensor, the control device has a first operation mode for starting the discharge operation using the active electrode and a second operation mode for changing the conductive state of the high-frequency current after the start of discharge operation in the first operation mode; and
a heating power supply device which generates power for heating the active electrode arranged in the conductive solution, the control device controls the heating power supply device, and changes the operation mode,
wherein the high-frequency current is outputted to the active electrode, nearly simultaneously, the heating power supply device outputs DC or AC current to heat the active electrode and, upon detecting the start of discharge operation in the active electrode, nearly simultaneously, the control device stops the DC or AC current outputted from the heating power supply device.
5. An electric operation apparatus according to claim 4, wherein an edge portion of the active electrode is spiral-shaped or saw-blade-shaped.
6. An electric operation apparatus comprising:
a high-frequency generating device which generates high-frequency current for treating the body anatomy;
an active electrode which supplies to adapted to supply the body anatomy with the high-frequency current generated by the high-frequency generating device;
a solution supply device which supplies a conductive solution around the active electrode;
a return electrode which returns, via the conductive solution supplied by the solution supply device, the high-frequency current supplied to the body anatomy from the active electrode in the conductive solution;
a sensor which detects a conductive state of the high-frequency current that flows between the active electrode and the return electrode;
a control device which determines a state of bubbles generated around the active electrode and which changes an operation mode, based on the conductive state of the high-frequency current detected by the sensor, the control device has a first operation mode for starting the discharge operation using the active electrode and a second operation mode for changing the conductive state of the high-frequency current after the start of discharge operation in the first operation mode; and
an evaporation detecting portion which detects vapor of the conductive solution so as to detect the state of the bubbles near the active electrode, the control device changes the operation mode based on a detection result of the evaporation detecting portion,
wherein the control device operates the high-frequency generating device so that the peak of the high-frequency power or a crest factor of the high-frequency current is increased before detecting the evaporation of the conductive solution in the first operation mode, and operates the high-frequency generating device so that the peak of the high-frequency power or the crest factor of the high-frequency current is decreased after detecting the evaporation of the conductive solution in the second operation mode.
7. An electric operation apparatus comprising:
a high-frequency generating device which generates high-frequency current for treating the body anatomy;
an active electrode which supplies to adapted to supply the body anatomy with the high-frequency current generated by the high-frequency generating device;
a solution supply device which supplies a conductive solution around the active electrode;
a return electrode which returns, via the conductive solution supplied by the solution supply device, the high-frequency current supplied to the body anatomy from the active electrode in the conductive solution;
a sensor which detects a conductive state of the high-frequency current that flows between the active electrode and the return electrode;
a control device which determines a state of bubbles generated around the active electrode and which changes an operation mode, based on the conductive state of the high-frequency current detected by the sensor, the control device has a first operation mode for starting the discharge operation using the active electrode and a second operation mode for changing the conductive state of the high-frequency current after the start of discharge operation in the first operation mode; and
a promotion holding portion which promotes the generation of bubbles near the active electrode or holds the bubbles, the control device controlling the promotion holding portion, and changing the operation mode; the promotion holding portion being a solution supply stop portion which temporarily stops the solution supply of the conductive solution through the solution supply device, and the control device operates the solution supply stop portion in the second operation mode.
8. An electric operation apparatus comprising:
a high-frequency generating device which generates high-frequency current for treating the body anatomy;
an active electrode which supplies to adapted to supply the body anatomy with the high-frequency current generated by the high-frequency generating device;
a solution supply device which supplies a conductive solution around the active electrode;
a return electrode which returns, via the conductive solution supplied by the solution supply device, the high-frequency current supplied to the body anatomy from the active electrode in the conductive solution;
a sensor which detects a conductive state of the high-frequency current that flows between the active electrode and the return electrode;
a control device which determines a state of bubbles generated around the active electrode and which changes an operation mode, based on the conductive state of the high-frequency current detected by the sensor, the control device has a first operation mode for starting the discharge operation using the active electrode and a second operation mode for changing the conductive state of the high-frequency current after the start of discharge operation in the first operation mode; and
a discharge promoting portion which promotes the discharge operation in the active electrode, the control device controlling the discharge promoting portion, and changing the operation mode, the discharge promoting portion being an air supply device which supplies air near the active electrode arranged in the conductive solution.

1-22. (canceled)
23. A golf ball comprising:
a center having a hardness of 19 to 25;
an outer core layer having a hardness of 30 to 38;
an inner cover layer formed from a material having a flexural modulus of at least about 65,000 psi; and
an outer cover layer formed from a thermoset material and having a thickness of less than 0.05 inches.
24. The golf ball of claim 23, wherein the outer cover has a thickness of less than about 0.02 inches to about 0.04 inches.
25. The golf ball of claim 23, wherein the thermoset material comprises polyurethane.
26. The golf ball of claim 23, wherein the inner cover layer is formed from a material having a flexural modulus of at least about 75,000 psi.
27. The golf ball of claim 23, wherein the inner cover layer is formed from an ionomer resin.
28. The golf ball of claim 23, wherein the inner cover layer has a hardness of 68 to 72.
29. A golf ball comprising:
a center having a hardness of 19 to 25;
an outer core layer having a hardness of 30 to 38;
an inner cover layer having a hardness of 68 to 72; and
an outer cover layer formed from a castable reactive liquid material, wherein the outer cover layer has a thickness of less than 0.05 inches and a hardness of 50 to 60.
30. The golf ball of claim 29, wherein the castable reactive liquid material comprises polyurethane.
31. The golf ball of claim 29, wherein the inner cover layer comprises ionomer resin.
32. The golf ball of claim 29, wherein the center comprises a first rubber-based material and the outer core layer comprises a second rubber-based material.
34. The golf ball of claim 32, wherein the first and second rubber-based materials have different physical properties.
35. A golf ball comprising:
a center having a hardness of 19 to 25;
an outer core layer having a hardness of 30 to 38;
an inner cover layer comprising ionomer resin having a hardness of 68 to 72; and
an outer cover layer comprising polyurethane, wherein the outer cover layer has a thickness of about 0.02 inches to about 0.04 inches and a hardness of 50 to 60.
36. The golf ball of claim 35, wherein the polyurethane is thermoset.
37. The golf ball of claim 35, wherein the inner cover layer has a thickness of about 0.02 inches to about 0.045 inches.
38. The golf ball of claim 35, wherein the ionomer resin has a flexural modulus of at least about 75,000 psi.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An arrangement for providing optical coupling between an external light source generating optical signals at a plurality of different wavelengths, the plurality defined by a wavelength range and a center wavelength, and a relatively thin, planar silicon optical waveguide, the arrangement comprising:
an evanescent coupling layer disposed over at least a portion of the planar silicon optical waveguide, the evanescent coupling layer exhibiting a refractive index less than the refractive index of silicon and having a substantially constant thickness of an average value selected for minimizing optical loss over the wavelength range associated with the external light source; and
a silicon-based prism coupling structure disposed over the evanescent coupling layer, the prism coupling structure including an input facet formed at a predetermined angle with respect to the waveguide surface and an output facet formed at the predetermined angle with respect to the waveguide surface, the prism coupling structure further including a planar lower surface disposed over the evanescent coupling layer.
2. The arrangement as defined in claim 1 wherein the wavelength range is defined as a subset of wavelengths within the 1.1-1.65 \u03bcm range.
3. The arrangement as defined in claim 1 wherein the generated signals exhibit a beam size associated with providing a predetermined optical loss for the selected evanescent coupling layer thickness.
4. The arrangement as defined in claim 1 wherein the thickness of the evanescent coupling layer is selected to minimize optical loss at essentially the center wavelength for a predetermined beam size.
5. The arrangement as defined in claim 1 wherein the thickness of the evanescent coupling layer is selected to minimize optical loss over the wavelength range, the selected thickness being less than the thickness associated with minimal optical loss at the center wavelength.
6. The arrangement as defined in claim 1 wherein the evanescent coupling layer comprises a dielectric material.
7. The arrangement as defined in claim 6 wherein the refractive index of the dielectric material is selected to provide a predetermined acceptable optical loss over the wavelength range for the selected thickness of the relatively thin, planar silicon optical waveguide.
8. The arrangement as defined in claim 7 wherein the refractive index is greater than 1.3.
9. The arrangement as defined in claim 6 wherein the dielectric material is selected from the group consisting of: silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide.
10. The arrangement as defined in claim 1 wherein the evanescent coupling layer comprises a single layer of material.
11. The arrangement as defined in claim 1 wherein the evanescent coupling layer comprises a plurality of sub-layers of material.
12. The arrangement as defined in claim 11 wherein each sub-layer of the plurality of sub-layers comprises the same material.
13. The arrangement as defined in claim 11 wherein at least two of the sub-layers of the plurality of sub-layers comprise a different material.
14. The arrangement as defined in claim 6 wherein the thickness of the planar silicon optical waveguide is selected to provide a predetermined acceptable loss over the wavelength range for the selected dielectric material of the evanescent coupling layer.
15. The arrangement as defined in claim 1 wherein the arrangement further comprises
input optical interfacing elements disposed between the external light source and the prism coupling structure input facet for collimating, shaping and steering an input optical beam to a predetermined entry point and angle of incidence with respect to the input coupling facet.
16. The arrangement as defined in claim 1 wherein the arrangement further comprises:
output optical interfacing elements for collimating, shaping and steering an output beam toward a receiving element.
17. The arrangement as defined in claim 16 wherein the output optical interfacing elements further provide focusing of the output beam into the receiving element.
18. The arrangement as defined in claim 16 wherein the output optical interfacing and receiving elements are integrated, at least in part, with the relatively thin, planar optical waveguide.
19. The arrangement as defined in claim 16 wherein the output optical interfacing elements comprise discrete components disposed external to the output facet for collimating, shaping and steering an output beam towards an external receiving element.
20. The arrangement as defined in claim 15 wherein the input interfacing elements further comprise
a beam steering system for directing an input optical beam to a predetermined entry point and angle of incidence on the prism coupling structure input coupling facet, the beam steering system capable of being translated and rotated to accomplish the directing function.
21. The arrangement as defined in claim 20 wherein the beam steering system functions to modify the entry point and angle of incidence by re-directing the input optical beam as the center wavelength changes.
22. The arrangement as defined in claim 20 wherein the beam steering system comprises at least one reflective optical element.
23. The arrangement as defined in claim 20 wherein the beam steering system comprises at least one transmissive optical element.
24. The arrangement as defined in claim 20 wherein the predetermined entry point and angle of incidence are selected to maximize optical coupling for a predetermined center wavelength.
25. The arrangement as defined in claim 20 wherein the arrangement further comprises
an output beam steering system for directing an output optical beam from the prism coupling structure output coupling facet into a receiving optical device.
26. The arrangement as defined in claim 20 wherein the beam steering system comprises a plurality of beam steering elements, each beam steering element associated with a specified wavelength within the wavelength range, wherein each beam steering element is independently operated to direct its associated input beam to a predetermined entry point and angle of incidence on the prism coupling structure input coupling facet.
27. The arrangement as defined in claim 20 wherein the arrangement further comprises
a feedback system for measuring the optical input signal coupled into the relatively thin, silicon optical waveguide and providing an adjustment output signal as an input to the beam steering system to modify the translational and rotational movements to maintain maximum optical coupling.
28. The arrangement as defined in claim 27 wherein the feedback system compares a tapped-off portion of the input optical signal from the relatively thin, silicon optical waveguide to a known maximum coupled signal, using the difference between the two values as the adjustment output signal.
29. The arrangement as defined in claim 27 wherein the feedback system compares the coupling efficiency of the input optical signal at the relatively thin, silicon optical waveguide to a known maximum value of coupling efficiency and uses the difference between the two values as the adjustment output signal.
30. An arrangement for providing optical coupling between an external light source generating optical signals at a plurality of different wavelengths, the plurality defined by a wavelength range and a center wavelength, and a relatively thin, planar silicon optical waveguide, the arrangement comprising:
an evanescent coupling region disposed over at least a portion of the planar silicon optical waveguide, the evanescent coupling region including
an input evanescent coupling region, wherein the thickness of the input evanescent coupling region varies monotonically such that an initial coupled portion of an input optical beam intercepts a thickness that is less than the thickness intercepted by a central coupled portion of the optical beam, and a final coupled portion of the optical beam intercepts a thickness that is greater than the thickness intercepted by the central coupled portion of the optical beam; and
an output evanescent coupling region, wherein the thickness of the output evanescent coupling region varies monotonically such that an initial coupled portion of an optical beam propagating along the planar silicon optical waveguide intercepts a thickness that is greater than the thickness intercepted by a central coupled portion of the propagating optical beam, and a final coupled portion of the propagating optical beam intercepts a thickness that is less than the thickness intercepted by the central coupled portion of the propagating optical beam; and

a silicon-based prism coupling structure disposed over the evanescent coupling region, the prism coupling structure including an input facet formed at a predetermined angle with respect to the planar silicon waveguide surface and an output facet formed at the predetermined angle with respect to the silicon planar waveguide surface, the prism coupling structure disposed over the evanescent coupling region.
31. The arrangement as defined in claim 30 wherein the wavelength range is defined as a subset of wavelengths in the 1.1-1.65 \u03bcm range.
32. The arrangement as defined in claim 30 wherein the thickness in the input and output portions of the evanescent coupling region vary linearly with distance along the propagation directly of the optical beam.
33. The arrangement as defined in claim 32 wherein the thickness of the input and output evanescent coupling portions at the locations intercepted by the central portion of the coupled optical beams and the slope of the linear variation are selected to achieved a predetermined value of optical loss over the wavelength range.
34. The arrangement as defined in claim 30 wherein the evanescent coupling region comprises a dielectric material.
35. The arrangement as defined in claim 30 wherein the refractive index of the dielectric material is selected to provide a predetermined acceptable optical loss over the wavelength range for a selected thickness of the relatively thin, planar silicon optical waveguide.
36. The arrangement as defined in claim 35 wherein the refractive index is greater than 1.3.
37. The arrangement as defined in claim 34 wherein the dielectric material is selected from the group consisting of: silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide.
38. The arrangement as defined in claim 30 wherein the evanescent coupling region comprises a single layer of material.
39. The arrangement as defined in claim 30 wherein the evanescent coupling region comprises a plurality of layers of material.
40. The arrangement as defined in claim 39 wherein each layer of the plurality of layers comprises the same material.
41. The arrangement as defined in claim 39 wherein at least two of the layers of the plurality of layers comprise a different material.
42. The arrangement as defined in claim 34 wherein the thickness of the planar silicon optical waveguide is selected to provide a predetermined acceptable loss over the wavelength range for the selected dielectric material of the evanescent coupling layer.
43. The arrangement as defined in claim 30 wherein the arrangement further comprises
input optical interfacing elements disposed between the external light source and the prism coupling structure input facet for collimating, shaping and steering an input optical beam to a predetermined entry point and angle of incidence with respect to the input facet.
44. The arrangement as defined in claim 30 wherein the arrangement further comprises
output optical interfacing elements for collimating, shaping and steering an output beam toward a receiving element.
45. The arrangement as defined in claim 44 wherein the output optical interfacing elements further provide focusing of the output beam into the receiving element.
46. The arrangement as defined in claim 44 wherein the output optical interfacing and receiving elements are integrated, at least in part, with the relatively thin, planar optical waveguide.
47. The arrangement as defined in claim 44 wherein the output optical interfacing elements comprise discrete components disposed external to the output facet for collimating, shaping and steering an output beam towards an external receiving element.
48. The arrangement as defined in claim 43 wherein the input optical interfacing elements further comprise
a beam steering system for directing an input optical beam to a predetermined entry point and angle of incidence on the prism coupling structure input facet, the beam steering system capable of being translated and rotated to accomplish the directing function.
49. The arrangement as defined in claim 48 wherein the beam steering system functions to modify the entry point and angle of incidence by re-directing the input optical beam as the center wavelength changes.
50. The arrangement as defined in claim 48 wherein the beam steering system comprises at least one reflective optical element.
51. The arrangement as defined in claim 48 wherein the beam steering system comprises at least one transmissive optical element.
52. The arrangement as defined in claim 48 wherein the predetermined entry point and angle of incidence are selected to maximize optical coupling for a predetermined center wavelength.
53. The arrangement as defined in claim 48 wherein the beam steering system functions to modify the position where the optical beam intercepts the input evanescent coupling portion until a predetermined value of coupling is achieved.
54. The arrangement as defined in claim 48 wherein the arrangement further comprises
an output beam steering system for directing an output optical beam from the prism coupling structure output coupling facet into a receiving optical device.
55. The arrangement as defined in claim 48 wherein the beam steering system comprises a plurality of beam steering elements, each beam steering element associated with a specific wavelength within the wavelength range, wherein each beam steering element is independently operated to direct its associated input beam to a predetermined entry point and angle of incidence on the prism coupling structure input coupling facet.
56. The arrangement as defined in claim 48 wherein the arrangement further comprises
a feedback system that monitors the input signal coupled into the relatively thin, planar silicon waveguide and provides adjustment signals to the beam steering system to modify the translational and rotational movements to maintain maximum input coupling.
57. The arrangement as defined in claim 56 wherein the feedback system compares a tapped-off portion of the input optical signal from the relatively thin, silicon optical waveguide to a known maximum coupled signal, using the difference between the two values as the adjustment output signal.
58. The arrangement as defined in claim 56 wherein the feedback system compares the coupling efficiency of the input optical signal at the relatively thin, silicon optical waveguide to a known maximum value of coupling efficiency and uses the difference between the two values as the adjustment output signal.
59. The arrangement as defined in claim 30 wherein the external light source comprises an optical fiber.
60. The arrangement as defined in claim 57 wherein the optical fiber comprises a lensed optical fiber.
61. The arrangement as defined in claim 44 wherein the receiving optical element comprises an optical fiber.
62. The arrangement as defined in claim 61 wherein the receiving optical fiber comprises a lensed optical fiber.