1. A computer-implemented method for determining whether an electronic check image is suitable for image quality analysis, comprising the steps of:
reading, by a computer, an electronic check image comprising a plurality of tags;
determining, by the computer, whether the plurality of tags meet a tag standard;
in response to determining that the plurality of tags do not meet the tag standard, determining, by the computer, that the electronic check image is not suitable for image quality analysis;
in response to determining that the plurality of tags meet the tag standard, determining, by the computer, that the electronic check image is suitable for image quality analysis and performing an image quality analysis on the electronic check image to produce an image quality value;
determining, by the computer, an intended purpose of the electronic check image;
reading, by the computer, an image quality threshold based on the intended purpose of the electronic check image;
comparing, by the computer, the image quality threshold with the image quality value;
in response to determining that the image quality value does not meet the image quality threshold, performing, by the computer, an image usability analysis on the electronic check image and reading an image confidence score based on the image usability analysis; and
creating, by the computer, an image composite score based on the image confidence score and the image quality value.
2. The method according to claim 1, wherein the step of determining whether the plurality of tags meet the tag standard comprises the steps of:
determining, by the computer, whether the plurality of tags comprise a predetermined selection of at least one mandatory tag; and
in response to determining that the plurality of tags do not comprise the predetermined selection of at least one mandatory tag, determining, by the computer, that the plurality of tags do not meet the tag standard.
3. A computer-implemented method for determining whether an electronic check image is suitable for image quality analysis, comprising the steps of:
reading, by a computer, an electronic check image comprising a plurality of tags;
determining, by the computer, whether the plurality of tags meet a tag standard; and
in response to determining that the plurality of tags do not meet the tag standard, determining, by the computer, that the electronic check image is not suitable for image quality analysis, wherein determining whether the plurality of tags meet the tag standard comprises
determining, by the computer, whether the plurality of tags comprise any optional tags;
in response to determining that the plurality of tags comprise any optional tags, determining, by the computer, whether any optional tag in the plurality of tags is invalid; and
in response to determining that any optional tag in the plurality of tags is invalid, determining, by the computer, that the plurality of tags do not meet the tag standard.
4. The method according to claim 3, further comprising the step of:
in response to determining that no optional tag in the plurality of tags is invalid, determining, by the computer, that the plurality of tags meet the tag standard.
5. The method according to claim 1, wherein the step of determining that the electronic check image is not suitable for image quality analysis further comprises the step of assigning, by the computer, a failure value to the electronic check image.
6. The method according to claim 5, further comprising the step of reporting, by the computer, the failure value to an entity that created the electronic check image.
7. The method according to claim 5, further comprising the step of storing, by the computer, the failure value in a database.
8. A computer-implemented method for determining whether an electronic check image is suitable for image quality analysis, comprising the steps of:
reading, by a computer, an electronic check image comprising a plurality of tags;
determining, by the computer, whether the plurality of tags comprise a predetermined selection of at least one mandatory tag;
in response to determining that the plurality of tags do not comprise the predetermined selection of at least one mandatory tag, determining, by the computer, that the electronic check image is not suitable for image quality analysis;
in response to determining that the plurality of tags comprise the predetermined selection of at least one mandatory tag, determining, by the computer, that the electronic check image is suitable for image quality analysis and performing an image quality analysis on the electronic check image to produce an image quality value;
determining, by the computer, an intended purpose of the electronic check image;
reading, by the computer, an image quality threshold based on the intended purpose of the electronic check image;
comparing, by the computer, the image quality threshold with the image quality value;
in response to determining that the image quality value does not meet the image quality threshold, performing, by the computer, an image usability analysis on the electronic check image and reading an image confidence score based on the image usability analysis; and
creating, by the computer, an image composite score based on the image confidence score and the image quality value.
9. A computer-implemented method for determining whether an electronic check image is suitable for image quality analysis, comprising the steps of:
reading, by a computer, an electronic check image comprising a plurality of tags;
determining, by the computer, whether the plurality of tags comprise a predetermined selection of at least one mandatory tag;
in response to determining that the plurality of tags do not comprise the predetermined selection of at least one mandatory tag, determining, by the computer, that the electronic check image is not suitable for image quality analysis;
in response to determining that the plurality of tags comprise the predetermined selection of at least one mandatory tag, determining, by the computer, whether the plurality of tags comprise any optional tags;
in response to determining that the plurality of tags comprise any optional tags, determining, by the computer, whether any optional tag in the plurality of tags is invalid; and
in response to determining that any optional tag in the plurality of tags is invalid, determining, by the computer, that the electronic check image is not suitable for image quality analysis.
10. The method according to claim 9, further comprising the steps of:
in response to determining that no optional tag in the plurality of tags is invalid, determining, by the computer, that the electronic check image is suitable for image quality analysis.
11. The method according to claim 8, wherein the step of determining not to perform an image quality analysis on the electronic check image further comprises the step of assigning, by the computer, a failure value to the electronic check image.
12. The method according to claim 11, further comprising the step of reporting, by the computer, the failure value to an entity that created the electronic check image.
13. The method according to claim 11, further comprising the step of storing, by the computer, the failure value in a database.
14. A system for determining whether an electronic check image is suitable for image quality analysis, comprising:
a communications network; and
a processor configured to
receive an electronic check image via the communications network, the electronic check image comprising a plurality of tags,
determine whether the plurality of tags comprise any optional tags,
in response to determining that the plurality of tags comprise any optional tags, determine whether any optional tag in the plurality of tags is invalid,
in response to determining that any optional tag in the plurality of tags is invalid, determine that the plurality of tags do not meet the tag standard, and
in response to determining that the plurality of tags do not meet the tag standard, determine that the electronic check image is not suitable for image quality analysis.
15. The system according to claim 14, wherein the processor is further configured to, in response to determining that no optional tag in the plurality of tags is invalid, determine that the plurality of tags meet the tag standard.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An ion implanting system comprising:
an x-axis rotating part for rotating a main surface of a wafer holder about an x-axis;
a y-axis rotating part for rotating the main surface of the wafer holder about a y-axis;
a first angle measuring device structured to be moved along with the main surface of the wafer holder, the first angle measuring device for measuring a tilt angle with respect to the x-axis of the main surface of the wafer holder, the first angle measuring device comprising:
a first faraday cup having a slot and a beam sensing region corresponding to the slot, the first faraday cup mounted on the x-axis rotating part at an angle that is offset by an amount equal to a target tilt angle, from a line perpendicular to the main surface of the wafer,
a first meter for measuring an amount of current provided to the beam sensing region, the current in the beam sensing region for controlling and neutralizing secondary electrons generated by collisions of an ion beam with the beam sensing region of first faraday cup;
a second angle measuring device structured to be moved along with the main surface of the wafer holder, the second angle measuring device for measuring a rotation angle with respect to the y-axis of the main surface of the wafer holder; and
a controller coupled to the first angle measuring device and the second angle measuring device, the controller structured to, when the measured tilt and measured rotation angles are different from the target tilt angle and a target rotation angle, control the x- and y-axis rotating parts until the measured tilt and measured rotation angles are equal to the target tilt and target rotation angles.
2. The system as claimed in claim 1 wherein the beam sensing region of the first faraday cup is perpendicular to the ion beam when the main surface of the wafer holder is tilted to the target tilt angle.
3. The system as claimed in claim 1, wherein the controller, when the ion beam is projected perpendicularly against an entire surface of the beam sensing region of the first faraday cup, is structured to control the x-axis rotating part based on the current measured by the first meter.
4. The system as claimed in claim 1, wherein the second angle measuring device comprises:
a second faraday cup having a slot and a beam sensing region corresponding to the slot; and
a second meter for measuring an amount of current provided to the beam sensing region of the second faraday cup, the current in the beam sensing region for controlling and neutralizing secondary electrons generated by collisions of an ion beam with the beam sensing region of the second faraday cup.
5. The system as claimed in claim 4, wherein the second faraday cup is fixedly mounted to either the y-axis rotating part or the x-axis rotating part.
6. The system as claimed in claim 4, wherein the beam sensing region of the second faraday cup is perpendicular to the ion beam when the main surface of the wafer is tilted to the target tilt angle.
7. The system as claimed in claim 4, wherein the beam sensing region of the second faraday cup is parallel to the main surface of the wafer holder on the x-axis.
8. The system as claimed in claim 4, wherein the controller, when the ion beam is projected perpendicularly against the entire surface of the beam sensing region of the second faraday cup, is structured to control the y-axis rotating part based on the current measured by the second meter.
9. The system as claimed in claim 1, wherein a wafer is affixed to the wafer holder.
10. The system as claimed in claim 9, wherein the wafer holder is fixed to the x-axis rotating part.
11. A wafer holding apparatus for an ion implanting system comprising:
a holding member to which a wafer can be affixed;
an x-axis rotating part for tilting the holding member on an x-axis with respect to an incidence direction of an ion beam;
a y-axis rotating part for rotating the holding member on a y-axis with respect to the incidence direction of the ion beam;
a measuring system for measuring the ion beam and mounted so as to be moved along with the holding member by the x- and y-axis rotating parts, the measuring system comprising:
a first faraday cup having a slot and a conductive plate against which the ion beam can be projected through the slot, the first faraday cup fixed to and mounted on the x-axis rotating part, wherein when a main surface of the wafer is tilted from the ion beam by an incidence angle \u03b1, the conductive plate in the first faraday cup is perpendicular to the ion beam,
a second faraday cup having a slot and a conductive plate against which the ion beam can be projected through the slot, the second faraday cup fixed to and mounted on the y-axis rotating part,
a first meter for measuring an amount of current provided to the conductive plate of the first faraday cup, the current in the conductive plate for controlling and neutralizing secondary electrons generated by collisions of an ion beam with the conductive plate of the first faraday cup, and
a second meter for measuring an amount of current provided to the conductive plate of the second faraday cup, the current in the conductive plate for controlling and neutralizing secondary electrons generated by collisions of the ion beam with the conductive plate of the second faraday cup; and
a controller for comparing data measured by the measuring system to pre-set data and, according to the result of the comparison, compensating a position of the holding member relative to the ion beam.
12. The apparatus as claimed in claim 11, wherein the controller, when the ion beam is projected perpendicularly against the conductive plate of the first faraday cup, is structured to control the x-axis rotating part such that a current value measured by the first meter reaches a first reference value.
13. The apparatus as claimed in claim 12, wherein the controller, when the ion beam is projected perpendicularly against the conductive plate of the second faraday cup, is structured to control the y-axis rotating part such that a current value measured by the second meter reaches a second reference value.
14. The apparatus as claimed in claim 11, wherein the controller, during an ion implantation into the wafer, compares accumulated current values, obtained by accumulating the current values measured by the first and second meters, to pre-set data.
15. The apparatus as claimed in claim 11, wherein the first and second faraday cups are respectively mounted on the x-axis and y-axis rotating parts so as to be parallel to the ion beam when the wafer holding apparatus is at a desired position relative to the ion beam.
16. The apparatus as claimed in claim 15, wherein, when the wafer holding apparatus is positioned to the desired position, the ion beam is projected perpendicularly against the conductive plates of the first and second faraday cups.
17. The apparatus as claimed in claim 11, wherein the second faraday cup is parallel on the y-axis to a main surface of the wafer fixed to the wafer holding apparatus.
18. The apparatus as claimed in claim 11, wherein the first faraday cup is mounted at a predetermined angle with respect to the x-axis.
19. The apparatus as claimed in claim 18, wherein the first faraday cup is tilted on the x-axis by an angle equal to an incidence angle \u03b1 of the ion beam against the main surface of the wafer.
20. The apparatus as claimed in claim 19, wherein the first faraday cup is tilted by between about 2 to 8 degrees.
21. An ion implantation system, comprising:
a wafer holder having a wafer holding surface structured to hold a wafer in an ion beam, the wafer holder tiltable on an x-axis and rotatable on a y-axis relative to the ion beam;
a measuring system mounted to the wafer holder and structured to measure a number of ions striking a beam sensor and to generate a measuring signal; and
a feedback controller coupled to the measuring system and structured to tilt and rotate the wafer holder based on the measuring signal.
22. An ion implantation system, comprising:
a wafer holder having a wafer holding surface structured to hold a wafer in an ion beam, the wafer holder tiltable on an x-axis and rotatable on a y-axis relative to the ion beam, wherein, when the wafer holder is in a target position, the wafer holding surface is tilted from a line perpendicular to the ion beam by an incidence angle \u03b1;
a faraday cup having an opening and structured to measure a number of ions striking a beam sensor that is mounted in the faraday cup perpendicular to the opening and to generate a measuring signal, wherein the faraday cup is mounted such that, when the wafer holding surface of the wafer holder is tilted, the faraday cup is also tilted; and
a feedback controller coupled to the beam sensor and structured to tilt and rotate the wafer holder based on the measuring signal.
23. The ion implantation system of claim 22, wherein, when the wafer holder is in the target position, the beam sensor is perpendicular to the ion beam.
24. The ion implantation system of claim 22, further comprising a second faraday cup.
25. The ion implantation system of claim 22, wherein, when the wafer holder is rotated, the second faraday cup is also rotated.
26. A method for performing an ion implantation into a wafer held by a wafer holder that is tiltable and rotatable, the method comprising;
generating ions and directing them toward the wafer holder;
measuring an amount of ions falling on a first beam sensor that is mounted to the wafer holder, wherein the first beam sensor is mounted such that, when the wafer holding surface of the wafer holder is tilted, the first beam sensor is also tilted, and when the wafer holder is in a target position, the wafer holding surface is tilted from a line perpendicular to the ion beam by an incidence angle \u03b1; and
moving the wafer holder based on the measured amount of ions.
27. The method of claim 26 wherein moving the wafer holder comprises tilting, rotating, or both tilting and rotating.
28. The method of claim 26, further comprising comparing the measured amount of ions to a pre-stored value.
29. The method of claim 28 wherein the pre-stored value indicates a maximum amount of ions falling on the first beam sensor.
30. The method of claim 26, wherein moving the wafer holder also comprises moving the first beam sensor.
31. The method of claim 30, further comprising, moving a second beam sensor.
32. The method of claim 31, wherein the first beam sensor is mounted to a first axis mover, and wherein the second beam sensor is mounted to a second axis mover.
33. The method of claim 32, wherein the wafer holder is coupled to the first axis mover and the second axis mover.
34. An ion implanting system comprising:
an x-axis rotating part for rotating a main surface of a wafer holder about an x-axis,
a y-axis rotating part for rotating the main surface of the wafer holder about a y-axis;
a first faraday cup having a slot and a beam sensing region corresponding to the slot, the first faraday cup fixed to and mounted on the x-axis rotating part at an angle that is offset by an amount equal to a target tilt angle, from a line perpendicular to the main surface of the wafer, the first faraday cup for measuring a tilt angle with respect to the x-axis of the main surface of the wafer holder;
a first meter for measuring an amount of current provided to the beam sensing region, the current in the beam sensing region for controlling and neutralizing secondary electrons generated by collisions of an ion beam with the beam sensing region of the first faraday cup;
a second angle measuring device structured to be moved along with the main surface of the wafer holder, the second angle measuring device for measuring a rotation angle with respect to the y-axis of the main surface of the wafer holder; and
a controller coupled to the first meter and the second angle measuring device, the controller structured to, when the measured tilt and measured rotation angles are different from target tilt and target rotation angles, controlling the x- and y-axis rotating parts until the measured tilt and measured rotation angles are equal to the target tilt and target rotation angles.
35. The ion implanting system of claim 34, wherein the beam sensing region of the first faraday cup is perpendicular to the ion beam when the main surface of the water holder is tilted to the target tilt angle.
36. A wafer holding apparatus for an ion implanting system comprising:
a holding member to which a wafer can be affixed;
an x-axis rotating part for tilting the holding member on an x-axis with respect to an incidence direction of an ion beam;
a y-axis rotating part for rotating the holding member on a y-axis with respect to the incidence direction of the ion beam;
a first faraday cup having a slot and a conductive plate against which the ion beam can be projected through the slot, the first faraday cup fixed to and mounted on the x-axis rotating part, the conductive plate in the first faraday cup is perpendicular to the ion beam when a main surface of the wafer is tilted from the ion beam by an incidence angle \u03b1;
a second faraday cup having a slot and a conductive plate against which the ion beam can be projected through the slot, the second faraday cup fixed to and mounted on the y-axis rotating part;
a first meter for measuring an amount of current provided to the conductive plate of the first faraday cup, the current provided to the conductive plate for controlling and neutralizing secondary electrons generated by collisions of an ion beam with the conductive plate of the first faraday cup;
a second meter for measuring an amount current provided to the conductive plate of the second faraday cup, the current provided to the conductive plate for controlling and neutralizing secondary electrons generated by collisions of the ion beam with the conductive plate of the second faraday cup; and
a controller for comparing data measured by the first meter and the second meter to pre-set data and, according to the result of the comparison, compensating a position of the holding member relative to the ion beam.
37. The apparatus as claimed in claim 36 wherein the incidence angle \u03b1 is between about 2 to 8 degrees.
38. An ion implantation system, comprising:
a wafer holder having a wafer holding surface structured to hold a wafer in an ion beam, the wafer holder tiltable on an x-axis and rotatable on a y-axis relative to the ion beam, the wafer holding surface tilted from a line perpendicular to the ion beam by an incidence angle \u03b1 when the wafer holder is in a target position;
a faraday cup having an opening and structured to measure a number of ions striking a beam sensor that is mounted in the faraday cup perpendicular to the opening and to generate a measuring signal, the faraday cup mounted such that, when the wafer holding surface of the wafer holder is tilted, the faraday cup is also tilted; and
a feedback controller coupled to the measuring system and structured to tilt and rotate the wafer holder based on the measuring signal.