Author: claimsbot

1. A field effect transistor (FET) comprising:
a substrate, a source, a gate and a drain;
multiple channels in said substrate between said drain and said source to improve the linearity of drain current vs drain voltage characteristics when a gate voltage exceeding the threshold voltage is applied at the gate,
said multiple channels having alternate layers of undoped layers of first kind of semiconductor and doped layers of second kind of semiconductor, and
said doped layers having doping concentrations which varies in steps with depth from said gate,
wherein the channels are selected from the group consisting of uniformly doped, delta doped, spike doped, doped sub-well, and (InAs sub-well, TlP (TlAs) sub-well, InN sub-well and InAs, TlP, TlAs, InN) self assembled quantum dots for Ill-V compound semiconductors,
wherein the channels are selected from the group consisting of uniformly doped, delta doped, spike doped, Ge sub-well, Sn sub-well and self assembled quantum dots selected from the group consisting of Ge and Sn for IV-IV compound semiconductors, and formed on buffer layer grown on the substrate, and
wherein said the doped channelundoped barrier semiconductor pairs are selected from the group of II-VIIII-V, IV-IVIII-V, IV-IVII-VI semiconductors consisting of SiGaP, SiZnS, GaAsZnSe, and InSbCdTe.
2. A metal semiconductor Schottky barrier hetero-junction field effect transistor (HFET) comprising:
a substrate, a source, a gate and a drain;
multiple channels in said substrate between said drain and said source to improve the linearity of drain current vs drain voltage characteristics when a gate voltage exceeding the threshold voltage is applied to the gate, wherein
said multiple channels have alternate layers of doped layer of first kind of semiconductor and undoped layers of second kind of semiconductor, said multiple channels are created in second kind semiconductor by doping the first kind semiconductor, and said doped layers have doping concentrations which decreases in steps with depth from said gate;
a Schottky layer over said multiple channels; and
two undoped layers to cap the multiple channels and to support said source, said drain and said gate.
3. The HFET as described in claim 2, wherein said layers of first kind are selected from the group consisting of binary, ternary and quaternary compound semiconductor layers lattice mismatched to the substrate.
4. The HFET as described in claim 2, wherein said layers of first kind are selected from the group consisting of binary, ternary and quaternary compound semiconductor layers lattice-matched to the substrate.
5. The HFET as described in claim 2, wherein said second kind 2-DEG channels are selected from the group consisting of binary, ternary and quaternary compound semiconductor layers pseudomorphic to the substrate.
6. The HFET described in claim 2, wherein said second kind 2-DEG channels are selected from the group consisting of binary and quaternary compound semiconductor layers lattice mismatched to the substrate.
7. The HFET as described in claim 2, wherein said channels comprise of compounds of TlP, TlAs, TlSb, having: at least one of the said channel of TlInP, at least one of the said channel of TlGaInAs, and at least one of the said channel of TlGaInP.
8. The HFET as described in claim 2, wherein any combination of the first kindsecond kind pairs lattice matched to the group consisting of GaAs and Ge substrate is selected from the group III-V compound semiconductor family consisting of: GaAs(AlGaAs, GaInP, AlAs, AlInP), TlGaP(AlGaAs, GaInP, AlAs, AlInP).
9. A HFET as described in claim 2, wherein any combination of the first kindsecond kind pairs lattice mismatched to InP substrate are selected from the group III-V compound semiconductor family consisting of: (GaInAs, GaInAsP, AlGaInAs, GaAsSb, InAsP) (AlInAs, AlInAsSb, AlGaPSb, AlGaAsSb, AlAsSb, AlGaInAsSb), (TlGaInIP, TlInP, TlGaInAs)(AlInAs, AlAsSb, AlInAsSb, AlGaAsSb) and (GaInAs, AlGaInAs, GaInAsPInP).
10. The HFET as described in claim 2, wherein the first kindsecond kind mismatched to substrate selected from the group consisting of GaAs and Ge are selected from the group III-V compound semiconductor family consisting of: GaInAsN(AlGaAs, GaInP, AlInP, AlAs), GaAsAlGaPSb, (GaInAs, GaInAsP, AlGaInAs, GaAsSb, InAsP)(AlGaAs, GaInP, AlInP, AlAs, AlInAs, AlInAsSb, AlGaPSb, AlGaAsSb, AlAsSb, AlGaInAsSb), (TlGaP, TlGaInP, TlInP, TlGaInAs)(AlGaAs, GaInP, AlInP, AlAs, AlInAs, AlAsSb, AlInAsSb, AlGaAsSb) and (GaInAs, AlGaInAs, GaInAsPInP).
11. The HFET as described in claim 2, wherein any combination of the first kindsecond kind pairs are selected from the group III-V compound semiconductor family consisting of: (GaSb, GaAsSb, GaInSb)(AlGaAsSb, AlSb, AlSbAs, AlInAsSb), (InAs, InAsSb)AlGaAsSb, AlSb, AlAsSb, AlGaSb,AlInAsSb), GaInAsSbAlGaAsSb, AlSb, AlAsSb, AlGaSb, AlInAsSb), TlInAs(AlGaAsSb, AlSb, AlAsSb, AlGaSb, AlInAsSb), InSbAlInSb.
12. The HFET as described in claim 2, wherein any combination of the first kindsecond kind pairs deposited on the group consisting of Sapphire, GaN, SiC and AlN substrate is selected from the group III-V compound semiconductor family consisting of: GaNAlGaN, GaInNAlGaN, GaNAlN and GaInNAlN.
13. The HFET as described in claim 2, further comprising an undoped buffer layer between said substrate and said multiple channels, wherein the said buffer is selected from the group consisting of AlInP, AlGaAs, AlAs, GaInP on GaAs substrate.
14. The HFET as described in claim 2, further comprising an undoped buffer layer, wherein said buffer is selected from the group consisting of metamorphic and graded AlInAs, AlGaInAs, AlSbAs, AlGaAsSb, AlInAsSb, AlSb, AlGaSb on GaAs substrate.
15. The HFET as described in claim 2, wherein said the first kind semiconductor and the second type semiconductor are selected from the group II-VI semiconductors family consisting of ZnSe, ZnS, CdTe, and CdS.
16. The HFET as described in claim 2, wherein said the first kind semiconductor and the second type semiconductor are selected from the group of II-VIIII-V, IV-IVIII-V, IV-IVII-VI semiconductors family consisting of SiGaP, SiZnS, GaAsZnSe, and InSbCdTe.
17. The HFET as described in claim 2, wherein alternate layers of first kind of semiconductor and a second kind of semiconductor forming heterojunction are selected from the group of IV-IV semiconductor family consisting of Si, Ge, Sn and C and said multiple channels are created in first kind semiconductor by doping the second kind semiconductor.
18. The HFET as described in claim 17, wherein said any combination of lattice firstsecond kind pairs are selected from the group of IV-IV semiconductor family consisting of SiGeSi, GeCSi, SiGeCSi, GeCSi, GeSnSi, SiSiGe, SiSiC, SiGeSiC, SiSiGeC, SiGeSiGeC.
19. The HFET as described in claim 17, wherein the channels are selected from the group consisting of Ge sub-well, Sn sub-well and self assembled quantum dots; and the charge supply layer is selected from the group consisting of delta doped, spike doped, and planar doped.
20. The HFET as described in claim 17, further comprising a cap over said FET multiple channels and support said source, said drain, and said gate.
21. The HFET as described in claim 17, wherein the cap provides Schottky barrier selected from the group consisting of Si and GaP.
said multiple channels of 2-DEG or 2-DHG are created in second kind semiconductor by selective implantation into both first and second kind semiconductor, and
said multiple channels are created in second kind semiconductor by doping with N- or P-type conductivity and using undoped second kind semiconductor.
22. The HFET as described in claim 2, further comprising an undoped buffer layer between said substrate and said multiple channels, wherein said buffer is selected from the group consisting of lattice matched InP, AlGaInAs, AlInAs, AlSbAs, AlGaAsSb, AlInAsSb on InP substrate.
23. The HFET as described in claim 2, further comprising an undoped buffer layer between said substrate and said multiple channels, wherein said buffer is selected from the group consisting of metamorphic and graded AlInAs, AlGaInAs,AlSb, AlGaSb, AlSbAs, AlGaAsSb, AlInAsSb on InP substrate.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A token, comprising:
a memory, including:
a first set of processing instructions for configuring remote access to a particular remote resource residing upon a computing device on a network the first set of processing instructions containing device configuration information of credentials, a list of identified resources on the device and associated user requests with the resources, and administrative tasks;
a second set of processing instructions for operating the token in a legacy environment;
security credentials; and
resource configuration information for the particular remote resource, wherein each particular remote resource has its own configuration information including intended accesses, authentication measures, and safeguards for the remote resource to maintain;
an interface through which a connection to a client host is established; and

a processor:
in response to user input for configuring a remote access connection with the particular remote resource, executing the first set of processing instructions that include:
establishing a trusted connection through the interface with the particular remote resource;
exchanging credentials associated with the particular remote resource over the trusted connection for establishing a secure connection with the particular remote resource over an untrusted connection; and
defining the resource configuration information for accessing user selected data or services available at the particular remote resource; and

in response to user input received in a legacy environment, executing the second set of processing instructions that include automatically:
establishing, over an untrusted connection to the client host available through the interface, a secure connection with the particular remote resource using the security credentials stored in the memory;
configuring the secure connection for access to the user selected data or services available at the particular remote resource using the configuration information for the particular remote resource stored in the memory;
making the user selected data or services at the particular remote resource available in the legacy environment; and
defending against attempted access to data or services available at the token other than the user selected data or services made available in the legacy environment, including attempts by the client host.
2. The token according to claim 1, wherein the legacy environment comprises an computational operating environment with interfaces, protocols, and standards for receiving and processing user input defining one of either a coupling action to establish a connection between the token and the particular remote resource, or an input action at a user interface issuing a command to the legacy environment.
3. The token according to claim 1, wherein the interface of the token is one or a combination of a physical or logical, network interface or device interface.
4. The token according to claim 1, wherein the user input comprises coupling the token with the client host, the legacy environment operates between the token and the client host, and the untrusted connection, over which the secure connection is established, is established through a device interface of the client host.
5. The token according to claim 1, wherein the user input comprises coupling the token with the client host, the legacy environment operates between the token and the client host, and the untrusted connection, over which the secure connection is established, is established through a network interface.
6. The token according to claim 1, wherein the user input comprises an input action at a user interface of the token that issues a command, the legacy environment operates between the token and the client host, and the untrusted connection, over which the secure connection is established, is established through a network interface.
7. The token according to claim 1, wherein the user input comprises coupling the token with the client host, the legacy environment operates between the token and the client host; and the untrusted connection, over which the secure connection is established, is established through a device interface of the client host.
8. The token of claim 1, the interface further comprising one of a wireless interface in accordance with IEEE 802.11x, a Bluetooth interface, an infrared interface, an interface in accordance with IEEE 1394, a wide-area or metropolitan-area wireless interface such as one in accordance with IEEE 802.16, an Ethernet interface, and a local area network interface.
9. The token of claim 1, the security credentials further comprising one of public keys, public-key certificates, cryptographic hashes of public keys, cryptographic hashes of public-key certificates, private keys, tokens, secrets or passwords, symmetric cryptographic keys, cryptographic hashes of tokens, anonymous or privacy-preserving cryptographic credentials, and Kerberos or other cryptographic \u201ctickets\u201d.
10. The token of claim 1, the token further comprising a biometric identifier.
11. The token of claim 1, the token comprising one of a pair of wormhole tokens for a wormhole wire.
12. The token of claim 11, wherein one of the pair of wormhole tokens is connected to a computer and another of the pair of wormhole tokens is connected to a printer, camera, or other legacy device.
13. The token of claim 1, the token further comprising a media player and the legacy environment includes at least one legacy device.
14. The token of claim 13, the legacy device comprising one of a stereo, an internal speaker, an internal display, an external display, a television, an external speaker, at least one headphone or a personal computer.
15. The token of claim 1, the token further comprising a storage token.
16. The token of claim 15, the processor further to encrypt the memory on the storage token when the storage token is not active.
17. The token of claim 15, the first set of processing instructions further to limit access to the storage token by a host.
18. The token of claim 1, wherein the processor in executing the second set of processing instructions automatically:
discovers a partner token using security credentials and a partner token identifier stored in the memory;
establishes a secure connection to the partner token; and
proxies the user selected data or service available at the server host through the secure connection to the partner token.
19. The token of claim 18, wherein the service is printing.
20. A method, comprising:
receiving a user input at a token attached to a client host;
if the user input is an input for configuring a remote access connection with a particular remote resource residing upon a computing device on a network:
establishing a trusted connection through an interface with the particular remote resource;
exchanging credentials over the trusted connection for establishing a secure connection with the particular remote resource over an untrusted connection; and
defining resource configuration information for accessing user selected data or services available at the particular remote resource, wherein the resource configuration information comprises intended accesses, authentication measures, and safeguards for the remote resource to maintain; and
if the user input is received in a legacy environment:
establishing, over an untrusted connection with the client host available through the interface, a secure connection with the particular remote resource using security credentials stored in a memory;
configuring the secure connection for access to the user selected data or services available at the particular remote resource using resource configuration information stored in the memory, wherein each particular remote resource has a configuration for that particular remote resource including intended accesses, authentication measures, and safeguards for the remote resource to maintain;
making the user selected data or services at the particular remote resource available in the legacy environment; and
defending against attempted access to data or services available at the token other than the user selected data or services made available in the legacy environment, including attempts by the client host.
21. The method according to claim 20, wherein the user input comprises coupling the token with the client host and establishing the untrusted connection occurs through a device interface of the client host.
22. The method according to claim 20, wherein the user input comprises coupling the token with the client host and establishing the untrusted connection occurs through a network interface.
23. The method according to claim 20, wherein receiving the user input comprises receiving an input action at a user interface of the token that issues a command, and establishing the untrusted connection occurs through a network interface.
24. The method according to claim 20, wherein the user input comprises coupling the token with the client host and establishing the untrusted connection occurs through a device interface of the client host.
25. The method according to claim 20, further comprising
discovering a partner token using security credentials and a partner token identifier stored in the memory;
establishing a secure connection to the partner token; and
proxying the user selected data or service available at the remote resource through the secure connection to the partner token.

1. A method for configuring a central subcarrier, comprising:
mapping a first downlink control channel onto a part (f1) of a downlink bandwidth (fW) of a cell, and configuring a first virtual central subcarrier in f1; and
mapping a downlink data channel onto fW of the cell, and configuring a central subcarrier on fW, wherein
f1 is different or partly different from a bandwidth f2 mapped to a second downlink control channel of the cell or a neighboring cell, an overlap between f1 and f2 is at least one subcarrier, or at least one idle subcarrier exists between f1 and f2, or at least one non-idle subcarrier and at least one idle subcarrier exist between f1 and f2; and
the first virtual central subcarrier is located on a grid position of a central frequency, a distance between the first virtual central subcarrier and a second virtual central subcarrier configured in f2 is an integer multiple of a frequency domain width of the subcarrier, and borders of physical resource blocks (PRBs) are aligned between the cell and the neighboring cell.
2. The method according to claim 1, wherein:
the first virtual central subcarrier is located on a grid position of a central frequency, and the distance between the first virtual central subcarrier and the second virtual central subcarrier configured in f2 is an integer multiple of the frequency domain width of the subcarrier, which comprises:
the second virtual central subcarrier is located on the grid position of the central frequency, the distance between the first virtual central subcarrier and the second virtual central subcarrier is an integer multiple of a grid frequency domain width of the central frequency, and the distance between the first virtual central subcarrier and the second virtual central subcarrier is an integer multiple of the frequency domain width of the subcarrier.
3. The method according to claim 1, wherein:
in the case of multi-carrier transmission, the bandwidth f2 mapped to the second downlink control channel comprises the bandwidth f2 of the second downlink control channel mapped to the cell; and
in the case of orthogonal transmission of the downlink control channel, the bandwidth f2 mapped to the second downlink control channel comprises the bandwidth f2 of the second downlink control channel mapped to the neighboring cell.
4. The method according to claim 1, wherein the configuring the central subcarrier on fW comprises at least one of the following steps:
configuring the central subcarrier on an overlapping subcarrier between f1 and f2, and configuring the central subcarrier on an idle subcarrier between f1 and f2.
5. The method according to claim 4, further comprising:
sending downlink control channel signals andor downlink reference signals on subcarriers other than the overlapping subcarrier between f1 and f2.
6. The method according to claim 5, wherein the sending the downlink control channel signals andor downlink reference signals on the subcarriers other than the overlapping subcarrier between f1 and f2 comprises:
sending signals of PCFICH, andor PHICH, andor CRS, andor CSI-RS on the subcarriers other than the overlapping subcarrier between f1 and f2.
7. The method according to claim 4, wherein
physical resource blocks (PRBs) adjacent to the overlapping subcarrier between f1 and f2 comprise subcarriers other than the overlapping subcarrier between f1 and f2.
8. The method according to claim 1, further comprising:
when a coverage scope of the cell is less than a first threshold, increasing bandwidth occupied in fW and decreasing protection bandwidth occupied in fW.
9. The method according to claim 1, further comprising:
setting an idle subcarrier or a non-idle subcarrier on the second virtual central subcarrier of the cell, wherein the idle subcarrier or non-idle subcarrier belongs to a neighboring PRB.
10. A device for configuring a central subcarrier, comprising:
a first mapping and configuring unit, configured to: map a first downlink control channel onto a part (f1) of a downlink bandwidth (fW) of a cell, and configure a first virtual central subcarrier in f1, wherein f1 is different or partly different from a bandwidth (f2) mapped to a second downlink control channel, an overlap between f1 and f2 is at least one subcarrier, or at least one idle subcarrier exists between f1 and f2, or at least one non-idle subcarrier and at least one idle subcarrier exist between f1 and f2; the first virtual central subcarrier is located on a grid position of a central frequency, a distance between the first virtual central subcarrier and a second virtual central subcarrier configured in f2 is an integer multiple of a frequency domain width of the subcarrier, and physical resource blocks (PRBs) are aligned between the cell and a neighboring cell; and
a second mapping and configuring unit, configured to map a downlink data channel onto fW of the cell, and configure a central subcarrier on fW.
11. The device according to claim 10, wherein:
the first virtual central subcarrier is located on a grid position of a central frequency, and the distance between the first virtual central subcarrier and the second virtual central subcarrier configured in f2 is an integer multiple of the frequency domain width of the subcarrier, which comprises:
the second virtual central subcarrier is located on the grid position of the central frequency, the distance between the first virtual central subcarrier and the second virtual central subcarrier is an integer multiple of a grid frequency domain width of the central frequency, and the distance between the first virtual central subcarrier and the second virtual central subcarrier is an integer multiple of the frequency domain width of the subcarrier.
12. The device according to claim 10, wherein:
in the case of multi-carrier transmission, the bandwidth f2 mapped to the second downlink control channel comprises the bandwidth f2 of the second downlink control channel mapped to the cell; and
in the case of orthogonal transmission of the downlink control channel, the bandwidth f2 mapped to the second downlink control channel comprises the bandwidth f2 of the second downlink control channel mapped to the neighboring cell.
13. The device according to claim 10, wherein the second mapping and configuring unit is specifically configured to:
map a downlink data channel onto fW of the cell;
configure at least one of the central subcarrier on an overlapping subcarrier between f1 and f2 and a central subcarrier on the idle subcarrier between f1 and f2.
14. The device according to claim 13, further comprising:
a sending unit, configured to send downlink control channel signals andor downlink reference signals on subcarriers other than the overlapping subcarrier between f1 and f2.
15. The device according to claim 14, wherein the sending unit is specifically configured to:
send signals of PCFICH, andor PHICH, andor CRS, andor CSI-RS on subcarriers other than the overlapping subcarrier between f1 and f2.
16. The device according to claim 13, wherein physical resource blocks (PRBs) adjacent to the overlapping subcarrier between f1 and f2 comprise subcarriers other than the overlapping subcarrier between f1 and f2.
17. The device according to claim 10, further comprising:
a bandwidth adjusting unit, configured to: increase the bandwidth occupied in fW and decrease the protection bandwidth occupied in fW when a coverage scope of the cell is less than a first threshold.
18. The device according to claim 10, further comprising:
a configuring unit, configured to set an idle subcarrier or a non-idle subcarrier on the second virtual central subcarrier of the cell, wherein the idle subcarrier or non-idle subcarrier belongs to a neighboring PRB.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A fluid injection nozzle comprising:
a valve body having an inner circumference forming a fluid passage and converging toward a fluid downstream side, and having a valve seat on said inner circumference;
an injection port plate arranged on the fluid passage downstream side of said valve seat and having an injection port for injecting a fluid to flow out of said fluid passage; and
a valve member for shutting said fluid passage, when seated on said valve seat, and for opening said fluid passage when unseated from said valve seat, wherein
an injection port axis joining a center of an fluid inlet and a center of a fluid outlet of said injection port is inclined with respect to a center axis of said injection port plate,
two lines of intersection between a virtual plane containing said injection port axis and normal to said injection port plate and an injection port inner circumference of said injection port plate forming said injection port are inclined in a same direction as that of said injection port axis with respect to said center axis, and
when a first intersection line formed on an obtuse angle side by said injection port axis and a fluid inlet side end face of said injection port plate has a first angle of inclination 1 with respect to said center axis and when a second intersection line formed on an acute angle side by said injection port axis and the fluid inlet side end face has a second angle inclination 2, 1<2.
2. A fluid injection nozzle according to claim 1, wherein,
said injection port is formed in plurality, and
said injection port axis of each injection port is inclined in a direction toward a fluid outlet side apart from said center axis.
3. A fluid injection nozzle according to claim 1, wherein 1 is 15 degrees or more.
4. A fluid injection nozzle according to claim 1, wherein 321 and 315 degrees.
5. A fluid injection nozzle according to claim 1, wherein
when the distance from an intersection between said second intersection line and said fluid inlet side end face to said first intersection line is designated by d and when said injection port plate has a thickness t, following relation is satisfied:
0.5td1.2
6. A fluid injection nozzle according to claim 1, wherein
at a plane where an intersection line between a virtual plane perpendicular to said injection port axis and said injection port inner circumference is a circle, when a minor axis diameter of said circle is a and a major axis diameter is b, following relation is satisfied:
0.5ab1
7. A fluid injection nozzle according to claim 1, wherein
said injection port is formed in plurality; and in a group of injection ports lying around said center axis and having their fluid inlets on a common circumference, when said circumference has a diameter DH, when said valve member to be seated on said valve seat has a seat diameter Ds, when a normal distance from an annular seat portion of said valve seat, on which said valve member is seated, to said fluid inlet side end face is designated by H, and when a distance between a leading end face of said valve member confronting said fluid inlet side end face and said fluid inlet side end face at the lifting time of said valve member is designated by h, following relations are simultaneously satisfied:
1.5<DsDH 6, and h<1.5d; and H<4d
8. A fluid injection nozzle according to claim 1, wherein
said injection port is formed in plurality,
a fluid chamber formed just above a fluid inlet side of said injection port is diametrically larger than a fluid downstream open edge formed by said inner circumference, and
said injection port is opened at its fluid inlet in the inner circumference and the outer circumference of a virtual envelope on which the virtual plane extended from said inner circumference toward the fluid downstream side intersects said injection port plate.
9. A fluid injection nozzle according to claim 7, wherein
of a group of injection ports lying around said center axis and having their fluid inlets on a common circumference, when the circumference of the injection port group arranged on the inner circumference side of said virtual envelope has a diameter DH1 and when the circumference of the injection port group arranged on the outer circumference side of said virtual envelope has a diameter DH2, following relations are simultaneously satisfied:
1.5<DsDH1<6, and 0.5<DsDH2<2
10. A fuel injection valve comprising:
a cylindrical valve body having an opening at its leading end and a valve seat on the upstream side of said opening;
a valve member housed slidably in said valve body and having a seat portion on the outer circumference of its one end portion for abutting against said valve seat;
an injection port plate arranged on the leading end face of said valve body for closing the opening of said valve body and having an injection port for injecting a fuel; and
a fuel passage formed between one end portion of said valve member and a passage wall face of said injection port plate so that the fuel having flown in from between said valve seat and said seat portion may flow toward a fuel inlet of said injection port along the passage wall of said injection port plate, wherein
said injection port is so formed through said injection port plate from its fuel inlet to its fuel outlet that it is inclined at a predetermined angle backward to the upstream side with respect to a fuel flow direction of said fuel passage; and
on a port wall face from the fuel inlet to the fuel outlet of said injection port, there are formed two curvature circle portions which have their centers of curvature on a center axis of said injection port and which are directed backward to the upstream side with respect to the flow direction of said fuel passage.
11. A fuel injection valve according to claim 10, wherein
said two curvature circle portions include:
a first curvature circle portion formed on the center axis side of said fuel injection valve and having a predetermined radius of curvature having said center of curvature on the center point of a circle of curvature; and
a second curvature circle portion formed on the side opposed to the center axis side of said fuel injection valve and having a radius of curvature having said center of curvature on the center point of said circle of curvature and substantially identical to that of said first curvature circle portion.
12. A fuel injection valve according to claim 10, wherein said injection port is arranged in plurality on an imaginary line of a single circle on the center axis of said injection port plate.
13. A fuel injection valve according to claim 1, wherein said injection port is arranged in plurality on imaginary lines of double circles on the center axis of said injection port plate.