Author: claimsbot

1. A method for preparing an enantiomerically pure (S)-1,1,1-trifluoro-2-propanol by an asymmetric hydrogenation of 1,1,1-trifluoroacetone comprising hydrogenating 1,1,1-trifluoroacetone in the presence of a ruthenium phosphine complex catalyst represented by formula
Ru(E)(E\u2032)(L)(A)

wherein E, E\u2032 are both chloro or E is hydrogen and E\u2032 is BH4;
L is a chiral diphosphine ligand; and
A is an optionally chiral diamine
wherein hydrogenation occurs
in the absence of a solvent and
a) in the presence of a weak base, with or without an additive, when E and E\u2032 are both chloro or
b) in the absence of a base and an additive when E and E\u2032 are hydrogen and BH4.
2. The method of claim 1, wherein the ruthenium phosphine complex catalyst is represented by formula
Ru(Cl)2(L)(A)

wherein
L is a chiral diphosphine ligand; and
A is an optionally chiral diamine
in the presence of a weak base, with or without an additive.
3. The method of claim 2, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 3, 3-1, 3-2, 3-3, 3-4, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is phenyl or phenyl substituted by one or more C1-7-alkyl, C1-7-alkoxy, phenyl, di-C1-7-alkylamino, N-morpholino or tri-C1-7-alkylsilyl group(s);
Z is N or C\u2014R3;
each R1 is independently hydrogen, C1-7-alkyl, cycloalkyl or aryl; or taken together form a \u2014(CH2)4-bridge;
R2 is C1-7-alkyl, C1-7-alkoxy, hydroxy or \u2014OC(O)\u2014C1-7-alkyl;
R3 and R4 are each independently hydrogen, C1-7-alkyl, C1-7-alkoxy, halogen or di-C1-7-alkylamino; or
R2 and R3 or R3 and R4 which are attached to the same phenyl group, or both R2 attached to different phenyl groups, taken together, are \u2014X\u2014(CH2)n\u2014Y\u2014; or \u2014X\u2014(CF2)\u2014X\u2014 wherein X is O or C(O)O, Y is O or N(C1-7-alkyl) and n is an integer from 1 to 6; or
R2 and R3 together with the carbon atoms to which they are attached, form a naphthyl or tetrahydronaphthyl ring; and
x is an integer from 1 to 6.
4. The method of claim 3, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 3, 3-1, 3-4, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is
R1 is phenyl; and
x is 2 or 3.
5. The method of claim 4, wherein the ruthenium phosphine complex catalyst is
Ar is
R1 is phenyl, and the optical isomers (R,R), (S,S), (rac) and (meso) thereof.
6. The method of claim 2, wherein the weak base is selected from the group consisting of ammonium, transition metal, alkali metal and alkali earth metal salts of HCOO\u2212, AcO\u2212, CF3COO\u2212, tBuCOO\u2212, HCO3\u2212 HSO4\u2212, SO42\u2212, HSO3\u2212, H2PO3\u2212, HPO32\u2212 and phenolates selected from the group consisting of 2,4-dinitrophenolate.
7. The method of claim 6, wherein the weak base is selected from the group consisting of ammonium, transition metal, alkali metal and alkali earth metal salts of HCOO\u2212 and HCO3\u2212.
8. The method of claim 2, wherein the weak base is present in an amount of 0.01-10 mol-% relative to 1,1,1-trifluoroacetone.
9. The method of claim 2, wherein the additives are water andor 1,1,1-trifluoro-2-propanol.
10. The method of claim 9, wherein the additive is present in an amount of 0.1-50 wt.-% relative to 1,1,1-trifluoroacetone.
11. The method of claim 2, wherein the substrate and catalyst are present in a substrate-to-catalyst molar ratio (SC) is 1,000-100,000.
12. The method of claim 11, wherein the substrate-to-catalyst molar ratio (SC) is 10,000-30,000.
13. The method of claim 2, wherein the process is carried out at a temperature between about 20 and 80\xb0 C.
14. The method of claim 13, wherein the process is carried out at a temperature between about 40 and 60\xb0 C.
15. The method of claim 2, wherein the process is carried out at a pressure between about 5\xd7105 and 100\xd7105 Pa of hydrogen.
16. The method of claim 15, wherein the process is carried out at a pressure between about 40\xd7105 and 80\xd7105 Pa of hydrogen.
17. The method of claim 2, which process comprises hydrogenating 1,1,1-trifluoroacetone in the presence of a ruthenium phosphine complex catalyst represented by formula
wherein
Ar is
R1 is phenyl in the presence of HCOONa in an amount of 0.04-0.5 mol-% relative to 1,1,1-trifluoroacetone and water in an amount of 1-3 wt-% relative to 1,1,1-trifluoroacetone, by a substrate-to-catalyst molar ratio (SC) of 10,000-30,000, at 40-60\xb0 C. and 40\xd7105-80\xd7105 Pa of hydrogen.
18. The method of claim 1 wherein the ruthenium phosphine complex catalyst is represented by formula
Ru(H)(BH4)(L)(A)

L is a chiral diphosphine ligand; and
A is an optionally chiral diamine
in the absence of a base and an additive.
19. The method of claim 18, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 4, 4-1, 4-2, 4-3, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is phenyl or phenyl substituted by one or more C1-7-alkyl, C1-7-alkoxy, phenyl, di-C1-7-alkylamino, N-morpholino or tri-C1-7-alkylsilyl group(s);
Z is N or C\u2014R3;
each R1 is independently hydrogen, C1-7-alkyl, cycloalkyl or aryl; or taken together form a \u2014(CH2)4-bridge;
R2 is C1-7-alkyl, C1-7-alkoxy, hydroxy or \u2014OC(O)\u2014C1-7-alkyl;
R3 and R4 are each independently hydrogen, C1-7-alkyl, C1-7-alkoxy, halogen or di-C1-7-alkylamino; or
R2 and R3 or R3 and R4 which are attached to the same phenyl group, or both R2 attached to different phenyl groups, taken together, are \u2014X\u2014(CH2)n\u2014Y\u2014; or \u2014X\u2014(CF2)\u2014X\u2014 wherein X is O or C(O)O, Y is O or N(C1-7-alkyl) and n is an integer from 1 to 6; and
x is an integer from 1 to 6.
20. The method of claim 19, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 4, 4-1, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is
R1 is phenyl; and
x is 2 or 3.
21. The method of claim 20, wherein the ruthenium phosphine complex catalyst is
Ar is
R1 is phenyl, including the optical isomers (R,R), (S,S), (rac) and (meso).
22. The method of claim 18, wherein the substrate and catalyst are present in a substrate-to-catalyst molar ratio (SC) is 1,000-50,000.
23. The method of claim 22, wherein the substrate-to-catalyst molar ratio (SC) is 2,000-20,000.
24. The method of claim 18, wherein the process is carried out at a temperature between about 20 and 80\xb0 C.
25. The method of claim 24, wherein the process is carried out at a temperature between about 40 and 60\xb0 C.
26. The method of claim 18, wherein the process is carried out at a pressure between about 5\xd7105 and 100\xd7105 Pa of hydrogen.
27. The method of claim 26, wherein the process is carried out at a pressure between about 40\xd7105 and 80\xd7105 Pa of hydrogen.
28. The method of claim 18, which process comprises hydrogenating 1,1,1-trifluoroacetone in the presence of a ruthenium phosphine complex catalyst represented by formula
wherein
Ar is
R1 is phenyl without a base or additive by a substrate-to-catalyst molar ratio (SC) of 2,000-20,000, at 40-60\xb0 C. and 40\xd7105-80\xd7105 Pa of hydrogen.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A signal processing module for wireless applications, comprising:
a liquid crystal polymer (LCP) layer having a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the LCP layer;
a second patterned metal layer on the second surface of the LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form a first resonator and a second resonator;
a first prepreg layer on the first metal layer opposite the LCP layer and a second prepreg layer on the second metal layer opposite the LCP layer; and
a first laminate layer on the first prepreg layer opposite the first metal layer, and a second laminate layer on the second prepreg layer opposite the second metal layer.
2. The module of claim 1, wherein the first resonator comprises a first inductor formed in the first patterned metal layer and a second inductor formed in the second patterned metal layer, wherein the first inductor is connected by a first microvia to the second inductor.
3. The module of claim 1, wherein the first resonator is magnetically coupled to the second resonator.
4. The module of claim 1, further comprising a third resonator formed in the first and second metal layers and electrically connecting the first resonator to the second resonator, wherein the third resonator provides a primary attenuation zero in a stopband.
5. The module of claim 1, wherein the first and second resonators comprise transmission line resonators.
6. The module of claim 1, wherein the first and second resonators comprise one or more of co-planar waveguide, stripline, and microstrip topologies.
7. The module of claim 1, further comprising a third metal layer on a first surface of the first laminate layer and patterned to form a first capacitor plate, and a fourth metal layer on a second surface of the first laminate layer opposite the first surface and patterned to form a second capacitor plate, wherein the first capacitor plate and second capacitor plate form a parallel plate capacitor.
8. The module of claim 1, farther comprising a first shielding layer on the first laminate layer opposite the first prepreg layer and a second shielding layer on the second laminate layer opposite the second prepreg layer.
9. The module of claim 1, wherein the integrated components include at least one of capacitors and inductors.
10. A diplexer for a multi-band wireless application, comprising:
a liquid crystal polymer (LCP) layer having a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the LCP layer;
a second patterned metal layer on the second surface of the LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form a first filter and a second filter connected by a common port;
a first prepreg layer on the first metal layer opposite the LCP layer, and a second prepreg layer on the second metal layer opposite the LCP layer; and
a first laminate layer on the first prepreg layer opposite the first metal layer, and a second laminate layer on the second prepreg layer opposite the second metal layer.
11. The diplexer of claim 10, wherein the first filter comprises a first inductor formed in the first patterned metal layer and a second inductor formed in the second patterned metal layer, wherein the first inductor is connected by a first microvia to the second inductor.
12. The diplexer of claim 10, wherein the first and second metal layers comprise one or more of co-planar waveguide, stripline, and microstrip topologies.
13. The diplexer of claim 10, further comprising a third metal layer on a first surface of the first laminate layer and patterned to form a first capacitor plate, and a fourth metal layer on a second surface of the first laminate layer opposite the first surface and patterned to form a second capacitor plate, wherein the first capacitor plate and second capacitor plate form a parallel plate capacitor.
14. The diplexer of claim 10, further comprising a first shielding layer on the first laminate layer opposite the first prepreg layer and a second shielding layer on the second laminate layer opposite the second prepreg layer.
15. The diplexer of claim 10, wherein the integrated components include at least one of capacitors and inductors.
16. A balun for a wireless application, comprising:
a high K organic layer having a a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the LCP layer;
a second metal patterned metal layer on the second surface of the LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form a first passive device and a second passive device;
a first prepreg layer on the first metal layer opposite the LCP layer, and a second prepreg layer on the second metal layer opposite the LCP layer; and
a first outer organic layer on the first prepreg layer opposite the first metal layer, and a second outer organic layer on the second prepreg layer opposite the second metal layer.
17. The balun of claim 16, wherein the first outer organic layer comprises one of a laminate layer, LCP layer or high K organic layer.
18. The balun of claim 16, wherein the first metal layer is patterned to form a first capacitor plate and the second metal layer is patterned to form a second capacitor plate, and further comprising a third metal layer on the first outer organic layer patterned to form a third capacitor plate, and wherein the first, second and third capacitor plates form a capacitor.
19. The balun of claim 16, wherein the integrated components include at least one of capacitors and inductors.
20. The balun of claim 16, further comprising a first shielding layer on the first outer organic layer opposite the first prepreg layer and a second shielding layer on the second outer organic layer opposite the second prepreg layer.
21. A signal processing module for multi-band wireless applications, comprising:
a first liquid crystal polymer (LCP) layer having a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the first LCP layer;
a second patterned metal layer on the second surface of the first LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form at least a first filter and a second filter connected by a common port;
a second LCP layer having a first surface and a second surface opposite the first surface;
a third patterned metal layer on the first surface of the second LCP layer;
a fourth patterned metal layer on the second surface of the second LCP layer, wherein the third and fourth metal layers are patterned to form integrated components such that the third and fourth metal layers interact with one another to form at least a first filter and a second filter connected by a common port;
a first prepreg layer disposed between the first and second LCP layers;
a second prepreg layer on the second metal layer opposite the first LCP layer, and a third prepreg layer on the third metal layer opposite the second LCP layer; and
a first outer organic layer on the second prepreg layer opposite the second metal layer, and a second outer organic layer on the third prepreg layer opposite the third metal layer.
22. The module of claim 21, further comprising a first shielding layer on the first outer organic layer opposite the second prepreg layer and a second shielding layer on the second outer organic layer opposite the third prepreg layer.
23. The module of claim 21, wherein the first outer organic layer comprises one of a laminate layer, LCP layer or high K organic layer.
24. The module of claim 21, further comprising a first RCF layer on first outer organic layer opposite the second prepreg layer; and
a second RCF layer on the second outer organic layer opposite the third prepreg layer.

What is claimed is:

1. A method of connecting a printed circuit having wiring formed on a printed circuit board, to a metal terminal, wherein the wiring is directly connected to the metal terminal by welding.
2. The method according to claim 1, wherein a low-fusion-point metal layer is formed on at least one of to-be-connected surfaces of the wiring and the metal terminal, and the wiring is welded to the metal terminal by melting the low-fusion-point metal layer.
3. The method according to claim 2, wherein a low-fusion-point metal layer is melted by resistance welding.
4. The method according to claim 1, wherein the welding is resistance welding.
5. The method according to claim 1, wherein the welding is ultrasonic welding.
6. The method according to claim 1, wherein the welding is laser welding.
7. The method according to claim 3, wherein two power supply terminal electrodes are used for resistance welding, the two power supply terminal electrodes being brought, during the resistance welding, into contact with those two portions of the metal terminal, which are separate by a predetermined distance and fall within an area in which the metal terminal overlaps the printed circuit.
8. The method according to claim 7, wherein the power supply terminal electrodes are tungsten electrodes or molybdenum electrodes.
9. The method according to claim 4, wherein two power supply terminal electrodes are used for resistance welding, the two power supply terminal electrodes being brought, during the resistance welding, into contact with those two portions of the metal terminal, which are separate by a predetermined distance and fall within an area in which the metal terminal overlaps the printed circuit.
10. The method according to claim 9, wherein the power supply terminal electrodes are tungsten electrodes or molybdenum electrodes.
11. The method according to claim 3, wherein two power supply terminal electrodes are used for resistance welding, one of the two power supply terminal electrodes being brought, during the resistance welding, into contact with that portion of the metal terminal, which falls within an area in which the metal terminal overlaps the printed circuit, and the other of the two power supply terminal electrodes being brought, during the resistance welding, into contact with the wiring of the printed circuit.
12. The method according to claim 11, wherein the power supply terminal electrodes are tungsten electrodes or molybdenum electrodes.
13. The method according to claim 4, wherein two power supply terminal electrodes are used for resistance welding, one of the two power supply terminal electrodes being brought, during the resistance welding, into contact with that portion of the metal terminal, which falls within an area in which the metal terminal overlaps the printed circuit, and the other of the two power supply terminal electrodes being brought, during the resistance welding, into the wiring of the printed circuit.
14. The method according to claim 13, wherein the power supply terminal electrodes are tungsten electrodes or molybdenum electrodes.
15. The method according to claim 1, wherein the metal terminal is a first terminal attachment to be engaged with a second terminal attachment provided at an end portion of an electrical wire or another printed circuit to be connected to the first-mentioned printed circuit.
16. The method according to claim 2, wherein the metal terminal is a first terminal attachment to be engaged with a second terminal attachment provided at an end portion of an electrical wire or another printed circuit to be connected to the first-mentioned printed circuit.
17. A method of reinforcing a junction between a flexible printed circuit having a conductive pattern formed on an insulating film, and a metal connection terminal having a connection plate end portion connected to the conductive pattern at an end portion of the flexible printed circuit, comprising the steps of:
directly connecting the connection plate end portion of the metal connection terminal to the conductive pattern at the end of the flexible printed circuit by a method selected from the group consisting of resistance welding, ultrasonic welding and laser welding; and
sealing a resultant junction between the connection plate end portion and the conductive pattern with a resin mold section, the resin mold section being tapered such that a thickness thereof gradually reduces from a connection terminal side to a flexible printed circuit side.
18. The method according to claim 17, wherein in the step of sealing the junction, the resin mold section is made of a polyamide-based hot melt resin.
19. The method according to claim 17, wherein in the step of sealing the junction, the resin mold section is made of a polyurethane-based hot melt resin.
20. The method according to claim 17, wherein in the step of sealing the junction, the resin mold section is made of a polyolefin-based hot melt resin.
21. The method according to claim 17, wherein in the step of sealing the junction, the resin mold section is made of a polyester-based hot melt resin.
22. A structure in which a first terminal attachment is connected to a printed circuit having wiring formed on a printed circuit board, the first terminal attachment being arranged to be engaged with an electrical wire or another printed circuit,
wherein:
the first terminal attachment includes a receiving section for receiving a second terminal attachment provided at an end portion of the electrical wire or said another printed circuit, and a flat plate section continuously extending from the receiving section, the flat plate section being directly connected to the wiring of the printed circuit by one of resistance welding, ultrasonic welding and laser welding.
23. A junction structure between a flexible printed circuit and a connection terminal, comprising:
a flexible printed circuit having a conductive pattern formed on an insulating film;
a metal connection terminal having a connection plate end portion directly connected to the conductive pattern at an end portion of the flexible printed circuit by one of resistance welding, ultrasonic welding and laser welding; and
a resin mold section sealing a junction between the flexible printed circuit and the metal connection terminal, the resin mold section being tapered such that a thickness thereof gradually reduces from a connection terminal side to a flexible printed circuit side.
24. The junction structure according to claim 23, wherein the resin mold section is made of a polyamide-based hot melt resin.
25. The junction structure according to claim 23, wherein the resin mold section is made of a polyurethane-based hot melt resin.
26. The junction structure according to claim 23, wherein the resin mold section is made of a polyolefin-based hot melt resin.
27. The junction structure according to claim 23, wherein the resin mold section is made of a polyester-based hot melt resin.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

We claim:

1. A method of decoding received data block, said method comprising:
receiving a symbol block of at least one data symbol, wherein each data symbol corresponds to an encoded data bit;
padding the symbol block with at least one padding symbol; and
decoding the padded symbol block using a decoder.
2. The method of claim 1, wherein
the receiving step receives the symbol block and places the symbol block into a buffer; and
the padding step pads the symbol block by placing at least one padding symbol into the buffer before the symbol block.
3. The method of claim 1, wherein
the receiving step receives the symbol block and places the symbol block into a buffer; and
the padding step pads the symbol block by placing at least one padding symbol into the buffer after the symbol.
4. The method of claim 1, wherein
the receiving step receives the symbol block and places the symbol block into a buffer; and
the padding step pads the symbol block by placing at least one padding symbol into the buffer in between at least two symbols in symbol block.
5. The method of claim 1, the padding symbol substantially represents zero, and negative infinity.
6. The method of claim 1, further comprising
providing a plurality of padded interleaver tables including one first entry associated with each data symbol in the symbol block and one second entry associated with each padding symbol,
wherein a first padded interleaver table of the plurality of padded interleaver tables has a first number of first entries, a second padded interleaver of the plurality of padded interleaver tables has a second number of first entries, and
the decoding step includes sending the padded symbol block with N data symbols and the padded interleaver table with D first entries to the decoder, where ND.
7. A method of decoding data comprising:
receiving a block of data symbols wherein the block includes at least one data symbol and each data symbol represents an encoded data bit;
determining if the block data symbols has a number of data symbols equal to a threshold value M;
if the number of data symbols is less than M, padding the block of data symbols with at least one padding symbol; and
decoding the padded block of data symbols.
8. The method of claim 7, wherein
the determining step counts the data symbols in the block of data symbols and compares the counted number to the threshold value M.
9. The method of claim 7, wherein
the receiving step receives the block of data symbols and places the data symbols into a buffer; and
the padding step pads the block of data symbols by placing at least one padding symbol into the buffer before the block data symbols.
10. The method of claim 7, wherein
the receiving step receives the block of data symbols and places the data symbols into a buffer; and
the padding step pads the block of data symbols by placing padding symbols into the buffer after the block data symbols.
11. The method of claim 7, wherein
the receiving step receives the block of data symbols and places the data symbols into a buffer; and
the padding step pads the block of data symbols by placing padding symbols into the buffer in between at least two data symbols in the block of data symbols.
12. The method of claim 7, wherein the padding bits substantially represent zero and negative infinity.
13. The method of claim 7, further comprising
providing a plurality of padded interleaver tables including a number of first entries D including a first entry associated with each data symbol and a second entry associated with each padding symbol,
wherein a first padded interleaver table of the plurality of padded interleaver tables has a first number of first entries,
a second padded interleaver of the plurality of padded interleaver tables has a second number of first entries,
the number of data symbols in the block of data symbols is N, and
if the number of data symbols N is less than M, the decoding step includes sending the padded block of data symbols with N data symbols and the padded interleaver table with D decoding symbols to the decoder, where ND.
14. A decoding system comprising:
a buffer for receiving a symbol block wherein the symbol block has at least one symbol and each symbol represents an encoded data bit;
an interleaver unit containing a plurality of padded interleaver tables;
a padding unit for creating padded symbol blocks by adding padding symbols to the buffer containing the symbol block; and
a decoder for decoding the padded symbol blocks.
15. The decoding system of claim 14, wherein
the decoder is a turbo decoder including at least two decoder units connected in series, and
a first decoder unit receives and processes the padded symbol block and generates a first output and a second decoder receives and processes the first output and generates a second output including decoded data.
16. The decoding system of claim 14, further comprising:
a counter for counting a number of data symbols N in the symbol block,
a comparing unit for comparing N to a threshold number M of symbols required for operation of the decoder;
wherein the padding unit places padding symbols into the buffer, if the comparing unit indicates N is less than M.
17. The decoding system of claim 14, wherein
the padding unit places padding symbols into the buffer before the symbol block, after the symbol block, or in between two symbols in the symbol block.
18. The decoding system of claim 14, wherein
the padding symbols substantially represent zero and negative infinity.
19. The decoding system of claim 14, wherein
the interleaver unit includes a first padded interleaver table of the plurality of padded interleaver tables having a first number of first entries D associated with the data symbols and a second number of second entries associated with the padding symbols, and
a second padded interleaver of a plurality of padded interleaver tables having a third number of first entries D associated with the data symbols and a fourth number of second entries associated with the padding symbols.
20. The decoding system of claim 14, wherein
each padded interleaver table of the plurality of padded interleaver tables has a first number of first entries D associated with the data symbols and a second number of second entries associated with the padding symbols,
the symbol block has a third number of data symbols N, and
the decoder performs decoding using the padded symbol block and a padded interleaver table, where ND.