Author: claimsbot

1. A plasma reactor for processing a semiconductor workpiece, comprising:
a reactor chamber having a chamber wall;
a workpiece support within said chamber for holding the semiconductor workpiece;
an overhead electrode overlying said workpiece support;
a VHF power generator of RF power at a VHF frequency, said VHF power generator being coupled between said workpiece support and said overhead electrode; and
a fixed impedance match element comprising:
a larger area ground conductor coupled to a return terminal of said VHF power generator and having a cylindrical portion terminated on said chamber wall;
a generally elongate smaller area RF conductor adjacent and spaced from said larger area ground conductor and terminated on said overhead electrode;
an RF tap at a location on said generally elongate smaller area RF conductor, said location corresponding to at least a near match between an output impedance of said VHF power generator and a characteristic impedance of said fixed impedance match element, said RF tap comprising a coupling between an RF output terminal of said VHF power generator and said generally elongate smaller area RF conductor.
2. The reactor of claim 1 further comprising an MERIE magnetic field generator for producing an MERIE magnetic field, wherein said MERIE magnetic field rotates over time across a top surface of said workpiece.
3. The reactor of claim 2 wherein said MERIE field generator comprises a plurality of electromagnets situated about said chamber wall.
4. The reactor of claim 2 wherein said MERIE field generator comprises a plurality of permanent magnets situated about said chamber wall.
5. The reactor of claim 1 wherein said overhead electrode comprises a gas distribution showerhead.
6. The reactor of claim 2 wherein said MERIE magnetic field enhances uniformity of plasma ion distribution in said chamber.
7. The reactor of claim 1 wherein said fixed impedance match element comprises a coaxial tuning stub, said larger area grounded conductor comprises a coaxial outer conductor and said generally elongate smaller area RF conductor comprises a coaxial inner conductor inside said coaxial outer conductor.
8. The reactor of claim 1 wherein said fixed impedance match element comprises a strip line circuit wherein said larger area grounded conductor comprises a planar top and a coaxial side wall, said generally elongate smaller area RF conductor comprises a strip line conductor generally parallel to said planar top and spaced therefrom by a gap corresponding to a characteristic impedance of said fixed impedance match element.
9. The reactor of claim 5 further comprising a process gas source and at least an elongate gas conduit coupling said gas distribution showerhead to said gas source, said generally elongate smaller area RF conductor being hollow along its length and said elongate gas conduit being inside of and generally following a path of said generally elongate smaller area RF conductor.
10. The reactor of claim 9 wherein said gas distribution shower head comprises at least an internal thermal control passage and said reactor further comprises at least a thermal control medium source for fluid or gas and at least an elongate thermal control conduit connecting said thermal control medium source to said internal thermal control passage, said elongate thermal control conduit being inside of and generally following a path of said generally elongate smaller area RF conductor.
11. The reactor of claim 1 wherein said tap is displaced from said location by a fraction of the length of said generally elongate smaller area RF conductor, whereby to optimize an impedance match space of said fixed tuning element.
12. The reactor of claim 11 wherein the characteristic impedance of said fixed tuning element is different from the output impedance of said VHF power generator by an amount that optimizes a match space between the characteristic impedance of said fixed match element, the output impedance of said VHF power generator and a plasma load impedance of said chamber.
13. The reactor of claim 1 further comprising a process-compatible layer on a surface of said overhead electrode facing said workpiece support.
14. The reactor of claim 13 wherein said process-compatible layer comprises silicon-carbide.
15. The reactor of claim 13 further comprising:
plural gas injectors in said overhead electrode facing into said chamber.
16. The reactor of claim 15 further comprising:
an insulating layer between said generally elongate smaller area RF conductor and said overhead electrode.
17. The reactor of claim 16 wherein said insulating layer provides sufficient capacitance to at least reduce arcing within said plural gas injectors.
18. The reactor of claim 16 further comprising:
an RF bias power source of an HF frequency connected to said workpiece support.
19. The reactor of claim 18 wherein a capacitance of said insulating layer corresponds to a peak admittance through said overhead electrode and said fixed impedance match element for a harmonic of said HF frequency, whereby to suppress plasma sheath harmonics.
20. The reactor of claim 15 wherein said gas injectors comprise arcuate narrow slots.
21. The reactor of claim 20 wherein an individual one of said arcuate narrow slots comprises an annulus.
22. The reactor of claim 1, further comprising a magnetic field generator situated about said chamber and designed to generate a magnetic field inside said chamber.
23. The reactor of claim 22, wherein said magnetic field affects the ion distribution of plasma generated in said chamber.
24. The reactor of claim 22, wherein said magnetic field generator comprises at least one electromagnet.
25. The reactor of claim 22, wherein said magnetic field generator comprises at least one permanent magnet.
26. A plasma reactor for processing a semiconductor workpiece, comprising:
a reactor chamber having a chamber wall;
a workpiece support within said chamber for holding the semiconductor workpiece;
an overhead electrode overlying said workpiece support;
a first RF power generator for producing RF power at a first frequency and having an output terminal coupled to said overhead electrode;
a second RF power generator for producing RF power at a second frequency different from said first frequency and having an output terminal coupled to said workpiece support pedestal;
a magnetic field generator for producing a rotating magnetic field in said reactor chamber that rotates over time across a top surface of said workpiece.
27. The reactor of claim 26 further comprising a fixed impedance match element coupled between said first RF power generator and said overhead electrode.
28. The reactor of claim 26 wherein a return terminal of said first RF power generator is coupled to said workpiece support.
29. The reactor of claim 29 wherein a return terminal of said second RF power generator is coupled to said overhead electrode.
30. The reactor of claim 29 wherein said first frequency is a VHF frequency, said second frequency is an HF frequency.
31. The reactor of claim 26 wherein said magnetic field generator comprises plural electromagnets situated about said chamber wall.
32. The reactor claim 26 wherein said magnetic field generator comprises plural permanent magnets situated about said chamber wall.
33. The reactor claim 27 wherein said fixed impedance match element comprises one of: (a) a coaxial tuning stub, (b) a strip line circuit.
34. The reactor of claim 27 wherein said fixed impedance match element provides a low impedance path to ground for RF power at said second frequency from said wafer support.
35. The reactor of claim 34 wherein said fixed impedance match element has a resonant frequency at or near said first frequency of said first RF power generator.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An endovascular delivery system comprising:
a stent delivery catheter, and
an imaging catheter,
wherein one of the stent delivery catheter or the imaging catheter is received within the other.
2. The delivery system of claim 1, wherein the imaging catheter is received within the stent delivery catheter.
3. The delivery system of claim 2, wherein the stent delivery catheter is adapted to deliver an implantable valve comprising a stent frame.
4. The delivery system of claim 3, wherein the implantable valve and stent delivery catheter is adapted for transcatheter aortic valve replacement (TAVR) applications.
5. The delivery system of claim 1, wherein the imaging catheter is an ultrasound imaging catheter.
6. The delivery system of claim 1, wherein the stent delivery catheter and an imaging probe of the imaging catheter are set at a fixed position relative to each other.
7. The delivery system of claim 1, wherein the stent delivery catheter and an imaging probe of the imaging catheter are free to move relative to one another in the delivery system, wherein the relative position between the stent delivery catheter and the imaging probe is tracked.

1. A method for providing online information in a networked user environment in which an end-user runs an application program and transmits data to an online-server over an online connection while running the application program, the method being characterized by the steps of
a.) providing a user input means for signaling a request to said server;
b.) receiving a request from said end-user;
c.) establishing a communication channel between said end-user and an agent according to the communicatoin facilities associated with the end-user;
e.) providing history information about the user activities transmitted in one or more transaction parts of an intended business process in the current application program session to a terminal of said agent or to input means of a dedicated support program.
2. The method according to claim 1, further comprising the step of: determining communication facilities available for use by said end-user.
3. The method according to claim 1, in which the communication channel comprises voice transmission.
4. The method according to the preceding claim in which the voice transmission is performed via the online connection already in use by the application program of the end-user.
5. The method according to claim 1, further comprising the step of completing the business process intended by the end-user by an action initiated by the help agent or the support program after confirmation by the end-user.
6. The method according to claim 1, further comprising the step of sending a context-sensitive help window derived by an evaluation of said already transmitted user transaction part.
7. The method according to claim 1, further comprising the step of after user confirmation recording additional user activities of the current task on an online server accessible to the agent or the support program.
8. A computer system having means for performing the steps of a method according to one of the preceding claims 1 to 7.
9. A computer program for execution in a data processing system comprising computer program code portions for performing respective steps of the method according to anyone of the preceding claims 1 to 7,
when said computer program code portions are executed on a computer
10. A computer program product stored on a computer usable medium comprising computer readable program means for causing a computer to perform the method of anyone of the claims 1 to 7,
when said computer program product is executed on a computer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A culture of cells that produces a CPD glycosylase protein wherein for at least one period of at least ten minutes, at least 25 weight percent of the total protein produced by the culture during the period is the CPD glycosylase protein.
2. The culture of claim 1 wherein the CPD glycosylase protein is T4 endonuclease V.
3. A method for producing a CPD glycosylase protein comprising:
(a) culturing cells which produce the CPD glycosylase protein; and
(b) collecting the CPD glycosylase protein;
wherein the CPD glycosylase protein comprises at least 25 weight percent of the total protein produced by the cells during step (a).
4. The method of claim 3 wherein the CPD glycosylase protein is T4 endonuclease V.
5. A method for producing a protein comprising:
(a) culturing cells which produce the protein, at least some of said protein being in inclusions bodies; and
(b) collecting the protein;
wherein in step (b), at least part of the protein produced by the cells in step (a) is subjected to a mixing process that comprises: (i) forming two or more flowing streams at least one of which contains inclusion bodies which contain the protein, and (ii) impinging the streams on one another to disrupt at least some of the inclusion bodies.
6. The method of claim 5 wherein the at least one flowing stream which contains inclusion bodies containing the protein comprises intact cells.
7. The method of claim 5 wherein the at least one flowing stream which contains inclusion bodies containing the protein comprises disrupted cells.
8. The method of claim 5 wherein:
(i) at least one of the flowing streams has a velocity V1 prior to the impingement, and
(ii) the impingement produces a stream that has a velocity V2, where V1 minus V2 is greater than or equal to 90 meterssecond.
9. The method of claim 5 wherein:
(i) at least one of the flowing streams has a velocity greater than or equal to 100 meterssecond prior to the impingement, and
(ii) the impingement produces a stream that has a velocity which is less than 10 meterssecond.
10. The method of claim 5 wherein the protein is a CPD glycosylase protein.