Author: claimsbot

1. A compound of the formula (I)
in which
A represents a bond or \u2014C(R6AR6B)\u2014,
where
R6A represents hydrogen, (C1-C4)-alkyl or trifluoromethyl,
R6B represents hydrogen or (C1-C4)-alkyl,

R1 represents (C1-C6)-alkyl, (C2-C6)-alkenyl, (C2-C6)-alkynyl or (C3-C7)-cycloalkyl,
where (C1-C6)-alkyl, (C2-C6)-alkenyl and (C2-C6)-alkynyl may be substituted by 1 to 3 substituents independently of one another selected from the group consisting of deuterium, halogen, cyano, oxo, hydroxy, trifluoromethyl, (C3-C7)-cycloalkyl, (C1-C6)-alkoxy, trifluoromethoxy and phenyl,
in which (C3-C7)-cycloalkyl may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of (C1-C4)-alkyl, oxo, hydroxy, (C1-C4)-alkoxy and amino,
and
in which (C1-C6)-alkoxy may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of amino, hydroxy, (C1-C4)-alkoxy, hydroxycarbonyl and (C1-C4)-alkoxycarbonyl
and
in which phenyl may be substituted by 1 to 3 substituents independently of one another selected from the group consisting of halogen, cyano, nitro, (C1-C4)-alkyl, trifluoromethyl, hydroxy, hydroxymethyl, (C1-C4)-alkoxy, trifluoromethoxy, (C1-C4)-alkoxymethyl, hydroxycarbonyl, (C1-C4)-alkoxycarbonyl, aminocarbonyl, mono-(C1-C4)-alkylaminocarbonyl and di-(C1-C4)-alkylaminocarbonyl,

and
where (C3-C7)-cycloalkyl may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of fluorine, (C1-C4)-alkyl, (C1-C4)-alkoxy, hydroxy, amino and oxo,

R2 represents benzothienyl, phenyl, thienyl or furyl,
where benzothienyl, phenyl, thienyl and furyl may be substituted by 1 to 3 substituents independently of one another selected from the group consisting of halogen, cyano, nitro, (C1-C4)-alkyl, trifluoromethyl, hydroxy, (C1-C4)-alkoxy and trifluoromethoxy,

R3 represents a group of the formula
where
# represents the point of attachment to the nitrogen atom,
L represents (C1-C4)-alkanediyl,
where (C1-C4)-alkanediyl may be substituted by 1 to 3 substituents independently of one another selected from the group consisting of fluorine and (C1-C4)-alkyl,

R7A represents hydrogen or (C1-C4)-alkyl,

R7B represents hydrogen or (C1-C4)-alkyl,
or
R7A and R7B together with the carbon atom to which they are attached form a 3- to 6-membered carbocycle,
R8 represents hydroxycarbonyl, (C1-C4)-alkoxycarbonyl, aminocarbonyl, mono-(C1-C4)-alkylaminocarbonyl or di-(C1-C4)-alkylaminocarbonyl,
R9 represents hydroxy, trifluoromethoxy, (C1-C4)-alkoxy, hydroxycarbonyl, (C1-C4)-alkoxycarbonyl, aminocarbonyl, mono-(C1-C4)-alkylaminocarbonyl or di-(C1-C4)-alkylaminocarbonyl,

R4 represents phenyl, naphthyl or 5- to 10-membered heteroaryl,
where phenyl, naphthyl and 5- to 10-membered heteroaryl may be substituted by 1 to 3 substituents independently of one another selected from the group consisting of halogen, cyano, nitro, (C1-C4)-alkyl, difluoromethyl, trifluoromethyl, hydroxy, (C1-C4)-alkoxy, difluoromethoxy and trifluoromethoxy,

R5 represents hydrogen, deuterium, trifluoromethyl or (C1-C4)-alkyl,
and its salts, solvates and solvates of the salts.
2. The compound of claim 1, in which
A represents a bond or \u2014C(R6AR6B)\u2014,
where
R6A represents hydrogen,
R6B represents hydrogen,

R1 represents (C1-C6)-alkyl, (C2-C6)-alkenyl or (C3-C6)-cycloalkyl,
where (C1-C6)-alkyl and (C2-C6)-alkenyl may be substituted by 1 to 3 substituents independently of one another selected from the group consisting of fluorine, chlorine, cyano, oxo, hydroxy, trifluoromethyl, (C3-C6)-cycloalkyl, (C1-C4)-alkoxy, trifluoromethoxy and phenyl,
in which (C3-C6)-cycloalkyl may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of methyl, ethyl, oxo, hydroxy, methoxy, ethoxy and amino,
and
in which phenyl may be substituted by a substituent selected from the group consisting of fluorine, chlorine, cyano, methyl, ethyl, trifluoromethyl, methoxy, ethoxy, trifluoromethoxy, methoxymethyl, ethoxymethyl, hydroxycarbonyl, methoxycarbonyl, ethoxycarbonyl and aminocarbonyl,

and
where (C3-C6)-cycloalkyl may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of fluorine, methyl, ethyl, methoxy, ethoxy, hydroxy, amino and oxo,

R2 represents phenyl or thienyl,
where phenyl and thienyl may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of fluorine, chlorine, bromine, methyl, ethyl, trifluoromethyl, hydroxy, methoxy, ethoxy and trifluoromethoxy,

R3 represents a group of the formula
where
# represents the point of attachment to the nitrogen atom,
L represents methylene,
where methylene may be substituted by 1 or 2 methyl substituents,

R7A represents hydrogen or methyl,

R7B represents hydrogen or methyl,
or
R7A and R7B together with the carbon atom to which they are attached form a cyclopropyl ring,
R8 represents hydroxycarbonyl, methoxycarbonyl, ethoxycarbonyl, aminocarbonyl, methylaminocarbonyl, ethylaminocarbonyl, dimethylaminocarbonyl or diethylaminocarbonyl,
R9 represents hydroxy, trifluoromethoxy, methoxy, ethoxy, hydroxycarbonyl, methoxycarbonyl, ethoxycarbonyl, aminocarbonyl, methylaminocarbonyl, ethylaminocarbonyl, dimethylaminocarbonyl or diethylaminocarbonyl,

R4 represents phenyl,
where phenyl is substituted by 1 to 3 substituents independently of one another selected from the group consisting of fluorine, chlorine, cyano, methyl, ethyl, difluoromethyl, trifluoromethyl, methoxy, difluoromethoxy and trifluoromethoxy,

R5 represents hydrogen or methyl,
and its salts, solvates and solvates of the salts.
3. The compound of claim 1, in which
A represents a bond or \u2014C(R6AR6B)\u2014,
where
R6A represents hydrogen,
R6B represents hydrogen,

R1 represents (C2-C4)-alkyl, (C2-C4)-alkenyl or cyclopropyl, where (C2-C4)-alkyl and (C2-C4)-alkenyl may be substituted by 1 or 2 substituents independently of one another selected from the group consisting of fluorine, oxo, hydroxy and trifluoromethyl,
R2 represents phenyl,
where phenyl is substituted by a substituent selected from the group consisting of fluorine and chlorine,

R3 represents a group of the formula
where
# represents the point of attachment to the nitrogen atom,
L represents methylene,
R7A represents hydrogen or methyl,

R7B represents hydrogen or methyl,
or
R7A and R7B together with the carbon atom to which they are attached form a cyclopropyl ring,
R8 represents hydroxycarbonyl, methoxycarbonyl, ethoxycarbonyl or aminocarbonyl,
R9 represents hydroxy, methoxy, hydroxycarbonyl, methoxycarbonyl, ethoxycarbonyl or aminocarbonyl,

R4 represents a group of the formula
where
* represents the point of attachment to the group \u2014C(R5)(AC(\u2550O)NHR3)\u2014,
R10 represents hydrogen, chlorine, trifluoromethyl, trifluoromethoxy or methoxy,
R11 represents hydrogen, fluorine, chlorine, trifluoromethyl, trifluoromethoxy or methoxy,
where at least one of the radicals R10 and R11 is different from hydrogen,

R5 represents hydrogen or methyl,
and its salts, solvates and solvates of the salts.
4. A process for preparing compounds of the formula (I) as defined in claim 1, comprising:
A coupling a compound of the formula (II)
in which R1 and R2 each have the meanings given in claim 1,
in an inert solvent with activation of the carboxylic acid function with a compound of the formula (III)
in which A, R3, R4 and R5 each have the meanings given in claim 1,

or
B reacting a compound of the formula (IV)
in which R1 and R2 each have the meanings given in claim 1,
in an inert solvent in the presence of a base with a compound of the formula (V)
in which A, R3, R4 and R5 each have the meanings given in claim 1
and
X1 represents a leaving group,

or
C coupling a compound of the formula (VI)
in which A, R1, R2, R4 and R5 each have the meanings given in claim 1,
in an inert solvent with activation of the carboxylic acid function with a compound of the formula (VII)
H2N\u2014R3\u2003\u2003(VII),
in which R3 has the meaning given in claim 1,

and optionally converting the resulting compounds of formula (I) with the appropriate (i) solvents andor (ii) acids or bases into their solvates, salts andor solvates of the salts.
5. A pharmaceutical composition comprising a compound of claim 1 and an inert, non-toxic, pharmaceutically suitable auxiliary.
6. The pharmaceutical composition of claim 5, further comprising one or more active substances selected from the group consisting of diuretics, angiotensin AII antagonists, ACE inhibitors, beta-receptor blockers, mineralocorticoid receptor antagonists, organic nitrates, NO donors and positive-inotropic active substances.
7. A method for the treatment of acute and chronic heart failure, hypervolaemic and euvolaemic hyponatraemia, cirrhosis of the liver, ascites, oedema and the syndrome of inadequate ADH secretion (SIADH) comprising administering to a human or animal in need thereof an effective amount of at least one compound of claim 1.
8. A method for the treatment of acute and chronic heart failure, hypervolaemic and euvolaemic hyponatraemia, cirrhosis of the liver, ascites, oedema and the syndrome of inadequate ADH secretion (SIADH) comprising administering to a human or animal in need thereof an effective amount of at least one pharmaceutical composition of claim 5.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An image projection system comprising:
A spatial light modulator (SLM) comprises a plurality of pixel elements, wherein each of the pixel elements further comprises a deflectable mirror, and at least a first electrode and a second electrode for controlling said deflectable mirror to deflect to different tilt angles to reflect and modulate an illumination light for displaying an image; and
a controller for applying a voltage to the second electrode wherein said voltage applied in an initial operation period is different from said voltage applied in an image display period.
2. The image projection system according to claim 1, wherein:
said deflectable mirror is configured to deflect along an oscillation axis and the second electrode is disposed farther away from the oscillation axis than the first electrode.
3. The image projection system according to claim 1, wherein:
the second electrode is disposed farther away from the deflectable mirror than the first electrode when the deflectable mirror is operated at a horizontal angular position.
4. The image projection system according to claim 1, wherein:
the controller applying said voltage to the second electrode according to an equation:
|Vi|>|Va|, where \u201cVi\u201d is the voltage applied during the initial operation period of the deflectable mirror and \u201cVa\u201d is the voltage applied during the image display period.
5. The image projection system according to claim 1, wherein:
the controller further controls a period for applying said voltage to the second electrode according to an equation: |Ti|>|Ta|, where \u201cTi\u201d is the initial operation period of the deflectable mirror and \u201cTa\u201d is the image display period of the deflectable mirror.
6. The image projection system according to claim 1, wherein:
the controller further applies said voltage with a ramp waveform to the second electrode.
7. The image projection system according to claim 1, wherein:
the controller further applies said voltages to said first and second electrodes according to following equations:
|V1|<|V2|, if S1>S2, while
|V1|>|V2|, if S1<S2,
where \u201cS1\u201d is an area size of the first electrode, \u201cS2\u201d is an area size of the second electrode, \u201cV1\u201d is a voltage applied to the first electrode and \u201cV2\u201d is a voltage applied to the second electrode during the initial operation period.
8. The image projection system according to claim 1, wherein:
the controller applies said voltages to said first and second electrodes to generate Coulomb forces applied to the deflectable mirror according to an equation: C1<C2, where \u201cC1\u201d is the Coulomb force generated from the first electrode to the deflectable mirror when said first electrode is operated at a horizontal position and \u201cC2\u201d is the Coulomb force generated from the second electrode to the deflectable mirror when said deflectable mirror is operated at said horizontal position during the initial operation period.
9. The image projection system according to claim 1, further comprising:
a light source to emit an illuminating light to the spatial light modulator, wherein the light source is controlled to not emit said illumination light during the initial operation period.
10. The image projection system according to claim 1, wherein:
the first electrode is connected to a memory, and the second electrode is connected to a common line wherein said common line is connected to provide signals to a plurality of the pixel elements.
11. An image projection system comprising:
a spatial light modulator (SLM) comprises a plurality of pixel elements, wherein each pixel comprises a deflectable mirror,
each of said pixel elements further comprises at least a first electrode and a second electrode for controlling said deflectable mirror to deflect to different tilt angles to reflect and modulate an illumination light for displaying an image; and
a controller for applying a voltage to the second electrode wherein said controller applies a different voltage when said deflectable mirror is operated at a stationary state and when the mirror is operated at a transition state.
12. The image projection system according to claim 11, wherein:
said deflectable mirror is configured to deflect along an oscillation axis and the second electrode is disposed farther away from the oscillation axis than the first electrode.
13. The image projection system according to claim 11, wherein:
the second electrode is disposed farther away from the deflectable mirror than the first electrode when the deflectable mirror is operated at a horizontal angular position.
14. The image projection system according to claim 11, wherein:
the controller applying said voltage to the second electrode according to an equation:
|Vt|>|Vs|, where \u201cVs\u201d is the voltage applied when the mirror is in the stationary tilting state and \u201cVt\u201d is the voltage applied when the mirror is in the transition state.
15. The image projection system according to claim 11, wherein:
the controller further applies said voltage with a ramp waveform to the second electrode when the deflectable mirror is operated in the transition state.
16. The image projection system according to claim 11, wherein:
the controller applies said voltage to the second electrode when the deflectable mirror is operated in the transition state to control a length of time of operating said deflectable mirror in the transition state.
17. The image projection system according to claim 11, wherein:
the controller further applies said voltage to the second electrode when the deflectable mirror is operated in the stationary state to control the deflectable mirror wherein said voltage applied to the second electrode is independent from a voltage applied to the first electrode.
18. The image projection system according to claim 11, wherein:
the controller applies said voltages to said first and second electrodes according to the following equations:
|i V1|<|Vosc| if S1>S2, and
|V1|>|Vosc| if i S1<S2,
where \u201cS1\u201d is an area size of the first electrode, \u201cS2\u201d is an area size of the second electrode, \u201cV1\u201d is the voltage applied to the first electrode, and \u201cVosc\u201d is the voltage applied to the second electrode for operating said deflectable mirror in an intermediate oscillation state.
19. The image projection system according to claim 11, wherein:
the controller applies said voltages to said first and second electrodes according to the following equations:
|V1|\u2267|Vh| if S1>S2, and
|V1|<|Vh| if S1<S2,
where \u201cS1\u201d is an area size of the first electrode, \u201cS2\u201d is an area size of the second electrode, \u201cV1\u201d is the voltage applied to the first electrode, and \u201cVh\u201d is the voltage applied to the second electrode to control the deflectable mirror to operate in the stationary state independent from the voltage applied to the first electrode.
20. The image projection system according to claim 11, wherein:
the first electrode is connected to a memory, and the second electrode is connected to a common line wherein said common line is connected to provide signals to a plurality of the pixel elements.
21. An image projection system comprising:
a spatial light modulator (SLM) comprises a plurality of pixel elements, wherein each pixel comprises a deflectable mirror,
each of said pixel elements further comprises at least a first electrode and a second electrode for controlling said deflectable mirror to deflect to different tilt angles to reflect and modulate an illumination light for displaying an image; and a controller for applying a voltage to the first and second electrodes to generate a greater Coulomb force from the second electrode than the Coulomb force from the first electrode.
22. The image projection system according to claim 21, wherein:
said deflectable mirror is configured to deflect along an oscillation axis and the second electrode is disposed farther away from the oscillation axis than the first electrode.
23. The image projection system according to claim 21, wherein:
the second electrode is disposed farther away from the deflectable mirror than the first electrode when the deflectable mirror is operated at a horizontal angular position.
24. The image projection system according to claim 21, wherein:
the controller applies said voltage to the second electrode when the deflectable mirror is operated in the transition state to control a length of time of operating said deflectable mirror in the transition state.
25. The image projection system according to claim 21, wherein:
the controller further applies said voltage with a ramp waveform to the second electrode.
26. The image projection system according to claim 21, wherein:
the first electrode is connected to memory, and the second electrode is connected to a common line which is provided for a plurality of the pixels;
the first electrode is connected to a memory, and the second electrode is connected to a common line wherein said common line is connected to provide signals to a plurality of the pixel elements.

1. A method to create topography in material deposited above a wafer substrate, the method comprising:
etching a first deposited layer to form a dummy structure above the substrate, the dummy structure adapted to form excess dielectric volume on top of the dummy structure during dielectric deposition;
depositing first dielectric material having a top surface above the first deposited layer, wherein a first height of the top surface of first dielectric material directly above the dummy structure is higher above the substrate than a second height of the top surface of first dielectric material adjacent to the dummy structure;
performing a first CMP step on the first dielectric material, wherein, after the first CMP step, the first height remains higher than the second height; and,
after the first CMP step, depositing a second layer having a top surface above the first dielectric material, wherein a third height of the top surface of the second layer directly above the dummy structure is higher above the substrate than a fourth height of the top surface of the second layer adjacent to the dummy structure.
2. The method of claim 1 wherein the dummy structure is formed outside of an array area, and, during the etching step, a plurality of first features are etched from the first layer in the array area.
3. The method of claim 2 wherein the second layer is second dielectric material.
4. The method of claim 3 wherein second features are formed in the array area after the first CMP step and before the step of depositing a second layer, and wherein the second dielectric material is deposited on and between the second features.
5. The method of claim 4 further comprising performing a second CMP step on the second layer.
6. The method of claim 2 further comprising, after the first CMP step and before the step of depositing the second layer:
depositing a third layer on the first dielectric material; and
patterning and etching the third layer to form:
a) second features in the array area, and
b) an alignment or overlay structure directly above the dummy structure.
7. The method of claim 6 wherein the second layer is not dielectric material.
8. The method of claim 7 further comprising detecting a boundary between the third height and the fourth height, and using the boundary to locate the alignment or overlay structure.
9. A method to locate a buried overlay or alignment structure, the method comprising:
forming a dummy structure in a first deposited layer;
depositing first dielectric material above the dummy structure, the first dielectric material having a top surface;
performing a first CMP step on the first dielectric material, wherein, after the first CMP step, the top surface of the first dielectric material has a first height directly above the dummy structure and a second height adjacent to the dummy structure, the first height greater than the second height;
forming the overlay or alignment structure directly above the dummy structure and above the first dielectric material;
depositing a second layer having a top surface above the overlay or alignment structure, wherein the top surface of the second layer has a third height directly above the overlay or alignment structure and a fourth height adjacent to the overlay or alignment structure, the third height greater than the fourth height; and
locating the overlay or alignment mark by identifying a boundary between the third height and the fourth height.
10. The method of claim 9 wherein the dummy structure is formed outside of an array area, and wherein the array area comprises first patterned features.
11. The method of claim 10 wherein the first features are portions of a first device level.
12. The method of claim 11 wherein the first device level has at least a second device level monolithically formed above it in a monolithic three memory dimensional array.
13. A method to produce topography in material deposited above a wafer substrate, the method comprising:
depositing a first layerstack;
etching the first layerstack to form first features in an array area and a dummy structure outside of the array area;
depositing first dielectric material over the first features and the dummy structure;
planarizing the first dielectric material to expose the first features wherein, after the planarizing step, a first thickness of dielectric material remains directly on top of the dummy structure;
depositing a second layerstack above the first features and the dummy structure;
patterning and etching the second layerstack to form second features; and
depositing second dielectric material having a top surface above the second features and the dummy structure, wherein the top surface of second dielectric material has a first height directly above the dummy structure and a second height adjacent to the dummy structure, the first height higher above the substrate than the second height.
14. The method of claim 13 wherein the planarizing step comprises CMP.
15. The method of claim 13 wherein the first features are substantially parallel, substantially coplanar lines.
16. The method of claim 15 wherein the second features are pillars.
17. The method of claim 16 wherein the pillars comprise deposited semiconductor material.
18. The method of claim 17 wherein, in the completed device, each of the pillars comprises a vertically oriented diode.
19. The method of claim 13 wherein the first features and second features are portions of a first memory level.
20. The method of claim 19 wherein the first memory level has at least a second memory level monolithically formed above it in a monolithic three dimensional memory array.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A compound of the formula
wherein R and R\u2032 are each independently selected from (i) an alkyl group, including substituted and unsubstituted alkyl groups, and wherein heterto atoms either may or may not be present in the alkyl group, (ii) an alylene group, including substituted and unsubstituted alkylene groups, and wherein hetero atoms either may or may not be present in the alkylene group, (iii) an arylene group, including substituted and unsubstituted arylene groups, and wherein hetero atoms either may or may not be present in the arylene group (iv) an arylalkylene group, including substituted and unsubstituted arylalkylene groups, and wherein hetero atoms either may or may not be present in the arylalkylene group, (v) an alkylarylene group, including substituted and unsubstituted alkylarylene groups, and wherein hetero atoms either may or may not be present in the alkylarylene group, (vi) an alkyleneoxy group, including substituted and unsubstituted alkyleneoxy groups, and wherein hetero atoms either may or may not be present in the alkyleneoxy group, (vii) an aryleneoxy group, including substituted and unsubstituted aryleneoxy groups, and wherein hetero atoms either may or may not be present in the aryleneoxy group, (viii) an arylalkyleneoxy group, including substituted and unsubstituted arylalkyleneoxy groups, and wherein hetero atoms either may or may not be present in the arylalkyleneoxy group, (ix) an alkylaryleneoxy group, including substituted and unsubstituted alkylaryleneoxy groups, and wherein hetero atoms either may or may not be present in the alkylaryleneoxy group, (x) a polyalkyleneoxy group, (xi) a polyaryleneoxy group, (xii) a polyarylalkyleneoxy group, (xiii) a polyalkylaryleneoxy group, (xiv) a heterocyclic group, (xv) a silylene group, (xvi) a siloxane group, (xvii) a polysilylene group, (xviii) a polysiloxane group, or (xix) hydrogen, provided both R and R\u2032 cannot be hydrogen.
wherein X is a (i) direct bond, (ii) an oxygen atom, (iii) a nitrogen atom, (iv) a sulfur atoms, (v) a group of the formula -NR40- wherein R40 is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetro atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetro atoms either may or may not be present in the arylalkyl group, or an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the arkylaryl group, (vi) or a group of the formula -CR50R60-; wherein R50 and R60 each, independently of the other, is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl groups, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, or an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group;
wherein (Y)n and (Z)n are each independently optionally present and wherein (Y)m and (Z)n are each independently selected from i) a hydrogen atom, (ii) a halogen atom, (iii) a nitro group, (iv) an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, (v) an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, (vi) an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, (vii) an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group, (viii) a group of the formula
wherein R70 is an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, and alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group, an alkoxy group, including substituted and unsubstituted alkoxy groups, and wherein hetero atoms either may or may not be present in the alkoxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an arylalkyloxy group, including substituted and unsubstituted arylalkyloxy groups, and wherein hetero atoms either may or may not be present in the arylalkyloxy group, an alkylaryloxy group, including substituted and unsubstituted alkylaryloxy groups, and wherein hetero atoms either may or may not be present in the arlkylaryloxy group, a polyalkyleneoxy group, a polyaryleneoxy group, a polyarylalkyleneoxy group, a polyalkylaryleneoxy group, a heterocyclic group, a silyl group, a siloxane group, a polysilylene group, or a polysiloxane group, (ix) a sulfonyl group of the formula -SO2R80 wherein R80 is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, an alkyaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkoxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an arylalkyloxy group, including substituted and unsubstituted arylalkyloxy groups, and wherein hetero atoms either may or may not be present in the arylalkyloxy group, an alkylaryloxy group, including substituted and unsubstituted alkylaryloxy groups, and wherein hetero atoms either may or may not be present in the alkylaryloxy group, a polyalkyleneoxy group, a polyaryleneoxy group, a polyarylalkyleneoxy group, a polyalkylaryleneoxy group, a heterocyclic group, a silyl group, a siloxane group, a polysilylene group, or a polysiloxane group, or (x) a phosphoryl group of the formula -PO3R90 wherein R90 is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group, an alkoxy group, including substituted and unsubstituted alkoxy groups, and wherein hetero atoms either may or may not be present in the alkoxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an arylalkyloxy group, including substituted and unsubstituted arylalkyloxy groups, and wherein hetero atoms either may or may not be present in the arylalkyloxy group, an alkylaryloxy group, including substituted and unsubstituted alkylaryloxy groups, and wherein hetero atoms either may or may not be present in the alkylaryloxy group, a polyalkyleneoxy group, a polyaryleneoxy group, a polyarylalkyleneoxy group, a polyalkylaryleneoxy group, a heterocyclic group, a silyl group, a siloxane group, a polysilylene group, or a polysiloxane group; and
where in (Y)m, m is an integer from about 0 to about 4, and in (Z)n, n is an integer from about 0 to about 4.
2. A compound according to claim 1, wherein R is a linear alkylene group, R\u2032 is a linear alkylene group, or both R and R\u2032 are linear alkylene groups.
3. A compound according to claim 1, wherein R is a branched alkylene group, R\u2032 is a branched alkylene group, or both R and R\u2032 are branched alkylene groups.
4. A compound according to claim 1, wherein R is a saturated alkylene group, R\u2032 is a saturated alkylene group, or both R and R\u2032 are saturated alkylene groups.
5. A compound according to claim 1, wherein R is an unsaturated alkylene group, R\u2032 is an unsaturated alkylene group, or both R and R\u2032 are unsaturated alkylene groups.
6. A compound according to claim 1, wherein R is an unsubstituted alkylene group, R\u2032 is an unsubstituted alkylene group, or both R and R\u2032 are unsubstituted alkylene groups.
7. A compound according to claim 1, wherein R is a substituted alkylene group, R\u2032 is a substituted alkylene group, or both R and R\u2032 are substituted alkylene groups.
8. A compound according to claim 1, wherein R is an alkylene group wherein hetero atoms selected from oxygen, nitrogen, sulfur, silicon, phosphorus, boron, or mixtures thereof, are present in the alkylene group, R\u2032 is an alkylene group wherein hetero atoms selected from oxygen, nitrogen, sulfur, silicon, phosphorus, boron, or mixtures thereof, are present in the alkylene group, or both R and R\u2032 is an alkylene group wherein hetero atoms selected from oxygen, nitrogen, sulfur, silicon, phosphorus, boron, or mixtures thereof are present in the alkylene group.
9. A compound according to claim 1, R is a alkylene group wherein no hetero atoms are present in the alkylene group, R\u2032 is an alkylene group wherein no hetero atoms are present in the alkylene group, or both R and R\u2032 is an alkylene group wherein no hetero atoms are present in the alkylene group.
10. A compound according to claim 1, wherein R is an alkylene group with at least about 10 carbon atoms, R\u2032 is an alkylene group with at least about 10 carbon atoms, or both R and R\u2032 is an alkylene group with at least about 10 carbon atoms.
11. A compound according to claim 1, wherein R is an alkylene group with about 36 carbon atoms, R\u2032 is an alkylene group with about 36 carbon atoms, or both R and R\u2032 is an alkylene group with about 36 carbon atoms.
12. A compound according to claim 1, wherein R is
13. A compound according to claim 1, wherein R is
14. A compound according to claim 1, wherein R is
15. A compound according to claim 1, wherein R is a branched alkylene group having 36 carbon atoms which may include unsaturations and cyclic groups, R\u2032 is a branched alkylene group having 36 carbon atoms which may include unsaturations and cyclic groups, or both R and R\u2032 is a branched alkylene group having 36 carbon atoms which may include unsaturations and cyclic groups.
16. A compound according to claim 1, wherein X is oxygen.
17. A compound according to claim 1, of the formula
18. A compound according to claim 1, of the formula
19. A compound according to claim 1, of the formula
20. A compound according to claim 1, of the formula