Author: claimsbot

1. A shutter for a UV module, said shutter rotating between an open position and a closed position and comprising a plurality of fins extending into a coolant passageway, said passageway conveying a liquid coolant flow, heat from the UV module transferred to said fins, then to said coolant flow.
2. The shutter of claim 1, wherein said coolant flow comprises water.
3. The shutter of claim 2, wherein said coolant flow further comprises polyethylene glycol.
4. The shutter of claim 1, wherein a plurality of coolant passageways are present.
5. The shutter of claim 1, further comprising a pair of reflector mounts.
6. A UV module comprising:
a pair of shutters, each of said shutters rotating between open and closed positions and defining at least one coolant passageway, a plurality of fins extending into said passageway from a fin base, said fin base including an interior shutter surface;
a pair of end caps attached to each of said shutters; and
a UV lamp disposed between said shutters,
said UV lamp generating heat and directing said generated heat toward said shutter interior surface, said heat being at least partially conducted from said fin base to said coolant passageway through said plurality of fins.
7. The UV module of claim 6, further comprising a coolant flowing in said passageway.
8. The UV module of claim 7, wherein said coolant comprises water.
9. The UV module of claim 8, wherein said coolant further comprises polyethylene glycol.
10. The UV module of claim 6, wherein a pair of coolant passageways are present in each of said shutters.
11. A method of manufacturing a rotatable shutter for a UV printing module, comprising: extruding a pair of shutters so that each shutter defines a plurality of fins extending into a longitudinal coolant passageway for conducting a liquid coolant therethrough.
12. The method of claim 11, in which a plurality of coolant passageways are defined.
13. The method of claim 11, in which the shutter includes an integral retainer.
14. The method of claim 13, further comprising attaching a positive or negative retainer to the shutter.
15. A method of manufacturing a LV module, comprising attaching a pair of rotatable shutters of claim 11 to a pair of end caps.
16. The method of claim 15, further comprising attaching a UV lamp to said UV module.
17. The method of claim 16, in which each of said shutters defines a plurality of coolant passageways.
18. A method of cooling a shutter extrusion, comprising flowing a liquid through a first coolant passageway, a plurality of fins extending into said first coolant passageway.
19. The method of claim 18, further comprising flowing a liquid through a second coolant passageway, a plurality of fines extending into said second coolant passageway.
20. The method of claim 18, wherein said liquid comprises water.
21. The method of claim 20, wherein said liquid further comprises polyethylene glycol.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A magnetic actor comprising:
two lateral parts that are arranged opposite each other with permanent magnets, wherein each lateral part comprises at least two permanent magnets with different directions of magnetization relative to each other; and
a coil that is arranged between the two lateral parts in such a way that the coil is movable relative to the two lateral parts, wherein a force is generated between the two lateral parts when the coil is triggered, and wherein the permanent magnets are held inside a slide-in frame.
2. The magnetic actor as claimed in claim 1 wherein the permanent magnets of the lateral parts are disposed in a Halbach configuration.
3. The magnetic actor as claimed in claim 1 wherein each of the two lateral parts comprises at least three permanent magnets that are disposed in a Halbach configuration.
4. The magnetic actor as claimed in claim 1 wherein each of the two lateral parts comprises at least two rows of magnets that are disposed in a Halbach configuration adjacent to each other.
5. The magnetic actor as claimed in claim 4 wherein the slide-in frame comprises a bar that is disposed between the rows.
6. The magnetic actor as claimed in claim 1 wherein the two lateral parts are connected with a plate respectively at two sides that are opposite each other.
7. The magnetic actor as claimed in claim 1 wherein the lateral parts comprise an immobilization plate that is connected with the slide-in frame.
8. The magnetic actor as claimed in claim 7 wherein the immobilization plate comprises clamping means for clamping the permanent magnets in place.
9. The magnetic actor as claimed in claim 1 wherein the slide-in frame comprises clamping means for clamping the permanent magnets in place.
10. The magnetic actor as claimed in claim 1 wherein the slide-in frame is open only on one side for insertion of a magnet.
11. The magnetic actor as claimed in claim 10 wherein the insertion height of the slide-in frame is smaller than the diagonal of the permanent magnets in a plane that extends in the direction of the insertion.
12. The magnetic actor as claimed in claim 1 wherein the slide-in frame comprises adjusting means for positioning the slide-in frame.
13. A vibration isolation system for vibration-isolated support of a lithography or wafer inspection device, comprising:
at least one bearing that is effective at least in a vertical andor horizontal direction; and
a magnetic actor as claimed in claim 1 that can be triggered for active vibration isolation.
14. The vibration isolation system as claimed in claim 13 characterized in that the coil is fastened on a vibration-isolated side of the vibration isolation system.
15. A method for assembling a magnetic actor, comprising:
inserting a plurality of magnets, one after the other, into a slide-in frame in a Halbach configuration; and
subsequent to the inserting, aligning the plurality of magnets relative to each other by way of clamping means.
16. The magnetic actor as claimed in claim 1 wherein each of the two lateral parts comprises five permanent magnets that are disposed in a Halbach configuration.
17. The magnetic actor as claimed in claim 7 wherein the immobilization plate comprises screws for clamping the permanent magnets in place.
18. The magnetic actor as claimed in claim 1 wherein the slide-in frame comprises screws for clamping the permanent magnets in place.
19. The magnetic actor as claimed in claim 1 wherein the slide-in frame comprises bore holes for an adjustment pin, for positioning the slide-in frame.

1. A magnetoresistive device, comprising:
a carrier;
an xMR-sensor formed on or in the carrier, the xMR-sensor based on an anisotropic magnetoresistance (AMR) effect, a giant magnetoresistance (GMR) effect, or a tunnel magnetoresistance (TMR) effect;
a hard magnetic layer distinct from the xMR-sensor and formed above an active xMR-region of the xMR-sensor; and
an insulating layer distinct from the xMR-sensor and arranged between the xMR-sensor and the hard magnetic layer,
wherein the hard magnetic layer is configured to provide a bias magnetic field in the active xMR-region of the xMR-sensor from a position above the xMR-sensor along the easy axis of the xMR-sensor, and
wherein a vertical distance between the xMR-sensor and the hard magnetic layer is smaller than a lateral dimension of the hard magnetic layer.
2. A method for manufacturing a magnetoresistive device, the method comprising:
providing an xMR-sensor on or in a carrier; and
forming a magnetic layer distinct from the xMR-sensor and above an active xMR-region of the xMR-sensor, wherein the magnetic layer and the xMR-sensor are integrated together to form an integrated circuit type device,
wherein the magnetic layer distinct from the xMR-sensor is configured to provide a bias magnetic field in the active xMR-region of the xMR-sensor from a position above the xMR-sensor along the easy axis of the xMR-sensor.
3. The method according to claim 2, further comprising:
arranging an insulating layer between the xMR-sensor and the magnetic layer, wherein the step of arranging the insulating layer is performed before forming the magnetic layer above the active xMR-region of the xMR-sensor.
4. The method according to claim 3, wherein arranging the insulating layer comprises depositing a dielectric layer having a thickness between 3 and 10 \u03bcm.
5. The method of claim 3, wherein a thickness of the insulating layer defines a vertical distance between the magnetic layer and the xMR-sensor, and wherein the vertical distance is smaller than a lateral dimension of the magnetic layer.
6. The method according to claim 2, wherein forming the magnetic layer comprises electrodepositing or sputtering the hard magnetic layer having a thickness of approximately 3 \u03bcm.
7. A method for manufacturing a magnetoresistive device, the method comprising:
providing an xMR-sensor on or in a carrier based on an anisotropic magnetoresistance (AMR) effect, a giant magnetoresistance (GMR) effect, or a tunnel magnetoresistance (TMR) effect;
forming a hard magnetic layer distinct from the xMR-sensor and above an active xMR-region of the xMR-sensor; and
arranging an insulating layer distinct from the xMR-sensor between the xMR-sensor and the hard magnetic layer,
wherein arranging the insulating layer is performed before forming the hard magnetic layer above the active xMR-region of the xMR-sensor, and
wherein the magnetic layer distinct from the xMR-sensor is configured to provide a bias magnetic field in the active xMR-region of the xMR-sensor from a position above the xMR-sensor along the easy axis of the xMR-sensor.
8. The method of claim 7, wherein the hard magnetic layer, the insulating layer and the xMR-sensor are integrated together to form an integrated circuit type device.
9. The method of claim 7, wherein a thickness of the insulating layer defines a vertical distance between the hard magnetic layer and the xMR-sensor, and wherein the vertical distance is smaller than a lateral dimension of the hard magnetic layer.
10. The magnetoresistive device of claim 1, wherein the magnetic layer comprises a hard magnetic layer, and wherein a magnetization direction of the hard magnetic layer is along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR- sensor.
11. The magnetoresistive device of claim 1, the hard magnetic layer having a magnetization direction along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR-sensor.
12. The method of claim 2, wherein the magnetic layer comprises a hard magnetic layer, and wherein a magnetization direction of the hard magnetic layer is along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR-sensor.
13. The method of claim 7, the hard magnetic layer having a magnetization direction along a direction of an easy axis of the xMR-sensor such that a bias magnetic field is generated from the hard magnetic layer in the active xMR-region of the xMR-sensor along the easy axis of the xMR-sensor.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A solar cell structure, comprising:
an n-type semiconductor layer;
an i-type semiconductor layer on the n-type semiconductor layer; and
a p-type semiconductor layer on the i-type semiconductor layer;
wherein the n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material.
2. The solar cell structure of claim 1, wherein the transparent conductive layer includes a combination of metal and at least one selected from the group consisting of oxygen (O), nitrogen (N), sulphur (S), selenium (Se), tellurium (Te) and combinations thereof.
3. The solar cell structure of claim 1, wherein the transparent conductive layer is a conductive metal oxide.
4. The solar cell structure of claim 1, wherein the transparent conductive layer includes a combination of metal and at least one non-metal selected from a Group 15 element, a Group 16 element and combinations thereof.
5. The solar cell structure of claim 1, wherein the transparent conductive layer include at least one selected from the group consisting of indium tin oxide (ITO), zinc oxide (ZnO), tin dioxide (SnO2) and combinations thereof.
6. The solar cell structure of claim 1, wherein the n-type semiconductor layer, the i-type semiconductor layer and the p-type semiconductor layer include at least one semiconductor material selected from the group consisting of silicon (Si), copper indium gallium selenide (CIGS), cadmium telluride (CdTe) and combinations thereof.
7. The solar cell structure of claim 1, wherein the n-type semiconductor layer, the i-type semiconductor layer and the p-type semiconductor layer are formed of a same semiconductor material.
8. The solar cell structure of claim 1, wherein n-type semiconductor layer, the i-type semiconductor layer and the p-type semiconductor layer are formed of different semiconductor materials.
9. The solar cell structure of claim 1, wherein the i-type semiconductor layer directly contacts the n-type semiconductor layer,
the p-type semiconductor layer directly contacts the i-type semiconductor layer, and
the n-type semiconductor layer and the p-type semiconductor layer directly contact the respective transparent conductive layer.
10. The solar cell structure of claim 1, wherein the transparent conductive layer contacting the n-type semiconductor layer is a first transparent conductive layer, the n-type semiconductor layer being on the first transparent conductive layer, and
the transparent conductive layer contacting the p-type semiconductor layer is a second transparent conductive layer on the p-type semiconductor layer.
11. The solar cell structure of claim 10, wherein the second transparent conductive layer includes a material having a greater amount of oxidation than the first transparent conductive layer.
12. The solar cell structure of claim 11, wherein the second transparent conductive layer is formed of ZnO and the first transparent conductive layer is formed of Zn2O3.
13. The solar cell structure of claim 10, wherein the second transparent conductive layer includes a material having a different amount of oxygen than the first transparent conductive layer.
14. The solar cell structure of claim 10, wherein the first transparent conductive layer and the second transparent conductive layer includes a combination of metal and at least one selected from the group consisting of O, N, S, Se, Te and combinations thereof.
15. The solar cell structure of claim 10, wherein the first transparent conductive layer and the second transparent conductive layer includes ITO, ZnO, SnO2 or combinations thereof.
16. The solar cell structure of claim 10, wherein the n-type semiconductor layer, the i-type semiconductor layer and the p-type semiconductor layer includes at least one selected from the group consisting of Si, CIGS, CdTe and combinations thereof.