Author: claimsbot

1. An air shutter to be installed in front of a doorway where temperature difference exists between the inside and outside thereof in order to interrupt the flowage of air through the doorway to interrupt the flowage of air through the doorway, wherein a pair of gateposts is installed of which each gatepost is provided at each side of the doorway to oppose to each other, a duct for air passage being formed in each gatepost, each gatepost being provided with air spouting out openings and air sucking openings along the direction of height such that each of the air spouting out openings of one side gatepost faces, or is opposite to, each of the air sucking openings of the other side gatepost respectively, a plurality of fans being provided behind each of said air spouting out openings; one of the gatepost is provided with the air spouting openings and fans located in the upper part and in the lower part thereof; the other of the gatepost is provided with the air spouting openings and fans located in the middle part in the direction of height thereof; and air is spouted out from the air spouting openings toward the corresponding opposite air sucking openings.
2. The air shutter according to claim 1, wherein the fans located in the middle part are divided into two groups, and each group of fans sucks air through each passage divided into two by a partition member for dividing the duct inside the other side gatepost.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A semiconductor device comprising:
a plurality of heat dissipating paths, each for each of a pre-set number of terminals of an active element, said heat dissipating paths being adapted for transmitting heat from the terminals of said active element to a heat sink member, wherein
said pre-set number of terminals being constructed so as not being electrically connected to one another by said heat radiating paths and said heat sink members.
2. The semiconductor device as defined in claim 1 wherein, in at least one of the heat dissipating paths, there is inserted in a path reaching said heat sink member a member exhibiting good thermal conductivity and electrically insulating properties,termed as an insulating member.
3. A semiconductor device wherein a first terminal of the active element is connected via an electrically conductive member to a heat sink member, and wherein a second terminal of the active element transmits heat to said heat sink member via at least an insulating member interposed in-between.
4. The semiconductor device as defined in claim 1 wherein said heat sink member is a heat sink member of a package mounting the active element.
5. The semiconductor device as defined in claim 2 wherein said heat sink member is a heat sink member of a package mounting the active element.
6. The semiconductor device as defined in claim 3 wherein said heat sink member is a heat sink member of a package mounting the active element.
7. A semiconductor device wherein an electrode of an active element formed on a substrate, termed as a first electrode, is connected to an electrically conductive member, and at least one of the other electrodes of the active element, termed as a second electrode, is connected to said electrically conductive member via an insulating member, said electrically conductive member abutting to a heat sink member of a package.
8. The semiconductor device as defined in claim 7 wherein said active element is comprised of a field, effect transistor FET, and wherein said first and second electrodes are a source electrode and a drain electrode, respectively.
9. A semiconductor device wherein at least one terminal of an active element is connected via an insulating member to a heat sink member of a package used for mounting the active element.
10. The semi conductor device as defined in claim 9 wherein said insulating member is arranged on at least one of (a) a terminal surface of said active element andor (b) a heat sink member side of the package used for mounting the active element.
11. The semiconductor device as defined in claim 2 wherein the insulating member comprises aluminum nitride.
12. A method for producing a semiconductor device in which an active element formed on a substrate is connected to a heat sink member of a package accommodating said active element, comprising the steps of:
(a) forming a gate electrode on said substrate;
(b) forming a fi rst insulating film having holes provided in the substrate at position of a drain electrode and a source electrode respectively;
(c) forming said drain electrode and said source electrode on said substrate;
(d) forming a second insulating film on the entire surface of said substrate and planarizing the surface until said drain electrode and the source electrode are exposed;
(e) forming an insulating member on said drain electrode;
(f) forming on said substrate a third insulating film having a hole provided at the position of the source electrode and planarizing the surface until the surface of said insulating member of said drain electrode is exposed; and
(g) forming an electrically conductive member on said third insulating film.
13. A method for producing a semiconductor device in which an active element formed on a substrate is connected to a heat sink member of a package accommodating said active element, comprising the steps of:
(a) forming a gate electrode on said substrate;
(b) forming a first insulating film having holes provided in the substrate at positions of a drain electrode and a source electrode, respectively;
(c) forming said drain electrode and the source electrode on said substrate;
(d) forming a second insulating film on the entire surface of the substrate and planarizing the surface until the drain electrode and the source electrode are exposed;
(e) forming an insulating member on said drain electrode;
(f) forming a metal protuberance on said package in register with the source electrode of said active element; and
(g) bonding said active element and the package so that said source electrode of said active element and the metal protuberance of the package face each other.
14. A method for producing a semiconductor device in which an active element formed on a substrate is connected to a heat sink member of a package accommodating said active element, comprising the steps of:
(a) forming a gate electrode on said substrate;
(b) forming a first insulating film having holes provided in the substrate at positions of a drain electrode and a source electrode respectively;
(c) forming said drain electrode and said source electrode on said substrate;
(d) providing on said package an insulating member at a position facing the drain electrode of said active element;
(e) providing a metal protuberance on said package in register with the source electrode of said active element;
(f) bonding said active element and the package so that said source electrode of said active element and the metal protuberance of said package face each other and so that the drain electrode and the insulating member of said package face each other.
15. The method for producing a semiconductor device as defined in claim 12 wherein said insulating member comprises aluminum nitride.
16. The method for producing a semiconductor device as defined in claim 13 wherein said insulating member comprises aluminum nitride.
17. The method for producing a semiconductor device as defined in claim 14 wherein said insulating member comprises aluminum nitride.
18. The method for producing a semiconductor device as defined in claim 12 wherein said active element is a high-output-power FET formed on a GaAs substrate and wherein said insulating member comprises aluminum nitride.
19. The method for producing a semiconductor device as defined in claim 13 wherein said active element is a high-output-power FET formed on a GaAs substrate and wherein said insulating member comprises aluminum nitride.
20. The method for producing a semiconductor device as defined in claim 14 wherein said active element is a high-output-power FET formed on a GaAs substrate and wherein said insulating member comprises aluminum nitride.

1. A disk drive comprising:
a head configured to read servo data on a disk at sampling frequency;
a moving mechanism configured to hold and to move said head in proximity with a recording surface of said disk;
a first peak filter with a fixed peak frequency and a variable gain configured to be inserted into a servo loop, said servo loop configured to position said head with position error signals between servo data read by said head and a target position;
an adaptive peak filter with a variable peak frequency and a variable gain configured to be inserted into said servo loop; and
a filter controller configured to control said gain of said adaptive peak filter according to said gain of said first peak filter.
2. The disk drive of claim 1, wherein said filter controller is configured to determine a maximum acceptable gain of said adaptive peak filter according to said gain of said first peak filter.
3. The disk drive of claim 1, wherein said filter controller is configured to determine, according to external vibrations, an operation selected from the group consisting of enabling said first peak filter, disabling said first peak filter, enabling said adaptive peak filter, and disabling said adaptive peak filter.
4. The disk drive of claim 3, wherein said filter controller is configured to determine, according to position error signals changing with external vibrations, an operation selected from the group consisting of enabling said first peak filter, and disabling said first peak filter.
5. The disk drive of claim 1, further comprising:
a second peak filter with a peak frequency higher than said peak frequency of said first peak filter, said second peak filter having a fixed peak frequency and a variable gain; and
a monitor peak filter with a peak frequency lower than said peak frequency of said first peak filter, said monitor peak filter configured to monitor external vibrations;
wherein said filter controller is configured to control said gain of said second peak filter according to output of said monitor peak filter.
6. The disk drive of claim 5, wherein said filter controller is configured to disable said second peak filter if said output of said monitor peak filter is over a specified value.
7. The disk drive of claim 1, further comprising:
a second peak filter with a peak frequency higher than said peak frequency of said first peak filter, said second peak filter having a fixed peak frequency and a variable gain;
wherein said filter controller is configured to control said adaptive peak filter independently of said second peak filter.
8. The disk drive of claim 1, wherein said disk drive is configured to change a data-write permissiondenial condition according to a gain selected from the group consisting of said gain of said first peak filter, and said gain of said adaptive peak filter.
9. A method for positioning a head with position error signals between servo data read by said head and a target position, said method comprising:
determining a variable gain on a servo loop and an operation selected from the group consisting of enabling a first peak filter with a fixed peak frequency, and disabling said first peak filter with said fixed peak frequency;
determining said variable gain on said servo loop and an operation selected from the group consisting of enabling a adaptive peak filter with a variable peak frequency, and disabling said adaptive peak filter with said variable peak frequency; and
controlling said gain of said adaptive peak filter according to said gain of said first peak filter if enabling both said first peak filter and said adaptive peak filter on said servo loop.
10. The method of claim 9, further comprising:
determining a maximum acceptable gain of said adaptive peak filter according to said gain of said first peak filter.
11. The method of claim 9, further comprising:
determining, according to output of said first peak filter, an operation selected from the group consisting of enabling said first peak filter, and disabling said first peak filter.
12. The method of claim 9, further comprising:
determining, according to output of a monitor peak filter with a peak frequency lower than said peak frequency of said first peak filter for monitoring external vibrations, said variable gain on said servo loop; and
determining an operation selected from the group consisting of enabling a second peak filter with a fixed peak frequency higher than said peak frequency of said first peak filter, and disabling said second peak filter with said fixed peak frequency higher than said peak frequency of said first peak filter.
13. The method of claim 12, further comprising:
disabling said second peak filter if said output of said monitor peak filter is over a specified value.
14. The method of claim 9, further comprising:
determining said variable gain on said servo loop and an operation selected from the group consisting of enabling a second peak filter with a fixed peak frequency higher than said peak frequency of said first peak filter, and disabling said second peak filter with said fixed peak frequency higher than said peak frequency of said first peak filter; and
controlling said adaptive peak filter independently of said second peak filter.
15. The method of claim 9, further comprising:
changing a data-write permissiondenial condition according to a gain selected from the group consisting of a gain of said first peak filter, and a gain of said adaptive peak filter.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A pyrimidine azo compound represented by the following formula (I), or a tautomer thereof:
wherein in the formula (I), R1 represents a heterocyclic group; R2 represents a hydrogen atom or a substituent; R3, R4, R5, R6, R7, and R8 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, an alkylsulphonyl group, an arylsulphonyl group, or a sulfamoyl group; and R3 and R4, R5 and R6, and R7 and R8 may be mutually bonded to form a 5-, 6-, or 7-membered ring.
2. A colored curable composition comprising a dye represented by the following formula (V):
wherein, in the formula (V), R1 represents a heterocyclic group; R2 represents a hydrogen atom or a substituent; X1 represents \u2014N\u2550, or \u2014C(R3)\u2550; R3 represents a hydrogen atom or a substituent; when X1 is \u2014C(R3)\u2550, R2 and R3 may be mutually bonded to form a 5-, 6-, or 7-membered ring; R4 represents a hydrogen atom or a substituent; R5 and R6 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, an alkylsulphonyl group, an arylsulphonyl group, or a sulfamoyl group; R5 and R6 may be mutually bonded to form a 5-, 6-, or 7-membered ring; and R7 represents a hydrogen atom or a substituent.
3. A colored curable composition according to claim 2 further comprising a polymerizable monomer.
4. A colored curable composition according to claim 3, wherein the polymerizable monomer contains a (meta)acrylic ester monomer.
5. A colored curable composition according to claim 4, wherein the polymerizable monomer contains a tri- or higher-functional (meta)acrylic ester monomer.
6. A colored curable composition according to claim 2 further comprising a binder.
7. A colored curable composition according to claim 6, wherein the binder contains an alkali-soluble (meta)acrylic resin.
8. A colored curable composition according to claim 7, wherein the binder contains a (meta)acrylic resin having an alkali-soluble polymerizable side chain.
9. A colored curable composition according to claim 2 further comprising a photopolymerization initiator.
10. A colored curable composition according to claim 9; wherein the photopolymerization initiator contains at least one active halogen compound selected from a halomethyloxadiazole compound and a halomethyl-s-triazine compound, and at least one compound selected from the group consisting of a 3-aryl substituted coumarin compound, a lophine dimmer, a benzophenon compound, an acetophenon compound and derivatives thereof, a cyclopentadiene-benzene-iron complex and salts thereof, and an oxime compound.
11. A colored curable composition according to claim 9, wherein the photopolymerization initiator contains at least one compound that does not generate acids by decomposition.
12. A colored curable composition according to claim 9, wherein the photopolymerization initiator contains at least one compound selected from the group consisting of a lophine dimmer, a benzophenon compound, an acetophenon compound, an oxime compound, and a halomethyl-s-triazine compound.
13. A colored curable composition according to claim 2 further comprising a cross linking agent.
14. A color filter comprising a color layer containing at least one colored curable composition of claim 2.
15. A method of manufacturing a color filter, comprising:
coating the colored curable composition of claim 2 on a substrate, so as to form a color layer;
pattern exposing the color layer to light through a mask; and
developing the color layer to form a colored pattern.
16. A colored curable composition comprising a dye represented by the following formula (II):
wherein, in the formula (II), R1 represents a heterocyclic group; R2 represents a hydrogen atom or a substituent; R5 and R6 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, an alkylsulphonyl group, an arylsulphonyl group, or a sulfamoyl group; R5 and R6 may be mutually bonded to form a 5-, 6-, or 7-membered ring; R8, R9, R10, and R11 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, an alkylsulphonyl group, an arylsulphonyl group, or a sulfamoyl group; and R5 and R6, R8 and R9, and R10 and R11 may be mutually bonded to form a 5-, 6-, or 7-membered ring.