1. A Value Added Services (VAS) system of Wireless Local Area Network (WLAN), applicable in a wireless mobile communication device, for allowing a user to use a plurality of VAS provided by a wireless mobile communication provider through the wireless mobile communication device, the VAS system comprising:
a WLAN for receiving and confirming connecting information outputted from the wireless mobile communication device by the user, and outputting connection-permission information after being connected to the wireless mobile communication device; and
a workstation for receiving the connection-permission information from the WLAN and providing the plurality of VAS to the user through the WLAN.
2. The VAS system of claim 1, wherein the workstation comprises:
a communication protocol related server for receiving the connection-permission information from the WLAN and outputting the received connection-permission information;
a network server for receiving the connection-permission information outputted from the communication protocol related server and outputting login-permission information after the connection-permission information is verified by a verifying mechanism;
a VAS server for receiving the login-permission information outputted from the network server and transmitting VAS information provided by the VAS server back to the wireless mobile communication device of the user through the WLAN; and
a database server for storing related data of the VAS information provided by the VAS server.
3. The VAS system of claim 2, wherein the communication protocol related server is a Wireless Application Protocol (WAP) related server.
4. The VAS system of claim 2, wherein the network server is a WLAN server.
5. The VAS system of claim 2, wherein the verifying mechanism is provided for the user to input related data to use the VAS.
6. The VAS system of claim 5, wherein the related data inputted by the user include a set of user name and password.
7. The VAS system of claim 5, wherein the related data inputted by the user are provided by the wireless mobile communication provider.
8. The VAS system of claim 2, wherein the VAS server is one of a value added application server, a positioning server and a combination thereof.
9. The VAS system of claim 8, wherein the positioning server is for determining a location of the wireless mobile communication device according to an Internet Protocol (IP) address of the wireless mobile communication device.
10. The VAS system of claim 9, wherein the IP address is configured by a Dynamic Host Configuration Protocol (DHCP) of the WLAN.
11. A method for providing Value Added Services (VAS) of Wireless Local Area Network (WLAN), applied in a wireless mobile communication device, for allowing a user to use a plurality of VAS provided by a wireless mobile communication provider through the wireless mobile communication device, the method comprising the steps of:
outputting connecting information to a WLAN through the wireless mobile communication device by the user;
after confirming the connecting information, having the WLAN be connected to the wireless mobile communication device and output connection-permission information; and
having a workstation receive the connection-permission information from the WLAN and provide a plurality of VAS to the user through the WLAN.
12. The method of claim 11, wherein the workstation comprises:
a communication protocol related server for receiving the connection-permission information from the WLAN and outputting the received connection-permission information;
a network server for receiving the connection-permission information outputted from the communication protocol related server and outputting login-permission information after the connection-permission information is verified by a verifying mechanism;
a VAS server for receiving the login-permission information outputted from the network server and transmitting VAS information provided by the VAS server back to the wireless mobile communication device of the user through the WLAN; and
a database server for storing related data of the VAS information provided by the VAS server.
13. The method of claim 12, wherein the communication protocol related server is a WAP related server.
14. The method of claim 12, wherein the network server is a WLAN server.
15. The method of claim 12, wherein the verifying mechanism is provided for the user to input related data to use the VAS.
16. The method of claim 15, wherein the related data inputted by the user include a set of user name and password.
17. The method of claim 15, wherein the related data inputted by the user are provided by the wireless mobile communication provider.
18. The method of claim 12, wherein the VAS server is one of a value added application server, a positioning server and a combination thereof.
19. The method of claim 18, wherein the positioning server is for determining a location of the wireless mobile communication device according to an Internet Protocol (IP) address of the wireless mobile communication device.
20. The method of claim 19, wherein the IP address is configured by a Dynamic Host Configuration Protocol (DHCP) of the WLAN.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method, comprising:
forming a gate dielectric layer above a semiconducting substrate;
forming a gate electrode layer above said gate dielectric layer;
implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer; and
patterning at least said gate electrode layer to define a gate electrode comprised of a plurality of sidewalls, said sidewalls having a recess formed therein.
2. The method of claim 1, wherein forming a gate dielectric layer above a semiconducting substrate comprises forming a gate dielectric layer comprised of at least one of silicon dioxide and silicon oxynitride above a semiconducting substrate.
3. The method of claim 1, wherein forming a gate dielectric layer above a semiconducting substrate comprises thermally growing a gate dielectric layer comprised of silicon dioxide above a semiconducting substrate.
4. The method of claim 1, wherein forming a gate electrode layer above said gate dielectric layer comprises depositing a gate electrode layer above said gate dielectric layer.
5. The method of claim 1, wherein forming a gate electrode layer above said gate dielectric layer comprises forming a gate electrode layer comprised of at least one of polysilicon and amorphous silicon above said gate dielectric layer.
6. The method of claim 1, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms comprised of at least one of boron, phosphorous, arsenic, nitrogen, antimony, and indium into said gate electrode layer to define a layer of dopant material in said gate electrode layer.
7. The method of claim 1, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer, said layer of dopant material being completely separate from said gate dielectric layer.
8. The method of claim 1, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer, said layer of dopant material defining a region of said gate electrode layer that is positioned between said layer of dopant material and said gate dielectric layer.
9. The method of claim 1, wherein, implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer, at least a portion of said layer of dopant material being in contact with said gate dielectric layer.
10. The method of claim 1, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms at a concentration ranging from approximately 5\xd71014-5\xd71015 atomscm2 into said gate electrode layer to define a layer of dopant material in said gate electrode layer.
11. The method of claim 1, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms at an energy level ranging from approximately 20-500 keV into said gate electrode layer to define a layer of dopant material in said gate electrode layer.
12. The method of claim 1, wherein patterning at least said gate electrode layer to define a gate electrode comprised of a plurality of sidewalls, said sidewalls having a recess formed therein, comprises etching at least said gate electrode layer to define a gate electrode comprised of a plurality of sidewalls, said sidewalls having a recess formed therein.
13. The method of claim 1, wherein patterning at least said gate electrode layer to define a gate electrode comprised of a plurality of sidewalls, said sidewalls having a recess formed therein, comprises performing an anisotropic etching process to pattern at least said gate electrode layer to define a gate electrode comprised of a plurality of sidewalls, said sidewalls having a recess formed therein.
14. A method, comprising:
thermally growing a gate dielectric layer comprised of silicon dioxide above a semiconducting substrate;
depositing a gate electrode layer comprised of polysilicon above said gate dielectric layer;
implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer; and
performing an anisotropic etching process to pattern at least said gate electrode layer to define a gate electrode comprised of a plurality of sidewalls, said sidewalls having a recess formed therein.
15. The method of claim 14, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms comprised of at least one of boron, phosphorous, arsenic, nitrogen, antimony, and indium into said gate electrode layer to define a layer of dopant material in said gate electrode layer.
16. The method of claim 14, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer, said layer of dopant material being completely separate from said gate dielectric layer.
17. The method of claim 14, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer, said layer of dopant material defining a region of said gate electrode layer that is positioned between said layer of dopant material and said gate dielectric layer.
18. The method of claim 14, wherein, implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer, at least a portion of said layer of dopant material being in contact with said gate dielectric layer.
19. The method of claim 14, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms at a concentration ranging from approximately 5\xd71014-5\xd71015 atomscm2 into said gate electrode layer to define a layer of dopant material in said gate electrode layer.
20. The method of claim 14, wherein implanting dopant atoms into said gate electrode layer to define a layer of dopant material in said gate electrode layer comprises implanting dopant atoms at an energy level ranging from approximately 20-50 keV into said gate electrode layer to define a layer of dopant material in said gate electrode layer.